CN105609490B - A kind of encapsulating structure and its manufacturing method of compound sensor module - Google Patents
A kind of encapsulating structure and its manufacturing method of compound sensor module Download PDFInfo
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- CN105609490B CN105609490B CN201610116325.5A CN201610116325A CN105609490B CN 105609490 B CN105609490 B CN 105609490B CN 201610116325 A CN201610116325 A CN 201610116325A CN 105609490 B CN105609490 B CN 105609490B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The present invention discloses a kind of encapsulating structure of compound sensor module, including substrate, there is the sensor chip installation region surrounded by several discrete devices on the substrate, and other chip mounting areas outside the sensor chip installation region, in being equipped with sensor chip in the sensor chip installation region, the sensor chip for complex function sensor chip and/or, independent function sensor chip.The invention also discloses the manufacturing methods of above-mentioned compound sensor module, the encapsulation of compound sensor module is made to replace lead frame using substrate, sensor chip installation space is formed using discrete device, the compound sensor module of the structure is small, uniformity is good, at low cost, is produced suitable for small batch.
Description
Technical field
The present invention relates to the encapsulating structures and its manufacture of sensor technical field more particularly to a kind of compound sensor module
Method.
Background technology
Compound sensor module be complex function sensor chip and/or, independent function sensor chip package is one
In a module, to realize the measurement to different physical quantities, the function of module is realized.Tire pressure monitoring (TPMS) sensor assembly is one
The typical compound sensor module of kind, the present invention is illustrated by taking the encapsulation of TPMS sensor assemblies as an example, but is not limited to TPMS
Sensor assembly.
Modern TPMS systems require volume, function, power consumption of device etc. higher and higher, and device needs to change from every side
It is integrated into reach more efficient.One of them main requirement is encapsulation miniaturization, reduces the volume of package module, in order to
TPMS systems are mounted on tire.
At present, industry (generally comprises TPMS sensor chips (including pressure sensor and acceleration to TPMS sensor assemblies
Degree sensor), IC controls chip, wireless communications chips and resistance capacitance be when discrete devices) when being packaged, it is general using in advance into
Type (Premolding) technique, the discrete devices bindings such as sensor chip, IC controls chip, wireless communications chips and resistance capacitance
On lead frame.Since the making of Premolding techniques and lead frame needs dedicated mold, thus it is of high cost, it opens
It is long to send out the cycle；Small batch production or the small lot test manufacture of development phase are not suitable for, in addition when TPMS system updates are regenerated
When, the volume or appearance structure of the discrete devices such as sensor chip, IC controls chip, wireless communications chips and resistance capacitance have
, it is necessary to remake corresponding mould during variation, increase cost, cause to waste.In addition, lead frame is generally by metal stamping
Shaping, volume are larger；It is relatively difficult to the attachment processing of discrete device, it is difficult to realize High Density Integration, thus cause encapsulation
Module volume is big.
The content of the invention
It is an object of the present invention to：A kind of encapsulating structure of compound sensor module, compound sensor module are provided
Integrated level is high, further reduces encapsulation volume, need not make dedicated mold, reduces production cost, shortens the construction cycle, should
The compound sensor module performance of encapsulating structure is stable, reliability is high, small, uniformity is good, it is at low cost, be suitable in small batches
Amount production.
It is another object of the present invention to：A kind of manufacturing method of compound sensor module, the compound die of production are provided
Block sensor assembly performance is stable, reliability is high, small, uniformity is good, it is at low cost, suitable for small batch production.
For this purpose, the present invention uses following technical scheme：
On the one hand, a kind of encapsulating structure of compound sensor module is provided, including substrate, is had on the substrate by several
The sensor chip installation region and other chips outside the sensor chip installation region that discrete device surrounds
Installation region, in being equipped with sensor chip in the sensor chip installation region, the sensor chip is complex function
Sensor chip and/or, independent function sensor chip.
Other chips refer to the chip being mounted in compound sensor package module outside box dam, such as it can be：IC
It controls (full text all sames) such as chip, wireless communications chips.It is pointed out that if there is sensor chip has been placed on outside box dam
Portion in this patent, is also categorized in other chips.
A kind of optimal technical scheme of encapsulating structure as compound sensor module is provided with outside the discrete device
Cram material, the discrete device and the box dam structure crammed material and the sensor chip installation region is collectively formed.
A kind of optimal technical scheme of encapsulating structure as compound sensor module, other described chip installation areas are set
There are the first protection materials, first protection materials set height, the sensor identical with the height of the box dam structure
Chip mounting area is provided with to protect the second protection materials of sensor chip and its metal binding line.
A kind of optimal technical scheme of encapsulating structure as compound sensor module, second protection materials are only set
The sensor chip and its metal binding line are arranged in the inside of the box dam structure or, second protection materials
All outer surfaces.
A kind of optimal technical scheme of encapsulating structure as compound sensor module is set in the compound sensor module
It is equipped with to protect second protection materials and the protection cap of the sensor chip, be provided in the protection cap ventilative
Hole.
On the other hand, a kind of manufacturing method of compound sensor module, for making compound sensor mould as described above
Block, including：
Other chips and discrete device installation：Other chips and discrete device are mounted on substrate, and make several points
Vertical device forms the annular peripheral for the sensor chip installing zone that can be used for installation sensor chip；
Make box dam structure：Between the adjacent discrete device and each discrete device both sides set and cram material,
Make the discrete device and cram the annular box dam structure that material forms closing；
Sensor chip is installed：Sensor chip is mounted on inside the loop configuration of box dam structure formation, routing
So as to electrical connection is formed between sensor chip, other chips and substrate；
Once encapsulate：Set to protect the electric elements of box dam structural outer in the box dam structural outer first protects
Protective material, and make setting for first protection materials highly identical with the setting height of the box dam structure；
Secondary encapsulation：The box dam inside configuration set for protect box dam inside configuration sensor chip and its
Second protection materials of metal binding line, and make second protection materials that the metal binding line be completely covered；
Protection cap is installed：It sets to protect second protection materials and the biography in first protection materials
The protection cap of sensor chip.
Preferably, the step once encapsulate and step secondary encapsulation between increase step it is pre-filled：It is enclosed described
The inside stuffing block of dam structure reduces the volume of box dam inside configuration cavity；
A kind of optimal technical scheme of manufacturing method as compound sensor module, other described chips and discrete device
It is installed as that other chips and discrete device are mounted on substrate using surface mount process.
A kind of optimal technical scheme of manufacturing method as compound sensor module, the sensor chip are installed as leading to
Adhesive glue is crossed by sensor chip and substrate bonding.
A kind of optimal technical scheme of manufacturing method as compound sensor module, the secondary encapsulation are using drop silicon
The mode of glue forms protective layer in the inside of the box dam structure or, in the entire sensor chip and its metal binding line
External make protective layer.
A kind of optimal technical scheme of manufacturing method as compound sensor module, the installation method of the protection cap
For：Opened up in the first protection materials with the corresponding groove of protection cap shape, then fill the first protection materials in the trench,
Metal cover is pressed into groove when the first protection materials are uncured, treats that the first protection materials are formed by curing protection cap and the first protection
The connection of material.
Beneficial effects of the present invention are：The encapsulation of the compound sensor module of the present invention replaces lead frame using substrate,
Sensor chip installation space is formed using discrete device, avoids, using premolding techniques, dedicated mould need not being made
Tool reduces production cost, shortens the construction cycle, since substrate can realize multilayer wiring, can improve integrated level, further reduces
Encapsulation volume, the compound sensor module performance stabilization of the structure, reliability is high, small, uniformity is good, at low cost, is applicable in
It is produced in small batch.
Description of the drawings
The present invention is described in further detail below according to drawings and examples.
Figure 1A is the schematic top plan view that compound sensor module substrate described in the embodiment of the present invention completes structure after attachment.
Figure 1B is A-A sectional views in Figure 1A.
Fig. 2A is structure schematic top plan view after box dam material solidification described in the embodiment of the present invention.
Fig. 2 B are B-B sectional views in Fig. 2A.
Fig. 3 A are the structure schematic top plan view after attachment TPMS sensor chips and routing of the present invention.
Fig. 3 B are C-C sectional views in Fig. 3 A.
Fig. 4 A are structure schematic top plan view after the first protection materials described in the embodiment of the present invention cure.
Fig. 4 B are D-D sectional views in Fig. 4 A.
Fig. 5 for described in the embodiment of the present invention after box dam inside configuration arranging thing block structure schematic top plan view.
Fig. 6 is feature cross-section schematic diagram after silica gel described in the embodiment of the present invention cures.
Fig. 7 A are metal cover structure schematic top plan view described in the embodiment of the present invention.
Fig. 7 B are E-E sectional views in Fig. 6.
Fig. 8 is the compound sensor modular structure cross-sectional view described in the embodiment of the present invention.
Fig. 9 is feature cross-section of the compound sensor module described in further embodiment of this invention using coating protected mode
Schematic diagram.
In figure：
1st, substrate；2nd, IC controls chip；3rd, wireless communications chips；4th, TPMS sensor chips；5th, discrete device；6th, cram
Material；7th, box dam structure；8th, the first protection materials；9th, the second protection materials；10th, metal cover；11st, protective coating；12nd, object block；
13rd, metal binding line；14th, adhesive glue.
Specific embodiment
Technical solution to further illustrate the present invention below with reference to the accompanying drawings and specific embodiments.
Embodiment one：
In this present embodiment, the encapsulating structure of a kind of compound sensor module of the present invention, it is described including substrate 1
On substrate 1 there is the sensor chip installation region surrounded by several discrete devices 5 and installed positioned at the sensor chip
Other chip mounting areas of region exterior, in being equipped with complex function sensor core in the sensor chip installation region
Piece is provided with outside the discrete device 5 and crams material 6, the discrete device 5 with it is described cram material 6 be collectively formed it is described
The box dam structure 7 of sensor chip installation region.Other described chip installation areas are provided with the first protection materials 8, and described first
Setting for protection materials 8 is highly identical with the height of the box dam structure 7, and the sensor chip installation region, which is provided with, to be used for
The second protection materials 9 of complex function sensor chip and metal binding line 13 are protected, second protection materials 9 are only set
Be provided with to protect on the inside of the box dam structure 7, the compound sensor module second protection materials 9 and
The protection cap of the complex function sensor chip is provided with air hole in the protection cap.It is described compound in this present embodiment
Function sensor chip is TPMS sensor chips 4.
The invention also discloses a kind of manufacturing method of compound sensor module, for making composite sensing as described above
Device module, including：
Other chips and discrete device 5 are installed：Other chips and discrete device 5 are installed on substrate 1, and are made several
Discrete device 5 forms the annular peripheral for the sensor chip installing zone that can be used for installation sensor chip；Other described chips and
Discrete device 5 is installed as installing other chips and discrete device 5 on substrate 1 using surface mount process.
Other chips described in the present embodiment include：IC controls 2 and second chip of chip, it should be pointed out that the
The chip of difference in functionality can be selected in the species of two chips according to actual needs, and the second chip uses wireless telecommunications core in the present embodiment
Piece 3.
Make box dam structure 7：Between the adjacent discrete device 5 and 5 both sides of each discrete device set and cram material
Material 6 makes the discrete device 5 and crams the annular box dam structure 7 that material 6 forms closing；
Sensor chip is installed：By sensor chip inside the loop configuration that the box dam structure 7 is formed, routing
So as to electrical connection is formed between sensor chip, other chips and substrate 1；Sensor chip is installed as to pass by adhesive glue
Sensor chip is bonded with substrate 1 and realized, can also use other connection modes in other embodiments.
Once encapsulate：It sets to protect first of the electric elements outside box dam structure 7 outside the box dam structure 7
Protection materials 8, and make setting for first protection materials 8 highly identical with the setting height of the box dam structure 7；
Secondary encapsulation：Set inside the box dam structure 7 for the complex function inside box dam structure 7 to be protected to sense
Second protection materials 9 of device chip and its metal binding line 13, and make second protection materials 9 that the metal binding be completely covered
Alignment 13；Secondary encapsulation is to form protective layer in the inside of the box dam structure 7 by the way of silica gel is dripped, or in institute
It states entire complex function sensor chip and its external of metal binding line makes protective layer.
As a kind of perferred technical scheme, can also be carried out before step secondary encapsulation pre-filled：In the box dam knot
The inside stuffing block of structure 7 reduces the volume of 7 internal cavities of box dam structure；
Protection cap is installed：It sets to protect second protection materials 9 and described in first protection materials 8
The protection cap of complex function sensor chip.The installation method of the protection cap is：Protection is opened in the first protection materials 8
Then the corresponding groove of cap-shaped shape fills the first protection materials 8 in the trench, when the first protection materials 8 are uncured by gold
Belong to lid 10 and be pressed into groove, treat that the first protection materials 8 are formed by curing the connection of protection cap and the first protection materials 8.
Specifically, citing makes the manufacturing method and this method of TPMS compound sensor package modules in the present embodiment
The TPMS sensor package modules of manufacture：TPMS sensor package modules include IC controls chip 2, wireless communications chips 3, TPMS
IC is controlled the deviding devices such as chip 2, wireless communications chips 3, resistance capacitance by sensor chip 4 and several discrete devices 5 first
Part 5 is mounted on the substrate 1 manufactured and designed, and the method for attachment uses surface mount process (SMT).The deviding devices such as resistance capacitance
Part 5 is arranged by certain forms, surrounds a loop configuration.The loop size and height surrounded can be according to TPMS sensor chips
The height of the protection silica gel of operating space needed for 4 sizes, follow-up routing technique and subsequent technique determines, between discrete device 5
Gap can be determined according to the viscosity of follow-up box dam material, the height of discrete device 5 and box dam height, be generally 0.5mm-
Between 0.8mm.1 material of substrate should have that glass transition temperature is high, coefficient of thermal expansion should with silicon materials it is basically identical the characteristics of, this
Sample can reduce since thermal stress caused by substrate 1 and 4 coefficient of thermal expansion of TPMS sensor chips mismatch is to TPMS sensors
The adverse effect that the performance of chip 4 generates.1 bottom-layer design of substrate has heat dissipation bonding pad, convenient for heat dissipation.The substrate 1 of present example
Material selection FR4 substrates 1,4 size of TPMS sensor chips is 0.9 ㎜ (length) × 0.9 ㎜ (width) × 0.6mm in this present embodiment
(height), the loop configuration size that discrete device 5 surrounds are 2.5 ㎜ (length) × 1.5 ㎜ (width), and discrete device 5 is 0402 resistance electricity
Hold, the gap between discrete device 5 is 0.6mm.Structure is as shown in Figure 1A, Figure 1B after completing attachment.
Wireless telecommunications are passed to the installation position of chip 3 with IC chip 2 to be controlled to be disposed in parallel in substrate 1 in the present embodiment
On, but the arrangement is not limited thereto, can also use other structures in other embodiments, for example, passing through BGA side
Wireless telecommunications sensor chip and IC control chips 2 are stacked attachment on substrate 1 by formula.
Then box dam structure 7 is formed, gap between resistance capacitance discrete device 5 is crammed with material 6 is crammed, and covers completely
The discrete devices such as lid resistance capacitance 5 form box dam structure 7.Material 6 is crammed using elasticity modulus is small, stability is good, dynamic viscosity
Larger resin material, to avoid 7 external form of box dam structure caused by it is flowed uncontrollable as far as possible；Box dam structure can be reduced simultaneously
7 contacted with follow-up protection materials after due to thermal expansion mismatch generate thermal stress to the unfavorable of 4 performance of TPMS sensor chips
It influences.The box dam height formed after box dam material solidification is 1.4mm, and structure diagram is as shown in Fig. 2A, Fig. 2 B.
TPMS sensor chips 4 are mounted on the substrate 1 for the sensor chip installation region that box dam structure 7 is formed, beaten
Line is to realize corresponding electrical connection.During attachment, 4 chip of TPMS sensors is connected with substrate 1 by adhesive glue 14, and adhesive glue 14 can
With the silica gel for selecting elasticity modulus small, to reduce encapsulation residual stress and the thermal stress caused by thermal expansion mismatch to TPMS
4 performance of sensor chip has an impact.Etc. adhesive glues 14 cure after routing, realize corresponding electrical connection.Mount TPMS sensors
Structure diagram after chip 4 and routing is as shown in Fig. 3 A, Fig. 3 B.
With entire substrate of the first protection materials 8 covering in addition to the sensor chip installation space that box dam structure 7 is formed
1, protection IC control chip 2 and wireless communications chips 3 and its corresponding metal binding line 13, and the first protection materials 8 may be employed
The larger resin material of viscosity makes it avoid flowing as far as possible, and the first protection materials 8 coating height and box dam are highly consistent.This reality
The epoxy resin compound that the selection of the protection materials in example meets European Union's specification Halogen ingredient is applied, fully meets RoHS requirements.This
Kind material air-tightness is good, CTE is low (≤13ppm/ DEG C), meet high-temperature operation, also reach moisture-proof (SB-U-03-002：
0.17%) demand.Its dynamic viscosity is 32000cps, and viscosity is larger, prevents its flowing from causing external form uncontrollable, after resin solidification
Structure diagram is as shown in Fig. 4 A, Fig. 4 B.
In the inside stuffing block 12 of the box dam structure 7, the volume of 7 internal cavities of reduction box dam structure；Although box dam
It is larger to cram 6 viscosity of material, but since 1 height of box dam structure is higher, box dam crams material 6 and has certain trickling, institute certainly
Can be designed with the cavity volume of reserved attachment TPMS sensor chips 4 it is bigger, to prevent box dam from cramming the trickling shadow of material 6
Ring attachment and the routing of follow-up TPMS sensor chips 4.In order to reduce the dosage of subsequent technique silica gel, so as to reduce due to silica gel
To the adverse effect of metal binding line reliability caused by expanding with heat and contract with cold, also for cost-effective, so placing one in the cavities
A object block 12, to reduce follow-up silica gel dosage.It is smaller to place the material elasticity modulus of trying one's best of object block 12, to subtract small bulk body 12 and silicon
It is glued 12 body of adverse effect objects block touched due to the thermal stress that thermal expansion mismatches and generates to 4 performance of TPMS sensor chips
Product is determined according to actual routing figure, is the bigger the better in the case that not influencing electrical connection.Object block of material uses in the embodiment of the present invention
Resin material.It is as shown in Figure 5 to place object block post package structure diagram.Simply a kind of object block of signal places form in figure,
The object block of various form and quantity can be placed, to reduce cavity volume.
TMPS sensor chips 4 and its metal binding line 13 are protected by the use of silica gel as the second protection materials 9.Silica gel
Material is using the high silica gel of tensile strength, it is ensured that be will not cracking under high pressure and mechanical shock effect.Silicon when dripping silica gel
Glue dosage will control more accurate, be preferred so that metal binding line is just completely covered.When metal binding line is not completely covered for silica gel,
Due to silica gel thermal expansion, metal binding line may be caused to be covered and be not pulled off by the interface that silica gel covers by silica gel；Silicon
Glue dosage is excessive, can have a negative impact to 4 performance of TPMS sensor chips.Structural section schematic diagram such as Fig. 6 after silica gel cures
It is shown.
TPMS sensor chips 4 and protection silica gel finally are protected with metal cover 10 with holes, reduces external environment medium pair
TPMS sensor chips 4 and the mechanical damage for protecting silica gel, while ensure the measurement to environmental pressure.Embodiment of the present invention
As shown in Figure 7 A, 7 B, metal cover 10 can be made 10 structure of metal cover by being machined.Metal cover 10 is capped in epoxy
Method on resin is：By opening a groove on epoxy resin, epoxy resin is then filled in the trench, in epoxy resin
Metal cover 10 is pressed into groove when uncured, opens the groove of 0.2 ㎜ on epoxy resin, after epoxy resin cure, feature cross-section
Schematic diagram is as shown in Figure 8.
The present embodiment simply shows schematically a kind of structure of metal cover and its is capped one kind on epoxy resin
Method, however, the present invention is not limited thereto kind structures and methods.The perforated metal lid and its capping method of other structures form are good, than
Perforated metal tablet such as punching press is bonded in by adhesive glue on epoxy resin.
Embodiment two：
As shown in figure 9, the present embodiment and the technical solution described in embodiment one are essentially identical, the main distinction is：It will
The drop glue set-up mode of the silica gel as the second protection materials 9 in above-mentioned manufacturing method is changed to prepare one layer of protective coating 11
TPMS sensor chips 4 and metal binding line 13 are protected, using protective coating 11, silica gel need not be dripped, so as to reduce
The height of box dam structure 7 further reduces the volume and weight of encapsulating structure.
Specifically, protective coating 11, the protective coating 11 are prepared after the epoxy resin cure as the first protection materials 8
Material use have it is waterproof and dampproof, corrosion-resistant, stability is good, heat safe material, to protect TPMS sensor chips 4 and metal
Binding line 13, and ensure high temperature when the packaged TPMS sensor package modules of subsequent applications can be subjected to SMT.It protects simultaneously
Coating 11 should have good wear resistance and with the good bond strength of base material, to ensure its long-term reliability.By
When prepared by protective coating 11 total surface all can growth protecting coating 11, it is erosion-resisting to add entire encapsulating structure
Ability.Protective coating 11 is very thin, does not interfere with attachment of the follow-up module in package system on pcb board and is electrically connected accordingly
It connects.11 thickness of protective coating of preparation should get over Bao Yuehao under the premise of Mechanical Reliability is met, generally 1.3-100nm.This
Embodiment prepares protective coating 11 using silicon fluoride base organic material, and the preparation method of protective coating 11 is enhanced using plasma
Chemical vapour deposition technique, 11 thickness of protective coating of preparation is 50nm.After protective coating 11, since silicon need not be used
Glue is protected, and box dam height can reduce, and embodiment box dam height of the invention is 1.0mm.
In description herein, it is to be understood that term " first ", " second " are used only for being subject to area in description
Point, it has no special meaning.
It is to be understood that above-mentioned specific embodiment is only that presently preferred embodiments of the present invention and institute's application technology are former
Reason, in technical scope disclosed in this invention, variation that any one skilled in the art is readily apparent that or
It replaces, should all cover within the scope of the present invention.
Claims (8)
1. a kind of encapsulating structure of compound sensor module, which is characterized in that including substrate, have on the substrate by several points
The sensor chip installation region that vertical device surrounds and other chips peace outside the sensor chip installation region
Region is filled, in being equipped with sensor chip in the sensor chip installation region, the sensor chip passes for complex function
Sensor chip and/or, independent function sensor chip；It is provided with outside the discrete device and crams material, the discrete device
With the box dam structure crammed material and the sensor chip installation region is collectively formed；The sensor chip installation region
It is provided with to protect the second protection materials of complex function sensor chip and metal binding line, second protection materials
The inside or, second protection materials for being provided only on the box dam structure are arranged on the sensor chip and its metal binding
The all outer surfaces of line.
2. the encapsulating structure of compound sensor module according to claim 1, which is characterized in that other chips installation
Area is provided with the first protection materials, and first protection materials set height identical with the height of the box dam structure.
3. the encapsulating structure of compound sensor module according to claim 2, which is characterized in that the compound sensor mould
It is provided with to protect second protection materials and the protection cap of the sensor chip on block, be set in the protection cap
There is air hole.
4. a kind of manufacturing method of compound sensor module, for making the composite sensing any one of claims 1 to 3
Device module, which is characterized in that including：
Other chips and discrete device installation：Other chips and discrete device are mounted on substrate, and make several deviding devices
Part forms the annular peripheral for the sensor chip installing zone that can be used for installation sensor chip；
Make box dam structure：Between the adjacent discrete device and each discrete device both sides set and cram material, make institute
It states discrete device and crams the annular box dam structure that material forms closing；
Sensor chip is installed：By sensor chip be mounted on the box dam structure formed loop configuration inside, routing so that
Electrical connection is formed between sensor chip, other chips and substrate；
Once encapsulate：The box dam structural outer set for protect box dam structural outer electric elements the first protected material
Material, and make setting for first protection materials highly identical with the setting height of the box dam structure；
Secondary encapsulation：In the sensor chip and its metal that are used to protect box dam inside configuration that the box dam inside configuration is set
Second protection materials of binding line, and make second protection materials that the metal binding line be completely covered；
Protection cap is installed：It sets to protect second protection materials and the sensor in first protection materials
The protection cap of chip.
5. the manufacturing method of compound sensor module according to claim 4, which is characterized in that other described chips and point
Vertical device is installed as that other chips and discrete device are mounted on substrate using surface mount process.
6. the manufacturing method of compound sensor module according to claim 4, which is characterized in that the sensor chip peace
Fill for by adhesive glue by sensor chip and substrate bonding.
7. the manufacturing method of compound sensor module according to claim 4, which is characterized in that the secondary encapsulation is to adopt
With the mode of drop silica gel protective layer is formed in the inside of the box dam structure or, in the entire sensor chip and its metal
The external of binding line makes protective layer.
8. the manufacturing method of compound sensor module according to claim 4, which is characterized in that the installation of the protection cap
Method is：It is opened up in the first protection materials and the corresponding groove of protection cap shape, then the first protection of filling in the trench
Metal cover is pressed into groove by material when the first protection materials are uncured, treats that the first protection materials are formed by curing protection cap and the
The connection of one protection materials.
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| CN109346415B (en) * | 2018-09-20 | 2020-04-28 | 江苏长电科技股份有限公司 | Packaging method and packaging equipment for selectively packaging structure |
| CN111739843A (en) * | 2020-06-30 | 2020-10-02 | 上海矽睿科技有限公司 | Inertia measuring instrument packaging structure |
| CN111735982A (en) * | 2020-06-30 | 2020-10-02 | 上海矽睿科技有限公司 | Method for packaging accelerometer |
| CN112384025B (en) * | 2020-11-16 | 2021-10-15 | 浙江大学 | Protective device of electronic device and packaging method thereof |
| CN115250572A (en) * | 2021-04-26 | 2022-10-28 | 华为技术有限公司 | Circuit board assembly, manufacturing method thereof, terminal and electronic equipment |
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