CN113612461B - Chip-level airtight packaging technology of SAW filter - Google Patents
Chip-level airtight packaging technology of SAW filter Download PDFInfo
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- CN113612461B CN113612461B CN202110818713.9A CN202110818713A CN113612461B CN 113612461 B CN113612461 B CN 113612461B CN 202110818713 A CN202110818713 A CN 202110818713A CN 113612461 B CN113612461 B CN 113612461B
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- saw filter
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- packaging substrate
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- 238000012536 packaging technology Methods 0.000 title description 4
- 229910052751 metal Inorganic materials 0.000 claims abstract description 71
- 239000002184 metal Substances 0.000 claims abstract description 71
- 238000004806 packaging method and process Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 229920006254 polymer film Polymers 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000003698 laser cutting Methods 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000012858 packaging process Methods 0.000 abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- 241001391944 Commicarpus scandens Species 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010897 surface acoustic wave method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- SWPMTVXRLXPNDP-UHFFFAOYSA-N 4-hydroxy-2,6,6-trimethylcyclohexene-1-carbaldehyde Chemical compound CC1=C(C=O)C(C)(C)CC(O)C1 SWPMTVXRLXPNDP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to a chip-scale airtight packaging process of a SAW filter, which comprises the following steps: respectively arranging metal bumps in metal electrode pattern areas of the SAW filter of the wafer to obtain a bonding wafer; dicing and dicing the SAW filter wafer with the metal bumps; inverting the SAW filter chip with the metal bumps on the packaging substrate, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate; welding the metal convex points on the packaging substrate; sticking a film on the surface of the SAW filter chip by using a polymer film, and solidifying after sticking the film; and cutting to remove the polymer film on the scribing path of the packaging substrate. Dicing and cutting. The advantages are that: the edge of the chip can be well wrapped; the chip is not easy to break, and can be adhered to the chip and the substrate without falling off; meanwhile, the material can be solidified after reaching a certain temperature, the deformation before the material is kept, and the solidified state is still kept after the material is recovered to room temperature; has non-conductivity; can effectively prevent external water vapor from entering the cavity between the chip and the substrate.
Description
Technical Field
The invention relates to the technical field of SAW filter packaging manufacture, in particular to a chip-level airtight packaging process of a SAW filter.
Background
The surface acoustic wave (SurfaceAcousticWave, SAW) filter is a passive device for processing and transmitting signals by utilizing surface acoustic waves, has the advantages of light weight, small volume, high reliability and the like, and is widely applied to the fields of radio communication systems, global satellite positioning systems and the like. The conventional SAW filter is in an airtight package form adopting a ceramic surface-mount package or a metal tube package after wire bonding, and the minimum size is 3mm multiplied by 3mm. In order to avoid the cross short circuit of bonding wires, the bonding wires are generally realized by enlarging the height of a wire arc, and a certain lead space is required to be reserved above a chip, so that the development requirements of further miniaturization and integration of the whole system are difficult to meet. In order to further reduce the package size, the chip scale packaging technology based on flip chip bonding is first proposed in japan, and no spot welding line is needed, so that the lead space is saved. Thus, with further application of chip scale packaging technology, SAW filters are being driven to develop in a smaller package size and lighter weight direction.
At present, most of SAW filters packaged at the chip level for civil use are directly encapsulated by resin materials after flip-chip mounting, and the disadvantage is that the internal atmosphere environment cannot be ensured. In the field of a large number of armaments such as military communication systems, navigation and telemetry, SAW filters with highly reliable packaging are required. The research of the patent finds that the existing packaging method cannot meet the requirement of airtight packaging.
Disclosure of Invention
The invention aims to provide a chip-level airtight packaging process of a SAW filter, which effectively overcomes the defects of the prior art.
The technical scheme for solving the technical problems is as follows:
a chip-scale hermetic packaging process of a SAW filter, comprising the steps of:
s1, respectively arranging metal bumps in metal electrode pattern areas of SAW filters of a wafer to obtain a bonding wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps to obtain the SAW filter chip with the metal bumps;
s3, placing the SAW filter chip with the metal bumps on the packaging substrate in a flip-chip manner, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal convex points on the packaging substrate so as to enable the SAW filter chip and the packaging substrate to form a cavity structure in a surrounding mode, and realizing electrical interconnection between the chip and the packaging substrate;
s5, pasting a film on the surface of the SAW filter chip by using a polymer film under the nitrogen atmosphere of the component obtained in the S4, and solidifying after pasting the film to obtain a structural component with the top and the edge of the SAW filter chip completely wrapped by the polymer film;
s6, cutting and removing the polymer film on the scribing channel of the packaging substrate to expose the cutting channel area on the packaging substrate;
s7, dicing and cutting to obtain the independent SAW filter airtight packaging device.
On the basis of the technical scheme, the invention can be improved as follows.
In S2, the SAW filter wafer with the metal bumps is diced and diced by using a grinding wheel dicing method.
Further, the S5 includes:
s51, placing all the SAW filter chips and the packaging substrate after flip-chip bonding in a vacuum film-sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then solidifying;
and S53, recovering to room temperature after curing to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film.
Further, in S6, the polymer film on the scribe line of the package substrate is removed by a laser cutting method.
In step S7, a grinding wheel dicing method is used for dicing, so that an independent SAW filter airtight packaging device is obtained.
Further, after S6, a metal protection layer fixed to the package substrate is coated on the outside of the coverage area of the polymer film.
Further, the metal protection layer comprises a seed layer formed by sputtering titanium tungsten and copper, and a metal layer formed by electroplating copper, nickel and gold.
The beneficial effects of the invention are as follows: the adhesive phenomenon can not occur at normal temperature, and the film pasting operation is convenient; the adhesive has fluidity and can form good package on the edge of a chip; the adhesive has certain elasticity and certain viscosity at a certain temperature, is not easy to break, can be adhered to a chip and a substrate and is not dropped, and the failure caused by film breakage due to external pressure in the subsequent packaging process can be avoided; meanwhile, the material can be solidified after reaching a certain temperature, the deformation before the material is kept, and the solidified state is still kept after the material is recovered to room temperature; having non-conductivity, can be in the device without performance change. The polymer film packaging structure can effectively prevent external water vapor from entering the cavity between the chip and the substrate, and meanwhile, the normal operation of the device is ensured.
Drawings
FIG. 1 is a schematic diagram of a structure in which metal bumps are respectively disposed in different metal electrode pattern regions of at least one SAW filter on a wafer;
FIG. 2 is a schematic diagram of a structure in which metal bumps of a dicing member are flip-chip mounted on a metal electrode pattern region of a package substrate;
FIG. 3 is a schematic diagram of a structure in which metal bumps of a dicing member are flip-chip bonded to metal electrode pattern regions of a package substrate to form electrical interconnections and to define cavities;
FIG. 4 is a schematic diagram of a structure of a cutting member after vacuum film encapsulation and curing by using a polymer film material;
FIG. 5 is a schematic diagram of a structure after dicing the polymer film material on the streets of the package substrate;
FIG. 6 is a schematic diagram of a SAW filter after packaging without a metal protective layer
FIG. 7 is a schematic diagram of the structure after the metal protection layer is formed;
fig. 8 is a schematic structural diagram of a SAW filter after encapsulation when a metal protective layer is provided.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
Examples: as shown in fig. 1 to 6, the chip-scale hermetic packaging process of the SAW filter of the present embodiment includes the steps of:
s1, respectively arranging metal bumps in metal electrode pattern areas of SAW filters of a wafer to obtain a bonding wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps by adopting a grinding wheel scribing mode to obtain the SAW filter chip with the metal bumps;
s3, placing the SAW filter chip with the metal bumps on the packaging substrate in a flip-chip manner, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal convex points on the packaging substrate so as to enable the SAW filter chip and the packaging substrate to form a cavity structure in a surrounding mode, and realizing electrical interconnection between the chip and the packaging substrate;
s5, pasting a film on the surface of the SAW filter chip by using a polymer film under the nitrogen atmosphere to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film, wherein the specific steps comprise:
s51, placing all the SAW filter chips and the packaging substrate after flip-chip bonding in a vacuum film-sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then solidifying;
s53, after solidification, recovering to room temperature to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film;
s6, cutting and removing the polymer film on the scribing channel of the packaging substrate by adopting a laser cutting method, and exposing a cutting channel area on the packaging substrate;
s7, cutting by adopting a grinding wheel scribing method to obtain the independent SAW filter airtight packaging device.
In the embodiment, a gold wire ball bonding process is adopted to manufacture a metal bump structure in a metal electrode pattern area on the surface of a wafer of the SAW filter, the diameter range of a used gold wire is 15-38 mu m, the diameter range of the metal bump is 50-80 mu m, the thickness range of the metal bump is 15-35 mu m, the diameter of the metal bump is ensured to be smaller than the size of a metal electrode on the SAW filter, the thickness of the metal bump ensures that a cavity structure can be formed after the SAW filter is flip-chip bonded, the wafer substrate is made of a piezoelectric material, the metal electrode c on the SAW filter is made of a metal material, and the metal electrode c can be made of aluminum, gold, copper or other alternative metal materials; the metal electrode e on the packaging substrate is of a surface gold plating structure, and the thickness of the gold layer is more than 0.5 mu m; the packaging substrate j is a printed board, an LTCC substrate or an HTCC substrate and is provided with a metal electrode e and a lead structure; the polymer film h is a special organic material, after the vacuum clamp is adopted for film pasting, the top and the edge of the SAW filter b can be completely wrapped, and the SAW filter has certain elasticity, so that external water vapor can be effectively prevented from entering, and meanwhile, the normal operation of the device can be ensured.
Compared with the traditional process, the process of the embodiment has the following characteristics that the polymer film packaging structure in the packaging structure is provided with: the adhesive phenomenon can not occur at normal temperature, and the film pasting operation is convenient; the adhesive has fluidity and can form good package on the edge of a chip; the adhesive has certain elasticity and certain viscosity at a certain temperature, is not easy to break, can be adhered to a chip and a substrate and is not dropped, and the failure caused by film breakage due to external pressure in the subsequent packaging process can be avoided; meanwhile, the material can be solidified after reaching a certain temperature, the deformation before the material is kept, and the solidified state is still kept after the material is recovered to room temperature; having non-conductivity, can be in the device without performance change. The polymer film packaging structure can effectively prevent external water vapor from entering the cavity between the chip and the substrate, and meanwhile, the normal operation of the device is ensured. Thus, the minimum package size of 1.1mm by 0.9mm can be achieved while passing the air tightness test requirements in GJB 548B-2005.
As a preferred embodiment, as shown in fig. 7 and 8, after S6, a metal protection layer i fixed to the package substrate is coated on the outside of the coverage area of the polymer film.
In this embodiment, the metal protection layer i is titanium tungsten, copper, nickel, gold or other alternative metal materials, specifically, the metal protection layer i includes a seed layer formed by sputtering titanium tungsten, copper, and a metal layer formed by electroplating copper, nickel, gold, and can prevent water vapor from diffusing into the device interior and can strengthen the structure of the whole product.
What needs to be specifically stated is: in the drawings, a refers to a wafer, b refers to a SAW filter, c refers to a metal electrode of the SAW filter, d refers to a metal bump, e refers to a metal electrode of a package substrate, f refers to a cavity formed between the package substrate and the SAW filter, j refers to the package substrate, h refers to a polymer film, and i refers to a metal protection layer.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (6)
1. A chip-scale hermetic packaging method of a SAW filter, comprising the steps of:
s1, respectively arranging metal bumps in metal electrode pattern areas of SAW filters of a wafer to obtain a bonding wafer, wherein a plurality of metal bump structures are distributed on the periphery of each SAW filter;
s2, cutting and slicing the SAW filter wafer with the metal bumps to obtain the SAW filter chip with the metal bumps;
s3, placing the SAW filter chip with the metal bumps on the packaging substrate in a flip-chip manner, and enabling the positions of the metal bumps to correspond to the positions of the metal electrodes of the packaging substrate;
s4, welding the metal convex points on the packaging substrate so as to enable the SAW filter chip and the packaging substrate to form a cavity structure in a surrounding mode, and realizing electrical interconnection between the chip and the packaging substrate;
s5, pasting a film on the surface of the SAW filter chip by using a polymer film under the nitrogen atmosphere of the component obtained in the S4, and solidifying after pasting the film to obtain a structural component with the top and the edge of the SAW filter chip completely wrapped by the polymer film;
s6, cutting and removing the polymer film on the scribing channel of the packaging substrate to expose the cutting channel area on the packaging substrate; coating a metal protection layer fixed with the packaging substrate on the outer side of the coverage area of the polymer film;
s7, dicing and cutting to obtain the independent SAW filter airtight packaging device.
2. The method for hermetically packaging a SAW filter at a chip level of claim 1, wherein: in the step S2, the SAW filter wafer with the metal bumps is diced and diced by using a grinding wheel dicing method.
3. The method of chip-scale hermetic packaging of SAW filters of claim 1, wherein S5 comprises:
s51, placing all the SAW filter chips and the packaging substrate after flip-chip bonding in a vacuum film-sticking clamp;
s52, adopting a polymer film material to carry out film pasting in a vacuum environment, and then solidifying;
and S53, recovering to room temperature after curing to obtain a structural member with the top and the edge of the SAW filter chip completely wrapped by the polymer film.
4. The method for hermetically packaging a SAW filter at a chip level of claim 1, wherein: in the step S6, a laser cutting method is adopted to remove the polymer film on the packaging substrate scribing path.
5. The method for hermetically packaging a SAW filter at a chip level of claim 1, wherein: in the step S7, a grinding wheel scribing method is adopted for cutting, and an independent SAW filter airtight packaging device is obtained.
6. The method for hermetically packaging a SAW filter at a chip level of claim 1, wherein: the metal protection layer comprises a seed layer formed by sputtering titanium tungsten or copper, and a metal layer formed by electroplating copper or nickel or gold.
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| CN202110818713.9A CN113612461B (en) | 2021-07-20 | 2021-07-20 | Chip-level airtight packaging technology of SAW filter |
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| CN202110818713.9A CN113612461B (en) | 2021-07-20 | 2021-07-20 | Chip-level airtight packaging technology of SAW filter |
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| CN112865736A (en) * | 2021-01-20 | 2021-05-28 | 广东省科学院半导体研究所 | SAW filter chip packaging structure, preparation method thereof and electronic equipment |
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