CN112865736A - SAW filter chip packaging structure, preparation method thereof and electronic equipment - Google Patents
SAW filter chip packaging structure, preparation method thereof and electronic equipment Download PDFInfo
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- CN112865736A CN112865736A CN202110075450.7A CN202110075450A CN112865736A CN 112865736 A CN112865736 A CN 112865736A CN 202110075450 A CN202110075450 A CN 202110075450A CN 112865736 A CN112865736 A CN 112865736A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 80
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 230000017525 heat dissipation Effects 0.000 claims abstract description 52
- 229910052709 silver Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 239000010949 copper Substances 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000010944 silver (metal) Substances 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 3
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 3
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 238000003892 spreading Methods 0.000 claims 2
- 229910000679 solder Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 97
- 238000010897 surface acoustic wave method Methods 0.000 description 42
- 238000007789 sealing Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 4
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- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
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- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
Abstract
The invention provides a SAW filter chip packaging structure, a preparation method thereof and electronic equipment, and relates to the field of chip packaging. According to the SAW filter chip packaging structure and the corresponding method and equipment, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on one side, away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the packaged chip is improved, and the miniaturization and ultrathin packaging of the SAW filter chip are facilitated.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a SAW filter chip packaging structure, a preparation method of the SAW filter chip packaging structure and electronic equipment.
Background
Currently, many electronic devices having a communication function are generally provided with a plurality of SAW (Surface Acoustic Wave) filter chips. With the continuous increase of power and frequency of the SAW filter chip, more heat is generated inside the SAW filter chip, and the heat needs to have more structures and spaces to diffuse the heat, which is not favorable for the requirements of miniaturization and ultra-thinning of the SAW filter chip.
That is, when the SAW filter chip is miniaturized and ultra-thinned, there is a problem that heat dissipation is difficult.
Disclosure of Invention
The present invention has been made in view of the above problems, and it is an object of the present invention to provide a SAW filter chip package structure, a method of manufacturing the SAW filter chip package structure, and an electronic device, which can effectively improve heat dissipation efficiency after chip packaging.
Embodiments of the invention may be implemented as follows:
in a first aspect, an embodiment of the present invention provides a SAW filter chip package structure, which includes:
a substrate provided with a ground pin pad;
the chip is inversely arranged on the substrate and is electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
the insulating layer covers the chip, the cavity layer and the substrate, and is provided with holes so as to expose partial areas of the chip and the grounding pin bonding pad;
the metal seed layer is arranged on one side, away from the substrate, of the insulating layer, is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
and the metal heat dissipation layer is arranged on one side of the metal seed layer, which is deviated from the insulating layer, and the metal heat dissipation layer, the metal seed layer and the hole of the insulating layer jointly form the heat dissipation structure of the chip.
In an alternative embodiment, the metal heat dissipation layer is electrically connected to the ground pin pad to form a ground structure and a metal sealing structure.
In an alternative embodiment, the insulating layer includes at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic resin film, a polyimide film, and a liquid crystal polymer film.
In an alternative embodiment, the material of the metal seed layer includes at least one of Cu, Au, Ag, Al, Co, Ni, Ti, W, and Ta.
In an alternative embodiment, the material of the metal heat sink layer comprises at least one of Cu, Au, Ag, Zn, Cd, Sb, Bi, Mn, Co, Ni and tin-silver alloy.
In an optional embodiment, the chip is provided with a first pin pad, the substrate is provided with a second pin pad, and the first pin pad and the second pin pad are connected through an interconnection structure to realize electrical connection between the chip and the substrate.
In an alternative embodiment, the material of the interconnect structure includes at least one of gold, a gold alloy, a silver paste, a tin paste, and a tin-silver-copper alloy.
In an alternative embodiment, the side of the chip facing the substrate is provided with electrodes, which are located within the cavity layer.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a chip package structure of a SAW filter, including:
the chip is inversely arranged on the substrate and is electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
preparing an insulating layer covering the chip, the cavity layer and the substrate, and forming holes in the insulating layer to expose partial areas of the chip and a grounding pin pad of the substrate;
preparing a metal seed layer on one side of the insulating layer, which is far away from the substrate, wherein the metal seed layer is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
and preparing a metal heat dissipation layer on one side of the metal seed layer, which is far away from the insulating layer, wherein the metal heat dissipation layer, the metal seed layer and the hole of the insulating layer jointly form a heat dissipation structure of the chip.
In a third aspect, the present invention provides an electronic device including the SAW filter chip package according to any one of the foregoing embodiments or a SAW filter chip package manufactured by the foregoing method for manufacturing a SAW filter chip package.
The beneficial effects of the embodiment of the invention include, for example:
according to the SAW filter chip packaging structure provided by the embodiment of the invention, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on the side, away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the packaged chip is improved, the chip is favorably miniaturized and ultrathin, and the defects of the conventional chip packaging technology are overcome. Meanwhile, the SAW filter chip packaging structure provided by the embodiment of the invention can obtain a grounding effect and a metal sealing effect by interconnecting the substrate pin pad with the metal seed layer and the metal heat dissipation layer.
Correspondingly, the electronic equipment adopting the SAW filter chip packaging structure also has the characteristics of good heat dissipation effect, good sealing performance and stable and reliable work.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 is a schematic structural diagram of a SAW filter chip package structure according to a first embodiment of the present invention;
fig. 2 is a flowchart illustrating a method for manufacturing a SAW filter chip package according to a second embodiment of the present invention;
fig. 3 to fig. 6 are process flow diagrams of a method for manufacturing a SAW filter chip package according to a second embodiment of the present invention.
Icon: 100-SAW filter chip packaging structure; 200-chip; 210-a first pin pad; 220-an interconnect structure; 230-an electrode; 300-a substrate; 310-a second pin pad; 320-ground pin pad; 400-an insulating layer; 410-well; 500-a metal seed layer; 600-a metal heat dissipation layer; 700-cavity layer.
Detailed Description
The conventional SAW filter chip takes a piezoelectric material as a sound conductor, the heat conductivity of the piezoelectric material is limited, more heat can be generated inside the SAW filter chip along with the continuous improvement of the power of the SAW filter chip, and the heat needs to be diffused by more structures and spaces, so that the packaging requirements of miniaturization and ultrathin of the SAW filter chip are not facilitated. Meanwhile, as the frequency of the SAW filter chip is continuously increased, the finger width of the interdigital electrode of the SAW filter chip is further reduced, and the resistance is increased, so that more heat dissipation is generated.
In view of the above situation, embodiments of the present invention provide a chip packaging structure for a SAW filter, which is capable of effectively increasing a heat dissipation area of a chip by providing a heat dissipation structure made of a metal material on a side of the chip away from a substrate, so as to improve heat dissipation efficiency of the chip after packaging, and facilitate miniaturization and ultra-thin packaging of the SAW filter chip.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.
Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.
The first embodiment:
referring to fig. 1, a SAW filter chip package structure 100 according to an embodiment of the present invention includes a substrate 300, a chip 200, an insulating layer 400, a metal seed layer 500, and a metal heat dissipation layer 600. The substrate 300 is provided with a ground pin pad 320, the chip 200 is inversely arranged on the substrate 300 and electrically connected with the substrate 300, a cavity layer 700 is formed between the chip 200 and the substrate 300, the insulating layer 400 covers the chip 200, the cavity layer 700 and the substrate 300, the insulating layer 400 is provided with a hole so as to expose a partial area of the chip 200 and the ground pin pad 320, the metal seed layer 500 is arranged on one side of the insulating layer 400, which is far away from the substrate 300, the metal seed layer 500 is in contact with the exposed partial area of the chip 200 and is electrically connected with the exposed ground pin pad 320, the metal heat dissipation layer 600 is arranged on one side of the metal seed layer 500, which is far away from the insulating layer 400, and the metal heat dissipation layer 600, the metal seed layer 500 and.
Wherein the side of the chip 200 facing the substrate 300 is provided with an electrode 230 (including an interdigital transducer electrode and an input-output electrode) and a plurality of first pin pads 210, the plurality of first pin pads 210 being arranged around the electrode 230. A side of the substrate 300 facing the chip 200 is provided with a plurality of second pin pads 310.
The first and second lead pads 210 and 310 are connected by an interconnect structure 220. In this embodiment, the interconnection structure 220 includes a plurality of metal balls, and the plurality of metal balls are connected to the plurality of first pin pads 210 in a one-to-one correspondence, and also connected to the plurality of second pin pads 310 in a one-to-one correspondence, so as to achieve physical connection and electrical connection between the chip 200 and the substrate 300. In other embodiments, the interconnect structure 220 may also be cylindrical, rectangular, etc.
The electrode 230, the first lead pad 210, and the second lead pad 310 level interconnect structure 220 are all located within the cavity layer 700. The cavity layer 700 is a filtering function region of the SAW filter chip package structure, and the insulating layer 400 is used for protecting the cavity layer 700, so as to ensure that the filtering function of the SAW filter chip package structure is not affected.
The insulating layer 400 may have various structures as required, and in the present embodiment, the organic protective layer includes at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic resin film, a polyimide film, and a liquid crystal polymer film. Such as a dry film, an insulating tape, an epoxy film, or a combination of an epoxy film and a phenolic film.
In order to reduce the influence of the insulating layer 400 on the heat dissipation of the chip 200 as much as possible and increase the heat dissipation area of the chip 200, in the embodiment, a plurality of holes 410 are provided in the region where the insulating layer 400 covers the chip 200. The holes 410 may be formed in various shapes such as circular, square, triangular, etc., according to the actual situation. The metal seed layer 500 and the metal heat dissipation layer 600 are both partially disposed in the hole 410 and cover a side of the chip 200 facing away from the substrate 300.
The metal heat dissipation layer 600 is electrically connected to the ground pin pad 320 to form a ground structure and a metal sealing structure.
The metal heat dissipation layer 600 may be made of different metal materials according to the circumstances, and in this embodiment, the material of the metal heat dissipation layer 600 includes at least one of Cu, Au, Ag, Zn, Cd, Sb, Bi, Mn, Co, Ni, and tin-silver alloy. For example, Cu, Ag, Zn, Sb, Mn, Co, Ni, a combination of Cu and Ag, a combination of Zn and Sb, or a combination of Ag, Zn, and Ni may be used.
In order to facilitate the preparation of the metal heat dissipation layer 600, in the embodiment, the SAW filter chip package structure 100 further includes a metal seed layer 500, and the metal seed layer 500 is disposed between the chip 200 and the metal heat dissipation layer 600 (i.e., the metal seed layer 500 is disposed on a side of the chip 200 away from the substrate 300, and the metal heat dissipation layer 600 is disposed on a side of the metal seed layer 500 away from the chip 200). The metal seed layer 500 may play a transition role in the preparation process of the metal heat dissipation layer 600, so as to facilitate the molding of the metal heat dissipation layer 600.
The metal seed layer 500 may be made of different metal materials according to different situations, and in this embodiment, the material of the metal seed layer 500 includes at least one of Cu, Au, Ag, Al, Co, Ni, Ti, W, and Ta. For example, Cu, Al, Co, Ni, Ti, a combination of Cu and Al, a combination of Co, Ni and Ti, or the like may be used.
According to the SAW filter chip packaging structure provided by the embodiment of the invention, the insulating layer, the metal seed layer and the metal heat dissipation layer are sequentially arranged on the side, away from the substrate, of the chip, so that the heat dissipation area of the chip can be effectively increased, the heat dissipation efficiency of the packaged chip is improved, the chip is favorably miniaturized and ultrathin, and the defects of the conventional chip packaging technology are overcome.
Second embodiment:
referring to fig. 2, a method for manufacturing a SAW filter chip package structure 100 according to an embodiment of the present invention is used to manufacture the SAW filter chip package structure according to the first embodiment, and the method specifically includes the following steps:
step S100: the chip 200 is flip-chip mounted on the substrate 300 and electrically connected to the substrate 300, so that a cavity layer 700 is formed between the chip 200 and the substrate 300, so as to obtain the device shown in fig. 3. In detail, the interconnection structure 220 is obtained through ball-mounting and surface mounting processes to achieve connection of the first lead pad 210 of the chip 200 and the second lead pad 310 of the substrate 300. The material of the interconnect structure 220 may be a conductive metal material such as gold, gold alloy, silver paste, tin paste, or tin-silver-copper alloy. In the present embodiment, the interconnect structure 220 is made of a gold alloy. In other embodiments, the material of the interconnect structure 220 may also be gold, silver paste, tin paste, or tin-silver-copper alloy.
Step S200: an insulating layer covering the chip 200, the cavity layer 700, and the substrate 300 is prepared to obtain the device shown in fig. 4. In detail, an organic film is attached by a vacuum coating process to obtain the insulating layer 400. Then, a plurality of holes 410 are opened in the region of the insulating layer 400 covering the chip 200, so that a partial region of the chip 200 and the ground pad 320 of the substrate 300 are exposed, thereby obtaining the device shown in fig. 5.
Step S300: preparing a metal seed layer 500 on a side of the insulating layer 400 away from the package body to obtain the device shown in fig. 6, wherein the metal seed layer 500 is in contact with a portion of the exposed chip 200 and is electrically connected to the exposed ground pin pad 320.
Step S400: a metal heat dissipation layer 600 is prepared on a side of the metal seed layer 500 away from the insulating layer 400 to obtain the SAW filter chip package structure 100 shown in fig. 1, and holes of the metal heat dissipation layer, the metal seed layer and the insulating layer together form a heat dissipation structure of the chip to ensure the heat dissipation efficiency of the SAW filter chip package structure 100. The metal heat dissipation layer is electrically connected to the ground pin pad 320 to form a ground structure and a metal sealing structure, the ground structure can facilitate the grounding operation of the SAW filter chip package structure 100, and the metal sealing structure can improve the sealing effect on the ground pin pad 320. The metal seed layer 500 and the metal heat dissipation layer 600 are both prepared by a physical vapor deposition process.
The third embodiment:
an embodiment of the present invention provides an electronic device, which includes the SAW filter chip package structure 100 provided in the first embodiment or the SAW filter chip package structure 100 prepared by the preparation method of the second embodiment, and therefore, the electronic device has the characteristics of good heat dissipation effect and stable and reliable operation.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A SAW filter chip package structure, comprising:
a substrate provided with a ground pin pad;
the chip is inversely arranged on the substrate and is electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
the insulating layer covers the chip, the cavity layer and the substrate, and is provided with holes so as to expose partial areas of the chip and the grounding pin bonding pad;
the metal seed layer is arranged on one side, away from the substrate, of the insulating layer, is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
and the metal heat dissipation layer is arranged on one side of the metal seed layer, which is deviated from the insulating layer, and the metal heat dissipation layer, the metal seed layer and the hole of the insulating layer jointly form the heat dissipation structure of the chip.
2. The SAW filter chip package of claim 1, wherein the metal heat spreading layer is electrically connected to the ground pin pad to form a ground structure and a metal seal structure.
3. The SAW filter chip packaging structure according to claim 1, wherein the insulating layer includes at least one of a dry film, a DAF film, an insulating tape, an epoxy film, a phenolic resin film, a polyimide film, and a liquid crystal polymer film.
4. The SAW filter chip packaging structure of claim 1, wherein the material of the metal seed layer comprises at least one of Cu, Au, Ag, Al, Co, Ni, Ti, W, and Ta.
5. The SAW filter chip package structure of claim 1, wherein the material of the metal heat spreading layer comprises at least one of Cu, Au, Ag, Zn, Cd, Sb, Bi, Mn, Co, Ni, and tin-silver alloy.
6. The SAW filter chip package according to any one of claims 1 to 5, wherein the chip is provided with a first pin pad, the substrate is provided with a second pin pad, and the first pin pad and the second pin pad are connected by an interconnect structure to electrically connect the chip and the substrate.
7. The SAW filter chip package of claim 6, wherein the interconnect structure material comprises at least one of gold, a gold alloy, a silver paste, a solder paste, and a tin-silver-copper alloy.
8. The SAW filter chip package according to claim 1, wherein a side of the chip facing the substrate is provided with an electrode, the electrode being located within the cavity layer.
9. A preparation method of a SAW filter chip packaging structure is characterized by comprising the following steps:
the chip is inversely arranged on the substrate and is electrically connected with the substrate, and a cavity layer is formed between the chip and the substrate;
preparing an insulating layer covering the chip, the cavity layer and the substrate, and forming holes in the insulating layer to expose partial areas of the chip and a grounding pin pad of the substrate;
preparing a metal seed layer on one side of the insulating layer, which is far away from the substrate, wherein the metal seed layer is in contact with the exposed partial area of the chip and is electrically connected with the exposed grounding pin pad;
and preparing a metal heat dissipation layer on one side of the metal seed layer, which is far away from the insulating layer, wherein the metal heat dissipation layer, the metal seed layer and the hole of the insulating layer jointly form a heat dissipation structure of the chip.
10. An electronic device, characterized by comprising the SAW filter chip package according to any one of claims 1 to 8 or the SAW filter chip package manufactured by the manufacturing method of the SAW filter chip package according to claim 9.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113612461A (en) * | 2021-07-20 | 2021-11-05 | 北京航天微电科技有限公司 | Chip-level air tightness packaging process of SAW filter |
| CN114421918A (en) * | 2022-03-31 | 2022-04-29 | 深圳新声半导体有限公司 | Bulk acoustic wave filter chip |
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| CN114421918B (en) * | 2022-03-31 | 2022-06-21 | 深圳新声半导体有限公司 | Bulk acoustic wave filter chip |
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