CN204538012U - A kind of highly reliable glassivation high voltage silicon stack - Google Patents
A kind of highly reliable glassivation high voltage silicon stack Download PDFInfo
- Publication number
- CN204538012U CN204538012U CN201520247306.7U CN201520247306U CN204538012U CN 204538012 U CN204538012 U CN 204538012U CN 201520247306 U CN201520247306 U CN 201520247306U CN 204538012 U CN204538012 U CN 204538012U
- Authority
- CN
- China
- Prior art keywords
- chip
- tungsten electrode
- high voltage
- highly reliable
- glassy layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Abstract
The utility model discloses a kind of highly reliable glassivation high voltage silicon stack, comprise chip and two contact conductors, the two ends being fixed on described chip of two described contact conductor symmetries, wherein, described chip is sintered by multiple tube core lamination and forms, and described contact conductor comprises lead-in wire and tungsten electrode, and described lead-in wire and tungsten electrode are welded to each other connection by silver-bearing copper weld tabs, and the outer surface of described chip is also provided with a glassy layer, described glassy layer adopts passivation glass powder to be made.The utility model with the contact conductor of tungsten electrode due to its stable chemical performance, substantially do not react with mixed acid in chip table top etching forming process, make chip corrosion process controlled, reduce the contamination to table top of metal impurities ion, greatly reduce the normal temperature of product, high temperature reverse leakage current, adopt simultaneously and become glassy layer with the passivation glass powder dusting that tungsten electrode mates, improve the resisting temperature circulation ability of product.
Description
Technical field
The utility model relates to high voltage silicon stack technical field, particularly relates to a kind of highly reliable glassivation high voltage silicon stack.
Background technology
Because most domestic high voltage silicon stack is Plastic Package, product reliability is not high, and the chemical property of plastic construction is unstable, in tube core mesa etch forming process, easy and mixed acid reacts, and makes tube core corrosion process uncontrollable, increases the contamination to table top of metal impurities ion.
Utility model content
The utility model mainly solves technical problem existing in prior art, thus provides a kind of peak-inverse voltage high, and encapsulation volume is little, the highly reliable glassivation high voltage silicon stack that reliability is high.
Above-mentioned technical problem of the present utility model is mainly solved by following technical proposals:
The highly reliable glassivation high voltage silicon stack that the utility model provides, comprise chip and two contact conductors, the two ends being fixed on described chip of two described contact conductor symmetries, wherein, described chip is sintered by multiple tube core lamination and forms, and described contact conductor comprises lead-in wire and tungsten electrode, and described lead-in wire and tungsten electrode are welded to each other connection by silver-bearing copper weld tabs, and the outer surface of described chip is also provided with a glassy layer, described glassy layer adopts passivation glass powder to be made.
Further, the outer surface circumference of described glassy layer is also provided with a seal mark district and a negative pole mark, described seal mark district and the distribution of negative pole marker interval.
Further, described contact conductor and described chip are welded and fixed by aluminium solder.
Further, the model of described passivation glass powder is Q-8412, or other can be used for the passivation glass powder of glass product passivation production.
The beneficial effects of the utility model are: with the contact conductor of tungsten electrode due to its stable chemical performance, substantially do not react with mixed acid in chip table top etching forming process, make chip corrosion process controlled, reduce the contamination to table top of metal impurities ion, greatly reduce the normal temperature of product, high temperature reverse leakage current, under can realizing product 7500V, leakage current is less than 1 μ A, 7500V, at 150 DEG C, high-temperature current leakage is less than 50 μ A, adopt simultaneously and become glassy layer with the passivation glass powder dusting that tungsten electrode mates, improve the resisting temperature circulation ability of product, the ability that product meets-55 DEG C ~ 175 DEG C lower 500 temperature cycles of condition can be realized, product can realize the anti-surge forward current ability of more than 25A simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only embodiments more of the present utility model, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of highly reliable glassivation high voltage silicon stack of the present utility model;
Fig. 2 is the structural representation of the tube core of highly reliable glassivation high voltage silicon stack of the present utility model.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection range of the present utility model.
Consult shown in Fig. 1-2, highly reliable glassivation high voltage silicon stack of the present utility model, comprise chip 1 and two contact conductors 2, the two ends being fixed on chip 1 of two contact conductor 2 symmetries, wherein, chip 1 is sintered by multiple tube core 3 lamination and forms, contact conductor 2 comprises lead-in wire 8 and tungsten electrode 4, lead-in wire 8 and tungsten electrode 4 are welded to each other connection by silver-bearing copper weld tabs, and the outer surface of chip 1 and tungsten electrode 4 is also provided with a glassy layer 5, and glassy layer 5 adopts passivation glass powder to be made.In the utility model, with the contact conductor 2 of tungsten electrode 4 due to its stable chemical performance, substantially do not react with mixed acid in chip 1 mesa etch forming process, make chip 1 corrosion process controlled, reduce the contamination to table top of metal impurities ion, greatly reduce the normal temperature of product, high temperature reverse leakage current, under can realizing product 7500V, leakage current is less than 1 μ A, 7500V, at 150 DEG C, high-temperature current leakage is less than 50 μ A, adopt simultaneously and become glassy layer 5 with the passivation glass powder dusting that tungsten electrode 4 mates, improve the resisting temperature circulation ability of product, the ability that product meets-55 DEG C ~ 175 DEG C lower 500 temperature cycles of condition can be realized, product can realize the anti-surge forward current ability of more than 25A simultaneously.
Concrete, conveniently get seal mark and distinguish both positive and negative polarity, the outer surface circumference of glassy layer 5 being also provided with seal mark district 6 and a negative pole mark 7, seal mark district 6 and negative pole mark 7 spaced apart.Preferably, contact conductor 2 and chip 1 are welded and fixed by aluminium solder.Preferably, the model of passivation glass powder is Q-8412, or other can be used for the passivation glass powder of glass product passivation production.
Above, be only embodiment of the present utility model, but protection range of the present utility model is not limited thereto, any change of expecting without creative work or replacement, all should be encompassed within protection range of the present utility model.Therefore, the protection range that protection range of the present utility model should limit with claims is as the criterion.
Claims (4)
1. a highly reliable glassivation high voltage silicon stack, comprise chip (1) and two contact conductors (2), it is characterized in that: the two ends being fixed on described chip (1) that two described contact conductors (2) are symmetrical, wherein, described chip (1) is sintered by multiple tube core (3) lamination and forms, described contact conductor (2) comprises lead-in wire (8) and tungsten electrode (4), described lead-in wire (8) and tungsten electrode (4) are welded to each other connection by silver-bearing copper weld tabs, and the outer surface of described chip (1) and tungsten electrode (4) is also provided with a glassy layer (5), described glassy layer (5) adopts passivation glass powder to be made.
2. highly reliable glassivation high voltage silicon stack as claimed in claim 1, it is characterized in that: the outer surface circumference of described glassy layer (5) is also provided with a seal mark district (6) and a negative pole mark (7), described seal mark district (6) and negative pole mark (7) spaced apart.
3. highly reliable glassivation high voltage silicon stack as claimed in claim 1, is characterized in that: described contact conductor (2) and described chip (1) are welded and fixed by aluminium solder.
4. highly reliable glassivation high voltage silicon stack as claimed in claim 1, is characterized in that: the model of described passivation glass powder is Q-8412.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520247306.7U CN204538012U (en) | 2015-04-22 | 2015-04-22 | A kind of highly reliable glassivation high voltage silicon stack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520247306.7U CN204538012U (en) | 2015-04-22 | 2015-04-22 | A kind of highly reliable glassivation high voltage silicon stack |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204538012U true CN204538012U (en) | 2015-08-05 |
Family
ID=53751982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520247306.7U Expired - Fee Related CN204538012U (en) | 2015-04-22 | 2015-04-22 | A kind of highly reliable glassivation high voltage silicon stack |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204538012U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598066A (en) * | 2018-04-19 | 2018-09-28 | 如皋市大昌电子有限公司 | A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method |
-
2015
- 2015-04-22 CN CN201520247306.7U patent/CN204538012U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108598066A (en) * | 2018-04-19 | 2018-09-28 | 如皋市大昌电子有限公司 | A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method |
| CN108598066B (en) * | 2018-04-19 | 2019-11-19 | 如皋市大昌电子有限公司 | A kind of highly reliable glassivation high voltage silicon rectifier stack and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103872137A (en) | Enhanced type, depletion type and current induction integrated VDMOS power device | |
| CN204538012U (en) | A kind of highly reliable glassivation high voltage silicon stack | |
| CN104795335B (en) | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack | |
| CN107069066A (en) | A kind of all-vanadium redox flow battery electrolyte and its compound method | |
| CN204130549U (en) | A kind of big current diode passivated mesa structure | |
| CN204497239U (en) | Metallic packaging big current, high voltage, fast recovery diode | |
| CN105449105A (en) | Organic/inorganic hybrid perovskite solar cell | |
| CN106783749A (en) | A kind of super large-scale ceramic package structure | |
| CN204029567U (en) | Water-cooled transformer | |
| CN207690806U (en) | A kind of solar panel | |
| CN206389572U (en) | A kind of combined electrical heat pipe for baking box | |
| CN201946618U (en) | Tube shell of photo-thyristor element | |
| CN101984731A (en) | Single-end quartz glass electric heating tube | |
| CN207250522U (en) | A kind of reverse blocking-up type IGBT | |
| CN201584417U (en) | Thyristor die structure | |
| CN205845707U (en) | A kind of bipolar electrode high voltage ceramic capacitor | |
| CN203967004U (en) | A kind of transmission line is from recovering blow-out device | |
| CN205248251U (en) | High -power total head meets formula IGBT multimode frame ceramic cartridge | |
| CN203327263U (en) | Integrated temperature-measuring and heating armored rectangular cable | |
| CN204720515U (en) | A kind of novel lead foil super lead acid storage battery | |
| CN104362137A (en) | High-heat-dissipativity diode | |
| CN207011016U (en) | A kind of vacuum nano carbon crystal electric heat pipe | |
| CN209233018U (en) | A kind of DC base terminal | |
| CN103578675A (en) | Making method of NTC thermo-sensitive resistor | |
| CN201813566U (en) | Single-end quartz glass electric heating tube |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150805 Termination date: 20180422 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |