CN103578675A - Making method of NTC thermo-sensitive resistor - Google Patents
Making method of NTC thermo-sensitive resistor Download PDFInfo
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- CN103578675A CN103578675A CN201210263942.XA CN201210263942A CN103578675A CN 103578675 A CN103578675 A CN 103578675A CN 201210263942 A CN201210263942 A CN 201210263942A CN 103578675 A CN103578675 A CN 103578675A
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Abstract
The invention discloses a making method of an NTC thermo-sensitive resistor. The method comprises the following steps: making the nanometer ceramic chip of the NTC thermo-sensitive resistor, adopting a rare earth element doping technology, making an environmentally-friendly silver electrode corresponding to a multi-formula system, and adopting a glass packaging technology. By adopting the above technical scheme in the invention, the reliability of the resistor is improved, the resistance consistency is improved, the yield is improved, and the stability and the service life of the resistor are improved.
Description
Technical field
The present invention relates to a kind of resistor, be specifically related to a kind of manufacture method of NTC themistor.
Background technology
NTC themistor is widely used in household electrical appliance, medicine equipment, automobile and other industries, can play temperature survey, temperature-compensating, the effects such as surge current suppression, by conventional industries and information technology, automatic technology, modern management technology combines, realize the informationization of product design manufacture and business administration, the intellectuality that production process is controlled, the numerical control of manufacturing equipment, for the international competitiveness that promotes conventional industries, reverse the situation of the low output of China's economic development high investment, realize economic growth by resource, the factor_driven types such as fund are significant to the driving transformation of science and technology.
The extensive application at home of NTC thermistor starts from the eighties initial stage in last century.In recent years, along with household electrical appliance, automobile, communication apparatus, the update of the products such as Medical Instruments and technological progress, domestic and international market increases day by day to the demand of temperature sensor, NTC thermistor, because of its good performance, becomes one of the leading products in temperature sensor market.From 2006 Nian Qi， China electronics industries, senser and transducer being given priority to one of field as industry, is one of three large pillars of the definite electronics and information industry of country, is considered to the tool electronic technology product of development prospect.The market sales revenue keeps double-digit growth for continuous 3 years.
Present stage, China's NTC thermistor is in stage growth stage, and product variety specification is few, and kind is incomplete, and product structure level is relatively low, production technology imperfection, and the stability of product is poor, exists consistency, and interchangeability is foot phenomenon not.Along with the fast development of electronic product, following NTC thermistor will be less to volume, resistance accuracy is higher, response time trend development faster.
Summary of the invention
The object of the present invention is to provide a kind of NTC themistor, solved the problem that properties of product are unstable, resistance accuracy is not high enough, product power loss is large.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the present invention is achieved through the following technical solutions:
A manufacture method for NTC themistor, is characterized in that: comprise the steps:
1), the making of the nanometer scale ceramics chip of NTC themistor: flow process is batching, a ball milling, dry, secondary ball milling, dry, pulverize, precompressed, Deng static pressure, pre-burning, sintering, adopt nanosize metal oxide as main formula material, obtain constitutionally stable AB204 spinelle Grain-Boundary Phase body, simultaneously, make the power consumption of each batch reduce 48Kw/h, adopt ALO to bury after burning technology, sintering in high temperature A1 atmosphere, in the situation that relatively short time and reduction peak temperature, the sintering peak temperature of quaternary system formula is turned down 1185 degree from 1250 degree, peak temperature keeps sintering to be reduced to 6 hours from 8 hours, can save the electric weight of 18Kw/h.
2), adopt yttrium doping techniques: the yttriums such as zirconium dioxide, yittrium oxide silicon dioxide and brium carbonate are adulterated in right amount, can be equal under conventional process conditions, produce resistance value, the thermistor ceramic chip that heat sensitive index is substantially constant, and reliability is reduced to 0.5% from original 2.7%.
3), the technology of preparing of the corresponding environmental protection silver electrode of polynary formula system: according to the difference of each constituent content in formula system, use the leadless environment-friendly fine silver slurry of appropriate ratio silver content, control in conjunction with inorganic matter volatilization in silver ink firing process, can make the consistency of thermistor ceramics bring up to 95%, one of drift in reliability index drops to 0.8%.
4), glass packaging technique: encapsulation curve vacuumizing by routine, inflated with nitrogen, heat temperature raising, peak temperature, naturally lower the temperature to become and vacuumize, inflated with nitrogen, heat temperature raising, inflated with nitrogen, insulation, fill nitrogen and be heated to peak temperature, the auxiliary control at the uniform velocity of cooling water lowered the temperature, so not only prevented the oxidation of ceramic chip silver electrode but also contact good with silver electrode of Dumet head that make to go between, glass tube sealing has closely effectively been stopped plating acid and the infiltration of solder(ing) paste to chip in resistance use procedure to the parcel of Dumet head, according to the softening point temperature of glass bulb in glass tube sealing characteristic, melting point temperature, characteristic in conjunction with company's vacuum brazing stove, diode glass envelope adopts many cover welding curves with MELF encapsulation, guaranteed that to greatest extent resistance stands identical heating current and package temperature on welding graphite jig, adopt high-power large current flow heats, within 4 minutes, can be rapidly heated to package temperature, can protect the silver electrode of ceramic chip to avoid impacting in 300-500 degree temperature range, guarantee the consistency of thermistor resistance.
Further, one time Ball-milling Time is 8 hours, and the secondary ball milling time is 4 hours, adopts control sintering atmosphere technology to carry out low-temperature sintering.
Beneficial effect of the present invention:
Adopt technical solution of the present invention, improved reliability and the reliability of resistance, improved resistance consistency, promoted yields, improved stability and the useful life of product.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to better understand technological means of the present invention, and can be implemented according to the content of specification, below with preferred embodiment of the present invention, is described in detail as follows.The specific embodiment of the present invention is provided in detail by following examples.
Embodiment
Below in conjunction with embodiment, describe the present invention in detail.
A manufacture method for NTC themistor, is characterized in that: comprise the steps:
1), the making of the nanometer scale ceramics chip of NTC themistor: flow process is batching, a ball milling, dry, secondary ball milling, dry, pulverize, precompressed, Deng static pressure, pre-burning, sintering, adopt nanosize metal oxide as main formula material, obtain constitutionally stable AB204 spinelle Grain-Boundary Phase body, simultaneously, make the power consumption of each batch reduce 48Kw/h, adopt ALO to bury after burning technology, sintering in high temperature A1 atmosphere, in the situation that relatively short time and reduction peak temperature, the sintering peak temperature of quaternary system formula is turned down 1185 degree from 1250 degree, peak temperature keeps sintering to be reduced to 6 hours from 8 hours, can save the electric weight of 18Kw/h.
2), adopt yttrium doping techniques: the yttriums such as zirconium dioxide, yittrium oxide silicon dioxide and brium carbonate are adulterated in right amount, can be equal under conventional process conditions, produce resistance value, the thermistor ceramic chip that heat sensitive index is substantially constant, and reliability is reduced to 0.5% from original 2.7%.
3), the technology of preparing of the corresponding environmental protection silver electrode of polynary formula system: according to the difference of each constituent content in formula system, use the leadless environment-friendly fine silver slurry of appropriate ratio silver content, control in conjunction with inorganic matter volatilization in silver ink firing process, can make the consistency of thermistor ceramics bring up to 95%, one of drift in reliability index drops to 0.8%.
4), glass packaging technique: encapsulation curve vacuumizing by routine, inflated with nitrogen, heat temperature raising, peak temperature, naturally lower the temperature to become and vacuumize, inflated with nitrogen, heat temperature raising, inflated with nitrogen, insulation, fill nitrogen and be heated to peak temperature, the auxiliary control at the uniform velocity of cooling water lowered the temperature, so, the oxidation that has prevented ceramic chip silver electrode contact good with silver electrode of Dumet head that make again to go between, glass tube sealing has closely effectively been stopped plating acid and the infiltration of solder(ing) paste to chip in resistance use procedure to the parcel of Dumet head, according to the softening point temperature of glass bulb in glass tube sealing characteristic, melting point temperature, characteristic in conjunction with company's vacuum brazing stove, diode glass envelope adopts many cover welding curves with MELF encapsulation, guaranteed that to greatest extent resistance stands identical heating current and package temperature on welding graphite jig, adopt high-power large current flow heats, within 4 minutes, can be rapidly heated to package temperature, can protect the silver electrode of ceramic chip to avoid impacting in 300-500 degree temperature range, guarantee the consistency of thermistor resistance.
Further, making a Ball-milling Time is 8 hours, and the secondary ball milling time is 4 hours, adopts control sintering atmosphere technology to carry out low-temperature sintering.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (2)
1. a manufacture method for NTC themistor, is characterized in that: comprise the steps:
1), the making of the nanometer scale ceramics chip of NTC themistor: flow process is batching, a ball milling, dry, secondary ball milling, dry, pulverize, precompressed, Deng static pressure, pre-burning, sintering, adopt nanosize metal oxide as main formula material, obtain constitutionally stable AB204 spinelle Grain-Boundary Phase body, simultaneously, make the power consumption of each batch reduce 48Kw/h, adopt ALO to bury after burning technology, sintering in high temperature A1 atmosphere, in the situation that relatively short time and reduction peak temperature, the sintering peak temperature of quaternary system formula is turned down 1185 degree from 1250 degree, peak temperature keeps sintering to be reduced to 6 hours from 8 hours.
2), adopt yttrium doping techniques: zirconium dioxide, yittrium oxide silicon dioxide or brium carbonate yttrium are adulterated in right amount, can be equal under conventional process conditions, produce resistance value, the thermistor ceramic chip that heat sensitive index is substantially constant, and reliability is reduced to 0.5% from original 2.7%.
3), the technology of preparing of the corresponding environmental protection silver electrode of polynary formula system: according to the difference of each constituent content in formula system, use the leadless environment-friendly fine silver slurry of appropriate ratio silver content, control in conjunction with inorganic matter volatilization in silver ink firing process, can make the consistency of thermistor ceramics bring up to 95%, one of drift in reliability index drops to 0.8%.
4), glass packaging technique: encapsulation curve vacuumizing by routine, inflated with nitrogen, heat temperature raising, peak temperature, naturally lower the temperature to become and vacuumize, inflated with nitrogen, heat temperature raising, inflated with nitrogen, insulation, fill nitrogen and be heated to peak temperature, the auxiliary control at the uniform velocity of cooling water lowered the temperature, glass tube sealing has closely effectively been stopped plating acid and the infiltration of solder(ing) paste to chip in resistance use procedure to the parcel of Dumet head, the softening point temperature of glass bulb in glass tube sealing characteristic, melting point temperature, characteristic in conjunction with company's vacuum brazing stove, diode glass envelope adopts many cover welding curves with MELF encapsulation, guaranteed that to greatest extent resistance stands identical heating current and package temperature on welding graphite jig, adopt high-power large current flow heats, within 4 minutes, can be rapidly heated to package temperature, can protect the silver electrode of ceramic chip to avoid impacting in 300-500 degree temperature range, guarantee the consistency of thermistor resistance.
2. the manufacture method of NTC themistor according to claim 1, is characterized in that: in described step (1), one time Ball-milling Time is 8 hours, and the secondary ball milling time is 4 hours, adopts control sintering atmosphere technology to carry out low-temperature sintering.
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| CN201210263942.XA CN103578675A (en) | 2012-07-27 | 2012-07-27 | Making method of NTC thermo-sensitive resistor |
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| CN201210263942.XA CN103578675A (en) | 2012-07-27 | 2012-07-27 | Making method of NTC thermo-sensitive resistor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106631011A (en) * | 2016-12-07 | 2017-05-10 | 苏州洛特兰新材料科技有限公司 | Thermosensitive conductive composite ceramic material and preparation method thereof |
| CN108492951A (en) * | 2018-03-11 | 2018-09-04 | 南京科敏电子有限公司 | SMD power-types NTC thermistor and its preparation process |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101157550A (en) * | 2007-09-12 | 2008-04-09 | 山东中厦电子科技有限公司 | Low resistance/high B-value negative temperature coefficient thermo-sensitive material and method for preparing same |
| US20090179732A1 (en) * | 2006-09-29 | 2009-07-16 | Murata Manufacturing Co., Ltd. | Ntc thermistor ceramic and ntc thermistor using the same |
-
2012
- 2012-07-27 CN CN201210263942.XA patent/CN103578675A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090179732A1 (en) * | 2006-09-29 | 2009-07-16 | Murata Manufacturing Co., Ltd. | Ntc thermistor ceramic and ntc thermistor using the same |
| CN101157550A (en) * | 2007-09-12 | 2008-04-09 | 山东中厦电子科技有限公司 | Low resistance/high B-value negative temperature coefficient thermo-sensitive material and method for preparing same |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106631011A (en) * | 2016-12-07 | 2017-05-10 | 苏州洛特兰新材料科技有限公司 | Thermosensitive conductive composite ceramic material and preparation method thereof |
| CN108492951A (en) * | 2018-03-11 | 2018-09-04 | 南京科敏电子有限公司 | SMD power-types NTC thermistor and its preparation process |
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Application publication date: 20140212 |