CN108492951A - SMD power-types NTC thermistor and its preparation process - Google Patents
SMD power-types NTC thermistor and its preparation process Download PDFInfo
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- CN108492951A CN108492951A CN201810197845.2A CN201810197845A CN108492951A CN 108492951 A CN108492951 A CN 108492951A CN 201810197845 A CN201810197845 A CN 201810197845A CN 108492951 A CN108492951 A CN 108492951A
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Abstract
The invention discloses a kind of SMD power-types NTC thermistor and its preparation processes, belong to ceramic semiconductors applied technical field.Thermistor of the present invention includes rectangular resistance tile and copper plate electrode, and the copper plate electrode is two, is respectively welded on two surfaces of resistance tile, then the extraction electrode from packaging body, in application, being covered on PCB and welding together with PCB.Compared with micro-current type Chip-R, product electric current of the present invention is larger, using copper plate electrode solder joint, increases conductive cross-sectional area, good heat dissipation.The problem of disk wire type thermistor superelevation is overcome simultaneously, and fever makes moderate progress.
Description
Technical field
The present invention relates to ceramic semiconductors applied technical fields, and in particular to a kind of SMD power-types NTC thermistor and its
Preparation process.
Background technology
In recent years, with the rapid development of electronic products, some high-end electronic products require that small, performance is good, right
There is certain limitation in the space of complete machine, and therefore, designer needs to reduce the occupied space of component.But some current high tension apparatus
All it is that wafer architecture carries two leads, is welded on PCB by lead, can not highly be reduced, leads to not reach reduction sky
Between height requirement, cannot be satisfied manufacturer's demand.
Invention content
In order to overcome above-mentioned shortcoming existing in the prior art, the purpose of the present invention is to provide a kind of SMD power
Type NTC thermistor and its preparation process, the range of choice of raw material of the present invention is wide, method is simple, suitable for industrial requirement.
To achieve the above object, the technical solution adopted in the present invention is as follows：
A kind of SMD power-types NTC thermistor, the thermistor include rectangular resistance tile and copper plate electrode, the copper
Plate electrode is two；Silver layer is first prepared on two surfaces of the resistance tile, then two copper plate electrodes are respectively welded in electricity
It hinders on the silver layer surface of tile both sides (copper plate electrode is parallel with silver layer surface), copper plate electrode is drawn from packaging body, is used
When, copper plate electrode is covered on PCB and welds together with PCB.
Silver layer is first prepared on two surfaces of the resistance tile, copper plate electrode is then respectively welded at tile both sides
On silver layer.
The thermistor is encapsulated using polyphenylene sulfide (CPPS) by hot-melting and injection-molding.
The lead-out mode of the copper plate electrode is：Two copper plate electrodes are from the parallel extraction in the both ends of packaging body, in application, will
The two poles of the earth are directly welded on PCB.
In the thermistor, the specification of rectangular resistance tile is：Length 6.8mm, width 4.8mm, thickness 1.3-2.0mm；
Copper plate electrode is the ribbon copper sheet of thickness 0.2mm, width 3mm；The area of copper plate electrode and the welding surface of rectangular resistance tile
For 3mm × 2.3mm (3mm is copper plate electrode width, and 2.3mm is copper sheet weld length on tile).
The SMD power-types NTC thermistor is manufactured in accordance with the following steps：
(1) preparation of NTC thermistor material powder：
The metal-oxide powder of Mn, Ni, Cu, Co element and the powder of transition elements are uniformly mixed in required ratio,
The oxide molar ratio of Mn, Ni, Cu and Co element is 80 in metal-oxide powder:10:7.5:2.5；It is then placed in high speed
It is ground in ball mill (XHM-400), drying is taken out after grinding, obtain the resistance material powder that granularity is 2-3 μm；
(2) compression moulding：By resistance material powder obtained by step (1) with polyvinyl alcohol (PVA) colloid according to 100：30
Weight ratio mixes merga pass comminutor and prepares 8-10 μm of granular mixture；Granular mixture is pressed into using tablet press machine
Type.
(3) it is sintered：The pre-sintering that step (2) resulting sheet is first carried out at 750 DEG C to destressing, then at 1100 DEG C ± 2
It is sintered 2.5 hours under the conditions of DEG C, porcelain body chip, i.e., the described rectangular resistance tile is obtained after natural cooling；
(4) fine silver electrode and welding copper plate electrode are prepared：The brushing silver paste on the porcelain body chip, high temperature reduction after drying
At fine silver electrode, i.e., the described silver layer；Copper sheet (copper plate electrode) is welded on silver layer；
(5) shell heat melts compacting；The porcelain body chip for welding copper strips is placed in mold, starts heat and melts injection molding machine, with poly-
Diphenyl sulfide (CPPS) heat melts injection molding, and the NTC thermistor is obtained after cooling.
In above-mentioned steps (1) described process of lapping, according to mixture：Deionized water=1：1 weight ratio is to clipping the ball
Deionized water is added in grinding machine, milling time is 3 hours.
In above-mentioned steps (2), the polyvinyl alcohol colloid is according to polyvinyl alcohol：Deionized water=100：16 weight ratio
Polyvinyl alcohol is added in deionized water example, is obtained after stirring and dissolving.Granular mixture in step (2) needs after being made
After 75 DEG C of drying, then it is pressed；Process is；With rotary tablet machine (ZPW-21) finish changing shaping grinding apparatus (7.4 ×
9.6), 1.5 ± 0.05mm of molding thickness, after the completion 750 DEG C of pre-burnings.Graininess powder has mobility, meets molding machine high speed and transports
Turn the consistency of compacting filler.
In above-mentioned steps (4), heat melts welding copper sheet on silver layer, wherein：Heat melts 260 ± 5 DEG C of temperature, time 8-10 point
Clock.
The invention has the advantages that：
1, present invention improves over the technique of conventional negative temperature thermistor make form, including tile making, painting, welding electrode,
In terms of assembling the technical process such as shell and actual use, reached and leaded welding similar product by verifying properties of product
It is horizontal；Meet the requirement of manufacturer；Thermistor product of the present invention is suitable for smaller current (being not more than 10 amperes).
2, compared with micro-current type Chip-R, product electric current of the present invention is larger, using copper plate electrode solder joint, increases and leads
The cross-sectional area of electricity, good heat dissipation.The problem of disk wire type thermistor superelevation is overcome simultaneously, and fever makes moderate progress.
Description of the drawings
Fig. 1 is SMD power-types NTC thermistor structural schematic diagram of the present invention.
Fig. 2 is existing disk thermistor structure schematic diagram.
Fig. 3 is resistance specification in embodiment 1.
Fig. 4 is embodiment 1 and 1 product of comparative example degree of contrast on PCB；Wherein：(a) comparative example 1；(b) embodiment 1；
L1+L2 is height.
Fig. 5 is resistance product design and size prepared by embodiment 2；Wherein：(a) and (b) be this product with different view
The overall appearance of observation.
Specific implementation mode
The present invention is described in detail below in conjunction with attached drawing.
The structure of SMD power-types NTC thermistor of the present invention is as shown in Figure 1 comprising rectangular resistance tile and copper sheet electricity
Pole, prepared by two surfaces of resistance tile have silver electrode, and the copper plate electrode is two, and two copper plate electrodes are respectively welded at porcelain
On the silver electrode layer on piece two sides；Two copper plate electrodes are drawn from packaging body, and copper plate electrode is directly covered on PCB simultaneously when in use
Weld together with PCB.The thermistor is encapsulated using polyphenylene sulfide (CPPS) by hot-melting and injection-molding.
The lead-out mode of the copper plate electrode is：Both sides (the width direction of packaging body of two copper plate electrodes from packaging body
Two sides on) parallel extraction, in use, copper plate electrode is directly welded on PCB.
Comparative example 1：
Conventional disk electric resistance structure is as shown in Figure 2.Disk resistance be with two diameter 0.8mm, length 7.5-27mm it is naked
On the round tile of conducting wire weldering, exit is welded on PCB, is generated heat under the action of electric current, and the size and conducting wire of heat are generated
Length, sectional area and conductor material determine；According to R=δ × L/S, (R is resistance, and δ is resistivity, and L is conductor length, and S is
Sectional area of wire), resistance is bigger, and it is bigger to generate heat.Each section specification such as Fig. 4 and table 1 of disk resistance in this example.
Table 1
| DMax | LlMax | L2Min | F | TMax | d |
| 10.5 | 16.0 | 20 | 7.5±1.0 | 5.0 | 0.8±0.06 |
Table 2
| Al(mm) | A2(mm) | W1(mm) | B(mm) | B1(mm) |
| 4.8±0.2 | 0.9±0.11 | 3.0±0.11 | 6.8±0.2 | 2.3±0.1 |
Embodiment 1：
SMD power-types NTC thermistor is the bar shaped copper sheet horizontal welding using thickness 0.20mm, width 3mm in the present embodiment
On resistance tile, by melting injection molding with CPPS (polyphenylene sulfide) heat, copper plate electrode is being drawn in packaging body same level, it should
Resistance the size of each part is as shown in figure 3 and table 2.Product be attached on PCB directly welding (being contacted with PCB " zero "), without space away from
From the device becomes short on PCB in this way.
The present embodiment product highly substantially reduces compared with wafer type device in comparative example 1 on PCB.Disk resistance is
Round tile both sides are welded on by two bare conductors, it is variant by scale lengths；It is 9mm with the corresponding disc diameter of product of the present invention
(add outer encapsulating insulating materials after in 10mm or so), lead to disk shortest length 27mm, in addition piece diameter height is about 36mm.And
The SMD products of the present invention are rectangle tile horizontal positions, and electrode copper sheet is drawn by axial both sides, while eliminating lead and circle
The length of tile diameter is finally melted with polyphenylene sulfide (PPS) heat and is molded, and whole height is between 4 ± 0.5mm, with band
Lead product (comparative example 1) is substantially reduced compared to whole height.Such as data in Fig. 4 and table 1.
The present invention due to conductive electrode use copper sheet, cross section increase, and reduce rectangular resistance to PCB conduction away from
From, therefore conductive exothermal amount reduces.
Embodiment 2：
The present embodiment is the preparation process of SMD power-type NTC thermistors, and technological process is：Dispensing, grinding, granulation, at
Type, firing apply electrode, survey resistance value, welding electrode copper sheet, test electric current, shell press fitting and disk seal packaging；Specifically include following step
Suddenly：
(1) preparation of NTC thermistor material powder：
By the metal-oxide powder of the elements such as Mn, Ni, Cu, Co, (molar ratio is 80 successively:10:7.5:And mistake 2.5)
The powder for crossing element is uniformly mixed in required ratio, and gained mixture is put into high speed ball mill (XHM-400) and is ground, and grinds
Drying is taken out after mill, obtains the resistance material powder that granularity is 2-3 μm；Wherein：In the process of lapping, according to mixture：It goes
Ionized water=1：Deionized water is added in 1 weight ratio, and milling time is 3 hours.
(2) it is granulated：Resistance material powder obtained by step (1) is put into comminutor (YK-16A), while PVA colloids are added
Stir 1 hour (powder and PVA gel weights ratio 100：30) 8-10 μm of granular mixture, is obtained；It is processed into granular
Purpose is that particle has good mobility in molding process.
(3) compression moulding；Shaping grinding apparatus (7.4 × 9.6) grinding tool, molding thickness are finished changing with rotary tablet machine (ZPW-21)
1.5±0.05mm。
(4) it is sintered：First at 750 DEG C carry out destressing pre-sintering, then use LS-2 vertical sintering furnaces, 1100 DEG C ±
It is sintered 2.5 hours under 2 DEG C of temperature conditions, natural cooling, obtains porcelain body chip.
(5) electrode is applied；According to required resistance value, the conductive area of chip is set, according to R=δ × L/S (R- resistance, δ-
Conductivity, L- tile thickness, S- conductive areas), the conductive cross-sectional area when product is 5 ohm of resistance is 21.12 squares of millis
Rice (the conductivity δ=80, L of product material system described in S=δ × L/R are that the thickness 1.32mm, R of product after being sintered are 5 ohm), applies
Silver-colored area is set as 5.28 × 4.00=21.12 square millimeters on 6.8 × 4.8 tiles, and sample resistance value is qualified, batch operation,
On Tu Yinji (Sx-P5030), to good photocopy template and applied product aluminium sheet position, brushed with electronic silver paste, after drying
It is reduced into fine silver electrode with 800 DEG C.
(6) silver strip resistance value is tested, with semi-automatic XP-H test machines, sets resistance value acceptability limit (4-6 on computers
Ohm), booting sub-elects resistance value qualified products.
(7) it welds；It is put into aluminum alloy pattern plate with mono- row's copper strips of 0.2mm × 3mm (a whole row 10 to), both sides is coated with tin cream
Silver strip is inserted into copper strips respectively, and the silver strip that entire row is plugged is placed on aluminium dish frame, by 265 DEG C ± 5 DEG C of heat melt kiln 10 minutes into
Row heat melts welding.
(8) testing current；With RM1-III type current surge instruments, 3 amperes of ranges are transferred to, capacitance is transferred to 330UF, to every
Product is detected
(9) shell heat melts compacting；Start heat and melt injection molding machine, product line row, which is placed on heat, melts in mould, uses polyphenylene sulfide
(CPPS) heat melts injection molding, after automatic release is cooling, into packaging.
The job applications principle of product：Moment, which is opened, when electric appliance will produce prodigious surge current, it can be to some electronics devices
Part is damaged or is damaged, and substantially reduces service life, is serially connected on power circuit when the product, when opening power supply, due to
The effect of resistance value can hinder the surge current of moment, make other original papers by less than huge inrush current shock, protected
Shield.Electric appliance is started to work, and temperature is stepped up, and resistance value drastically declines (subzero temperature thermistor characteristic；Temperature increases, and resistance value subtracts
It is small), when electric current is stablized, resistance value can be ignored (similar to conducting wire) and effectively hinder surge using this characteristic of the product
Injury of the electric current to other elements.
NTC thermistor structure and specification manufactured in the present embodiment are as shown in Fig. 5 and table 3, product type parameter such as 4 figure of table
In 5 (a), black portions are polyphenylene sulfide shell (insulators), and lower section white is the welding on copper plate electrode i.e. Fig. 5 (b)
Face.
Table 3
H1 is total height (thickness of H1=H+ copper sheets)
4 product type parameter of table
Each parameter interpretation is as follows in table 4：
Rated resistance：Resistance value of the NTC thermistor in 25 DEG C of fiducial temperature；
Maximum steady state electric current：When NTC is worked normally, the operating current that can bear；
Residual resisitance：Resistance value (v resistance terminal voltage/Imax) of the resistance performance under maximum steady state current status.
Dissipation factor (δ)：In the case where providing environment temperature, NTC thermistor dissipation factor is that the power to dissipate in resistance becomes
Change the ratio of temperature change corresponding with resistive element.
Thermal time constant (τ)：Under zero-power conditions, when temperature jump, the temperature change of thermistor beginning and end two
A temperature difference 63.2% when required time, thermal time constant is directly proportional to the thermal capacity of NTC thermistor, with its dissipative system
Number is inversely proportional.
Capacitance：Thermistor can bear the capacity of anti-current impact.
Above although the embodiments of the invention are described in conjunction with the attached drawings, but patent owner can want in appended right
Various deformations or amendments are made within the scope of asking, as long as it does not exceed the scope of protection described in the claims to the invention, all
It should be within protection scope of the present invention.
Claims (9)
1. a kind of SMD power-types NTC thermistor, it is characterised in that：The thermistor includes rectangular resistance tile and copper sheet electricity
Pole, the copper plate electrode are two；Silver layer is first prepared on two surfaces of the resistance tile, then distinguishes two copper plate electrodes
It is welded on the silver layer surface of resistance tile both sides, copper plate electrode is drawn from packaging body, in application, copper plate electrode is covered on
PCB is upper and welds together with PCB.
2. SMD power-types NTC thermistor according to claim 1, it is characterised in that：The thermistor uses polyphenylene sulfide
Ether is encapsulated by hot-melting and injection-molding.
3. SMD power-types NTC thermistor according to claim 1, it is characterised in that：The extraction side of the copper plate electrode
Formula is：Two copper plate electrodes are from the parallel extraction in the both ends of packaging body, in application, the two poles of the earth are directly welded on PCB.
4. according to any SMD power-type NTC thermistors of claim 1-3, it is characterised in that：In the thermistor,
The specification of rectangular resistance tile is：Length 6.8mm, width 4.8mm, 1.3~2.0mm of thickness；Copper plate electrode be thickness 0.2mm,
The ribbon copper sheet of width 3mm；The area of copper plate electrode and the welding surface of rectangular resistance tile is 3mm × 2.3mm.
5. according to the preparation process of any SMD power-type NTC thermistors of claim 1-3, which is characterized in that the work
Skill includes the following steps：
(1) preparation of NTC thermistor material powder：
The metal-oxide powder of Mn, Ni, Cu, Co element and the powder of transition elements are uniformly mixed in required ratio, then
It is put into high speed ball mill and is ground, drying is taken out after grinding, obtain the resistance material powder that granularity is 2-3 μm；
(2) compression moulding：By resistance material powder obtained by step (1) with polyvinyl alcohol colloid according to 100：30 weight ratio is mixed
Merga pass comminutor prepares 8-10 μm of granular mixture；Use tablet press machine compression moulding, molding thick granular mixture
Spend 1.5 ± 0.05mm；
(3) it is sintered：The pre-sintering that step (2) resulting sheet is first carried out at 750 DEG C to destressing, then in 1100 DEG C of ± 2 DEG C of items
It is sintered 2.5 hours under part, porcelain body chip, i.e., the described rectangular resistance tile is obtained after natural cooling；
(4) fine silver electrode and welding copper plate electrode are prepared：The brushing silver paste on the porcelain body chip, high temperature reduction Cheng Chun after drying
Silver electrode, i.e., the described silver layer；Copper plate electrode is welded on silver layer；
(5) shell heat melts compacting；The porcelain body chip for welding copper strips is placed in mold, starts heat and melts injection molding machine, use polyphenylene sulfide
Ether heat melts injection molding, and the NTC thermistor is obtained after cooling.
6. the preparation process of SMD power-types NTC thermistor according to claim 5, it is characterised in that：Step (1) institute
It states in process of lapping, according to mixture：Deionized water=1：Deionized water is added into high speed ball mill for 1 weight ratio, grinds
Time consuming is 3 hours.
7. the preparation process of SMD power-types NTC thermistor according to claim 5, it is characterised in that：In step (2),
The polyvinyl alcohol colloid is according to polyvinyl alcohol：Deionized water=100：Deionization is added in polyvinyl alcohol by 16 weight ratio
In water, obtained after stirring and dissolving.
8. the preparation process of SMD power-types NTC thermistor according to claim 6, it is characterised in that：In step (2)
Granular mixture be made after need after being dried at 75 DEG C, then be pressed.
9. the preparation process of SMD power-types NTC thermistor according to claim 5, it is characterised in that：In step (4),
Heat melts welding copper strips on silver layer, wherein：Heat melts 260 ± 5 DEG C of temperature, time 8-10 minute.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114716763A (en) * | 2022-03-23 | 2022-07-08 | 华润化学材料科技股份有限公司 | Anti-aging conductive polypropylene functional material and preparation method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102285789A (en) * | 2011-05-31 | 2011-12-21 | 中国科学院新疆理化技术研究所 | Pb-containing four-component system thermosensitive resistor with negative temperature coefficient |
| CN103578675A (en) * | 2012-07-27 | 2014-02-12 | 苏州星火电子科技有限公司 | Making method of NTC thermo-sensitive resistor |
| CN203456211U (en) * | 2013-07-18 | 2014-02-26 | 南京科敏电子有限公司 | Novel NTC (negative temperature coefficient) thermistor |
| CN103616087A (en) * | 2013-10-28 | 2014-03-05 | 天津科技大学 | A temperature and humidity sensor of a refrigerated transport carrier and a producing method thereof |
| CN104860683A (en) * | 2014-02-26 | 2015-08-26 | 东莞市国研电热材料有限公司 | All-in-one ceramic heating member and preparation technology thereof |
| CN205645422U (en) * | 2016-05-09 | 2016-10-12 | 兴勤（常州）电子有限公司 | Paster type SMD positive temperature coefficient thermistor |
-
2018
- 2018-03-11 CN CN201810197845.2A patent/CN108492951A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102285789A (en) * | 2011-05-31 | 2011-12-21 | 中国科学院新疆理化技术研究所 | Pb-containing four-component system thermosensitive resistor with negative temperature coefficient |
| CN103578675A (en) * | 2012-07-27 | 2014-02-12 | 苏州星火电子科技有限公司 | Making method of NTC thermo-sensitive resistor |
| CN203456211U (en) * | 2013-07-18 | 2014-02-26 | 南京科敏电子有限公司 | Novel NTC (negative temperature coefficient) thermistor |
| CN103616087A (en) * | 2013-10-28 | 2014-03-05 | 天津科技大学 | A temperature and humidity sensor of a refrigerated transport carrier and a producing method thereof |
| CN104860683A (en) * | 2014-02-26 | 2015-08-26 | 东莞市国研电热材料有限公司 | All-in-one ceramic heating member and preparation technology thereof |
| CN205645422U (en) * | 2016-05-09 | 2016-10-12 | 兴勤（常州）电子有限公司 | Paster type SMD positive temperature coefficient thermistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114716763A (en) * | 2022-03-23 | 2022-07-08 | 华润化学材料科技股份有限公司 | Anti-aging conductive polypropylene functional material and preparation method thereof |
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