CN202352679U - Glass-passivated high-power diode - Google Patents
Glass-passivated high-power diode Download PDFInfo
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- CN202352679U CN202352679U CN201120517274XU CN201120517274U CN202352679U CN 202352679 U CN202352679 U CN 202352679U CN 201120517274X U CN201120517274X U CN 201120517274XU CN 201120517274 U CN201120517274 U CN 201120517274U CN 202352679 U CN202352679 U CN 202352679U
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- glassivation
- glass
- passivated
- single tube
- base
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Abstract
The utility model discloses a glass-passivated high-power diode. The glass-passivated high-power diode comprises base (1), wherein one set of glass-passivated single tubes (2) with cut pipe leading wires is arranged on the base, the bottom of each glass-passivated single pipe is sintered with the base, and the top of each glass-passivated single pipe is sintered with an electrode (3). According to the glass-passivated high-power diode, due to the performance advantage of a glass-passivated entity packaging diode and the mode that the plurality of glass-passivated single tubes are connected with one another in parallel, the glass-passivated single tubes are sintered on the metal base. Technologically, according to the normal technological process to the forming working procedure of the glass-passivated entity packaging diode, and the technical means such as single tube matching test, linear cutting and two-time sintering are adopted, the glass-passivated entity packaging diode which can be applied within a high-power range can be made.
Description
Technical field
The utility model relates to a kind of glassivation heavy-duty diode, belongs to technical field of manufacturing semiconductors.
Background technology
The glassivation entity encapsulation diode of extensive use in the market is a kind of device that utilizes special fused glass that tube core is sealed.Because it adopts the material-molybdenum of fused glass material coefficient of thermal expansion coefficient and silicon and lead-in wire electrode very approaching, hot matching performance is good, and each parts is sealed by fused glass in the manufacturing, and consolidation is an entity, and mechanical strength is high, and can tolerate the hurried variation of temperature.Therefore it is good to have air-tightness, and volume is little, and the working temperature interval is wide, the reliability advantages of higher.But because the restriction of various factorss such as such device its specific structure and manufacturing process, area can not be excessive when its chip is designed, and this has also caused it in low power range, to use.Maximum being merely about 10A of at present this on the market glassivation encapsulation diode operation electric current.
Therefore, the product of in high-power scope, using on the market seals device for the sky of metallic packaging mostly, complex manufacturing process, and the production environment of part, equipment and encapsulation requires high.
Summary of the invention
The purpose of the utility model is, a kind of mode and device of realizing glassivation diode high-power applications is provided.Solve the little technical problem of glassivation encapsulation diode operation electric current.
The technical scheme of the utility model:
A kind of glassivation heavy-duty diode comprises base, and base is provided with the glassivation single tube of one group of excision pipe lead-in wire, glassivation single tube bottom and base sintering, glassivation single tube top and electrode sintering.
In the aforementioned glassivation heavy-duty diode, said base is provided with location hole and fixing hole.
In the aforementioned glassivation heavy-duty diode, the quantity of said location hole equals the quantity of glassivation single tube, and the location hole diameter is less than the diameter of glassivation single tube, and the glassivation single tube is arranged in location hole.
Compared with prior art, the utility model utilizes the feature performance benefit of glassivation entity encapsulation diode, through the mode of many glassivation single tubes parallel connections, with glassivation single tube sintering on metab.On technology, to molding procedure, the glassivation entity that adopts technological means such as the test of single tube matching, line cutting, double sintering to process then can in high-power scope, to use encapsulates diode by glassivation entity encapsulation diode normal process flow.
Description of drawings
Fig. 1 is the structural representation of the utility model;
Fig. 2 is the glassivation single tube;
Fig. 3 is the glassivation single tube behind the excision lead-in wire;
Fig. 4 is the structural representation of base.
Be labeled as among the figure: 1-base, 2-glassivation single tube, 3-electrode, 4-location hole, 5-fixing hole, 6-lead-in wire.
Embodiment
Present embodiment is not as any restriction to the utility model.
Embodiment.A kind of glassivation heavy-duty diode, as shown in Figure 1.Comprise base 1, base 1 is provided with the glassivation single tube 2 of one group of excision pipe lead-in wire, glassivation single tube 2 bottoms and base 1 sintering, glassivation single tube 2 tops and electrode 3 sintering.Base is as shown in Figure 4, and base 1 is provided with location hole 4 and fixing hole 5.The quantity of location hole 4 equals the quantity of glassivation single tube 2, and location hole 4 diameters are less than the diameter of glassivation single tube 2, and glassivation single tube 2 is arranged in location hole 4.
The implementation principle of the utility model
Realize the mode of glassivation diode high-power applications, as shown in Figure 1.This mode be with many glassivation single tubes 2 in parallel sintering on metab 1, glassivation single tube 2 other ends and electrode 3 sintering; Realize the application of the high-power aspect of glassivation diode.Said many glassivation single tubes 2 encapsulate the diode normal process flow to molding procedure by the glassivation entity.Said many glassivation single tubes 2 are answered electric coupling, and matching principle is by forward voltage drop V
F, reverse breakdown voltage V
BRWith t reverse recovery time
RrOrder screen.The absolute value of the forward voltage drop difference between many glassivation single tubes 2 | Δ V
F|≤0.05VI
F=I
O, the reverse breakdown voltage difference absolute value | Δ V
BR|≤10%V
BR, reverse recovery time | Δ t
Rr|≤20%t
RrGlassivation single tube 2 usefulness wire cutting machines excision lead-in wire 6, as shown in Figure 3, the absolute value of the glassivation single tube difference in height after the cutting | Δ H|≤0.1mm, the glassivation single tube end face after the cutting is smooth.Said metab 1 is provided with the location hole 4 that equates with glassivation single tube quantity, and glassivation single tube 2 is seated on the location hole 4.Said sintering adopts the slicker solder silver solder; The sintering furnace temperature is 430 ℃, and sintering time is 45 minutes.
The utility model is implemented by following processing step:
1, glassivation single tube 2 is made:
As shown in Figure 1, the silicon chip of carrying out PN junction and metal layer is cut by corresponding size, the tube core to well cutting carries out mesa etch, freezes then, operation such as cleaning, moulding processes glassivation single tube 2.Specifically: make ZL057 type silicon fast-recovery commutation module; The silicon chip of carrying out PN junction and metal layer is cut into the tube core of Ф 3mm on request, and the tube core to well cutting carries out mesa etch, freezes then, operations such as cleaning, moulding process the single tube of glassivation encapsulation.
, glassivation single tube 2 matchings tests:
Glassivation single tube 2 is carried out parameters such as forward voltage drop, reverse recovery time and reverse breakdown voltage test, and it is carried out stepping.The stepping principle comes to confirm its testing sequence, the i.e. order of stepping from high to low according to the importance of the coupling in each parameter: forward voltage drop → reverse breakdown voltage → reverse recovery time.Specifically: glassivation single tube 2 is carried out parameters such as forward voltage drop, reverse recovery time and reverse breakdown voltage test, and it is carried out stepping, the order of stepping: forward voltage drop V
F→ reverse breakdown voltage V
BR→ reverse recovery time t
RrRequire | Δ V
F|≤0.05V (I
F=I
O), | Δ V
BR|≤10%V
BR, | Δ t
Rr|≤20%t
Rr(V
BRAnd t
RrBe normal values).
, lead-in wire excision:
Like Fig. 3 and shown in Figure 4,, to guarantee during cutting that the difference in height after 2 cuttings of every glassivation single tube is more little good more with lead-in wire 6 excisions of wire cutting machine with glassivation single tube 2.Specifically: will divide of lead-in wire 6 excisions of the glassivation single tube 2 usefulness wire cutting machines of retaining, and will guarantee the difference in height after every glassivation single tube 2 cuts during cutting with glassivation single tube 2 | Δ H|≤0.1mm, the cutting rear end face is smooth.
, the base burn-back:
As shown in Figure 2; Glassivation single tube 2 equidistance are arranged on the base 1,, glassivation single tube 2 equidistance are arranged on the base for the distance that guarantees 2 of glassivation single tubes equates; The location hole of 4 equidistance of processing on base 1; As shown in Figure 2: employing slicker solder silver solder is with base 1, glassivation single tube 2 and upward lead-in wire 6 is sintered together, and the sintering furnace temperature is transferred to 400 ℃～480 ℃, and the time is 40～60 minutes.
Claims (3)
1. glassivation heavy-duty diode; It is characterized in that: comprise base (1); Base (1) is provided with the glassivation single tube (2) of one group of excision pipe lead-in wire, glassivation single tube (2) bottom and base (1) sintering, glassivation single tube (2) top and electrode (3) sintering.
2. according to the said glassivation heavy-duty diode of claim 1, it is characterized in that: said base (1) is provided with location hole (4) and fixing hole (5).
3. according to the said glassivation heavy-duty diode of claim 2; It is characterized in that: the quantity of said location hole (4) equals the quantity of glassivation single tube (2); Location hole (4) diameter is less than the diameter of glassivation single tube (2), and glassivation single tube (2) is arranged in location hole (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120517274XU CN202352679U (en) | 2011-12-10 | 2011-12-10 | Glass-passivated high-power diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201120517274XU CN202352679U (en) | 2011-12-10 | 2011-12-10 | Glass-passivated high-power diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202352679U true CN202352679U (en) | 2012-07-25 |
Family
ID=46541654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201120517274XU Expired - Fee Related CN202352679U (en) | 2011-12-10 | 2011-12-10 | Glass-passivated high-power diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202352679U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569106A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Method and device for implementing high-power application of glass passivation diode |
| CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
-
2011
- 2011-12-10 CN CN201120517274XU patent/CN202352679U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569106A (en) * | 2011-12-10 | 2012-07-11 | 中国振华集团永光电子有限公司 | Method and device for implementing high-power application of glass passivation diode |
| CN102569106B (en) * | 2011-12-10 | 2015-04-15 | 中国振华集团永光电子有限公司 | Method for implementing high-power application of glass passivation diode |
| CN105932071A (en) * | 2016-06-20 | 2016-09-07 | 滨州德润电子有限公司 | Low-temperature difficult-to-damage high-power diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120725 Termination date: 20181210 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |