CN102064107A - High-voltage diode for frequency-variable microwave oven and production process thereof - Google Patents
High-voltage diode for frequency-variable microwave oven and production process thereof Download PDFInfo
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- CN102064107A CN102064107A CN2010105812498A CN201010581249A CN102064107A CN 102064107 A CN102064107 A CN 102064107A CN 2010105812498 A CN2010105812498 A CN 2010105812498A CN 201010581249 A CN201010581249 A CN 201010581249A CN 102064107 A CN102064107 A CN 102064107A
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- diffusion
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- tube core
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention relates to a high-voltage diode for a frequency-variable microwave oven and a production process thereof. A plurality of diodes are stacked together in the same direction, two P-type silicon chips are arranged at the two ends of each diode, and a single diode has a P<+>NN<+>type silicon chip structure; processes of phosphorus and boron diffusion, alloying, cutting, assembling, passivating, packaging and the like are adopted, so that the voltage resistance and surge resistance of the high-voltage diode for the frequency-variable microwave oven are improved, switching loss and power consumption are reduced, and reliability is improved; therefore, the fire power of the frequency-variable microwave oven is uniformly regulated on the premise of not damaging the microwave oven, and the reliability and service life of the microwave oven are ensured.
Description
Technical field
The present invention relates to crystal diode chip production technical field, be particularly related to a kind of variable frequency microwave stove high-voltage diode and production technology thereof, drive magnetron by the frequency conversion mode, make the power output of microwave oven can realize continuously adjustable, utilize change frequency to control the power of power output, make the firepower of microwave oven adjustable.
Background technology
The high-voltage diode that the microwave current stove uses is the power frequency high voltage diode.1), power frequency high voltage diode antisurge ability prior art existing problems comprise:.2), the loss of power frequency high voltage diode switch is big.3), the product power consumption is big, temperature rise is fast.
Summary of the invention
Purpose of the present invention is exactly for overcoming the deficiencies in the prior art, design a kind of variable frequency microwave stove usefulness high-voltage diode and production technology thereof, structure, improved high-voltage diode the antisurge ability, reduced switching loss and power consumption, reduced temperature rise, be applicable to the use of the high-frequency variation of variable frequency microwave stove, make the firepower heating become even.
The present invention realizes by such technical scheme:
A kind of variable frequency microwave stove production technology of high-voltage diode is characterized in that:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by multiple working procedures such as acid, alkali, deionized waters;
2) phosphorus boron diffusion: the original silicon chip that cleans up, constant temperature diffusion in 1200～1250 ℃ of diffusion furnaces;
3) diffusion reprocessing:, silicon chip is separated and the removal oxide-film with acid, deionized water ultrasonic cleaning;
4) diffusion check: square resistance, junction depth, the reverse recovery time of test diffusion back silicon chip;
5) platinum diffusion: expand and go into metal platinum, reduce reverse recovery time, improve frequency;
6) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust;
7) nickel plating, gold-plated: with the silicon chip shakeout after the sandblast, cleaning, in special-purpose coating bath, carry out nickel plating, gold-plated, drying;
8) alloy: with the silicon chip after the nickel plating, the slicker solder weld tabs, the mould of packing into is in order put in 200～250 ℃ the sintering furnace and is carried out sintered alloy;
9) cut off: the tube core that cuts into required size with the silico briquette of cutting machine after alloy;
10) survey in: with positive test instrument test dies forward voltage drop;
11) corrosion: the tube core after will testing carries out acid corrosion;
12) assembling: the tube core after will corrode, the mould of packing into that goes between, put in 200～250 ℃ the sintering furnace and carry out sintering;
13) clean: the cleaning die of packing into of the tube core after the assembling cleans;
14) passivation protection: after the tube core after will assembling cleans up, be coated with protection glue and curing;
15) encapsulation: the plastic package die of packing into of the tube core after will solidifying encapsulates;
16) solidify the back: the high-voltage diode behind the plastic packaging is put into baking oven carry out back curing, 100～150 ℃ of back curing temperatures.
Obtaining the variable frequency microwave stove according to described method with its architectural feature of high-voltage diode is: P type silicon chip and many pieces of identical being stacked together of diode direction, i.e. P matrix+P
+NN
+P
+NN
+P
+NN
++ P matrix.
Variable frequency microwave stove of the present invention high-voltage diode and manufacture method thereof, adopt technologies such as phosphorus boron diffusion, alloy, cutting, assembling, passivation, encapsulation, adopt the method for twice diffusion of liquid phosphorus depth of origin knot diffusion, reduce forward voltage drop, reduce the power consumption of high-voltage diode; Adopt the method for metal platinum diffusion to reduce reverse recovery time, reduce switching loss; Adopt the method that increases chip area, improve the reliability of variable frequency microwave stove with high-voltage diode; Voltage endurance capability, the antisurge ability of variable frequency microwave stove that improved of the present invention with high-voltage diode, switching loss and power consumption have been reduced, improved reliability, evenly regulation and control and not destroyed of the firepower that makes the variable frequency microwave stove have guaranteed the reliability and the useful life of microwave oven.
Description of drawings
Fig. 1 is variable frequency microwave stove high-voltage diode structural representation;
Fig. 2 is variable frequency microwave stove high-voltage diode technological process of production figure.
Among the figure: 1. silver-plated lead-in wire, 2. knot protection glue, 3. plastic packaging material, 4. scolder, 5. silicon chip, 6.P matrix
Embodiment
Variable frequency microwave stove of the present invention as shown in Figure 1 and Figure 2 is as follows with the high-voltage diode manufacturing technology:
(1), structure: the many pieces of identical P that are stacked together of diode direction
+NN
+N
+NP
+, two ends add the P matrix.
(2), technological process:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by multiple working procedures such as acid, alkali, deionized waters.
2) phosphorus boron diffusion: the original silicon chip that cleans up, constant temperature diffusion in 1200～1250 ℃ of diffusion furnaces.
3) diffusion reprocessing:, silicon chip is separated and the removal oxide-film with acid, deionized water ultrasonic cleaning;
4) diffusion check: square resistance, junction depth, the reverse recovery time of test diffusion back silicon chip.
5) platinum diffusion: expand and go into metal platinum, reduce reverse recovery time, improve frequency.
6) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust.
7) nickel plating, gold-plated: with the silicon chip shakeout after the sandblast, cleaning, in special-purpose coating bath, carry out nickel plating, gold-plated, dry.
8) alloy: with the silicon chip after gold-plated, the slicker solder weld tabs, the mould of packing into is in order put in 200～250 ℃ the sintering furnace and is carried out sintered alloy;
9) cut off: the tube core that cuts into required size with the silico briquette of cutting machine after alloy;
10) survey in: with positive test instrument test dies forward voltage drop;
11) corrosion: the tube core after will testing carries out acid corrosion;
12) assembling: the tube core after will corrode, the mould of packing into that goes between, put in 200～250 ℃ the sintering furnace and carry out sintering;
13) clean: the cleaning die of packing into of the tube core after the assembling cleans;
14) passivation protection: after the tube core after will assembling cleans up, be coated with protection glue and curing;
15) encapsulation: the plastic package die of packing into of the tube core after will solidifying encapsulates;
16) solidify the back: the high-voltage diode behind the plastic packaging is put into baking oven carry out back curing, 100～150 ℃ of back curing temperatures
17) test: the device after finishing is solidified in the back, respectively with reverse current testboard, reverse voltage testboard test reverse leakage current, reverse voltage.
Parameter after the process modification:
Peak forward voltage VFM≤14V
Inverse peak current IRM1≤10 μ A
Repetitive peak reverse voltage V
RRM8V
Reverse surge current IRSM 50 mA
Reverse recovery time Trr≤150ns
Avalanche breakdown voltage VBR 〉=8.5V
According to the above description, can realize the solution of the present invention in conjunction with art technology.
Claims (2)
1. a variable frequency microwave stove is characterized in that comprising following steps in order with the production technology of high-voltage diode:
1) diffusion pre-treatment:, silicon chip surface is carried out chemical treatment by multiple working procedures such as acid, alkali, deionized waters;
2) phosphorus boron diffusion: the original silicon chip that cleans up, constant temperature diffusion in 1200～1250 ℃ of diffusion furnaces;
3) diffusion reprocessing:, silicon chip is separated and the removal oxide-film with acid, deionized water ultrasonic cleaning;
4) diffusion check: square resistance, junction depth, the reverse recovery time of test diffusion back silicon chip;
5) platinum diffusion: expand and go into metal platinum, reduce reverse recovery time, improve frequency;
6) sandblast: silicon chip surface is carried out uniform asperitiesization with diamond dust;
7) nickel plating, gold-plated: with the silicon chip shakeout after the sandblast, cleaning, in special-purpose coating bath, carry out nickel plating, gold-plated, drying;
8) alloy: with the silicon chip after the nickel plating, the slicker solder weld tabs, the mould of packing into is in order put in 200～250 ℃ the sintering furnace and is carried out sintered alloy;
9) cut off: the tube core that cuts into required size with the silico briquette of cutting machine after alloy;
10) survey in: with positive test instrument test dies forward voltage drop;
11) corrosion: the tube core after will testing carries out acid corrosion;
12) assembling: the tube core after will corrode, the mould of packing into that goes between, put in 200～250 ℃ the sintering furnace and carry out sintering;
13) clean: the cleaning die of packing into of the tube core after the assembling cleans;
14) passivation protection: after the tube core after will assembling cleans up, be coated with protection glue and curing;
15) encapsulation: the plastic package die of packing into of the tube core after will solidifying encapsulates;
16) solidify the back: the high-voltage diode behind the plastic packaging is put into baking oven carry out back curing, 100～150 ℃ of back curing temperatures.
2. a variable frequency microwave stove high-voltage diode is characterized in that; P type silicon chip and many pieces of identical being stacked together of diode direction, i.e. P matrix+P
+NN
+P
+NN
+P
+NN
++ P matrix, its parameter is:
Peak forward voltage VFM≤14V;
Inverse peak current IRM1≤10 μ A;
Repetitive peak reverse voltage V
RRM8V;
Reverse surge current IRSM 50 mA;
Reverse recovery time Trr≤150ns;
Avalanche breakdown voltage VBR 〉=8.5V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105812498A CN102064107A (en) | 2010-12-10 | 2010-12-10 | High-voltage diode for frequency-variable microwave oven and production process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105812498A CN102064107A (en) | 2010-12-10 | 2010-12-10 | High-voltage diode for frequency-variable microwave oven and production process thereof |
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| Publication Number | Publication Date |
|---|---|
| CN102064107A true CN102064107A (en) | 2011-05-18 |
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ID=43999327
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105812498A Pending CN102064107A (en) | 2010-12-10 | 2010-12-10 | High-voltage diode for frequency-variable microwave oven and production process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102064107A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040049A (en) * | 2015-09-11 | 2015-11-11 | 南通皋鑫电子股份有限公司 | High-voltage diode silicon stack surface electrogilding process |
| CN106057789A (en) * | 2016-07-01 | 2016-10-26 | 天津中环半导体股份有限公司 | SMD high-voltage silicon stack and production process thereof |
| CN109755143A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Silicon wafer alloying process |
| CN110600375A (en) * | 2019-09-16 | 2019-12-20 | 大同新成新材料股份有限公司 | Method for manufacturing semiconductor element |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696130Y (en) * | 2004-05-24 | 2005-04-27 | 王志敏 | High-voltage silicon pile |
| CN201282145Y (en) * | 2008-10-17 | 2009-07-29 | 王志敏 | Novel high voltage diode |
| CN101582456A (en) * | 2009-07-02 | 2009-11-18 | 锦州市双合电器有限公司 | Fast-recovery commutation diode used for high frequency electroplating and production method thereof |
| CN101866854A (en) * | 2010-05-11 | 2010-10-20 | 襄樊三瑞达电力半导体有限公司 | Production method of ultrafast soft recovery diode chip |
-
2010
- 2010-12-10 CN CN2010105812498A patent/CN102064107A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2696130Y (en) * | 2004-05-24 | 2005-04-27 | 王志敏 | High-voltage silicon pile |
| CN201282145Y (en) * | 2008-10-17 | 2009-07-29 | 王志敏 | Novel high voltage diode |
| CN101582456A (en) * | 2009-07-02 | 2009-11-18 | 锦州市双合电器有限公司 | Fast-recovery commutation diode used for high frequency electroplating and production method thereof |
| CN101866854A (en) * | 2010-05-11 | 2010-10-20 | 襄樊三瑞达电力半导体有限公司 | Production method of ultrafast soft recovery diode chip |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105040049A (en) * | 2015-09-11 | 2015-11-11 | 南通皋鑫电子股份有限公司 | High-voltage diode silicon stack surface electrogilding process |
| CN105040049B (en) * | 2015-09-11 | 2018-01-19 | 南通皋鑫电子股份有限公司 | A kind of high-voltage diode silicon folds electroplating surface gold process |
| CN106057789A (en) * | 2016-07-01 | 2016-10-26 | 天津中环半导体股份有限公司 | SMD high-voltage silicon stack and production process thereof |
| CN109755143A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Silicon wafer alloying process |
| CN110600375A (en) * | 2019-09-16 | 2019-12-20 | 大同新成新材料股份有限公司 | Method for manufacturing semiconductor element |
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Application publication date: 20110518 |