CN105040049B - A kind of high-voltage diode silicon folds electroplating surface gold process - Google Patents
A kind of high-voltage diode silicon folds electroplating surface gold process Download PDFInfo
- Publication number
- CN105040049B CN105040049B CN201510576409.2A CN201510576409A CN105040049B CN 105040049 B CN105040049 B CN 105040049B CN 201510576409 A CN201510576409 A CN 201510576409A CN 105040049 B CN105040049 B CN 105040049B
- Authority
- CN
- China
- Prior art keywords
- fixture
- gold
- plating
- bath
- electroplating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Electroplating Methods And Accessories (AREA)
Abstract
The present invention relates to a kind of high-voltage diode silicon to fold electroplating surface gold process.Cleaning agent liquid bath is closed first；Close this plating bath heater power source；Close electroplating source；By special fixture on gold silicon closed assembly to be plated；Degreasing is washed；Pickling；Washing；Preplating：Fixture is placed in preplating liquid bath, electroplates 30s；It is 3.35 ± 0.01V to control electroplating power supply voltage；Washing；This plating：It is 60~65 DEG C to confirm this bath trough liquid temperature, fixture is placed in this coating bath, 2.0 ± 0.5min of this plating, and adjustment electroplating power supply electric current is 0.6 ± 0.1A, and electroplating voltage is indefinite；Post processing；Dehydrate.Advantage is that technique is simply perfect, and the silicon after an alloy is folded to plate a thin layer of layer gold using electric plating method, and alloy wellability is good between gold and slicker solder weld tabs, can effectively improve weld strength after secondary welding；It is homogeneous to electroplate surfacing after gold silicon folds secondary alloy；Assembling sintering qualification rate after gold-plated then reaches 99.2%.
Description
Technical field
The present invention relates to high-voltage diode silicon to fold surface gold-plating field, and in particular to a kind of high-voltage diode silicon folds surface electricity
Craft of gilding.
Background technology
The tube core of high-voltage diode is welded by some chip overlapped in series.Silicon chip after diffusion is by once
Nickel plating, sintering, secondary nickel plating, then carry out silicon chip and lamination is combined with weld tabs, forming silicon after alloy folds.Folding surface in silicon must add
One layer of weld tabs is for the connection between tube core and lead, and here it is secondary alloy.Existing secondary alloy mode is an alloy
The folded two sides of silicon directly respectively adds a piece of secondary weld tabs afterwards, and alloy is carried out subsequently into heating welding is carried out in High-frequency alloy machine.Silicon is folded
Surface is nickel dam, and it is inadequate to fold the secondary weld tabs bond strength in both ends for nickel dam and silicon after secondary alloy, cause in rear road tube core and electrode
Strip-breaking rate is high after lead assembling sintering, while failure welding influences on the reliability of device there is also potential.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of high-voltage diode silicon and folds electroplating surface gold process, to improve
Silicon folds surface and the wetability of secondary weld tabs in secondary alloy, and the weld strength on surface is folded so as to improve secondary weld tabs with silicon.
In order to reach foregoing invention purpose, the present invention proposes following technical scheme：
A kind of high-voltage diode silicon folds electroplating surface gold process, is characterized in particular in following steps：
1) cleaning agent liquid bath is closed, it is 60 ± 5 DEG C that cleaning agent liquid bath liquid temperature is confirmed after constant temperature；
2) this plating bath heater power source is closed, is heated up to corresponding decoction；It is 60~65 DEG C to confirm this bath trough liquid temperature；Close
Close electroplating source；
3) by special fixture on gold silicon closed assembly to be plated；
4) degreasing：It is 60 ± 5 DEG C to confirm cleaning agent liquid bath liquid temperature, and fixture is placed in into 5 ± 1min of immersion in cleaning agent；
5) wash：Fixture is rinsed into 30s in pure water groove, and fixture is constantly swung up and down with hand；
6) pickling：Fixture is soaked into 60 ± 5s in hydrochloric acid trough；
7) wash：Fixture is placed in pure water groove and rinses 30s；
8) preplating：Fixture is placed in preplating liquid bath, electroplates 30s；It is 3.35 ± 0.01V to control electroplating power supply voltage；
9) wash：Fixture is placed in pure water groove and cleans 30s；
10) this plating：It is 60~65 DEG C to confirm this bath trough liquid temperature, and fixture is placed in this coating bath, this plating 2.0 ±
0.5min, adjustment electroplating power supply electric current is 0.6 ± 0.1A, and electroplating voltage is indefinite；
11) post-process：Fixture is transferred in two-stage rinsing bowl successively, every grade of tank cleans 30s；
12) dehydrate：Fixture is transferred to methanol groove, soaks 60s；It is subsequently placed in infrared-ray oven, dries 5min.
Above-mentioned 6) pickling in step, Acidwash solution is hydrochloric acid solution, by HCL：H2O=1：9 ratios prepare 5 liters, 4.5L water
Middle injection hydrochloric acid 500mL.
Described detergent solution is by cleaning agent stoste：H2O=3：100 ratios prepare 13L, weigh cleaning agent stoste
390g, it is placed in 13L water；Stirred with glass bar, until cleaning agent dissolves completely.
Above-mentioned 8) preplating in step, pre- gold plating liquid is by sodium citrate：Citric acid：Potassium auricyanide：H2O=30：5：1：500
Ratio is prepared, and with 15L, i.e., in 15L pure water, adds sodium citrate 900g, citric acid 150g, potassium auricyanide 30g；What is be made into is pre-
Gold plating liquid proportion is 1.02~1.07, and pH value is 5~7.
Above-mentioned 10) this plating in step, this gold plating liquid is by sodium citrate：Citric acid：Potassium auricyanide：H2O=150：100：
42：2500 ratios prepare gold plating liquid 15L, i.e. every liter of pure water adding citric acid sodium 60g, citric acid 40g, potassium auricyanide 16.8g match somebody with somebody
System；The gold plating liquid proportion being made into is 1.04~1.10, and pH value is 4~6.
It is an advantage of the invention that technique is simply perfect, the silicon after an alloy is folded plated using electric plating method it is a thin layer of
Layer gold, gold and slicker solder weld tabs between alloy wellability (being much better than original surface nickel dam) it is good, after secondary welding being effectively improved
Weld strength；Surface weld tabs is also easy to produce nodularization (fusing excessively shows scar) after former silicon folds secondary alloy, and electroplates gold silicon folded two
Surfacing is homogeneous after secondary alloy.Do not plate gold silicon poststack road assembling sintering qualification rate 96.6%, and it is gold-plated after assembling sintering close
Lattice rate then reaches 99.2%.
Embodiment
Implementing process：
First, solution is prepared
1. hydrochloric acid solution
By HCL：H2O=1：9 ratios are prepared 5 liters (hydrochloric acid 500mL is injected in 4.5L water).
2. detergent solution
By cleaning agent stoste：H2O=3：100 ratios prepare 13L (weighing cleaning agent stoste 390g, be placed in 13L water).
Stirred with glass bar, until cleaning agent dissolves completely.
3. pre- gold plating liquid
By sodium citrate：Citric acid：Potassium auricyanide：H2O=30：5：1：500 ratios are prepared, with 15L (i.e. in 15L pure water
In, add sodium citrate 900g, citric acid 150g, potassium auricyanide 30g).The pre- gold-plated liquor ratio weight being made into is 1.02~1.07,
PH value is 5~7.
4. gold plating liquid
By sodium citrate：Citric acid：Potassium auricyanide：H2O=150：100：42：2500 ratios prepare gold plating liquid 15L.(i.e.
Every liter of pure water adding citric acid sodium 60g, citric acid 40g, potassium auricyanide 16.8g are prepared).The gold plating liquid proportion being made into be 1.04~
1.10, pH value is 4~6.
2nd, formal operation
1. closing cleaning agent liquid bath, confirm that cleaning agent liquid bath liquid temperature is (60 ± 5) DEG C after constant temperature.
2. closing this plating bath heater power source, heated up to corresponding decoction.It is (60~65) DEG C to confirm this bath trough liquid temperature.
Close electroplating source.
3. gold silicon to be plated is folded special fixture (being collectively referred to as below " fixture ") is loaded onto (after an alloy).
4. degreasing.Confirm that cleaning agent liquid bath liquid temperature is (60 ± 5) DEG C, fixture is placed in immersion (5 ± 1) min in cleaning agent.
5. washing.Fixture is rinsed into 30s in pure water groove, and fixture is constantly swung up and down with hand.
6. pickling.Fixture is soaked to (60 ± 5) s in hydrochloric acid trough.
7. washing.Fixture is placed in pure water groove and rinses 30s.
8. preplating.Fixture is placed in preplating liquid bath, electroplates 30s.It is (3.35 ± 0.01) V to control electroplating power supply voltage.
9. washing.Fixture is placed in pure water groove and cleans 30s.
A 10. plating.It is (60~65) DEG C to confirm this bath trough liquid temperature, and fixture is placed in this coating bath, this (electricity) plating (2.0
± 0.5) min, adjustment electroplating power supply electric current is (0.6 ± 0.1) A, and electroplating voltage is indefinite.
11. post processing.Fixture is transferred in two-stage rinsing bowl successively, every grade of tank cleans 30s.
12. dehydrate.Fixture is transferred to methanol groove, soaks 60s.It is subsequently placed in infrared-ray oven, dries 5min.
Claims (5)
1. a kind of high-voltage diode silicon folds electroplating surface gold process, it is characterised in that following steps：
1) cleaning agent liquid bath is closed, it is 60 ± 5 DEG C that cleaning agent liquid bath liquid temperature is confirmed after constant temperature；
2) this plating bath heater power source is closed, is heated up to corresponding decoction；It is 60~65 DEG C to confirm this bath trough liquid temperature；Closure electricity
Plating power supply；
3) by special fixture on gold silicon closed assembly to be plated；
4) degreasing：It is 60 ± 5 DEG C to confirm cleaning agent liquid bath liquid temperature, and fixture is placed in into 5 ± 1min of immersion in cleaning agent；
5) wash：Fixture is rinsed into 30s in pure water groove, and fixture is constantly swung up and down with hand；
6) pickling：Fixture is soaked into 60 ± 5s in hydrochloric acid trough；
7) wash：Fixture is placed in pure water groove and rinses 30s；
8) preplating：Fixture is placed in preplating liquid bath, electroplates 30s；It is 3.35 ± 0.01V to control electroplating power supply voltage；
9) wash：Fixture is placed in pure water groove and cleans 30s；
10) this plating：It is 60~65 DEG C to confirm this bath trough liquid temperature, fixture is placed in this coating bath, 2.0 ± 0.5min of this plating, is adjusted
Whole electroplating power supply electric current is 0.6 ± 0.1A, and electroplating voltage is indefinite；
11) post-process：Fixture is transferred in two-stage rinsing bowl successively, every grade of tank cleans 30s；
12) dehydrate：Fixture is transferred to methanol groove, soaks 60s；It is subsequently placed in infrared-ray oven, dries 5min.
2. a kind of high-voltage diode silicon according to claim 1 folds electroplating surface gold process, it is characterized in that the above-mentioned the 6) step
Middle pickling, Acidwash solution are hydrochloric acid solutions, by volume HCl：H2O=1：9 ratios prepare 5L, inject hydrochloric acid in 4.5L water
500mL。
3. a kind of high-voltage diode silicon according to claim 1 folds electroplating surface gold process, it is characterized in that described cleaning
Agent solution is by cleaning agent stoste：H2O=3：100 ratios prepare 13L, weigh cleaning agent stoste 390g, are placed in 13L water；
Stirred with glass bar, until cleaning agent dissolves completely.
4. a kind of high-voltage diode silicon according to claim 1 folds electroplating surface gold process, it is characterized in that the above-mentioned the 8) step
Middle preplating, pre- gold plating liquid are by sodium citrate：Citric acid：Potassium auricyanide：H2O=30：5：1：500 ratios are prepared, with 15L, i.e.,
In 15L pure water, sodium citrate 900g, citric acid 150g, potassium auricyanide 30g are added；The pre- gold-plated liquor ratio weight being made into is 1.02
~1.07, pH value is 5~7.
5. a kind of high-voltage diode silicon according to claim 1 folds electroplating surface gold process, it is characterized in that the above-mentioned the 10) step
Middle plating, this gold plating liquid is by sodium citrate：Citric acid：Potassium auricyanide：H2O=150：100：42：2500 ratios are prepared gold-plated
Liquid 15L, i.e. every liter of pure water adding citric acid sodium 60g, citric acid 40g, potassium auricyanide 16.8g are prepared；The gold plating liquid proportion being made into is
1.04~1.10, pH value is 4~6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510576409.2A CN105040049B (en) | 2015-09-11 | 2015-09-11 | A kind of high-voltage diode silicon folds electroplating surface gold process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510576409.2A CN105040049B (en) | 2015-09-11 | 2015-09-11 | A kind of high-voltage diode silicon folds electroplating surface gold process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105040049A CN105040049A (en) | 2015-11-11 |
| CN105040049B true CN105040049B (en) | 2018-01-19 |
Family
ID=54447011
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510576409.2A Active CN105040049B (en) | 2015-09-11 | 2015-09-11 | A kind of high-voltage diode silicon folds electroplating surface gold process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105040049B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106937491A (en) * | 2017-04-05 | 2017-07-07 | 广东浪潮大数据研究有限公司 | One kind is based on pcb board card gold finger galvanizing nickel and plating gold process and its application |
| CN107180776B (en) * | 2017-05-16 | 2020-04-07 | 重庆达标电子科技有限公司 | Diode heating and cleaning device |
| CN109755143A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | Silicon wafer alloying process |
| CN112030207A (en) * | 2020-08-04 | 2020-12-04 | 南通皋鑫电子股份有限公司 | High-voltage diode post-alloy silicon-on-gold electroplating process |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3635332A1 (en) * | 1986-10-17 | 1988-04-28 | Philips Patentverwaltung | Method of fabricating a photovoltaic cell |
| JPS63187656A (en) * | 1987-01-30 | 1988-08-03 | Furukawa Electric Co Ltd:The | Semiconductor device |
| CN1508853A (en) * | 2002-12-18 | 2004-06-30 | 中国科学院半导体研究所 | High-frequency schottky diode electrochemical preparation method |
| CN1588625A (en) * | 2004-10-09 | 2005-03-02 | 苏州固锝电子股份有限公司 | Method for producing semiconductor diode electrode |
| CN1833881A (en) * | 2006-04-13 | 2006-09-20 | 成都天和银楼有限责任公司 | Prodn. technique of hollowed-out plane thin sheet metallic handicraft |
| CN101621003A (en) * | 2009-08-13 | 2010-01-06 | 王志敏 | Novel production process of high-pressure diode |
| CN102064107A (en) * | 2010-12-10 | 2011-05-18 | 天津中环半导体股份有限公司 | High-voltage diode for frequency-variable microwave oven and production process thereof |
| CN102945810A (en) * | 2012-10-17 | 2013-02-27 | 如皋市大昌电子有限公司 | Alloying technology for high voltage diode chip |
| CN203150557U (en) * | 2013-03-28 | 2013-08-21 | 上海瞬雷电子科技有限公司 | Reverse direction GPP high voltage diode chip in automobile module group |
| CN104078353A (en) * | 2013-03-28 | 2014-10-01 | 上海瞬雷电子科技有限公司 | Backward GPP (Glass Passivation Pellet) high voltage diode chip in automobile module, and production technology |
-
2015
- 2015-09-11 CN CN201510576409.2A patent/CN105040049B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3635332A1 (en) * | 1986-10-17 | 1988-04-28 | Philips Patentverwaltung | Method of fabricating a photovoltaic cell |
| JPS63187656A (en) * | 1987-01-30 | 1988-08-03 | Furukawa Electric Co Ltd:The | Semiconductor device |
| CN1508853A (en) * | 2002-12-18 | 2004-06-30 | 中国科学院半导体研究所 | High-frequency schottky diode electrochemical preparation method |
| CN1588625A (en) * | 2004-10-09 | 2005-03-02 | 苏州固锝电子股份有限公司 | Method for producing semiconductor diode electrode |
| CN1833881A (en) * | 2006-04-13 | 2006-09-20 | 成都天和银楼有限责任公司 | Prodn. technique of hollowed-out plane thin sheet metallic handicraft |
| CN101621003A (en) * | 2009-08-13 | 2010-01-06 | 王志敏 | Novel production process of high-pressure diode |
| CN102064107A (en) * | 2010-12-10 | 2011-05-18 | 天津中环半导体股份有限公司 | High-voltage diode for frequency-variable microwave oven and production process thereof |
| CN102945810A (en) * | 2012-10-17 | 2013-02-27 | 如皋市大昌电子有限公司 | Alloying technology for high voltage diode chip |
| CN203150557U (en) * | 2013-03-28 | 2013-08-21 | 上海瞬雷电子科技有限公司 | Reverse direction GPP high voltage diode chip in automobile module group |
| CN104078353A (en) * | 2013-03-28 | 2014-10-01 | 上海瞬雷电子科技有限公司 | Backward GPP (Glass Passivation Pellet) high voltage diode chip in automobile module, and production technology |
Non-Patent Citations (1)
| Title |
|---|
| 镀金用微型超声波发生器的研制和应用;张勇强等;《机电元件》;19940430;第14卷(第2期);第15-17页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105040049A (en) | 2015-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105040049B (en) | A kind of high-voltage diode silicon folds electroplating surface gold process | |
| CN106119915B (en) | The electro-plating method of lead frame | |
| CN109280946A (en) | A kind of folded electroplating surface gold process of high-voltage diode silicon | |
| CN109722689B (en) | Method for controlling uniformity of copper plating layer of narrow and deep groove of aluminum alloy flange plate | |
| CN103352240B (en) | The eleetrotinplate technique of SMD automobile electronics | |
| CN108251872A (en) | A kind of Sintered NdFeB magnet composite plating method | |
| CN102922098A (en) | Method for welding thick aluminum alloy plate | |
| CN104900536B (en) | A kind of surface treatment method of semiconductor lead frame | |
| US7833403B2 (en) | Plating, chemical plating technique using partial chemical oxidation for aluminum or aluminum copper radiator | |
| CN103361687A (en) | Electrotinning processing technology of SMD automobile electronic components | |
| CN104416307A (en) | Heating plate for welding bench, manufacturing method of welding bench and welding bench | |
| CN106270878A (en) | The magnesium titanium laser welding-brazing of a kind of nickel coating auxiliary connects method | |
| CN107946201B (en) | Preparation method of lead bonding welding spot structure based on local electrodeposition | |
| CN106521587A (en) | Nickel plating method for stainless steel strips | |
| CN105900181A (en) | System for insulating high current busbars | |
| CN110611236B (en) | Vulcanization process for connecting copper bar in bus duct | |
| CN105648493A (en) | Preprocessing method for copper and copper alloy brazing parts before silver plating | |
| CN105970264A (en) | Electroplating liquid for cylinder outside-tank electroplating | |
| CN109537010B (en) | Process for cyanide-free gold plating after nickel plating and bottoming of electronic component parts | |
| CN106271466A (en) | Nuclear power half speed steam turbine generator outlet terminal welding method | |
| CN110144607A (en) | A kind of preparation method of the anti-deformation Ni―Ti anode of hydrometallurgy | |
| CN205188464U (en) | Supersaturation brazing filler metal plating increases material device | |
| KR20110083147A (en) | Black metal plating method using the same for copper plate with low emissivity and high absorption of solar energy | |
| WO2009152640A1 (en) | Method for repairing the polar terminal of a lead-acid battery | |
| CN102324270A (en) | Weldless lead-free ribbon/bus bar for photovoltaic modules and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210902 Address after: 226503 No. 82, Zhongshan West Road, Rucheng street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Gaoxin Electronics Co.,Ltd. Address before: 226500 No.82, Zhongshan West Road, Rucheng, Rugao, Nantong, Jiangsu Province Patentee before: NANTONG GAOXIN ELECTRONICS Co.,Ltd. |
|
| TR01 | Transfer of patent right |