CN106356294A - Manufacturing method of electrode on back surface of power device and structure of electrode - Google Patents
Manufacturing method of electrode on back surface of power device and structure of electrode Download PDFInfo
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- CN106356294A CN106356294A CN201510416862.7A CN201510416862A CN106356294A CN 106356294 A CN106356294 A CN 106356294A CN 201510416862 A CN201510416862 A CN 201510416862A CN 106356294 A CN106356294 A CN 106356294A
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- layer
- metal layer
- silicon chip
- aluminium lamination
- titanium coating
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 96
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 82
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 239000002184 metal Substances 0.000 claims abstract description 75
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 59
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000010936 titanium Substances 0.000 claims abstract description 58
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 58
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000010703 silicon Substances 0.000 claims abstract description 52
- 238000000137 annealing Methods 0.000 claims abstract description 47
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000011248 coating agent Substances 0.000 claims description 52
- 238000000576 coating method Methods 0.000 claims description 52
- 239000004411 aluminium Substances 0.000 claims description 39
- 238000003475 lamination Methods 0.000 claims description 38
- 239000007789 gas Substances 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 22
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 13
- 229910052739 hydrogen Inorganic materials 0.000 claims description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 11
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 150000002835 noble gases Chemical class 0.000 claims description 4
- PQTCMBYFWMFIGM-UHFFFAOYSA-N gold silver Chemical compound [Ag].[Au] PQTCMBYFWMFIGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000008246 gaseous mixture Substances 0.000 claims 2
- 230000008569 process Effects 0.000 abstract description 11
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 230000004888 barrier function Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000000630 rising effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000002253 acid Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention discloses a manufacturing method of an electrode on a back surface of a power device and a structure of the electrode. The method comprises the following steps: preparing a thin aluminum layer on a silicon wafer; carrying out thermal annealing on the thin aluminum layer in mixed gas to form a silicon-aluminum alloy layer; successively preparing a titanium metal layer, a nickel metal layer and a silver metal layer on the silicon-aluminum alloy layer; and carrying out thermal annealing on the titanium metal layer, the nickel metal layer and the silver metal layer to form a metal interconnection layer. Aluminum thorns in a manufacturing process of aluminum metal can be avoided, contact resistance of the device is reduced under the condition that process difficulty and generation costs are not increased, and reliability of the device is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly, to a kind of power device backplate manufacture method and
Its structure.
Background technology
In the manufacture process of semiconductor device, need to prepare metal electrode in the input of electric current, output area,
With potted ends carry out metal interconnection, to form conductive path.The formation of metal electrode is as semiconductor manufacturing
One of key process technology, directly influence the conducting resistance of device, forward voltage drop, switch time etc.
Important performance indexes.Metal electrode is also very big to the reliability effect of device.Aluminum be in semiconductor technology
Conventional metal electrode material, it can by redox reaction remove silicon face natural oxide and
Other pollutants, thus forming good Ohmic contact with silicon, the compatibility with packaging technology is good, manufactures
Low cost and other advantages.Response speed yet with aluminum and silicon surface oxidation thing is uneven, direct silicon chip
Upper manufacture aluminum metal electrode may produce metal protuberance, aluminum thorn, impact device performance and reliability.
Additionally, needing to carry out high annealing to form the formation of Ohmic contact, in annealing process, aluminium surface can go out
Existing oxidative phenomena, further increases contact resistance.
In sum, need a kind of manufacture method of power device backplate badly, in order to solve in prior art
The problem existing.
Content of the invention
The embodiment of the present invention provides a kind of power device backplate manufacture method and its structure, existing in order to solve
With the presence of make in technology during metal electrode because aluminum thorn impact the asking of power device Performance And Reliability occurs
Topic.
To achieve these goals, the embodiment of the present invention provides a kind of power device backplate manufacture method,
The method includes:
Thin layer aluminium lamination is prepared on silicon chip；
Described thin layer aluminium lamination is carried out thermal annealing under mixed gas, reacts formation sial completely with described silicon chip
Alloy-layer, described mixed gas are hydrogen and noble gases；
Described silico-aluminum layer is sequentially prepared titanium coating, nickel metal layer and silver metal layer；
Described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing, forms metal interconnection layer.
It is preferred that described prepare thin layer aluminium lamination on silicon chip before, also include:
Described silicon chip surface is cleaned by wet etching and/or dry etching.
It is preferred that thin layer aluminium lamination is prepared on silicon chip, comprising:
Thin layer aluminium lamination is sputtered on described silicon chip surface by sputtering method.
It is preferred that described carry out thermal annealing by described thin layer aluminium lamination under mixed gas, comprising:
It is rapidly heated with fast cooling to described thin layer aluminium lamination using stage, carry out under mixed gas are surrounded
The high temperature anneal.
It is preferred that described mixed gas are nitrogen, hydrogen mixed gas；
Described nitrogen, the volume ratio of hydrogen mixed gas are 100:1 to 1:1.
It is preferred that the described annealing temperature that described thin layer aluminium lamination is carried out thermal annealing is less than 450 DEG C.
It is preferred that the thickness of described titanium coating is 50 to 100 angstroms, the thickness of described nickel metal layer is 50
Thickness to 200 angstroms, described silver metal layer is 10000 to 20000 angstroms.
It is preferred that the described annealing temperature that described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing
Spend for 150 DEG C to 300 DEG C, annealing time is 5min to 60min.
It is preferred that the thickness of described thin layer aluminium lamination is less than 2000 angstroms.
Correspondingly, the embodiment of the present invention additionally provides a kind of power device back electrode structure, comprising:
Silicon chip, silico-aluminum layer, metal interconnection layer；
Described silico-aluminum layer is located between described silicon chip and described metal interconnection layer；
Described metal interconnection layer includes titanium coating, nickel metal layer and silver metal layer, described titanium coating and institute
State the contact of silico-aluminum layer and form Ohmic contact, described nickel metal layer is located at described titanium coating and described silver gold
Belong between layer
In above-described embodiment, by aluminium lamination is prepared on silicon chip；Described aluminium lamination is carried out under mixed gas heat
Annealing, forms silico-aluminum layer；Then titanium coating, nickel metal are sequentially prepared on described silico-aluminum layer
Layer and silver metal layer；Described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing, forms metal
Interconnection layer.Described titanium coating can be used to form Ohmic contact with silico-aluminum layer, and described nickel metal layer is made
It is used for isolating described titanium coating and silver metal layer for barrier layer, after preventing silver metal layer from contacting with titanium coating
Occur rising and falling or burr, the reliability of impact device, described silver metal layer is used for welding lead.The present invention is real
Apply the phenomenon that example can avoid aluminum thorn in manufacturing process in aluminum metal, do not increase technology difficulty and life
In the case of becoming cost, reduce the contact resistance of device, improve the reliability of device.
Brief description
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, below will be to institute in embodiment description
Need the accompanying drawing using to briefly introduce it should be apparent that, drawings in the following description are only the present invention
Some embodiments, for those of ordinary skill in the art, in the premise not paying creative labor
Under, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is a kind of schematic flow sheet of power device backplate manufacture method in the embodiment of the present invention；
In Fig. 2 a to Fig. 2 c embodiment of the present invention, a kind of flow process of power device backplate manufacture method is illustrated
Figure；
Fig. 3 is the schematic flow sheet of another kind of power device backplate manufacture method in the embodiment of the present invention.
Specific embodiment
In order that the object, technical solutions and advantages of the present invention are clearer, below in conjunction with accompanying drawing to this
Bright be described in further detail it is clear that described embodiment is only present invention some embodiments,
Rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not doing
The all other embodiment being obtained under the premise of going out creative work, broadly falls into the scope of protection of the invention.
In order to improve the reliability of power device, Fig. 1 shows a kind of power device backplate manufacture method
Flow process, this flow process can be used to make the backplate of power device.As shown in figure 1, this flow process is concrete
Step includes:
Step s101, prepares thin layer aluminium lamination on silicon chip.
In addition it is also necessary to cleaning is performed etching to the surface of silicon chip before described step s101, wash silicon chip table
The natural oxide in face, can be using dry etching, wet etching or the method pair using both combinations
The surface of silicon chip is carried out.After having cleaned, prepare a thin layer aluminium lamination, thin layer of aluminum on the surface of silicon chip
Layer can react generation silico-aluminum completely with silicon.In being embodied as, the thickness of this thin layer aluminium lamination is less than 2000
Angstrom.In this thickness range, aluminium lamination and silicon can be completely reacted to silico-aluminum layer, do not interfere with gold thereafter
Belong to the preparation of interconnection layer, follow-up packaging technology is not also affected moreover it is possible to improve the reliability of electrode.
Step s102, described thin layer aluminium lamination is carried out thermal annealing under mixed gas, completely anti-with described silicon chip
Silico-aluminum layer should be formed.
In described step s101, the thin layer aluminium lamination of preparation, carries out heat in the case that high temperature is passed through mixed gas
Annealing, then forms silico-aluminum layer, and this mixed gas can be nitrogen, hydrogen mixed gas or hydrogen
Gas and the mixing of other noble gases, the mixed proportion of hydrogen and nitrogen or noble gases can for 1:1 extremely
1:100, the annealing temperature carrying out thermal annealing can be less than 450 DEG C.The embodiment of the present invention is only example effect,
Without limitation.
Step s103, is sequentially prepared titanium coating, nickel metal layer and silver metal layer on described silico-aluminum layer.
After having made silico-aluminum layer, on described silico-aluminum layer, make titanium coating, nickel successively
Metal level and silver metal layer.Described titanium coating is used for forming Ohmic contact, described nickel with silico-aluminum layer
Metal level is used for isolating described titanium coating and silver metal layer as barrier layer, prevents silver metal layer and titanium
Occur rising and falling or burr after layer contact, the reliability of impact device, described silver metal layer is used for welding lead.
Step s104, described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing, form metal
Interconnection layer.
In addition it is also necessary in the case of a high temperature to institute after being prepared for titanium coating, nickel metal layer and silver metal layer
State titanium coating, nickel metal layer and silver metal layer and carry out thermal annealing, form metal interconnection layer, with strengthen silicon with
Silico-aluminum layer, silico-aluminum layer and titanium coating, titanium coating and nickel metal layer, nickel metal layer and silver gold
Belong to the adhesion of layer, be so far fabricated to metal electrode.Annealing temperature when carrying out thermal annealing can be 150 DEG C
To 300 DEG C, annealing time can be 5min to 60min.In silico-aluminum layer and titanium coating interface shape
Become Ohmic contact, significantly reduce contact resistance, the metal interconnection layer on silico-aluminum layer is prevented from simultaneously
Aluminum aoxidizes.
Above-described embodiment shows, by preparing aluminium lamination on silicon chip；Described aluminium lamination is carried out under mixed gas
Thermal annealing, forms silico-aluminum layer；Then titanium coating, nickel gold are sequentially prepared on described silico-aluminum layer
Belong to layer and silver metal layer；Described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing, forms gold
Belong to interconnection layer.The phenomenon that aluminum thorn occurs in manufacturing process can be avoided in aluminum metal, in silico-aluminum layer and
Titanium coating interface forms Ohmic contact, significantly reduces contact resistance, simultaneously the gold on silico-aluminum layer
Genus interconnection layer is prevented from aluminum and aoxidizes.In the case of not increasing technology difficulty and manufacturing cost, reduce
The contact resistance of device, improves the reliability of device.
Explain the present invention in order to be able to more preferable, as shown in Fig. 2 a to Fig. 2 c, embodiments provide one kind
The manufacture method of power device backplate, comprising:
As shown in Figure 2 a, the silicon chip 1 after dry etching prepares thin layer aluminium lamination 2, this thin layer aluminium lamination
2 thickness is less than 2000 angstroms.
As shown in Figure 2 b, it is passed through nitrogen, hydrogen mixed gas in high temperature furnace pipe, to being prepared for thin layer aluminium lamination 2
Silicon chip 1 carries out thermal annealing so that thin layer aluminium lamination 2 all reacts with silicon forms silico-aluminum layer 3, herein
Carry out thermal annealing annealing temperature be 400 DEG C or 350 DEG C, 300 DEG C, 250 DEG C, 200 DEG C, 150 DEG C,
100 DEG C, 50 DEG C of equitemperatures, can carry out selecting the temperature less than 450 DEG C according to actual scene.Nitrogen, hydrogen mix
The volume mixture ratio closing gas is 50:1, can prevent aluminum from aoxidizing.
As shown in Figure 2 c, titanium coating 4, nickel metal layer 5 and Yin Jin are sequentially prepared on silico-aluminum layer 3
Belong to layer 6, then in high temperature furnace pipe, carry out thermal annealing so that titanium coating 4, nickel metal layer 5 and silver metal
Layer 6 formation metal interconnection layers, with strengthen silicon and silico-aluminum layer 3, silico-aluminum layer 3 and titanium coating 4,
Titanium coating 4 and nickel metal layer 5, nickel metal layer 5 and the adhesion of silver metal layer 6, are so far fabricated to metal
Electrode.Wherein, described titanium coating 4 is used for forming Ohmic contact, described nickel metal with silico-aluminum layer 3
Layer 5 is used for isolating described titanium coating 4 and silver metal layer 6 as barrier layer, prevents silver metal layer 6 and titanium
Occur rising and falling or burr after belonging to layer 4 contact, the reliability of impact device, described silver metal layer 6 is used for welding
Wire.Annealing temperature when carrying out thermal annealing can be 150 DEG C to 300 DEG C, and annealing time can be 5min
To 60min.
Based on identical inventive concept, Fig. 3 illustrates a kind of flow process of the manufacture method of power device backplate,
This flow process can be used for preparing power device back electrode structure, as shown in figure 3, this flow process concrete steps bag
Include:
Step s301, the surface of cleaning silicon wafer.
First, using Fluohydric acid. corrosive liquid, the surface of silicon chip is carried out with corrosion cleaning, wash silicon chip surface
Natural oxide.Then, using the surface of the silicon chip after this corrosion of plasma etching.Finally, using salt
Acid is carried out to the surface of silicon chip again, and cleaning produces after Fluohydric acid. corrosive liquid is reacted with natural oxide
Compound and polymer.Adopt wet etching, dry etching, then the step of wet etching is to silicon chip
Surface is cleaned.
Step s302, on the surface of the silicon chip of cleaning, prepares thin layer aluminium lamination.
On surface using the silicon chip in cleaning for the sputtering method, deposit a thin layer aluminium lamination, sputtering technology is steamed with vacuum
The technology of sending out is compared, and the adhesive force of sputtered film and thin film covering performance are all substantially better than evaporation technique, therefore,
Using sputtering method, sputtered atom energy is about 10ev, enables to sputtered aluminum layer and is more easy to be combined with silicon chip,
There is good adhesion property.Silicon chip after cleaning is placed on the vacuum interior of sputtering unit, the metal of sputtering
For aluminum, the sputtering thickness of this thin layer aluminium lamination is 800 angstroms.
Step s303, carries out thermal annealing to thin layer aluminium lamination, forms silico-aluminum layer.
The thin layer aluminium lamination of deposit is placed in annealing furnace, is moved back using under hydrogen, the atmosphere of nitrogen mixture gas
Fire, is passed through hydrogen, the flow of nitrogen mixture gas is 2.5l/min, hydrogen, the ratio of nitrogen mixture gas are 1:10,
In the case that temperature is 400 DEG C, carry out the stage method being rapidly heated with fast cooling, to this thin layer of aluminum
Layer is made annealing treatment.Thin layer aluminium lamination and silicon chip are reacted, forms silico-aluminum layer.
Step s304, on silico-aluminum layer, is sequentially prepared titanium coating, nickel metal layer and silver metal layer.
The silicon chip with silico-aluminum layer is placed on the vacuum interior of sputtering unit, the metal of sputtering first is titanium,
The thickness of sputtering is 50 angstroms to 100 angstroms, and the metal then sputtering is nickel, and the thickness of sputtering is 50 angstroms to 200
Angstrom, the metal finally sputtering is silver, and the thickness of sputtering is 10000 angstroms to 20000 angstroms.Wherein, titanium
Layer be used for and silico-aluminum layer formed Ohmic contact, nickel metal layer as barrier layer be used for isolate titanium coating and
Rising and falling or burr, occurs after preventing silver metal layer from contacting with titanium coating in silver metal layer, the reliability of impact device
Property, silver metal layer is used for welding lead.
Step s305, carries out thermal annealing to titanium coating, nickel metal layer and silver metal layer, forms metal interconnection
Layer.
After deposit titanium coating, nickel metal layer and silver metal layer, have titanium coating, nickel metal layer and
The silicon chip of silver metal layer is placed in the lehr, using the stage method being rapidly heated with fast cooling, right
Titanium coating, nickel metal layer and silver metal layer are made annealing treatment.The time of annealing is 50min.The temperature of annealing
Spend for 250 DEG C.So far, form metal interconnection layer, backplate completes.Wherein, titanium coating and silicon
Aluminium alloy layer forms Ohmic contact, and during high annealing, the Schottky contacts of silicon chip back side are changed into
Ohmic contact.
The embodiment of the present invention additionally provides a kind of power device back electrode structure, as shown in Figure 2 c, this structure
Including: silicon chip 1, silico-aluminum layer 3, metal interconnection layer；Described silico-aluminum layer 3 is located at described silicon chip 1
And described metal interconnection layer between；Described metal interconnection layer includes titanium coating 4, nickel metal layer 5 and silver metal
Layer 6, described titanium coating 4 contacts formation Ohmic contact, described nickel metal layer 5 with described silico-aluminum layer 3
Positioned between described titanium coating 4 and described silver metal layer 6.Described titanium coating 4 is used for and silico-aluminum
Layer 3 formation Ohmic contact, described nickel metal layer 5 is used for isolating described titanium coating 4 and silver as barrier layer
Metal level 6, after preventing silver metal layer 6 from contacting with titanium coating 4 occur rise and fall or burr, impact device can
By property, described silver metal layer 6 is used for welding lead.
Although preferred embodiments of the present invention have been described, but those skilled in the art once know base
This creative concept, then can make other change and modification to these embodiments.So, appended right will
Ask and be intended to be construed to including preferred embodiment and fall into being had altered and changing of the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these modification and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprise these changes and modification.
Claims (10)
1. a kind of power device backplate manufacture method is it is characterised in that include:
Thin layer aluminium lamination is prepared on silicon chip；
Described thin layer aluminium lamination is carried out thermal annealing under mixed gas, reacts formation sial completely with described silicon chip
Alloy-layer, described mixed gas are hydrogen and noble gases；
Described silico-aluminum layer is sequentially prepared titanium coating, nickel metal layer and silver metal layer；
Described titanium coating, nickel metal layer and silver metal layer are carried out thermal annealing, forms metal interconnection layer.
2. the method for claim 1 is it is characterised in that prepare thin layer aluminium lamination described on silicon chip
Before, also include:
Described silicon chip surface is cleaned by wet etching and/or dry etching.
3. the method for claim 1 is it is characterised in that prepare thin layer aluminium lamination on silicon chip, comprising:
Thin layer aluminium lamination is sputtered on described silicon chip surface by sputtering method.
4. the method for claim 1 it is characterised in that described by described thin layer aluminium lamination in gaseous mixture
Carry out thermal annealing under body, comprising:
It is rapidly heated with fast cooling to described thin layer aluminium lamination using stage, carry out under mixed gas are surrounded
The high temperature anneal.
5. method as claimed in claim 4 is it is characterised in that described mixed gas are nitrogen, hydrogen gaseous mixture
Body；
Described nitrogen, the volume ratio of hydrogen mixed gas are 100:1 to 1:1.
6. method as claimed in claim 4 is it is characterised in that described carry out heat by described thin layer aluminium lamination and move back
The annealing temperature of fire is less than 450 DEG C.
7. the method for claim 1 it is characterised in that described titanium coating thickness be 50 to
100 angstroms, the thickness of described nickel metal layer is 50 to 200 angstroms, the thickness of described silver metal layer be 10000 to
20000 angstroms.
8. the method for claim 1 it is characterised in that described by described titanium coating, nickel metal
The annealing temperature that layer and silver metal layer carry out thermal annealing is 150 DEG C to 300 DEG C, and annealing time is for 5min extremely
60min.
9. the method as described in any one of claim 1 to 8 is it is characterised in that the thickness of described thin layer aluminium lamination
Degree is less than 2000 angstroms.
10. a kind of power device back electrode structure is it is characterised in that include:
Silicon chip, silico-aluminum layer, metal interconnection layer；
Described silico-aluminum layer is located between described silicon chip and described metal interconnection layer；
Described metal interconnection layer includes titanium coating, nickel metal layer and silver metal layer, described titanium coating and institute
State the contact of silico-aluminum layer and form Ohmic contact, described nickel metal layer is located at described titanium coating and described silver gold
Belong between layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510416862.7A CN106356294A (en) | 2015-07-15 | 2015-07-15 | Manufacturing method of electrode on back surface of power device and structure of electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510416862.7A CN106356294A (en) | 2015-07-15 | 2015-07-15 | Manufacturing method of electrode on back surface of power device and structure of electrode |
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| Publication Number | Publication Date |
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| CN106356294A true CN106356294A (en) | 2017-01-25 |
Family
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Family Applications (1)
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| CN201510416862.7A Pending CN106356294A (en) | 2015-07-15 | 2015-07-15 | Manufacturing method of electrode on back surface of power device and structure of electrode |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107331606A (en) * | 2017-05-09 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | The preparation method of SiC device back metal system |
| CN108624844A (en) * | 2017-03-17 | 2018-10-09 | 株洲中车时代电气股份有限公司 | A kind of wafer rear metallic film and preparation method thereof |
| CN111969071A (en) * | 2020-08-25 | 2020-11-20 | 常州时创能源股份有限公司 | Metallization method and solar cell |
| CN117116786A (en) * | 2023-10-20 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Preparation method of back metallization of IGBT (insulated Gate Bipolar transistor) wafer |
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| CN108624844A (en) * | 2017-03-17 | 2018-10-09 | 株洲中车时代电气股份有限公司 | A kind of wafer rear metallic film and preparation method thereof |
| CN108624844B (en) * | 2017-03-17 | 2019-11-12 | 株洲中车时代电气股份有限公司 | A kind of backside of wafer metallic film and preparation method thereof |
| CN107331606A (en) * | 2017-05-09 | 2017-11-07 | 中国电子科技集团公司第五十五研究所 | The preparation method of SiC device back metal system |
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| CN117116786A (en) * | 2023-10-20 | 2023-11-24 | 粤芯半导体技术股份有限公司 | Preparation method of back metallization of IGBT (insulated Gate Bipolar transistor) wafer |
| CN117116786B (en) * | 2023-10-20 | 2024-03-01 | 粤芯半导体技术股份有限公司 | Preparation method of back metallization of IGBT (insulated Gate Bipolar transistor) wafer |
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