CN101582455A - Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof - Google Patents
Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof Download PDFInfo
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- CN101582455A CN101582455A CNA2009103039515A CN200910303951A CN101582455A CN 101582455 A CN101582455 A CN 101582455A CN A2009103039515 A CNA2009103039515 A CN A2009103039515A CN 200910303951 A CN200910303951 A CN 200910303951A CN 101582455 A CN101582455 A CN 101582455A
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Abstract
The invention relates to an avalanche commutation diode special for a 16000A/200-400V welding machine and a preparation method thereof. The invention solves the problems that an avalanche commutation diode special for a single welding machine has small capacity and that parallel connection and flow equalization are needed during the use of the avalanche commutation diode. An N-type (100) radial single crystal silicon piece, which has specific resistance Rho n of 5-10 Ohm-cm, diameter of 70 mm and thickness of 0.17-0.19 mm, is adopted; at the temperature of 1250 DEG C, double-surface once diffusion is carried out; the surface concentration of a surface higher-concentration region of a diffusion region is 0.06-n A, a junction depth X jP is 58-62 microns, and residual minority carrier lifetime Tao p of a base region is 9-13 Mu S; cathode-anode titanium-nickel-gold undergoes ohmic contact; a cathode table surface undergoes spray sand molding, corrosion, cleaning, passivation protection and intermediate test; and a shell is arranged, the thickness of a pipe is 5-6 mm, cold pressure welding packaging is conducted under the protection of nitrogen gas, and the thickness of the pipe is 5-6 mm after the packaging. The avalanche commutation diode has stronger current expansion capability, larger capacity, better quality, higher reliability and lower use cost.
Description
Technical field
The present invention relates to a kind of power semiconductor, particularly a kind of 16000A/200～400V electric welding machine avalanche commutation diode special and manufacture method thereof.
Background technology
At present, welding machine is with the main external silicon chip diameter of phi 63mm/13500A/200～400V rectifier diode produced of rectifier diode and the silicon chip diameter of phi 48mm/7000A/200～400V rectifier diode of domestic production.Their manufacture method is carried out two-sided diffusion earlier for adopting radially low-resistance monocrystalline of N type (111), grinds off one side then, carries out a single face diffusion again.Increase distortion with the silicon chip diameter is more and more serious, not only the silicon chip diameter at the worst, and thickness more can not approach, 63mm, diameter 0.21mm thickness, 13500A capacity have belonged to very and being not easy, as thicker by the attenuate sheet, increase diameter and promote current capacity, will cause rate of finished products low.
Since welding machine power supply immediate current several ten thousand ~ hundreds of thousands ampere, in addition bigger, and the rectifying device in the welding machine adopts many (as six or eight) rectifier diode parallel connections, the use cost height, whenever CURRENT DISTRIBUTION inequality by all means easily causes damaged tubular, adopts the current-sharing measure that cost is increased.
Summary of the invention
The contradiction that the objective of the invention is to solve that existing single electric welding machine special rectifier diode capacity is little, device needs parallel current-sharing in using, on the basis of original 13500A/200～400V welding machine special rectifier diode, provide that a kind of current expansion ability is stronger, capacity is bigger, better quality, reliability be higher, the 16000A/200 that use cost is lower～400V electric welding machine avalanche commutation diode special and manufacture method thereof.
Technical solution of the present invention is:
This 16000A/200～400V electric welding machine avalanche commutation diode special is to be made of shell, chip, and described chip comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact, its special character is: described chip adopts radially low-resistance monocrystalline silicon piece of N type (100), described monocrystalline silicon piece electricalresistivity n is that 5～10 Ω-cm, diameter are 70mm, thickness 0.17～0.19mm, and pipe thickness is 5～6mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, the cathode and anode ohmic contact is titanium-nickel-Jin or titanium-nickel-Yin.
The manufacture method of this electric welding machine avalanche commutation diode special is:
Adopting electricalresistivity n is that 5～10 Ω-cm, diameter are N type (100) the low-resistance monocrystalline silicon piece radially of 70mm, thickness 0.17～0.19mm;
Two-sided once diffusion is carried out in the silicon chip diffusion under 1250 ℃;
Diffusion sheet detects, P
+District surface concentration 0.04～0.06mV/mA, junction depth X
JPBe 78～82) μ m; N
+District surface concentration 0.06～0.08mV/mA, junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 9～13 μ S;
Diffusion sheet carries out the evaporation of electron beam multilevel metallization behind sandblast, cleaning, dewatered drying, realize cathode and anode titanium-nickel-Jin ohmic contact; Table surface undergoes spray sand molding, after burn into cleaning, polyimide passivation protection, middle test;
With middle test passes chip, in the shell of packing into, carry out cold weld encapsulation under the inflated with nitrogen, encapsulation back pipe thickness 5～6mm.
The manufacture method of above-mentioned 16000A/200～400V electric welding machine avalanche commutation diode special is placed on the silicon boat after earlier silicon chip being cleaned when silicon chip spreads, and alternately places N between adjacent monocrystalline silicon piece
+, P
+Paper source sheet is placed the silicon liner at silicon boat two ends, push in the diffusion furnace after spring that silicon boat one end is put compresses monocrystalline silicon piece and paper source sheet; When silicon boat temperature during to 390-410 ℃, sheet burning in paper source also makes silicon chip be pressed tightlyer, moves the silicon boat to fire door from diffusion furnace, carefully takes off spring, the silicon boat is pushed once more the flat-temperature zone carries out High temperature diffusion in the diffusion furnace under 1250 ℃.
The manufacture method of above-mentioned electric welding machine avalanche commutation diode special, described titanium: nickel: gold or titanium: nickel: silver-colored thickness is respectively 0.2 μ m: 0.5 μ m: 0.1 μ m.
The manufacture method of above-mentioned electric welding machine avalanche commutation diode special, cathode table surface undergoes spray sand molding angle are 45～55 °, to satisfy the avalanche characteristic requirement.
Advantage of the present invention is:
1, owing to adopt radially low-resistance monocrystalline silicon piece of N type (100), improves current expansion ability 30%;
2, adopt diameter of phi 70mm, thickness 0.18 ± 0.01mm monocrystalline silicon piece, once spread simultaneously and place the compaction measure of silicon boat one end spring, guaranteed that diffusion back silicon chip is indeformable, thereby promoted high current capacity, reduced power consumption through the silicon pad by two-sided.
3, by being lowered into product tube thickness to 5.5 ± 0.5mm, improve the moment heat-sinking capability, satisfy the welding machine requirement.
4, N-PT (non-break-through) the snowslide structure by optimizing, and supreme thermal compensation sheet Zhan won ton down is approximately thin respectful difficulty
Is nice food accumulate the numerous F human skull of the sound of footsteps and is called out the catfish firewood and carefully kowtow angry blood clam and rouse the health fine linen? IFSM 〉=1 * 10
5A/10ms) ability, and very high reverse surge current (IRSM 〉=1 * 10 is arranged
4A/2ms) ability.
5, cathode and anode titanium-nickel-Jin ohmic contact, and each layer thickness scientific optimization are guaranteed the reliability that device works long hours.
Description of drawings
Fig. 1 is a cut-away view of the present invention;
Fig. 2 is an assembly structure general assembly drawing of the present invention;
Fig. 3 is that diffusion sheet of the present invention is put structural representation;
Fig. 4 quartz boat structural representation of the present invention.
Embodiment
Embodiment 1
As shown in the figure, this electric welding machine avalanche commutation diode special is to be made of shell, chip 1, and described chip 1 comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode titanium-nickel-Jin (ohmic contact 2,3 of or titanium-nickel-Yin), evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m, pipe thickness 5.5 ± 0.5mm.Chip 1 adopts radially low-resistance monocrystalline silicon piece of N type (100), and electricalresistivity n is that 5～10 Ω-cm, diameter are Φ 70mm, thickness 0.18 ± 0.01mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided.
The manufacture method of this electric welding machine avalanche commutation diode special is: adopt radially low-resistance monocrystalline silicon piece 101 of N type (100), described monocrystalline silicon piece 101 diameters are 70mm, and thickness 0.18 ± 0.01mm, electricalresistivity n are 5～10 Ω-cm.After the cleaning, be placed on the silicon boat 4, between adjacent monocrystalline silicon piece 1, alternately place N
+, P
+ Paper source sheet 5 is placed silicon liner 6 at silicon boat 4 two ends, the spring 7 by placing silicon boat 4 one ends pushes diffusion furnace after monocrystalline silicon piece 1 and paper source sheet 5 are compressed; When silicon boat 4 temperature to 390～410 ℃, paper source sheet 5 burning also makes silicon chip 101 be pressed tightlyer in the effect of spring 7, move silicon boat 4 to fire door from diffusion furnace, take off spring 7, (silicon chip 101 in this moment silicon boat 4 together with the silicon liner 6 at two ends by tighter being crimped on) pushes silicon boat 4 that the flat-temperature zone carries out two-sided once diffusion in the diffusion furnace under 1250 ℃ once more.
Diffusion sheet detects: P
+District surface concentration 0.04～0.06mV/mA, junction depth X
JPBe 78～82 μ m; N
+District surface concentration 0.06～0.08mV/mA, junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 9～13 μ S.
Diffusion sheet carries out the evaporation of electron beam multilevel metallization behind sandblast, cleaning, dewatered drying, (ohmic contact of or titanium-nickel-Yin), evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively gold: 0.2 μ m: 0.5 μ m: 0.1 μ m to realize cathode and anode titanium-nickel-Jin.
45～55 ° of cathode table surface undergoes spray sand molding angles are cleaned, after the polyimide passivation protection, are carried out centre and test (comprising oppositely withstand voltage, high temperature electric leakage, peak on state voltage, threshold voltage, slope resistance and surge current voltage) through burn into; With middle test passes chip 1, be contained in the chip locating ring 9, be placed in the lower house then and cover anode cover 8, described lower house is to be one by copper briquetting 10 and ceramic ring 11 burn-backs, carries out cold weld encapsulation under the inflated with nitrogen; Encapsulation back pipe thickness 5.5 ± 0.5mm.
Pipe after the encapsulation is through conventionally test and avalanche condition tests such as high temperature off-state, 16000 amperes of on-states.After the test passes, coupling, grouping, packing warehouse-in.
Embodiment 2
As shown in the figure, this electric welding machine avalanche commutation diode special is to be made of shell, chip 1, described chip 1 comprises base N, expand phosphorus district N+ and expand boron district P+ and cathode and anode titanium-nickel-Jin (ohmic contact 2,3 of or titanium-nickel-Yin), titanium: nickel: (or titanium: nickel: silver) thickness is respectively gold: 0.2 μ m: 0.5 μ m: 0.1 μ m, pipe thickness 5.5 ± 0.5mm.Chip 1 adopts radially low-resistance monocrystalline silicon piece of N type (100), and electricalresistivity n is 5～10 Ω-cm, and diameter is 70mm, thickness 0.18 ± 0.01mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided.
The manufacture method of this electric welding machine avalanche commutation diode special is: adopt radially low-resistance monocrystalline silicon piece 101 of N type (100), described monocrystalline silicon piece 101 diameters are 70mm, and thickness 0.18 ± 0.01mm, electricalresistivity n are 5～10 Ω-cm.After the cleaning, be placed on the silicon boat 4, between adjacent monocrystalline silicon piece 1, alternately place N
+, P
+ Paper source sheet 5 is placed silicon liner 6 at silicon boat 4 two ends, the spring 7 by placing silicon boat 4 one ends pushes diffusion furnace after monocrystalline silicon piece 101 and paper source sheet 5 are compressed; When silicon boat 4 temperature to 390～410 ℃, paper source sheet 5 burning also makes silicon chip 101 be pressed tightlyer in the effect of spring 7, move silicon boat 4 to fire door from diffusion furnace, take off spring 7, (silicon chip 101 in this moment silicon boat 4 together with the silicon liner 6 at two ends by tighter being crimped on) pushes silicon boat 4 that the flat-temperature zone carries out two-sided once diffusion in the diffusion furnace under 1250 ℃ once more.
Diffusion sheet detects: P
+District surface concentration 0.04～0.06mV/mA, junction depth X
JPBe 78～82 μ m; N
+District surface concentration 0.06～0.08mV/mA, junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 9～13 μ S.
Diffusion sheet carries out the evaporation of electron beam multilevel metallization behind sandblast, cleaning, dewatered drying, evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is gold: 0.2 μ m: 0.5 μ m: 0.1 μ m.
Cathode table surface undergoes spray sand molding angle θ is 45～55 °, after burn into cleaning, polyimide passivation protection, carries out centre test (comprising off-state, on-state test); With middle test passes chip 1, be contained in and be placed in the lower house in the chip locating ring 9 then and cover anode cover 8, described lower house is to be one by copper briquetting 10 and ceramic ring 11 burn-backs, carries out cold weld encapsulation under the inflated with nitrogen; Encapsulation back pipe thickness 5.5 ± 0.5mm.
Pipe after the encapsulation is through off-state and on-state test (comprising oppositely withstand voltage, high temperature electric leakage, peak on state voltage, threshold voltage, slope resistance and surge current voltage tester) and avalanche condition test.After the test passes, coupling, grouping, packing warehouse-in.
Embodiment 3
As shown in the figure, this electric welding machine avalanche commutation diode special is to be made of shell, chip 1, and described chip 1 comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode titanium-nickel-Jin (ohmic contact 2,3 of or titanium-nickel-Yin), titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m, pipe thickness 5.5 ± 0.5mmmm.Chip 1 is adopted as radially low-resistance monocrystalline silicon piece of N type (100), and electricalresistivity n is 5～10 Ω-cm, and diameter is Φ 70mm, thickness 0.18 ± 0.01mm.Expand phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided.
The manufacture method of this electric welding machine avalanche commutation diode special is: adopt radially low-resistance monocrystalline silicon piece 101 of N type (100), described monocrystalline silicon piece 101 diameters are 70mm, and thickness 0.18 ± 0.01mm, electricalresistivity n are 5～10 Ω-cm.After the cleaning, be placed on the silicon boat 4, between adjacent monocrystalline silicon piece 101, alternately place N
+, P
+Silicon liner 6 is placed in paper source 5 at silicon boat 4 two ends, the spring 7 by placing silicon boat 4 one ends pushes diffusion furnace after monocrystalline silicon piece 101 and paper source 5 are compressed; When silicon boat 4 temperature to 390～410 ℃, paper source sheet 5 burning also makes silicon chip 101 be pressed tightlyer in the effect of spring 7, move silicon boat 4 to fire door from diffusion furnace, take off spring 7, (silicon chip 101 in this moment silicon boat 4 together with the silicon liner 6 at two ends by being crimped on more tightly) pushes silicon boat 4 that the flat-temperature zone carries out two-sided once diffusion in the diffusion furnace under 1250 ℃ once more.
Diffusion sheet detects: P
+District surface concentration 0.04～0.06mV/mA, junction depth X
JPBe 78～82 μ m; N
+District surface concentration 0.06～0.08mV/mA, junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 9～13 μ S.
Diffusion sheet carries out the evaporation of electron beam multilevel metallization behind sandblast, cleaning, dewatered drying, (ohmic contact of or titanium-nickel-Yin), evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m to realize cathode and anode titanium-nickel-Jin.
45～55 ° of cathode table surface undergoes spray sand molding angles are cleaned, after the polyimide passivation protection, are carried out centre and test (comprising oppositely withstand voltage, high temperature electric leakage, peak on state voltage, threshold voltage, slope resistance and surge current voltage) through burn into; With middle test passes chip 1, be contained in and be placed in the lower house in the chip locating ring 9 then and cover anode cover 8, described lower house is to be welded as a whole by copper briquetting 10 and ceramic ring 11, carries out cold weld encapsulation under the inflated with nitrogen; Encapsulation back pipe thickness 5.5 ± 0.5mm.
Pipe after the encapsulation is through conventionally test and avalanche condition test.After the test passes, coupling, grouping, packing warehouse-in.
Claims (5)
1. 16000A/200～400V electric welding machine avalanche commutation diode special, constitute by shell, chip, described chip comprises base N, expands phosphorus district N+ and expands boron district P+ and cathode and anode ohmic contact, it is characterized in that: described chip adopts radially low-resistance monocrystalline silicon piece of N type (100), described monocrystalline silicon piece electricalresistivity n is that 5～10 Ω-cm, diameter are 70mm, thickness 0.17～0.19mm, and pipe thickness is 5～mm, expand phosphorus district N+ and expand boron district P+ and two-sidedly once diffuse to form, the cathode and anode ohmic contact is titanium-nickel-Jin or titanium-nickel-Yin.
2. the manufacture method of an electric welding machine avalanche commutation diode special is characterized in that:
Adopting electricalresistivity n is that 5～10 Ω-cm, diameter are N type (100) the low-resistance monocrystalline silicon piece radially of 70mm, thickness 0.17～0.19mm;
Two-sided once diffusion is carried out in the silicon chip diffusion under 1250 ℃;
Diffusion sheet detects, and P+ district surface concentration 0.04～0.06mV/mA, junction depth XjP are 78～82) μ m; N+ district surface concentration 0.06～0.08mV/mA, junction depth XjN are 58～62 μ m, and base remaining minority carrier life time τ p is 9～13 μ S;
Diffusion sheet carries out the evaporation of electron beam multilevel metallization behind sandblast, cleaning, dewatered drying, realize cathode and anode titanium-nickel-Jin ohmic contact; Table surface undergoes spray sand molding, after burn into cleaning, polyimide passivation protection, middle test;
With middle test passes chip, in the shell of packing into, carry out cold weld encapsulation under the inflated with nitrogen, encapsulation back pipe thickness 5～6mm.
3. the manufacture method of 16000A/200 according to claim 2～400V electric welding machine avalanche commutation diode special, it is characterized in that: be placed on the silicon boat after when silicon chip spreads, earlier silicon chip being cleaned, between adjacent monocrystalline silicon piece, alternately place N+, P+ paper source sheet, place the silicon liner at silicon boat two ends, after spring that silicon boat one end is put compresses monocrystalline silicon piece and paper source sheet, push in the diffusion furnace; When silicon boat temperature during to 390-410 ℃, sheet burning in paper source also makes silicon chip be pressed tightlyer, moves the silicon boat to fire door from diffusion furnace, carefully takes off spring, the silicon boat is pushed once more the flat-temperature zone carries out High temperature diffusion in the diffusion furnace under 1250 ℃.
4. the manufacture method of electric welding machine avalanche commutation diode special according to claim 2 is characterized in that: described titanium: nickel: gold or titanium: nickel: silver-colored thickness is respectively 0.2 μ m: 0.5 μ m: 0.1 μ m.
5. the manufacture method of electric welding machine avalanche commutation diode special according to claim 2 is characterized in that: the cathode table surface undergoes spray sand molding angle is 45～55 °.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103039515A CN101582455B (en) | 2009-07-02 | 2009-07-02 | Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009103039515A CN101582455B (en) | 2009-07-02 | 2009-07-02 | Avalanche commutation diode special for 16000A/200-400V welding machine and preparation method thereof |
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| CN101582455B CN101582455B (en) | 2011-01-05 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285775A (en) * | 2018-09-13 | 2019-01-29 | 安徽钜芯半导体科技有限公司 | A kind of manufacture craft of avalanche rectifier diode |
| CN113223960A (en) * | 2021-04-12 | 2021-08-06 | 黄山芯微电子股份有限公司 | Crimping type thyristor core and manufacturing method |
-
2009
- 2009-07-02 CN CN2009103039515A patent/CN101582455B/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109285775A (en) * | 2018-09-13 | 2019-01-29 | 安徽钜芯半导体科技有限公司 | A kind of manufacture craft of avalanche rectifier diode |
| CN113223960A (en) * | 2021-04-12 | 2021-08-06 | 黄山芯微电子股份有限公司 | Crimping type thyristor core and manufacturing method |
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| Publication number | Publication date |
|---|---|
| CN101582455B (en) | 2011-01-05 |
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Application publication date: 20091118 Assignee: Jinzhou Shenghe Power Electronic Co., Ltd. Assignor: Jinzhou City Shuanghe Electric Appliance Co., Ltd. Contract record no.: 2012210000131 Denomination of invention: Avalanche rectifier diode special for 16000A/200~400V electric welder and manufacturing method thereof Granted publication date: 20110105 License type: Exclusive License Record date: 20120928 |
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Effective date of registration: 20180802 Address after: 121000 Tian Dong Street, Jinzhou economic and Technological Development Zone, Liaoning Patentee after: Jinzhou Shenghe Power Electronic Co., Ltd. Address before: 121000 104 Jintun village, Ling He District, Jinzhou, Liaoning Patentee before: Jinzhou City Shuanghe Electric Appliance Co., Ltd. |