CN201877430U

CN201877430U - High-frequency thyristor

Info

Publication number: CN201877430U
Application number: CN201020626427XU
Authority: CN
Inventors: 夏吉夫; 崔振森; 潘福泉
Original assignee: YICHANG SPAR POWER ELECTRONIC CO Ltd
Current assignee: YICHANG SPAR POWER ELECTRONIC CO Ltd
Priority date: 2010-11-26
Filing date: 2010-11-26
Publication date: 2011-06-22
Anticipated expiration: 2020-11-26

Abstract

The utility model discloses a high-frequency thyristor, which comprises the thyristor. A monocrystalline silicon piece comprises a P<+>P1N1P2N2 type asymmetric architecture; and a graph of an N2 area is involute graphs. The monocrystalline silicon piece uses an N-type (100) crystallographic orientation low-resistance monocrystalline silicon piece; a P<+> layer is formed by grinding and thinning a P layer and diffusing; the thickness of the P<+> layer is 15mum; the thickness of the P layer is 60mum; in the tabletop modeling of the monocrystalline silicon piece, the lapping angle theta 1 of a positive bevel angle is more than or equal to 60 degrees and less than or equal to 80 degrees; the lapping angle theta 2 of an negative bevel angle is more than or equal to 3.5 degrees and less than or equal to 4.5 degrees; a titanium nickel gold vapor deposition layer is arranged on the upper surface of the P<+> layer, wherein the thickness of Ti is 0.2mum, the thickness of Ni is 0.5mum and the thickness of Au is 0.1mum; and the space D between short circuit points distributed near 2-8 involute graphs is 0.4mm and the diameter d of the short circuit points is 0.08mm. According to the thyristor disclosed by the utility model, the application frequency of the thyristor is improved, the quality of products is improved and the requirements for saving energy and reducing consumption can be met.

Description

A kind of high-frequency thyratron transistor

Technical field

The utility model relates to a kind of power electronic device, particularly a kind of high-frequency thyratron transistor.

Background technology

It is long that the tradition high-frequency thyratron transistor turns on and off the time, and operating frequency is lower, and the operating current only a few can reach 1200A, and seldom operating frequency is about 8 ~ 10KHZ.As China Patent No.: a kind of high-frequency thyratron transistor that 87208366 utility model patents provide, mean on state current 200A, operating frequency 10KHZ is applicable to the above intermediate frequency power supply of 8KHZ; China Patent No.: the high-frequency thyratron transistor that 200510086992 utility model patents provide, can be at 8～10kHz, mean on state current 1200A is work down.

And forward on-state average current IT (AV)=2500A, repetitive peak off state voltage U _DRM=1200V, repetitive peak reverse voltage U _RRM=1200V, the high-frequency thyratron transistor of applying frequency f=10KHz is the Primary Component of equipment such as high frequency melting, high-frequency quenching, is the Primary Component of frequency applications market in urgent need.This high-frequency thyratron transistor had both solved the 10KHz frequency applications, required high-power (electric current: 2500A, voltage: 1200V) again.Improve operating frequency and found the solution simultaneously certainly the voltage and current high contradiction that is not easy to do again.And traditional high-power high-frequency smelting furnace, or adopt to sacrifice efficient and reduce applying frequency, or the application limitations that parallel connection brings by the power of merely hitting (as 200A) high-frequency thyratron transistor more.

But which kind of mode has all been brought a lot of restrictions to application.The applying frequency that improves thyristor be improve the quality of products, energy-saving and cost-reducing needs, and the big capacity high-frequency thyratron transistor energy-efficient product of market in urgent need especially.

Summary of the invention

The technical problems to be solved in the utility model provides a kind of high-frequency thyratron transistor, has improved the current expansion ability, and higher dv/dt and di/dt tolerance are arranged, and has guaranteed withstand voltage and dynamic characteristic again; Improve the applying frequency of thyristor, improved the quality of products, satisfied energy-saving and cost-reducing needs.

For solving the problems of the technologies described above, a kind of high-frequency thyratron transistor that the utility model patent provides comprises thyristor, and monocrystalline silicon piece is by P ⁺P ₁N ₁P ₂N ₂The type unsymmetric structure constitutes, N ₂The figure in district is the involute figure.

Monocrystalline silicon piece adopts N type (100) crystal orientation low-resistance monocrystalline silicon piece.

P ⁺Layer constitutes after grinding the attenuate diffusion by the P layer.

P ⁺Layer thickness is 15 μ m, and the P layer thickness is 60 μ m.

In the table top moulding of monocrystalline silicon piece, orthogonal rake angle lap angle θ ₁Size is: 60o ≦ θ ₁≦ 80o, negative bevel angle lap angle θ ₂Size is: 3.5 ° ≦ θ ₂≦ 4.5 °.

P ⁺Layer end face is provided with titanium nickel gold evaporation layer, and thickness is respectively: Ti:0.2 μ m, Ni:0.5 μ m, Au:0.1 μ m.

The involute figure is 2 ~ 8.

Near the short dot space D=0.4mm that distributes the involute, diameter d=0.08mm.

A kind of high-frequency thyratron transistor that the utility model patent provides, beneficial effect is as follows:

1, forward on-state average current I _{T (AV)}=2500A, V _DRM=V _RRM=1200V, applying frequency f=10KHz.

2, adopt N type 100 crystal orientation low-resistance monocrystalline silicon pieces, compare 111 crystal orientation single-chips, improved current expansion ability 20% ~ 30%, help the raising of current-rising-rate di/dt.

3, adopt the silicon chip that diameter is less than normal, thickness is thin partially,, spread P behind the attenuate by two-sided P type diffusion ⁺, and after the another side oxidation photoetching, spread N again ⁺Asymmetric P ₁, P ₂The method in district.Asymmetric P ₁, P ₂The method in district had both made silicon chip thinner, had guaranteed withstand voltage and dynamic characteristic again.

4, the utility model reticle figure adopts the plug-type amplification gate structure of involute, it is scientific and reasonable to distribute, and all under a figure location, precision is made for positive and negative reticle and negative electrode pad, guarantee to open electric current universe expansion equably, device has higher dv/dt and di/dt tolerance.

5, brand-new base minority carrier life time τ _PControl method: reduce base minority carrier life time τ _PBe the key technology of making high-frequency thyratron transistor, what the utility model adopted is to expand technology control minority carrier life time τ golden and that electron irradiation combines _P, increase the complex centre, reduce minority carrier lifetime, thereby reduce the turn-off time.

6, the table top moulding changes the sandblast moulding into by the angle lap moulding, and promptly orthogonal rake is the wide-angle sandblast, change the angle lap angle can only 35 the following situation of degree, can spray the positive angles of 60 ~ 80 degree; Negative bevel also changes the sandblast moulding into, realizes the moulding of class table top.Realization cathode area maximum, the tracking current minimum has improved cathode area again.

7, the anode ohmic contact adopts electron beam evaporation titanium-nickel-gold process, guarantees the device long reliability.

8, cooperate N type 100 crystal orientation low-resistance monocrystalline silicon pieces, remove anode and burn aluminium technology, the total head of high-pressure thyristor is connect the technology directly transplanting on the high-power high-frequency thyristor.

9, adopt the dedicated ceramic shell of 95% aluminium oxide of no shirt rim, vacuum nitrogen air cooling press seal dress, helium mass spectrum leak detection is qualified.

Description of drawings

Below in conjunction with drawings and Examples the utility model is further specified:

Fig. 1 is a monocrystalline silicon piece structural representation of the present utility model;

Fig. 2 is a table top modeling structure schematic diagram of the present utility model;

Fig. 3 is a reticle pattern of the present utility model;

Fig. 4 connects encapsulation internal structure schematic diagram for total head of the present utility model.

Embodiment

A kind of high-frequency thyratron transistor comprises thyristor, and monocrystalline silicon piece 1 is by P ⁺P ₁N ₁P ₂N ₂The type unsymmetric structure constitutes, N ₂The figure in district 4 is the involute figure.

Monocrystalline silicon piece 1 adopts N type (100) crystal orientation low-resistance monocrystalline silicon piece.

P ⁺Layer 5 ' constitutes after grinding the attenuate diffusion by P layer 5.

P ⁺Layer 5 ' thickness is 15 μ m, and P layer 5 thickness are 60 μ m.

In the table top moulding of monocrystalline silicon piece 1, orthogonal rake angle lap angle θ ₁Size is: 60o ≦ θ ₁≦ 80o, negative bevel angle lap angle θ ₂Size is: 3.5 ° ≦ θ ₂≦ 4.5 °.

P ⁺Layer 5 ' end face is provided with titanium nickel gold evaporation layer 3, and thickness is respectively: Ti:0.2 μ m, Ni:0.5 μ m, Au:0.1 μ m.

The involute figure is 2 ~ 8.

Copper layer 7 links to each other with titanium nickel gold evaporation layer 3 and constitutes the ohmic contact negative electrode, and copper layer 7 ' links to each other with aluminium lamination 2 and constitutes the ohmic contact anode.

Monocrystalline silicon piece 1 is encapsulated in ceramic cartridge 6 inside, is filled with polytetrafluoroethylene 8 insulation between monocrystalline silicon piece 1 and the ceramic cartridge 6 and fixes.

The P that monocrystalline silicon piece 1 constitutes ⁺P ₁N ₁P ₂N ₂Basic structure is unsymmetric structure.

Ceramic cartridge 6 adopts 95% aluminium oxide of no shirt rim.

The utility model manufacturing process:

N type (100) crystal orientation low-resistance (ρ n=45 Ω-cm) monocrystalline silicon piece 1 test, screening, classification → shakeout, is deoiled, cleans, is corroded → dry → the pure gallium diffusion → oxidation of stopped pipe → anode surface P ⁺Diffusion → cathode plane abrasive disc → oxidation → photoetching → phosphorus oxychloride gas carries N ⁺Diffusion → photoetching → electron beam evaporation → positive negative angle sandblast moulding → burn into passivation, protection, oven dry → middle survey → total head tipping join → the vacuum nitrogen air cooling envelope → helium mass spectrum population parameter detection → printing → quality certificate → warehouse-in of stopping leakage in the roof → dispatch from the factory.

Embodiment:

The utility model high-frequency thyratron transistor is to spread P layer 5,5 ' at the middle of N type (100) crystal orientation, low-resistance (40 ~ 50) Ω according to carrying out a two-sided vacuum stopped pipe on the monocrystalline silicon piece 1, i.e. a pure gallium diffusion of P type, and junction depth 55 μ m, single face expands P after grinding 15 μ m ⁺Layer 5 ' is done anode surface, oxidation and in another P profile photoetching, and single face carries out phosphorus oxychloride N then ⁺Diffuse to form N ₂Distinguish 4, constitute the thyristor P of asymmetrical gross thickness 250 μ m ⁺P ₁N ₁P ₂N ₂Basic structure, as shown in Figure 1;

The table top moulding changes the sandblast moulding into by the angle lap moulding, is positive and negative corner structure.Be that orthogonal rake is the wide-angle sandblast, change the angle lap angle can only 35 the following situation of degree, can spray the positive angles of 60 ~ 80 degree; Negative bevel also changes the sandblast moulding into, realizes the moulding of class table top.Realization cathode area maximum, the tracking current minimum has improved cathode area again, as shown in Figure 2;

Adopt the plug-type amplification gate structure of involute, short dot space D=0.4mm that same involute distributes, diameter d=0.08mm, it is scientific and reasonable to distribute, reticle and negative electrode pad all draw under same central figure, as shown in Figure 3 and accurate the making, guarantee to open electric current equably universe launch, device has higher dv/dt and di/dt tolerance; By above-mentioned technology, realize forward on-state average current I _{T (AV)}=2500A, V _DRM=V _RRM=1200V.

To N type (100) crystal orientation low-resistance monocrystalline silicon piece 1, do not adopt conventional anode to burn aluminium technology, and the total head that high-pressure thyristor is adopted connect the technology directly transplanting in the high-power high-frequency thyristor, as shown in Figure 4.

Adopt the dedicated ceramic shell of 95% aluminium oxide of no shirt rim, vacuum nitrogen air cooling press seal dress, helium mass spectrum leak detection is qualified, and the commutation turn-off time t that removes regulation _qWith QRR Q _RrOutside the test, the strict gate pole of carrying out triggers service time t _GtWith 10KHz high frequency rated current energising experiment.

The utility model adopts the technology that all absorbs before and after the diffusion to guarantee τ _P, make τ _P〉=15 μ s promptly guarantee τ _nUnder the situation of 〉=1 μ s, realize low on-state pressure drop V _TMValue makes high current density J _TBecome possibility, and current density, J _THelp improving electric current speed extending transversely greatly.Reduce base minority carrier life time τ _PIt is the key technology of making high-frequency thyratron transistor.Expansion gold, platinum expansion absorb again, and long-term reliability is good, help each electrical quantity most and coordinate, but poor repeatability is wayward; Electron irradiation (containing fast neutron, gamma-rays etc.), simple, can adjust minority carrier life time τ easily repeatedly _P, not limited by other technical process, but irradiation results easily degrade, long-term reliability is poor; The proton irradiation degree of depth can be controlled, and performance is best.What the utility model adopted is to expand technology control minority carrier life time τ golden and that electron irradiation combines _P: promptly expand gold in advance, minority carrier life time is dropped to about 1/5 of initial value, i.e. τ _P=3 μ s adopt electronic irradiation technique again, then with τ _PBe controlled at 1～1.2 μ s, improve applying frequency: f=10KHz.

Claims

1. a high-frequency thyratron transistor comprises thyristor, it is characterized in that: monocrystalline silicon piece (1) is by P ⁺P ₁N ₁P ₂N ₂The type unsymmetric structure constitutes, N ₂The figure in district (4) is the involute figure.

2. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: monocrystalline silicon piece (1) adopts N type (100) crystal orientation low-resistance monocrystalline silicon piece.

3. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: P ⁺Layer (5 ') grinds attenuate diffusion back by P layer (5) and constitutes.

4. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: P ⁺Layer (5 ') thickness is 15 μ m, and P layer (5) thickness is 60 μ m.

5. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: in the table top moulding of monocrystalline silicon piece (1), and orthogonal rake angle lap angle θ ₁Size is: 60o ≦ θ ₁≦ 80o, negative bevel angle lap angle θ ₂Size: 3.5 ° ≦ θ ₂≦ 4.5 °.

6. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: P ⁺Layer (5 ') end face is provided with titanium nickel gold evaporation layer (3), and thickness is respectively: Ti:0.2 μ m, Ni:0.5 μ m, Au:0.1 μ m.

7. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: the involute figure is 2 ~ 8.

8. a kind of high-frequency thyratron transistor according to claim 1 is characterized in that: near the short dot space D=0.4mm that distributes the involute, diameter d=0.08mm.