CN203760491U - MWT solar cell - Google Patents
MWT solar cell Download PDFInfo
- Publication number
- CN203760491U CN203760491U CN201420139614.3U CN201420139614U CN203760491U CN 203760491 U CN203760491 U CN 203760491U CN 201420139614 U CN201420139614 U CN 201420139614U CN 203760491 U CN203760491 U CN 203760491U
- Authority
- CN
- China
- Prior art keywords
- electrode
- type metal
- solar cell
- metal
- metal contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000002184 metal Substances 0.000 claims abstract description 66
- 238000003466 welding Methods 0.000 claims abstract description 15
- 230000005684 electric field Effects 0.000 claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000012545 processing Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 2
- 239000004332 silver Substances 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 7
- 229910001092 metal group alloy Inorganic materials 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000001723 curing Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses an MWT solar cell including through hole electrodes. A first electrode and a back electric field are arranged on the back side of the cell, N type metal contacts corresponding to the through hole electrodes one by one are arranged on the back side, a bar-shaped insulation dielectric layer covers on the surface of the area where each N type metal contact array is arranged, a second metal layer is arranged on each insulation dielectric layer, the second metal layers are electrically connected with the N type metal contacts under the second metal layer to form a welding electrode. and the N type metal contacts are circular point contacts and have a diameter of 0.5-1 micron. The insulation dielectric layers and the second metal layers are introduced, so that the diameter of each N type metal contact is greatly reduced, efficiency maximization is realized, and consumption of Ag metal slurry is reduced while contact electric leakage of metal and a semiconductor is reduced. As shown by actual use, the consumption of the silver paste is reduced by about 90%, so that the non-silicon processing cost of the cell is greatly reduced.
Description
Technical field
The utility model relates to a kind of MWT solar cell, belongs to field of solar energy.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential alternative energy source of one.Device of solar generating is called again solar cell or photovoltaic cell, solar energy can be directly changed into electric energy, and its electricity generating principle is the photovoltaic effect of based semiconductor PN junction.At present, the most general structure of solar cell is that photronic both positive and negative polarity is placed in respectively to sensitive surface and shady face, and realize by low-resistance metal positive and negative interconnected, but because the area in these a lot of regions of battery sensitive surface is blocked and lost one part of current by electrode.
Along with the development of solar energy generation technology, for improving the efficiency of photoelectric conversion of the sun, people have developed new class " back of the body contact " battery, be characterized in cancelling solar cell sensitive surface in order to weld the main grid line of use, only retain a small amount of secondary grid line and be used for collecting sensitive surface electric current, electric current script sensitive surface being produced by technological means is guided to shady face, and in shady face relevant position, positive and negative electrode is set, thereby can reduce the shading of sensitive surface, increase photoelectric conversion efficiency, and be beneficial to interconnecting between photocell.
In back of the body contact battery, MWT(Metallization Wrap Through) solar cell is the maximum class of application.The optical loss of MWT solar cell is generally in 5% left and right.Realize interconnected to assembly of battery, weld zone when cell backside needs very wide metal pad to connect as assembly, these metals pad is conventionally rounded, and diameter is about 4 ~ 6mm.In traditional handicraft, these pad adopt Ag slurry conventionally, have consequently increased on the one hand the non-silicon processing cost of battery, affect on the other hand the connection of assembly, have limited the advantage of back of the body contact battery.
Summary of the invention
The utility model object is to provide a kind of MWT solar cell.
For achieving the above object, the technical solution adopted in the utility model is: a kind of MWT solar cell, comprise through hole electrode, and cell backside is provided with the first electrode and back of the body electric field; The polarity of described the first electrode and through hole electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field;
Be provided with overleaf and described through hole electrode N-type Metal Contact one to one, N-type Metal Contact is set up in parallel, and forms at least 1 row N-type Metal Contact row;
Be provided with the insulating medium layer of strip in the surface coverage of each N-type Metal Contact row region; The quantity of insulating medium layer is identical with the columns of N-type Metal Contact row;
On described each insulating medium layer, be equipped with the second metal level, the second metal level is electrically connected with the N-type Metal Contact of its below, forms welding electrode;
The welding pulling force of described the second metal level is greater than 4N/mm;
Described N-type Metal Contact is the contact of circular point, and its diameter is 0.5 ~ 1 millimeter.
Above, be provided with the insulating medium layer of strip in the surface coverage of each N-type Metal Contact peripheral region, this insulating medium layer covers the outer peripheral areas of N-type Metal Contact.
The thickness of described insulating medium layer is 5 ~ 30 microns, has fine adhesive force with metal level, can barrier metal particle penetrate, insulation resistance is megohm rank; One in the optional epoxy resin of described insulating cement, polyimides, acrylic resin, curing mode optional heat solidifies or the mode of ultra-violet curing.Heat curing process temperature is less than or equal to 300 degree.Hot curing can also synchronously be carried out with follow-up sintering process.
Described the second metal level can be by silk screen printing, and the mode of ultrasonic spraying or chemical adhesion realizes.
In technique scheme, described battery back electric field is provided with the first electrode, and the first electrode and the second metal level be arranged in parallel.
In technique scheme, described the first electrode is P type welding electrode, and described the first electrode is copper layer or tin layer, and its welding pulling force is greater than 4N/mm.The optional copper layer of described the first electrode, tin layer or other metal alloy.
In technique scheme, the thickness of described insulating medium layer is 5-30 micron, and its insulation resistance is megohm rank, and the two ends of insulating medium layer extend to the end of cell piece along its length.Insulating medium layer and AL back of the body metal level have fine adhesive force, can stop penetrating of the second metal level metallic.
In technique scheme, described the second metal level is copper layer or tin layer.Also can select other metal alloy.
Because technique scheme is used, the advantage that the utility model compared with prior art has is:
1. the utility model design has obtained a kind of new MWT solar cell, insulating medium layer and the second metal level are introduced, greatly reduce the diameter of N-type Metal Contact, realize maximizing efficiency, contacting electric leakage with semiconductor in, reduces on minimizing metal the consumption of Ag metal paste, practical application discovery, silver slurry consumption has reduced by 90% left and right, thereby greatly reduces the non-silicon processing cost of battery; In addition, evidence, the transformation efficiency of the solar cell that the utility model obtains has promoted 0.4% left and right, has obtained beyond thought effect.
2. the second metal level of the present utility model forms welding electrode, finally realize interconnected between cell piece, being used in conjunction with of insulating medium layer and the second metal level ensureing the half minimized while of contact area of metal, increase bonding area, be convenient to assembly automatic welding, and assembly is reliable and stable, there is positive realistic meaning.
3. insulating medium layer of the present utility model can not destroy the passivation of aluminium back surface field, can avoid the Efficiency Decreasing of cell piece.
4. of the present utility model simple in structure, be easy to preparation, be suitable for applying.
Brief description of the drawings
Fig. 1 is the cutaway view of the utility model embodiment mono-.
Wherein: 1, N
+emitter region; 2, anti-reflection layer; 3, through hole electrode; 4, silicon chip; 5, back of the body electric field; 6, the first electrode; 7, insulating medium layer; 8, the second metal level; 9, N-type Metal Contact.
Embodiment
Below in conjunction with drawings and Examples, the utility model is further described:
Embodiment mono-
Shown in Figure 1, a kind of MWT solar cell, comprises silicon chip 4, which is provided with through hole electrode 3, front side of silicon wafer is N
+emitter region 1, N
+emitter region is provided with silicon nitride anti-reflection layer 2, and cell backside is provided with the first electrode 6 and back of the body electric field 5; The polarity of described the first electrode and through hole electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field;
Be provided with overleaf and described through hole electrode N-type Metal Contact 9 one to one, N-type Metal Contact is set up in parallel, and forms 3 row N-type Metal Contact row;
Be provided with the insulating medium layer 7 of strip in the surface coverage of each N-type Metal Contact peripheral region, make insulating medium layer cover the gap between back of the body electric field and back surface field and through hole electrode; The quantity of insulating medium layer is identical with the columns of N-type Metal Contact row;
On described each insulating medium layer, be equipped with the second metal level 8, the second metal levels and be electrically connected with the N-type Metal Contact of its below, form welding electrode;
Described the second metal level is copper layer, tin layer or other metal alloy, and welding pulling force is greater than 4N/mm;
Described N-type Metal Contact is the contact of circular point, and its diameter is 0.5 millimeter.
Described battery back electric field is provided with the first electrode 6, the first electrodes and the second metal level be arranged in parallel.Described the first electrode is P type welding electrode, optional copper layer, tin layer or other metal alloy, and welding pulling force is greater than 4N/mm.
The thickness of described insulating medium layer is 5 ~ 30 microns, has fine adhesive force with AL back of the body metal level, can stop penetrating of the second metal level metallic, and insulation resistance is megohm rank, and two ends extend to the end of cell piece along its length.
Claims (5)
1. a MWT solar cell, comprises through hole electrode (3), and cell backside is provided with the first electrode (6) and back of the body electric field (5); The polarity of described the first electrode and through hole electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field;
Be provided with overleaf and described through hole electrode N-type Metal Contact (9) one to one, N-type Metal Contact is set up in parallel, and forms at least 1 row N-type Metal Contact row; It is characterized in that:
Be provided with the insulating medium layer (7) of strip in the surface coverage of each N-type Metal Contact row region; The quantity of insulating medium layer is identical with the columns of N-type Metal Contact row;
On described each insulating medium layer, be equipped with the second metal level (8), the second metal level is electrically connected with the N-type Metal Contact of its below, forms welding electrode;
The welding pulling force of described the second metal level is greater than 4N/mm;
Described N-type Metal Contact is the contact of circular point, and its diameter is 0.5 ~ 1 millimeter.
2. solar cell according to claim 1, is characterized in that: described battery back electric field is provided with the first electrode (6), and the first electrode and the second metal level be arranged in parallel.
3. solar cell according to claim 1, is characterized in that: described the first electrode is P type welding electrode, and described the first electrode is copper layer or tin layer, and its welding pulling force is greater than 4N/mm.
4. solar cell according to claim 1, is characterized in that: the thickness of described insulating medium layer is 5 ~ 30 microns, and its insulation resistance is megohm rank, and the two ends of insulating medium layer extend to the end of cell piece along its length.
5. solar cell according to claim 1, is characterized in that: described the second metal level is copper layer or tin layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420139614.3U CN203760491U (en) | 2014-03-26 | 2014-03-26 | MWT solar cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420139614.3U CN203760491U (en) | 2014-03-26 | 2014-03-26 | MWT solar cell |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203760491U true CN203760491U (en) | 2014-08-06 |
Family
ID=51255733
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420139614.3U Expired - Fee Related CN203760491U (en) | 2014-03-26 | 2014-03-26 | MWT solar cell |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203760491U (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115084311A (en) * | 2021-03-02 | 2022-09-20 | 阿聚尔斯佩西太阳能有限责任公司 | Method for through contact |
-
2014
- 2014-03-26 CN CN201420139614.3U patent/CN203760491U/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115084311A (en) * | 2021-03-02 | 2022-09-20 | 阿聚尔斯佩西太阳能有限责任公司 | Method for through contact |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2016045227A1 (en) | Main-gate-free and high-efficiency back contact solar cell module, assembly and preparation process | |
CN105870216A (en) | Connecting structure of crystalline silicon photovoltaic cell with transparent electrodes | |
WO2017177726A1 (en) | Solar cell module and method for manufacturing same, assembly, and system | |
RU2013131015A (en) | SUN ELEMENT AND SUN ELEMENT MODULE | |
CN110047952A (en) | A kind of solar battery Al grid line structure and preparation method thereof | |
CN105405901B (en) | Localized contact back of the body passivation solar cell | |
CN105185849A (en) | Back-contact solar cell and preparation method | |
CN104269453B (en) | Without main grid, high-level efficiency back contact solar cell backboard, assembly and preparation technology | |
CN203932078U (en) | A kind of back of the body passivation solar cell | |
CN204204882U (en) | Without main grid high efficiency back contact solar cell assembly | |
CN105118874A (en) | Crystalline silicon solar cell and manufacture method thereof | |
Söderström et al. | Low cost high energy yield solar module lines and its applications | |
CN204927300U (en) | PERC solar cell | |
CN203760491U (en) | MWT solar cell | |
CN208315555U (en) | A kind of hetero-junctions crystal silicon double-side solar cell structure | |
CN103035771B (en) | N-type MWT solar battery structure and manufacturing process thereof | |
CN106876513B (en) | It is a kind of equal from the lateral heterogeneous integrated solar cell of polariton | |
CN203760492U (en) | IBC solar cell | |
CN103872181B (en) | A kind of method for metallising of back contacts solar cell | |
CN204088341U (en) | Without main grid high efficiency back contact solar cell backboard and assembly | |
CN204118083U (en) | A kind of Cu electrode solar cell | |
CN210296390U (en) | Solar cell | |
CN102832273B (en) | A kind of high-efficiency solar photovoltaic battery sheet | |
CN218730969U (en) | Photovoltaic cell | |
CN103811576A (en) | Solar cell module and interconnecting strips thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140806 |