CN204118083U - A kind of Cu electrode solar cell - Google Patents
A kind of Cu electrode solar cell Download PDFInfo
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- CN204118083U CN204118083U CN201420404854.1U CN201420404854U CN204118083U CN 204118083 U CN204118083 U CN 204118083U CN 201420404854 U CN201420404854 U CN 201420404854U CN 204118083 U CN204118083 U CN 204118083U
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- electrode
- solar cell
- passivation layer
- transparent conductive
- oxide film
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Abstract
The utility model discloses a kind of Cu electrode solar cell, comprise Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film and Cu positive electrode, described Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film are connected successively with Cu positive electrode.Adopt the utility model, described Cu electrode solar cell low cost of manufacture, conversion efficiency is high.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly relates to a kind of Cu electrode solar cell.
Background technology
The manufacturing process of conventional crystal silicon solar cell comprises making herbs into wool, spreads, goes PSG, plating antireflective film, electrode preparation.Electrode fabrication is last procedure of battery production, it carries the charge carrier in collection silicon chip and is delivered to the responsibility of external circuit, therefore the selection of electrode material and preparation technology directly affect the properties of solar cell, are one of key links in solar cell processing procedure.Traditional crystal silicon solar energy battery forms Ag electrode at front side of silicon wafer, forms Ag back electrode and Al back surface field at silicon chip back side.Due to Ag, to have resistivity in all metals minimum, the advantages such as ohmic contact is good, and solderability is strong, technology for preparing electrode is ripe, makes the properties of Ag electrode solar cell excellent, be subject to the favor of vast enterprise.
Ag is noble metal, and it accounts for greatly 12% of battery total cost, accounts for 30% of non-silicon cost, is the important component part of battery manufacture cost, and the cost of solar cell is remained high.Therefore, be the energy composition making crystal silicon solar batteries become following important, alternative current Ag must be carried out with the base metal of low cost.
The resistivity of Cu is low, low price, makes Cu become most possible electrode of solar battery material.But can spread toward silicon chip because Cu and silicon chip directly contact, p-n junction is destroyed, therefore the barrier layer that conduction is set between silicon chip and Cu electrode is needed, general formation Ni/Cu combined electrode structure, and this Ni/Cu combined electrode structure is obtained by electric plating method, cost is high, complex process; In addition, the resistance of Ni/Cu combination electrode is compared with Ag electrode or higher, reduces the conversion efficiency of solar cell.
Utility model content
Technical problem to be solved in the utility model is, the Cu electrode solar cell providing a kind of low cost of manufacture, conversion efficiency high.
In order to solve the problems of the technologies described above, the utility model provides a kind of Cu electrode solar cell, comprise Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film and Cu positive electrode, described Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film are connected successively with Cu positive electrode.
As the improvement of such scheme, the thickness of described transparent conductive oxide film is 8-55nm.
As the improvement of such scheme, light transmittance >=92% of described transparent conductive oxide film.
As the improvement of such scheme, the resistivity <10 of described transparent conductive oxide film
-5Ω .cm.
As the improvement of such scheme, described passivation layer is silicon oxide layer, silicon nitride layer or silicon oxynitride layer.
As the improvement of such scheme, described passivation layer is provided with hole or groove.
As the improvement of such scheme, described passivation layer is provided with multiple hole or groove, and described multiple hole or groove are evenly distributed on described passivation layer.
As the improvement of such scheme, the area of described hole or groove accounts for the 3-35% of the area of described passivation layer.
As the improvement of such scheme, described transparent conductive oxide film fills up described hole or groove, and contacts with described N-type emitter.
As the improvement of such scheme, the thickness of described passivation layer is 10-70nm.
Implement the utility model, there is following beneficial effect:
The utility model provides a kind of Cu electrode solar cell, comprises Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film and Cu positive electrode.Wherein, the electrode of described solar cell all adopts base metal to obtain, and effectively reduces manufacturing cost; Described Cu electrode solar cell is provided with transparent conductive oxide film, under the prerequisite not affecting printing opacity, reduces the resistance of front electrode further; And described Cu electrode solar cell adopts transparent conductive oxide film and Al back surface field as the barrier layer of Cu electrode, and Cu can be prevented toward silicon chip diffusion inside.Therefore, Cu electrode solar cell low cost of manufacture described in the utility model, conversion efficiency is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model Cu electrode solar cell.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly, below in conjunction with accompanying drawing, the utility model is described in further detail.
See Fig. 1, the utility model provides a kind of Cu electrode solar cell, comprise Cu back electrode 1, Al back surface field 2, P-type silicon 3, N-type emitter 4, passivation layer 5, transparent conductive oxide film 6 and Cu positive electrode 7, described Cu back electrode 1, Al back surface field 2, P-type silicon 3, N-type emitter 4, passivation layer 5, transparent conductive oxide film 6 are connected successively with Cu positive electrode 7.
Wherein, described Cu back electrode 1, Cu positive electrode 7 are all obtained by the method for silk screen printing Cu slurry.The electrode of the utility model solar cell all adopts base metal Cu to obtain, and effectively reduces manufacturing cost.
Described passivation layer 5 is silicon oxide layer, silicon nitride layer or silicon oxynitride layer.The thickness of described passivation layer is preferably 10-70nm, but is not limited thereto.
Described passivation layer 5 is provided with hole or groove 51.Preferably, described passivation layer 5 is provided with multiple hole or groove 51, and described multiple hole or groove 51 are evenly distributed on described passivation layer 5.
The shape of described hole or groove 51 can be square groove, can be also circular recess, but not as limit.
The area of described hole or groove 51 accounts for the 3-35% of the area of described passivation layer 5.Better, the area of described hole or groove 51 accounts for the 5-30% of the area of described passivation layer 5.
Described transparent conductive oxide film 6 fills up described hole or groove 51, and contacts with described N-type emitter 4.
Transparent conductive oxide film 6(Transparent Conductive Oxide is called for short TCO) be heavy doping, high degenerate semiconductor, there is good electric conductivity and higher light transmittance.
Wherein, the thickness of described transparent conductive oxide film 6 is preferably 8-55nm.Better, the thickness of described transparent conductive oxide film 6 is preferably 10-50nm, but is not limited thereto.
The light transmittance of described transparent conductive oxide film 6 preferably >=92%.Better, the light transmittance of described transparent conductive oxide film 6 preferably >=95%, but is not limited thereto.
The preferred <10 of resistivity of described transparent conductive oxide film 6
-5Ω .cm, but be not limited thereto.
The utility model is provided with transparent conductive oxide film 6, under the prerequisite not affecting printing opacity, reduces the resistance of front electrode further; And the utility model adopts transparent conductive oxide film 6 and Al back surface field 2 as the barrier layer of Cu electrode, and Cu can be prevented toward silicon chip diffusion inside.
Therefore, Cu electrode solar cell low cost of manufacture described in the utility model, conversion efficiency is high.
The above is preferred implementation of the present utility model; it should be pointed out that for those skilled in the art, under the prerequisite not departing from the utility model principle; can also make some improvements and modifications, these improvements and modifications are also considered as protection range of the present utility model.
Claims (10)
1. a Cu electrode solar cell, it is characterized in that, comprise Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film and Cu positive electrode, described Cu back electrode, Al back surface field, P-type silicon, N-type emitter, passivation layer, transparent conductive oxide film are connected successively with Cu positive electrode.
2. Cu electrode solar cell as claimed in claim 1, it is characterized in that, the thickness of described transparent conductive oxide film is 8-55nm.
3. Cu electrode solar cell as claimed in claim 1, is characterized in that, light transmittance >=92% of described transparent conductive oxide film.
4. Cu electrode solar cell as claimed in claim 1, is characterized in that, the resistivity <10 of described transparent conductive oxide film
-5Ω .cm.
5. Cu electrode solar cell as claimed in claim 1, it is characterized in that, described passivation layer is silicon oxide layer, silicon nitride layer or silicon oxynitride layer.
6. Cu electrode solar cell as claimed in claim 5, it is characterized in that, described passivation layer is provided with hole or groove.
7. Cu electrode solar cell as claimed in claim 6, it is characterized in that, described passivation layer is provided with multiple hole or groove, and described multiple hole or groove are evenly distributed on described passivation layer.
8. Cu electrode solar cell as claimed in claim 6, it is characterized in that, the area of described hole or groove accounts for the 3-35% of the area of described passivation layer.
9. the Cu electrode solar cell as described in claim 6,7 or 8, it is characterized in that, described transparent conductive oxide film fills up described hole or groove, and contacts with described N-type emitter.
10. Cu electrode solar cell as claimed in claim 5, it is characterized in that, the thickness of described passivation layer is 10-70nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420404854.1U CN204118083U (en) | 2014-07-22 | 2014-07-22 | A kind of Cu electrode solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420404854.1U CN204118083U (en) | 2014-07-22 | 2014-07-22 | A kind of Cu electrode solar cell |
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| CN204118083U true CN204118083U (en) | 2015-01-21 |
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| CN201420404854.1U Active CN204118083U (en) | 2014-07-22 | 2014-07-22 | A kind of Cu electrode solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140345A (en) * | 2015-09-10 | 2015-12-09 | 国电新能源技术研究院 | Heterojunction cell and preparation method thereof |
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2014
- 2014-07-22 CN CN201420404854.1U patent/CN204118083U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140345A (en) * | 2015-09-10 | 2015-12-09 | 国电新能源技术研究院 | Heterojunction cell and preparation method thereof |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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| CP03 | Change of name, title or address |
Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69 Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20180208 Address after: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Co-patentee after: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Patentee after: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. Address before: No. 69, C District, Sanshui Industrial Park, Sanshui, Foshan, Guangdong Patentee before: GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY Co.,Ltd. |