CN103811576A - Solar cell module and interconnecting strips thereof - Google Patents
Solar cell module and interconnecting strips thereof Download PDFInfo
- Publication number
- CN103811576A CN103811576A CN201210468633.6A CN201210468633A CN103811576A CN 103811576 A CN103811576 A CN 103811576A CN 201210468633 A CN201210468633 A CN 201210468633A CN 103811576 A CN103811576 A CN 103811576A
- Authority
- CN
- China
- Prior art keywords
- interconnector
- equal
- solar cell
- interconnecting
- grid line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 239000002313 adhesive film Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 238000009413 insulation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 238000013467 fragmentation Methods 0.000 abstract 1
- 238000006062 fragmentation reaction Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000003466 welding Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000010946 fine silver Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a solar cell module and interconnecting strips thereof. The solar cell module comprises a plurality of crystalline silicon solar cell pieces, the solar call piece is provided with a main grid line, the main grid line is provided with a conductive film, the interconnecting strips are bonded on the conductive film, the interconnecting strips are made of conductive metal, the volume resistivity of the interconnecting strip is smaller than or equal to 1.9ohm*square millimeter/m, the interconnecting strip has the yield strength of smaller than or equal to 90MPa, and the tensile strength of more than or equal to 130MPa, and the coefficient of elongation of the interconnecting strip is more than or equal to 15%. According to the solar cell module and the interconnecting strips thereof, the fragmentation of the cell piece is effectively reduced, the volume resistivity of the interconnecting strip is lowered, the serially connected resistors of the cell and the module are reduced, the filling factor FF of the module is improved, the width of the interconnecting strip is reduced, and the light receiving area of the cell is increased.
Description
Technical field
The present invention relates to a kind of solar module and interconnector thereof, belong to photovoltaic technology field.
Background technology
Along with going from bad to worse and growing to electrical energy demands amount of people of day by day deficient, the environment of the growth of world today's demographic and economic, energy resources, the development and utilization of solar energy has started upsurge in the world.This is very beneficial for the sustainable development of biological environment, the offspring that benefits future generations, therefore competitively investment research exploitation solar cell of countries in the world.Solar cell is a kind of device that utilizes photovoltaic effect solar energy to be converted into electric energy.Solar cell is of a great variety, and wherein an important class is crystal silicon solar energy battery.
As everyone knows, collect the electric current that crystal-silicon solar cell produces, need to make electrode of metal at crystal-silicon solar cell sensitive surface (plane of incidence of sunlight), this electrode of metal generally comprises secondary grid line and main grid line.Secondary grid line is used for collecting the electric current of crystal-silicon solar cell generation and being transferred to main grid line, after main grid line is connected multiple crystalline silicon solar cell pieces by the interconnector (can be described as again welding, wicking copper strips) being welded thereon again, then electric current is exported by busbar and the outer lead of electrical connection mutually.
Along with the development of crystal-silicon solar cell technology, conversion efficiency is more and more higher, and the thickness of crystalline silicon solar cell piece is more and more thinner, from 300 μ m in the past 180 μ m~200 μ m up till now, may develop into from now on 160 μ m even thinner.Battery size, from 103mm × 103mm of the beginning of this century, develops into current 125mm × 125mm, 156mm × 156mm gradually, even may develop into from now on 200mm × 200mm, and the operating current of monolithic crystalline silicon solar cell piece is also thereupon increasing.Traditional welding procedure due to the higher welding temperature of needs (300~350 ℃), can produce thermal stress in welding process, increases the cracked and hidden probability splitting of crystalline silicon solar cell piece.And more large thinner crystalline silicon solar cell piece is more easily because thermal shock is cracked.
Summary of the invention
The invention provides a kind of solar module and interconnector thereof.
For achieving the above object, the first technical scheme that the present invention adopts is: a kind of interconnector, and the material of described interconnector is conducting metal; The specific insulation of described interconnector is less than or equal to 1.9 Ω mm
2/ m; The yield strength of described interconnector is less than or equal to 90MPa, and meets tensile strength and be more than or equal to 130MPa; The elongation of described interconnector is more than or equal to 15%.
Preferably, described conducting metal be that copper, silver, aluminium, copper are zinc-plated, albronze or Kufil.
Preferably, the width of described interconnector is 0.8~1.6mm, and thickness is 0.25~0.35mm.
For achieving the above object, the second technical scheme that the present invention adopts is: a kind of solar module, and described solar module comprises multiple crystalline silicon solar cell pieces, has main grid line on this solar cell piece, described main grid line is provided with conductive adhesive film, on this conductive adhesive film, is bonded with interconnector; The material of described interconnector is conducting metal; The specific insulation of described interconnector is less than or equal to 1.9 Ω mm
2/ m; The yield strength of described interconnector is less than or equal to 90MPa, and meets tensile strength and be more than or equal to 130MPa; The elongation of described interconnector is more than or equal to 15%.
Preferably, described conducting metal be that copper, silver, aluminium, copper are zinc-plated, albronze or Kufil.
Preferably, the width of described interconnector is 0.8~1.6mm, and thickness is 0.25~0.35mm.Because technique scheme is used, the present invention compared with prior art has following advantages and effect:
1, the present invention is by using crystal-silicon solar cell to coordinate the interconnector of conductive adhesive film bonding, can effectively reduce battery fragment rate, reduce interconnector specific insulation, reduce the series resistance of battery and assembly, improve the fill factor, curve factor FF of assembly, by reducing the width of interconnector, increase the light-receiving area of battery simultaneously, improve the power stage of assembly.Can substantially not increase on the basis of cost, the assembly of each 60 156mm × 156mm batteries can improve power output 1%, more than about 2W, reduce fragment rate 0.1%, the annual about 2GW of assembly that produces, can at least increase power 20MW, and in 0.7 dollar of every watt of assembly, within 1 year, can take in more than approximately 14,000,000 dollars more.
2, the present invention can: 1, effectively reduce battery fragment rate; 2, reduce interconnector specific insulation, reduce the series resistance of battery and assembly, improve the fill factor, curve factor FF of assembly; 3, reduce the width of interconnector, increase the light-receiving area of battery.
Accompanying drawing explanation
Accompanying drawing 1 is interconnector schematic diagram;
Accompanying drawing 2 is for crystalline silicon solar cell piece is by interconnector connection diagram.
In above accompanying drawing: 1, crystalline silicon solar cell piece; 2, interconnector; 3, conductive adhesive film; 4, main grid line.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described:
Embodiment mono-: a kind of solar module and interconnector thereof
Shown in accompanying drawing 1, a kind of interconnector 2, its cross section is rectangle, and the width of described interconnector 2 is 1.0mm, and thickness is 0.20mm.The material fine silver of described interconnector 2.The specific insulation 1.5 Ω mm of described interconnector 2
2/ m; The yield strength of described interconnector 2 is 45MPa, and tensile strength is 130MPa; The elongation of described interconnector 2 is 15%.
Shown in accompanying drawing 2, a kind of solar module (not shown), described solar module comprises 60 crystalline silicon solar cell pieces 1, all has main grid line 4 on solar cell piece 1, described main grid line 4 is provided with conductive adhesive film 3, is bonded with interconnector 2 on this conductive adhesive film; Described interconnector 2 is referring to shown in accompanying drawing 1, and its cross section is rectangle, and the width of described interconnector 2 is 1.0mm, and thickness is 0.20mm.The material fine silver of described interconnector 2.The specific insulation of described interconnector 2 is less than or equal to 1.5 Ω mm
2/ m; The yield strength of described interconnector 2 is 45MPa, and tensile strength is 130MPa; The elongation of described interconnector 2 is 15%.
In the time making, need to heat make conductive adhesive film 3 so that conductive adhesive film 3 bonds crystalline silicon solar cell piece 1 and interconnector 2.
Embodiment bis-: a kind of solar module and interconnector thereof
Shown in accompanying drawing 1, a kind of interconnector 2, its cross section is rectangle, and the width of described interconnector 2 is 0.8mm, and thickness is 0.35mm.The material fine copper of described interconnector 2.The specific insulation 1.8 Ω mm of described interconnector 2
2/ m; The yield strength of described interconnector 2 is 70MPa, and tensile strength is 145MPa; The elongation of described interconnector 2 is 15%.
Shown in accompanying drawing 2, a kind of solar module (not shown), described solar module comprises 72 crystalline silicon solar cell pieces 1, all has main grid line 4 on solar cell piece 1, described main grid line 4 is provided with conductive adhesive film 3, is bonded with interconnector 2 on this conductive adhesive film; Described interconnector 2 is referring to shown in accompanying drawing 1, and its cross section is rectangle, and the width of described interconnector 2 is 0.8mm, and thickness is 0.35mm.The material fine copper of described interconnector 2.The specific insulation 1.8 Ω mm of described interconnector 2
2/ m; The yield strength of described interconnector 2 is 70MPa, and tensile strength is 145MPa; The elongation of described interconnector 2 is 15%.
In the time making, need to heat make conductive adhesive film 3 so that conductive adhesive film 3 bonds crystalline silicon solar cell piece 1 and interconnector 2.
Above-described embodiment is only explanation technical conceive of the present invention and feature, and its object is to allow person skilled in the art can understand content of the present invention and implement according to this, can not limit the scope of the invention with this.All equivalences that Spirit Essence is done according to the present invention change or modify, within all should being encompassed in protection scope of the present invention.
Claims (6)
1. an interconnector, is characterized in that: the material of described interconnector is conducting metal; The specific insulation of described interconnector is less than or equal to 1.9 Ω mm
2/ m; The yield strength of described interconnector is less than or equal to 90MPa, and meets tensile strength and be more than or equal to 130MPa; The elongation of described interconnector is more than or equal to 15%.
2. interconnector according to claim 1, is characterized in that: described conducting metal is that copper, silver, aluminium, copper are zinc-plated, albronze or Kufil.
3. interconnector according to claim 1 and 2, is characterized in that: the width of described interconnector is 0.8~1.6mm, and thickness is 0.25~0.35mm.
4. a solar module, described solar module comprises multiple crystalline silicon solar cell pieces, has main grid line on this solar cell piece, it is characterized in that: described main grid line is provided with conductive adhesive film, on this conductive adhesive film, is bonded with interconnector; The material of described interconnector is conducting metal; The specific insulation of described interconnector is less than or equal to 1.9 Ω mm
2/ m; The yield strength of described interconnector is less than or equal to 90MPa, and meets tensile strength and be more than or equal to 130MPa; The elongation of described interconnector is more than or equal to 15%.
5. solar module according to claim 4, is characterized in that: described conducting metal is that copper, silver, aluminium, copper are zinc-plated, albronze or Kufil.
6. according to the solar module described in claim 4 or 5, it is characterized in that: the width of described interconnector is 0.8~1.6mm, thickness is 0.25~0.35mm.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210468633.6A CN103811576A (en) | 2012-11-15 | 2012-11-15 | Solar cell module and interconnecting strips thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210468633.6A CN103811576A (en) | 2012-11-15 | 2012-11-15 | Solar cell module and interconnecting strips thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103811576A true CN103811576A (en) | 2014-05-21 |
Family
ID=50708067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210468633.6A Pending CN103811576A (en) | 2012-11-15 | 2012-11-15 | Solar cell module and interconnecting strips thereof |
Country Status (1)
Country | Link |
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CN (1) | CN103811576A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104148758A (en) * | 2014-08-14 | 2014-11-19 | 无锡尚品太阳能电力科技有限公司 | Single-soldering process for silver-bearing thickened solder strip and battery piece |
CN109763153A (en) * | 2019-02-25 | 2019-05-17 | 常州安澜电气有限公司 | A kind of solar battery grid material and its manufacturing process |
-
2012
- 2012-11-15 CN CN201210468633.6A patent/CN103811576A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104148758A (en) * | 2014-08-14 | 2014-11-19 | 无锡尚品太阳能电力科技有限公司 | Single-soldering process for silver-bearing thickened solder strip and battery piece |
CN109763153A (en) * | 2019-02-25 | 2019-05-17 | 常州安澜电气有限公司 | A kind of solar battery grid material and its manufacturing process |
CN109763153B (en) * | 2019-02-25 | 2021-01-22 | 常州安澜电气有限公司 | Solar cell grid electrode material and manufacturing process thereof |
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C06 | Publication | ||
PB01 | Publication | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140521 |