CN205984993U - Perpendicular type semiconductor device's two -sided terminal structure - Google Patents
Perpendicular type semiconductor device's two -sided terminal structure Download PDFInfo
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- CN205984993U CN205984993U CN201620900426.7U CN201620900426U CN205984993U CN 205984993 U CN205984993 U CN 205984993U CN 201620900426 U CN201620900426 U CN 201620900426U CN 205984993 U CN205984993 U CN 205984993U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 230000001413 cellular effect Effects 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000009795 derivation Methods 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 238000005457 optimization Methods 0.000 description 1
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Abstract
The utility model provides a perpendicular type semiconductor device's two -sided terminal structure, perpendicular type semiconductor device is bipolar transistor, thyristor, MOSFET, IGBT, the spin -off device of MOSFET, IGBT derives the device or the thyristor derives the device, two -sided terminal structure includes cellular district, terminal area, negative pole, gate pole and positive pole, the terminal area includes positive terminal and back terminal, positive terminal and back stay thimble wind around the cellular district, negative pole and gate pole deposit are in the front in cellular district, the anodic deposition is in the back in cellular district. The utility model provides a perpendicular type semiconductor device's two -sided terminal structure has increased back terminal structure on traditional positive terminal basis, formed two -sided terminal structure, under the prerequisite that does not increase the terminal area, has improved the whole seal pressure at terminal, has improved the efficiency of terminal structure.
Description
Technical field
This utility model is related to a kind of semiconductor device and in particular to a kind of two-sided terminal of vertical type semiconductor device is tied
Structure.
Background technology
The design of terminal structure is one of key technology of semiconductor device, closely related with the breakdown voltage of device.
When semiconductor device is reverse-biased pressure, the pn-junction extending of device inside causes surface, makes the peak value electric field on surface
Higher than internal, cause punch through generation on surface, meanwhile, when ionization by collision occurs on surface, the hot current-carrying that ionization process produces
Son easily enters passivation layer, is internally formed fixed charge in passivation layer, changes Electric Field Distribution, makes device performance unstable, reliability
Decline.
Terminal technology is to reduce surface field, improve the pressure direct method of terminal, currently for vertical semiconductor device
For part, the structure design of termination environment is concentrated mainly on the front of chip, the generally idiostatic anode in the back side of chip, and end
The pressure potential difference referring mainly between anode and negative electrode at end, because vertical device chip edge generally not exclusively exhausts, because
This, in the edge of chip front surface and the same current potential of bottom anode, with the raising of stress levels, the size of terminal is gradually increased,
In the case that the chip gross area is certain, the area in chip is through-flow area reduces therewith.
And, only in the outermost ring design terminal structure of Silicon Wafer, its overall area accounts for traditional thyristor device
Less than very, and New Type Power Devices such as IGBT device generally adopts multi-chip parallel form, each chip comprises cellular region
And termination environment, such as 6 inch silicon wafer generally make the igbt chip of 60 about, the area that its termination environment is occupied is higher,
Directly affect the flow efficiency of overall wafer.Therefore, reduce the area of termination environment, improve its end use efficiency, be current power device
One of important directions of part technology development.
Utility model content
In order to improve the efficiency of terminal structure, increase the voltage endurance capability in the case of equal area, this utility model provides one
Plant the two-sided terminal structure of vertical type semiconductor device, traditional front terminal-based increased rear end structure, shape
Become two-sided terminal structure, on the premise of not increasing terminal area, improve the overall voltage endurance capability of terminal, improve terminal
The efficiency of structure.
To achieve these goals, this utility model adopts the following technical scheme that：
This utility model provides a kind of two-sided terminal structure of vertical type semiconductor device, described vertical type semiconductor device
For bipolar transistor, IGCT, MOSFET, IGBT, MOSFET derive from device, IGBT derives from device or IGCT derives from device
Part；
Described two-sided terminal structure includes cellular region, termination environment, negative electrode, gate pole and anode；Described termination environment includes front
Terminal and rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and gate deposition are in described unit
The front in born of the same parents area, described anodic deposition is at the back side of described cellular region.
The gate pole of described bipolar transistor and IGCT and quasiconductor directly contact, form ohm and connect after annealed process
Touched electrode.
Described gate pole adopts metal oxide layer-semiconductor structure.
Described negative electrode and gate pole are alternately arranged；
Form Ohm contact electrode after described negative electrode and the annealed process of anode difference.
Described rear end is planar junction termination structure, the planar junction termination structure with floating field ring, the plane with field plate
Junction termination structures, the planar junction termination structure with field plate and field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
Described cellular region adopts SiC, GaN or Ge semiconductor single crystal material to constitute.
This utility model also provides a kind of two-sided terminal structure of vertical type semiconductor device, described vertical semiconductor device
Part is diode, and described two-sided terminal structure is including cellular region, termination environment, negative electrode and anode；
Described termination environment includes front terminal and rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and anode are respectively deposited at institute
State the front and back of cellular region.
Described rear end is planar junction termination structure, the planar junction termination structure with floating field ring, the plane with field plate
Junction termination structures, the planar junction termination structure with field plate and field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
Described cellular region adopts SiC, GaN or Ge semiconductor single crystal material to constitute.
Compared with immediate prior art, the technical scheme that this utility model provides has the advantages that：
1) the utility model proposes rear end structure design, be that front terminal is being pressure and the premise of area not changing
Under, increased the terminal structure design at the back side, form two-sided terminal；This structure rear end design can be designed as a ring,
The multiple terminal structure type such as field plate and its composite structure, does not deposit contradiction in design with front terminal structure, mainly depends on
In pressure parameter requirements and the back process compatibility of device, because anode metal is contracted to active area, front terminal and the back side
Terminal structure is equivalent to be connected between the anode of device and negative electrode, and the pressure of the rear end structure of increase is just presented as device
Overall pressure raising.Therefore, two-sided terminal structure can carry in the case of not changing front active area and termination environment accounting
The entirety of high semiconductor device is pressure, that is, improve the efficiency of its terminal structure；
2) the backside deposition anode metal of vertical type semiconductor device, annealed technique forms the Ohmic contact electricity in whole face
Pole, anode is not joined directly together with rear end, and compared with traditional structure, rear end structure instead of the anode electrode at this；
3) corresponding for front terminal area back anode partial replacement is become terminal structure by this two-sided terminal structure, significantly
Reduce the electric current at this to flow into and carrier injection, reduce the even property of current unevenness of active-surface cellular, improve device
Overall sound state uniformity.
Brief description
Fig. 1 is the two-sided terminal structure figure of vertical type semiconductor device in this utility model embodiment 1；
Wherein, 1- negative electrode, 2- gate pole, 3- anode, 4- front terminal, 5- rear end, 6- cellular region.
Specific embodiment
Below in conjunction with the accompanying drawings this utility model is described in further detail.
For vertical type semiconductor device, the structure design main purpose of termination environment is to reduce outside cellular area edge
The electric field of material surface, it is to avoid generating device edge surface electric field is too high and partial breakdown, current vertical semiconductor
The usual of device only has terminal structure in frontal design.Because the overall dimensions of chip are limited, terminal area reduces and is conducive to
The increase of source region area, active area is the main region of device current break-make, reduces terminal area, the accounting of raising active area is
Improve device current characteristic directly effective method.But the design for many years through correlational study scholar and optimization, device front
Terminal structure has moved closer to theoretical limit, room for promotion very little.This utility model is in traditional back anode metal structure
On the basis of increased rear end structure design, anode electrode is contracted to active area.On the one hand termination environment face can not changed
The entirety improving semiconductor device in the case of long-pending is pressure, on the other hand reduces the carrier of device cellular area edge part not
Uniformity, improves the sound state uniformity of device.Because device is when reverse-biased, depletion region is by the reverse-biased main PN junction in front gradually
Extend downwards, only when depletion region expands to rear end structure, this structure just can play and share partly pressure, raising entirety
Pressure effect.
The two-sided terminal structure of the vertical type semiconductor device that this utility model provides, in traditional front terminal-based
Increased rear end structure, define two-sided terminal structure, on the premise of not increasing terminal area, improve the whole of terminal
Body voltage endurance capability, improves the efficiency of terminal structure.
Embodiment 1
With bipolar transistor, IGCT, MOSFET, IGBT, MOSFET derive from device, IGBT derives from device or IGCT
As a example deriving from the vertical type semiconductor devices such as device, the two-sided terminal structure of vertical type semiconductor device is described.
Two-sided terminal structure includes cellular region, termination environment, negative electrode, gate pole and anode；Described termination environment includes front terminal
And rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and gate deposition are in described unit
The front in born of the same parents area, described anodic deposition is at the back side of described cellular region.
The gate pole of described bipolar transistor and IGCT and quasiconductor directly contact, form ohm and connect after annealed process
Touched electrode.
Described gate pole adopts metal oxide layer-semiconductor structure.
Described negative electrode and gate pole are alternately arranged；
Form Ohm contact electrode after described negative electrode and the annealed process of anode difference.
Described rear end is planar junction termination structure, the planar junction termination structure with floating field ring, the plane with field plate
Junction termination structures, the planar junction termination structure with field plate and field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
Described cellular region adopts SiC, GaN or Ge semiconductor single crystal material to constitute.
Termination environment using the utility model proposes two-sided terminal structure, can increase on the premise of not increasing terminal area
Plus the withstanding voltage of vertical type semiconductor device.
Embodiment 2
The two-sided terminal structure of vertical type semiconductor device, with vertical type semiconductor device as diode, is described.
Described two-sided terminal structure is including cellular region, termination environment, negative electrode and anode；
Described termination environment includes front terminal and rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and anode are respectively deposited at institute
State the front and back of cellular region.
Described rear end is planar junction termination structure, the planar junction termination structure with floating field ring, the plane with field plate
Junction termination structures, the planar junction termination structure with field plate and field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
Described cellular region adopts SiC, GaN or Ge semiconductor single crystal material to constitute.
Termination environment using the utility model proposes two-sided terminal structure, can increase on the premise of not increasing terminal area
Plus the withstanding voltage of diode.
Finally it should be noted that：Above example is only in order to illustrate the technical solution of the utility model rather than it is limited
System, those of ordinary skill in the art still can be carried out to specific embodiment of the present utility model with reference to above-described embodiment
Modification or equivalent, these without departing from any modification of this utility model spirit and scope or equivalent, all in Shen
Within claims of the present utility model that please be pending.
Claims (10)
1. a kind of two-sided terminal structure of vertical type semiconductor device is it is characterised in that described two-sided terminal structure includes cellular
Area, termination environment, negative electrode, gate pole and anode；
Described termination environment includes front terminal and rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and gate deposition are in described cellular region
Front, described anodic deposition is at the back side of described cellular region.
2. the two-sided terminal structure of vertical type semiconductor device according to claim 1 is it is characterised in that described vertical-type
Semiconductor device is bipolar transistor, IGCT, MOSFET, IGBT, MOSFET derivation device, IGBT derive from device or brilliant lock
Pipe derives from device.
3. the two-sided terminal structure of vertical type semiconductor device according to claim 2 is it is characterised in that described ambipolar
The gate pole of transistor and IGCT and quasiconductor directly contact, form Ohm contact electrode after annealed process.
4. the two-sided terminal structure of vertical type semiconductor device according to claim 3 is it is characterised in that described gate pole is adopted
With metal oxide layer-semiconductor structure.
5. vertical type semiconductor device according to claim 1 two-sided terminal structure it is characterised in that described negative electrode and
Gate pole is alternately arranged；
Form Ohm contact electrode after described negative electrode and the annealed process of anode difference.
6. the two-sided terminal structure of vertical type semiconductor device according to claim 1 is it is characterised in that the described back side is whole
Hold for planar junction termination structure, the planar junction termination structure with floating field ring, the planar junction termination structure with field plate, band field plate with
The planar junction termination structure of field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
7. the two-sided terminal structure of vertical type semiconductor device according to claim 1 is it is characterised in that described cellular region
Constituted using SiC, GaN or Ge semiconductor single crystal material.
8. the two-sided terminal structure of a kind of vertical type semiconductor device, described vertical type semiconductor device is diode, its feature
It is, described two-sided terminal structure is including cellular region, termination environment, negative electrode and anode；
Described termination environment includes front terminal and rear end；
Described front terminal and rear end are looped around around described cellular region, and described negative electrode and anode are respectively deposited at described unit
The front and back in born of the same parents area.
9. the two-sided terminal structure of vertical type semiconductor device according to claim 8 is it is characterised in that the described back side is whole
Hold for planar junction termination structure, the planar junction termination structure with floating field ring, the planar junction termination structure with field plate, band field plate with
The planar junction termination structure of field ring, knot termination extension structure or semiconducting insulation polysilicon structure.
10. the two-sided terminal structure of vertical type semiconductor device according to claim 8 is it is characterised in that described cellular
Area adopts SiC, GaN or Ge semiconductor single crystal material to constitute.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620900426.7U CN205984993U (en) | 2016-08-18 | 2016-08-18 | Perpendicular type semiconductor device's two -sided terminal structure |
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| CN201620900426.7U CN205984993U (en) | 2016-08-18 | 2016-08-18 | Perpendicular type semiconductor device's two -sided terminal structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505092A (en) * | 2016-08-18 | 2017-03-15 | 全球能源互联网研究院 | A kind of two-sided terminal structure of vertical type semiconductor device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505092A (en) * | 2016-08-18 | 2017-03-15 | 全球能源互联网研究院 | A kind of two-sided terminal structure of vertical type semiconductor device |
| CN106505092B (en) * | 2016-08-18 | 2024-05-14 | 全球能源互联网研究院 | Double-sided terminal structure of vertical semiconductor device |
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