CN207967001U - A kind of terminal structure of with groove - Google Patents
A kind of terminal structure of with groove Download PDFInfo
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- CN207967001U CN207967001U CN201820487063.8U CN201820487063U CN207967001U CN 207967001 U CN207967001 U CN 207967001U CN 201820487063 U CN201820487063 U CN 201820487063U CN 207967001 U CN207967001 U CN 207967001U
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- conduction type
- type
- terminal structure
- well region
- groove
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- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
- 229910052760 oxygen Inorganic materials 0.000 claims description 18
- 239000001301 oxygen Substances 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000000407 epitaxy Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
Abstract
The utility model belongs to the manufacturing technology field of semiconductor devices, it is related to a kind of terminal structure of with groove, include the collector electrode metal for drawing collector and the first conductive type epitaxial layer above the collector electrode metal, several the second conduction type field limiting rings of the second conduction type well region are set there are one the second conduction type well region and surround on first conductive type epitaxial layer surface, it is characterized in that, several grooves parallel to each other are set in the second conduction type well region, the grid oxide layer of the conductive polycrystalline silicon and the package conductive polycrystalline silicon positioned at center floating is equipped in the groove；The utility model increases the potential at main knot by increasing groove structure in well region, reduce the number of field limiting ring, and then reduce device terminal width, the utility model is while ensureing device voltage endurance capability, reduce device terminal area, and then the area of entire device is reduced, element manufacturing cost is reduced, cost performance is improved.
Description
Technical field
The utility model is related to a kind of terminal structure of semiconductor devices, the terminal structure of specifically a kind of with groove belongs to
In the manufacturing technology field of semiconductor devices.
Background technology
In power semiconductor field, the design of terminal and the pressure resistance of device and reliability are closely bound up, and terminal is born
Voltage can be divided into lateral voltage and longitudinal voliage, determine longitudinal voliage principal element be device epitaxial layers thickness, determine
The principal element of lateral voltage is exactly device terminal width, and what the terminal structure of existing device was all made of at present is field limiting ring structure
Terminal the second conduction type is equipped in the collector electrode metal as shown in Fig. 2, by taking the terminal structure of IGBT device as an example
Epitaxial layer is equipped with the first conductive type buffer layer on second conductive type epitaxial layer, slow in first conduction type
It rushes layer and is equipped with the first conductive type epitaxial layer, set there are one the second conduction type on first conductive type epitaxial layer surface
Well region and several the second conduction type field limiting rings, the second conduction type field limiting ring are located at the periphery of terminal structure, and
The second conduction type well region is surrounded, potential determines device terminal structure at the main knot 10 at the second conductive type of trap area edge
Initial potential, initial potential is higher, terminal structure need field limiting ring number it is fewer, the width of terminal structure is got over
Narrow, the potential at the main knot 10 of current existing terminal structure is smaller, therefore laterally pressure resistance all relies on field limiting ring to terminal substantially,
For high-voltage product, it is necessary to increase field limiting ring to improve pressure resistance, considerably increase the area of device terminal so that active region area
Reduce, while increasing production cost, in addition, laterally pressure-resistant efficiency of this terminal structure close to several field limiting rings of active area
It is relatively low.
Invention content
The purpose of the utility model is to overcome the deficiencies in the prior art, provide a kind of terminal structure of with groove,
Increase the potential at main knot by increasing groove structure in well region, reduces the number of field limiting ring, and then reduce device terminal
Width, the utility model reduce device terminal area, and then reduce entire device while ensureing device voltage endurance capability
Area, reduce element manufacturing cost, improve cost performance.
For the above technical purpose of realization, the technical solution of the utility model is：A kind of terminal structure of with groove, including with
In the collector electrode metal and the first conductive type epitaxial layer above the collector electrode metal of drawing collector, described the
One conductive type epitaxial layer surface sets there are one the second conduction type well region and surrounds the several of the second conduction type well region
A second conduction type field limiting ring, which is characterized in that it is parallel to each other in the second conduction type well region several to be arranged
Groove is equipped with the grid oxide layer of the conductive polycrystalline silicon and the package conductive polycrystalline silicon positioned at center floating in the groove.
Further, it is equipped with field oxygen layer on first conductive type epitaxial layer, is equipped in the field oxygen layer several
A field plate, one of field plate can be electrically connected by through-hole with the second conduction type well region, and floating state is may be alternatively provided as,
Remaining field plate can be electrically connected by through-hole with the second conduction type field limiting ring, and floating state is may be alternatively provided as.
Further, the second conduction type well region and the second conduction type field limiting ring are from first conduction type
Epi-layer surface extends to inside it, and active area and termination environment of the second conduction type well region across device.
Further, the side of active area is provided with emitter metal in termination environment, the emitter metal passes through
Through-hole in the oxygen layer of field is electrically connected with the second conduction type well region.
Further, passivation layer is covered on the termination environment surface.
Further, the second conduction type field limiting ring can be not provided with, and the field plate can not also be arranged.
Further, the depth of the groove can be more than the depth of the second conduction type well region.
Further, the terminal structure includes the terminal structure and p-type power semiconductor device of N-type power semiconductor
The terminal structure of part, for the terminal structure of N-type power semiconductor, first conduction type is N-type, and described second leads
Electric type is p-type, and for the terminal structure of P-type semiconductor device, the first conduction type is p-type, and the second conduction type is N-type.
Further, the device of the terminal structure of the with groove includes IGBT device and MOSFET element.
The utility model has the following advantages：
1）Compared with conventional terminal structure, the utility model includes to lead by the way that several are arranged in the second conduction type well region
The groove of electric polysilicon so that the initial potential at the second main knot of conductive type of trap area edge significantly increases, in device pressure resistance phase
With in the case of, the number of field limiting ring setting can be reduced, or even be not provided with, and the width of terminal structure is substantially reduced, when
One timing of chip area, terminal structure occupied area reduce, and active area occupied area increases, and device on-resistance can reduce；When
Active region area is constant, and terminal width reduces so that entire chip area reduces, and reduces production cost, improves chip
Cost performance；
2）The manufacturing process of the utility model terminal structure is compatible with prior art.
Description of the drawings
Attached drawing is to be used to provide a further understanding of the present invention, an and part for constitution instruction, and following
Specific implementation mode be used to explain the utility model together, but do not constitute limitations of the present invention.In the accompanying drawings：
Fig. 1 is the overlooking structure diagram of power semiconductor.
Fig. 2 is the structural schematic diagram of conventional terminal structure.
Fig. 3 is the structural schematic diagram of 1 with groove terminal structure of the utility model embodiment.
Fig. 4 is the structural schematic diagram of 2 with groove terminal structure of the utility model embodiment.
Fig. 5 is the structural schematic diagram of 3 with groove terminal structure of the utility model embodiment.
Fig. 6 is the utility model structure（Fig. 3）With traditional structure（Fig. 2）Surface potential distribution map when breakdown.
Reference sign：001-active area；002-termination environment；1-collector electrode metal；2-the second conduction type collection
Electrode district；3-the first conductive type buffer layer；4-the first conductive type epitaxial layer；5-the second conduction type field limiting ring；6—
Second conduction type well region；7-grooves；8-conductive polycrystalline silicons；9-grid oxide layers；10-main knots；11-emitter metals；12—
Field plate；13-field oxygen layer；14-passivation layers.
Specific implementation mode
With reference to specific drawings and examples, the utility model is described in further detail.
The utility model embodiment not limited to the following, in the following description each figure of institute's reference be to be able to pair
The content of the utility model is understood and is arranged that is, the utility model is not limited to the device architecture that each figure is illustrated, and both fits
For IGBT device, and it is suitable for MOSFET element.
As shown in Figure 1, for semiconductor devices overlooking structure diagram, the semiconductor devices include active area 001 and
Surround the termination environment 002 of the active area 001.
As shown in figure 3, embodiment 1 is with IGBT device, and the first conduction type is N-type, and the second conduction type is that p-type is
Example, a kind of terminal structure of with groove includes the collector electrode metal 1 for drawing collector, in the collector electrode metal 1 according to
It is secondary to be equipped with p-type collector area 2, the N-type buffer layer 3 on the p-type collector area 2 and on the N-type buffer layer 3
N-type epitaxy layer 4 sets there are one P type trap zone 6 and surrounds several p-types of the P type trap zone 6 on 4 surface of the N-type epitaxy layer
Field limiting ring 5, the p-type field limiting ring 5 are located at the periphery of terminal structure, and the P type trap zone 6 and p-type field limiting ring 5 are from the N-type
4 surface of epitaxial layer extends to inside it, and active area 001 and termination environment 002 of the P type trap zone 6 across device, and feature exists
In in the P type trap zone 6, there are six the grooves 7 being mutually parallel for setting, and the depth of groove 7 is less than the depth of P type trap zone 6
Degree is equipped with the conductive polycrystalline silicon 8 for being located at center floating and the grid oxide layer for wrapping up the conductive polycrystalline silicon 8 in the groove 7
9；
The width of groove 7 is about 1 μm in the present embodiment 1, and 5 μm are spaced about between each groove 7；
It is equipped with field oxygen layer 13 in the N-type epitaxy layer 4, several field plates 12 are equipped in the field oxygen layer 13, wherein
One field plate 12 is electrically connected by through-hole with the P type trap zone 6, and remaining field plate 12 is electrically connected by through-hole and the p-type field limiting ring 5
It connects, the side of active area 001 is provided with emitter metal 11 in the termination environment 002, the emitter metal 11 passes through
Through-hole in the oxygen layer 13 of field is electrically connected with the P type trap zone 6, and passivation layer 14 is covered on 002 surface of the termination environment；
If by taking MOSFET element as an example, N-type substrate is provided only between collector electrode metal 1 and N-type epitaxy layer 4.
As shown in figure 4, embodiment 2 is with IGBT device, and the first conduction type is N-type, and the second conduction type is that p-type is
Example, a P type trap zone 6 is provided only on 4 surface of the N-type epitaxy layer, is not provided with p-type field limiting ring 6, and the P type trap zone 6 is from described
4 surface of N-type epitaxy layer extends to inside it, and active area 001 and termination environment 002 of the P type trap zone 6 across device, special
Sign is, in the P type trap zone 6, is provided with 20 grooves being mutually parallel 7, and the depth of groove 7 is less than P type trap zone 6
Depth, the grid of conductive polycrystalline silicon 8 and package positioned at center the floating conductive polycrystalline silicon 8 are equipped in the groove 7
Oxygen layer 9；
It is equipped with field oxygen layer 13 in the N-type epitaxy layer 4, is set in the field oxygen layer 13 there are one field plate 12, the field
Plate 12 is electrically connected by through-hole with the P type trap zone 6, and the side of active area 001 is provided with transmitting in the termination environment 002
Pole metal 11, the emitter metal 11 is electrically connected by the through-hole in field oxygen layer 13 with the P type trap zone 6, in the terminal
002 surface of area is covered with passivation layer 14.
As shown in figure 5, embodiment 3 is with IGBT device, and the first conduction type is N-type, and the second conduction type is that p-type is
Example, a P type trap zone 6 is provided only on 4 surface of the N-type epitaxy layer, is not provided with p-type field limiting ring 6, and the P type trap zone 6 is from described
4 surface of N-type epitaxy layer extends to inside it, and active area 001 and termination environment 002 of the P type trap zone 6 across device, special
Sign is, in the P type trap zone 6, is provided with multiple grooves 7 being mutually parallel, and the depth of groove 7 is less than P type trap zone 6
Depth is equipped with the conductive polycrystalline silicon 8 for being located at center floating and the grid oxygen for wrapping up the conductive polycrystalline silicon 8 in the groove 7
Layer 9.
In the present embodiment, it is equipped with field oxygen layer 13 in the N-type epitaxy layer 4, field plate is not provided in the field oxygen layer 13
12, the side of active area 001 is provided with emitter metal 11 in the termination environment 002, the emitter metal 11 passes through
Through-hole in the oxygen layer 13 of field is electrically connected with the P type trap zone 6, and passivation layer 14 is covered on 002 surface of the termination environment.
As shown in fig. 6, being the utility model embodiment 1 and traditional structure（Such as Fig. 2）Surface potential in device breakdown
Distribution map.Six parallel grooves 7 are provided in embodiment 1 in the P type trap zone 6, as seen from the figure, at the main knot of traditional structure 10
Potential is 0V, and the potential at 1 main knot 10 of the utility model embodiment is about 200V, it means that the field of the utility model structure
The pressure resistance that limit ring is subjected to will lack 200V compared to the field limiting ring of traditional structure, so 1 structure of the utility model embodiment
The field limiting ring of traditional structure is 2 few in number ratio Fig. 2 of field limiting ring, and therefore, in the case where bearing identical pressure resistance, this practicality is new
Type structure can be substantially reduced the width of terminal structure, and then reduce production cost.
The utility model and embodiments thereof are described above, description is not limiting, shown in attached drawing
Also it is one of the embodiment of the utility model, practical structures are not limited thereto.All in all if this field it is common
Technical staff is enlightened by it, without deviating from the purpose of the present invention, is not inventively designed and the skill
The similar frame mode of art scheme and embodiment, all should belong to the protection range of the utility model.
Claims (9)
1. a kind of terminal structure of with groove includes the collector electrode metal for drawing collector（1）And it is located at the collector
Metal（1）First conductive type epitaxial layer of top（4）, in first conductive type epitaxial layer（4）Surface sets that there are one the
Two conduction type well regions（6）And surround the second conduction type well region（6）Several the second conduction type field limiting rings（5）,
It is characterized in that, in the second conduction type well region（6）Interior several grooves parallel to each other of setting（7）, in the groove
（7）The interior conductive polycrystalline silicon being equipped with positioned at center floating（8）And the package conductive polycrystalline silicon（8）Grid oxide layer（9）.
2. a kind of terminal structure of with groove according to claim 1, which is characterized in that outside first conduction type
Prolong layer（4）It is equipped with field oxygen layer（13）, in the field oxygen layer（13）It is equipped with several field plates（12）, one of field plate（12）
Through-hole and the second conduction type well region can be passed through（6）Electrical connection, may be alternatively provided as floating state, remaining field plate（12）It can lead to
Cross through-hole and the second conduction type field limiting ring（5）Electrical connection, may be alternatively provided as floating state.
3. a kind of terminal structure of with groove according to claim 1, which is characterized in that the second conduction type well region
（6）And the second conduction type field limiting ring（5）From first conductive type epitaxial layer（4）Surface extends to inside it, and institute
State the second conduction type well region（6）Across the active area of device（001）The termination environment and（002）.
4. a kind of terminal structure of with groove according to claim 1, which is characterized in that in termination environment（002）It is close to have
Source region（001）Side be provided with emitter metal（11）, the emitter metal（11）Pass through field oxygen layer（13）Interior through-hole
With the second conduction type well region（6）Electrical connection.
5. a kind of terminal structure of with groove according to claim 1, which is characterized in that in the termination environment（002）Table
Face is covered with passivation layer（14）.
6. a kind of terminal structure of with groove according to claim 1, which is characterized in that second conduction type field limits
Ring（5）It can be not provided with, the field plate（12）It can not also be arranged.
7. a kind of terminal structure of with groove according to claim 1, which is characterized in that the groove（7）Depth can
More than the second conduction type well region（6）Depth.
8. a kind of terminal structure of with groove according to claim 1, which is characterized in that the terminal structure includes N-type
The terminal structure of the terminal structure and p-type power semiconductor of power semiconductor, for N-type power semiconductor
Terminal structure, first conduction type are N-type, and second conduction type is p-type, for the terminal of P-type semiconductor device
Structure, the first conduction type are p-type, and the second conduction type is N-type.
9. a kind of terminal structure of with groove according to claim 1, which is characterized in that the terminal structure of the with groove
Device include IGBT device and MOSFET element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820487063.8U CN207967001U (en) | 2018-04-08 | 2018-04-08 | A kind of terminal structure of with groove |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820487063.8U CN207967001U (en) | 2018-04-08 | 2018-04-08 | A kind of terminal structure of with groove |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207967001U true CN207967001U (en) | 2018-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201820487063.8U Withdrawn - After Issue CN207967001U (en) | 2018-04-08 | 2018-04-08 | A kind of terminal structure of with groove |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321187A (en) * | 2018-04-08 | 2018-07-24 | 无锡新洁能股份有限公司 | A kind of terminal structure of with groove |
-
2018
- 2018-04-08 CN CN201820487063.8U patent/CN207967001U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321187A (en) * | 2018-04-08 | 2018-07-24 | 无锡新洁能股份有限公司 | A kind of terminal structure of with groove |
| CN108321187B (en) * | 2018-04-08 | 2024-05-10 | 无锡新洁能股份有限公司 | Terminal structure with groove |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20181012 Effective date of abandoning: 20240510 |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20181012 Effective date of abandoning: 20240510 |