CN106784017A - A kind of vertical current regulative diode device of resistance to high-breakdown-voltage - Google Patents
A kind of vertical current regulative diode device of resistance to high-breakdown-voltage Download PDFInfo
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- CN106784017A CN106784017A CN201611239889.4A CN201611239889A CN106784017A CN 106784017 A CN106784017 A CN 106784017A CN 201611239889 A CN201611239889 A CN 201611239889A CN 106784017 A CN106784017 A CN 106784017A
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- voltage
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- -1 phosphonium ion Chemical class 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000001413 cellular effect Effects 0.000 claims description 3
- 230000005465 channeling Effects 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 11
- 238000005457 optimization Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
The invention provides a kind of vertical current regulative diode device of resistance to high-breakdown-voltage, by exhausting channel conduction, the parameter such as optimization epitaxial thickness and concentration, channel concentration, JFET section lengths, grid oxide layer thickness, and terminal structure is designed.The good current regulator diode of constant-current characteristics is invented, pinch-off voltage is less than 5V, and breakdown voltage is about 250V, and electric current is about 1.5 × 10‑5 A/m。
Description
Technical field
The present invention relates to a kind of current regulator diode device, more particularly to a kind of vertical-type constant current of resistance to high-breakdown-voltage
Diode component.
Background technology
Current regulator diode（Current Regulator Diode, CRD）It is a kind of semiconductor constant current device, can be one
A constant current value [1] is kept in fixed operating voltage range.It has motional impedance very high, good constant current
Can, and it is cheap, easy to use, therefore it is widely applied to the guarantor of constant-current source, source of stable pressure, amplifier and electronic instrument
In protection circuit.The negative temperature characteristic of current regulator diode is solved during LED drives because electric current steeply rises caused knot well
The problems such as temperature rise, lost of life.At present, the output current of current regulator diode can directly drive between the mA of several mA to tens
Load, and device volume is small, reliability is high.But, the breakdown voltage of current regulator diode is relatively low, is commonly 30 ~ 100V, can provide
Constant current it is relatively low.
It can be seen that, the breakdown voltage for improving current regulator diode is key technology, is with a wide range of applications.
The content of the invention
Technical problem underlying to be solved by this invention is to provide a kind of vertical current regulative diode of resistance to high-breakdown-voltage
Device, can bring up to 200V by the breakdown voltage of current regulator diode.
In order to solve the above-mentioned technical problem, the invention provides a kind of vertical current regulative diode device of resistance to high-breakdown-voltage
Part, including：
By exhausting channel conduction, raceway groove is exhausted after thermal diffusion forms p-well, injected by phosphonium ion shallow-layer and realized；In cellular
Middle diffusion P type trap zone surface injection phosphonium ion, and compensate to form thin layer raceway groove with P type trap zone, adjust Channeling implantation dosage and energy
Amount, it is possible to achieve relatively low pinch-off voltage and preferable constant current ability；The dosage and diffusion P of phosphonium ion are injected by adjusting ditch
The distance between type well region, can make channel region compared with elder generation of JFET areas pinch off, and pinch-off voltage is controlled in below 5V；After raceway groove pinch off,
Carrier velocity saturation, the highfield that area is depleted after arrival pinch-off point sweeps N-type heavily doped region, and electric current is not with voltage increase
Increase, it is possible to achieve preferable constant current ability.
It can be seen that, the formation of conducting channel substantially reduces the pinch-off voltage of current regulator diode, realizes depletion type MOS and leads
Electricity, and preferably constant current ability and breakdown voltage higher.The big I of device current injects phosphonium ion agent by adjusting ditch
Amount and channel length are adjusted, and device electric breakdown strength can be adjusted by adjusting extension concentration and thickness.
Compared to prior art, technical scheme possesses following beneficial effect：The invention provides a kind of resistance to height
The vertical current regulative diode device of breakdown voltage, by exhausting channel conduction, successful design goes out a pinch-off voltage less than 5V,
Breakdown voltage is about 250V, and electric current is about 1.5 × 105A/ μm, the good current regulator diode of constant-current characteristics.
Brief description of the drawings
Fig. 1 is the structural representation of device of the present invention；
Fig. 2 is device under different epitaxial thicknessesI-VPerformance plot；
Fig. 3 is deviceI-VPerformance plot.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
With reference to Fig. 1, a kind of vertical current regulative diode device of resistance to high-breakdown-voltage, including：
By exhausting channel conduction, raceway groove is exhausted after thermal diffusion forms p-well, injected by phosphonium ion shallow-layer and realized；In cellular
Middle diffusion P type trap zone surface injection phosphonium ion, and compensate to form thin layer raceway groove with P type trap zone, adjust Channeling implantation dosage and energy
Amount, it is possible to achieve relatively low pinch-off voltage and preferable constant current ability；The dosage and diffusion P of phosphonium ion are injected by adjusting ditch
The distance between type well region, can make channel region compared with elder generation of JFET areas pinch off, and pinch-off voltage is controlled in below 5V；After raceway groove pinch off,
Carrier velocity saturation, the highfield that area is depleted after arrival pinch-off point sweeps N-type heavily doped region, and electric current is not with voltage increase
Increase, it is possible to achieve preferable constant current ability.
It can be seen that, the formation of conducting channel substantially reduces the pinch-off voltage of current regulator diode, realizes depletion type MOS and leads
Electricity, and preferably constant current ability and breakdown voltage higher.The big I of device current injects phosphonium ion agent by adjusting ditch
Amount and channel length are adjusted, and device electric breakdown strength can be adjusted by adjusting extension concentration and thickness.
By TSUPREM4 and MEDICI simulation softwares, to vertical current regulative diode structure cell as shown in Figure 1
Carry out technique and the emulation of device electrology characteristic.
Extension concentration is 8 × 1014 cm-3When, the I-V characteristics to device under different epitaxial thicknesses are compared, as a result
As shown in Fig. 2.Epitaxial thickness is followed successively by 22,24,26 μm, pressure-resistant to be followed successively by 266,286,300V, and size of current is 1.45 ×
10- 5~1.5×10- 5A/μm.Generally, in the case of other conditions identical, extension is thickened, pressure-resistant to have increased, and extension
The increase of thickness has little to no effect to device I-V curve linear area and constant current zone properties.
When epitaxial thickness is 20 μm, the I-V characteristics to device under not homepitaxy concentration are compared, as a result such as Fig. 3 institutes
Show.Extension concentration is followed successively by 5 × 1014, 8 × 1014, 1 × 1015 cm-3.As can be seen that under identical epitaxial thickness, extension concentration is got over
Greatly, it is pressure-resistant smaller；Meanwhile, as extension concentration increases, the resistance of drift region reduces, the increase of Constant Electric Current flow valuve, and linear zone
The reduction of resistance causes pinch-off voltage also to decrease.Therefore, the selection to extension concentration should consider pressure-resistant, constant-current characteristics
And the aspect factor of pinch-off voltage 3.
In the present embodiment, a kind of vertical current regulative diode device of resistance to high-breakdown-voltage can be by exhausting ditch
The conductive breakdown voltage for improving current regulator diode in road.
The above, only present pre-ferred embodiments do not limit the scope of present invention implementation, skill under this invention with this
The equivalence changes that art scheme and description are made and modification, should all belong to the scope that the present invention covers.
Claims (1)
1. a kind of vertical current regulative diode device of resistance to high-breakdown-voltage, it is characterised in that including：By exhausting channel conduction,
Raceway groove is exhausted after thermal diffusion forms p-well, is injected by phosphonium ion shallow-layer and realized；The injection of P type trap zone surface is spread in cellular
Phosphonium ion, and compensate to form thin layer raceway groove with P type trap zone, adjust Channeling implantation dosage and energy, it is possible to achieve relatively low pinch off
Voltage and preferable constant current ability；Dosage and diffusion the distance between P type trap zone of phosphonium ion are injected by adjusting ditch, can be with
Make channel region compared with elder generation of JFET areas pinch off, pinch-off voltage is controlled in below 5V；After raceway groove pinch off, carrier velocity saturation reaches folder
The highfield that area is depleted after breakpoint sweeps N-type heavily doped region, and electric current does not increase and increases with voltage, it is possible to achieve preferably permanent
Stream ability.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611239889.4A CN106784017A (en) | 2016-12-29 | 2016-12-29 | A kind of vertical current regulative diode device of resistance to high-breakdown-voltage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611239889.4A CN106784017A (en) | 2016-12-29 | 2016-12-29 | A kind of vertical current regulative diode device of resistance to high-breakdown-voltage |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106784017A true CN106784017A (en) | 2017-05-31 |
Family
ID=58923258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611239889.4A Pending CN106784017A (en) | 2016-12-29 | 2016-12-29 | A kind of vertical current regulative diode device of resistance to high-breakdown-voltage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106784017A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491889A (en) * | 2019-09-17 | 2019-11-22 | 成都矽能科技有限公司 | A kind of SOI transverse direction current regulator diode and its manufacturing method |
| CN110518064A (en) * | 2019-09-06 | 2019-11-29 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110534581A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
-
2016
- 2016-12-29 CN CN201611239889.4A patent/CN106784017A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110518064A (en) * | 2019-09-06 | 2019-11-29 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110534581A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of semiconductor devices and its manufacturing method |
| CN110518064B (en) * | 2019-09-06 | 2023-04-25 | 电子科技大学 | Semiconductor device and manufacturing method thereof |
| CN110491889A (en) * | 2019-09-17 | 2019-11-22 | 成都矽能科技有限公司 | A kind of SOI transverse direction current regulator diode and its manufacturing method |
| CN110491889B (en) * | 2019-09-17 | 2024-03-29 | 成都矽能科技有限公司 | SOI transverse constant current diode and manufacturing method thereof |
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Application publication date: 20170531 |