CN106252390A - A kind of groove field limiting ring composite terminal structure and preparation method thereof - Google Patents
A kind of groove field limiting ring composite terminal structure and preparation method thereof Download PDFInfo
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- CN106252390A CN106252390A CN201610831545.6A CN201610831545A CN106252390A CN 106252390 A CN106252390 A CN 106252390A CN 201610831545 A CN201610831545 A CN 201610831545A CN 106252390 A CN106252390 A CN 106252390A
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- 239000002131 composite material Substances 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000002161 passivation Methods 0.000 claims abstract description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 238000001259 photo etching Methods 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 238000000637 aluminium metallisation Methods 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 5
- 238000005538 encapsulation Methods 0.000 claims description 4
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 238000005275 alloying Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000001947 vapour-phase growth Methods 0.000 claims description 3
- 238000004857 zone melting Methods 0.000 claims description 3
- 238000000280 densification Methods 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 2
- 229920005591 polysilicon Polymers 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000010992 reflux Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 238000011084 recovery Methods 0.000 description 29
- 230000015556 catabolic process Effects 0.000 description 26
- 230000005684 electric field Effects 0.000 description 20
- 238000009826 distribution Methods 0.000 description 16
- 210000003127 knee Anatomy 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 2
- 239000010956 nickel silver Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 238000001727 in vivo Methods 0.000 description 1
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- 238000001465 metallisation Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Power Engineering (AREA)
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Abstract
The invention discloses a kind of groove field limiting ring composite terminal structure, include the n that source region and termination environment, active area and termination environment are common‑District connects downwards n field stop layer, and connecting below n field stop layer has n+Cathode chamber and negative electrode aluminum electrode thereof；In active area, n‑District has connected up p+Anode region and anode aluminum electrode；In the termination region, n‑One section of p that upwards region with active region contact, district is to increase+Resistance area, with this p+Resistance area is arranged at intervals with a groove, and this beneath trenches is provided with the p that multiple ring spacing does not waits, ring width is equal+Field limiting ring, is provided with a n in this beneath trenches outermost+Cut-off ring, is filled with passivation layer in groove and extends to p+The top of resistance area, this passivation layer connects with the anode aluminum electrode of active area.The invention also discloses the preparation method of above-mentioned groove field limiting ring composite terminal structure.Present configuration is simple, good reliability；Preparation process concision and compact, it is simple to promote.
Description
Technical field
The invention belongs to power semiconductor device technical field, it is adaptable to high-voltage high-speed soft-recovery diode, be specifically related to
A kind of groove-field limiting ring composite terminal structure, the invention still further relates to the preparation side of this kind of groove-field limiting ring composite terminal structure
Method.
Background technology
Due to the fast development of high voltage gate dielectric bipolar transistor (IGBT) module, the quick soft-recovery to wherein afterflow
The performance requirement of diode (FSRD) is more and more higher, and not requiring nothing more than FSRD has high pressure, low-loss, quick and soft the most extensive
Multiple characteristic, and have high reliability and low cost.
High pressure all closely related with the design of terminal with high reliability.In order to be applicable to module encapsulation, generally use field
The plane terminal structures such as plate, field limiting ring and field plate are compound with field limiting ring make square chip.But work as the breakdown voltage of device relatively
Gao Shi, uses these terminals that the area of chip can be caused to dramatically increase, and effective rate of utilization declines.Although passing through the excellent of terminal parameter
Change design, it is possible to when avoiding reversely ending, peak value electric field punctures in terminal end surface.But during Reverse recovery, due to additional
Backward voltage extraction n-During the hole in district, p can be compensated+The part acceptor doping of anode region, causes high electric field break-through to termination environment table
Face, causes terminal that low punch-through breakdown occurs.Additionally, the intersection at active area Yu termination environment can produce current convergence phenomenon, lead
Cause device local temperature to raise and lost efficacy.Therefore, above-mentioned problem proposes huge challenge for the research and development of high pressure FSRD.
Summary of the invention
It is an object of the invention to provide a kind of groove-field limiting ring composite terminal structure, the high pressure solving prior art is fast
Speed soft-recovery diode (FSRD) breakdown potential is forced down, the problem of poor reliability.
It is a further object of the present invention to provide the preparation method of above-mentioned groove-field limiting ring composite terminal structure.
The technical solution adopted in the present invention is, a kind of groove-field limiting ring composite terminal structure, includes source region and terminal
The n that district, active area and termination environment are common-District connects downwards n field stop layer, and connecting below n field stop layer has n+Cathode chamber and
Negative electrode aluminum electrode；
In active area, n-District has connected up p+Anode region and anode aluminum electrode；In the termination region, n-District upwards with have
One section of p that the region of source contact is to increase+Resistance area, with this p+Resistance area is arranged at intervals with a groove, and this beneath trenches sets
It is equipped with the p that multiple ring spacing does not waits, ring width is equal+Field limiting ring, is provided with a n in this beneath trenches outermost+Cut-off ring,
It is filled with passivation layer in groove and extends to p+The top of resistance area, this passivation layer connects with the anode aluminum electrode of active area.
Another technical scheme of the present invention is, the preparation of a kind of above-mentioned groove-field limiting ring composite terminal structure
Method, is embodied as according to following steps:
Step 1, select in original high resistance zone-melting according to monocrystalline silicon piece as n-District；
Step 2, by thinning for Wafer Cleaning post-etching, film is sheltered in the growth of dry oxygen-wet oxygen-dry oxygen alternating oxidation, removes n-District
Lower surface oxide layer, utilizes phosphorus oxychloride source two step to be diffused in n-The lower surface in district forms n field stop layer, then removes chip whole
The surface oxide layer on individual surface；
Step 3, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, lithographic terminal district upper surface groove window
Mouthful, corrosion forms the groove of termination environment, then removes the surface oxide layer on the whole surface of chip；
Step 4, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, at fluted n-District
Upper surface forms boron ion implanting window；
Step 5, by boron ion implanting and advance, at n-District's upper surface concurrently forms p+Anode region, p+Resistance area and terminal
The p in district+Field limiting ring, then removes the oxide layer on the whole surface of chip；
Step 6, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, at termination environment upper surface
Form n+The diffusion window of cut-off ring, removes the oxide layer of n field stop layer lower surface simultaneously；
Step 7, phosphorus pre-deposition, form the negative electrode n of chip lower surface+District and the n of termination environment upper surface+Cut-off ring；
Step 8, use chemical vapor deposition phosphorosilicate glass, and photoetching at chip upper surface, form positive contact hole, then
Carry out phosphorosilicate glass backflow；
Step 9, on the upper and lower surface of chip respectively AM aluminum metallization film, the most under the die sputtered titanium on the aluminium film on surface/
Nickel silver three-layered metal film, then anti-carves the aluminium film of chip upper surface, and alloying, forms Al metallization anode and Al/
Ti/Ni/Ag tetra-layers metallizes negative electrode；
Step 10, utilize high-density plasma chemical vapour-phase deposition, form the polysilicon membrane of densification at chip surface,
And make anode by lithography, form the passivating film of termination environment；
Step 11, high energy hydrion is utilized to carry out proton irradiation at anode surface, it is achieved locally minority carrier life time controls, and moves back
Fire；
Step 12, carry out scribing, encapsulation,.
The invention has the beneficial effects as follows, compared with common field limiting ring structure, use the terminal structure of the present invention, it is only necessary to
At anode p+District, resistance area and p+Before field limit is formed, add a trench etch process, thus technique is simple, cost of manufacture
Low；The present invention is in high-voltage high-speed soft-recovery diode, on the premise of not dramatically increasing terminal size, it is possible to realize
The bulk breakdown voltage of 91.6%, and effectively suppress the punch-through breakdown of the current convergence during Reverse recovery and terminal end surface, significantly
Improve its reliability.
Accompanying drawing explanation
Fig. 1 is the high-voltage high-speed soft-recovery diode cross-sectional view using ordinary construction field limiting ring；
Fig. 2 is the high-voltage high-speed soft-recovery diode cross-sectional view using terminal structure of the present invention；
Fig. 3 is high-voltage high-speed soft-recovery diode body breakdown characteristics under room temperature (300K) with high temperature (400K) and employing
Terminal structure of the present invention compares with terminal breakdown characteristic during common field limiting ring structure；
Fig. 4 is the high-voltage high-speed soft-recovery diode the using common field limiting ring structure space-charge region when reverse breakdown
Extension distribution；
Fig. 5 is the high-voltage high-speed soft-recovery diode the using terminal structure of the present invention space-charge region when reverse breakdown
Extension distribution；
Fig. 6 is to use terminal structure of the present invention reversely hitting with the high-voltage high-speed soft-recovery diode of common field limiting ring structure
Longitudinal electric field intensity distributions when wearing compares；
Fig. 7 is that the high-voltage high-speed soft-recovery diode using terminal structure of the present invention is when reverse breakdown at trench corner
Longitudinal electric field intensity distributions；
Fig. 8 is to use the terminal structure of the present invention high-voltage high-speed soft-recovery diode with common field limiting ring structure the most extensive
The electric current distribution of multiple period anode surface compares；
Fig. 9 is to use the terminal structure of the present invention high-voltage high-speed soft-recovery diode with common field limiting ring structure the most extensive
Multiple period termination environment p+n-The longitudinal electric field intensity distributions of knot knee compares.
Detailed description of the invention
The present invention is described in detail with detailed description of the invention below in conjunction with the accompanying drawings.
With reference to Fig. 1, it it is the high-voltage high-speed soft-recovery diode cross-sectional view of common field limiting ring.
With reference to Fig. 2, the high-voltage high-speed soft-recovery diode cross-section structure of terminal of the present invention is to include source region and terminal
The n that district, active area and termination environment are common-District connects downwards n field stop layer, and connecting below n field stop layer has n+Cathode chamber and
Negative electrode aluminum electrode K；
In active area, n-District has connected up p+Anode region and anode aluminum electrode A；In the termination region, n-District upwards with have
One section of p that the region of source contact is to increase+Resistance area, with this p+On the right side of resistance area, (adjacent) is arranged at intervals with a groove, should
Beneath trenches is provided with the p that multiple ring spacing does not waits, ring width is equal+Field limiting ring, is provided with a n in this beneath trenches outermost+
Cut-off ring, is filled with passivation layer in groove and extends to p+The top of resistance area, this passivation layer is electric with the anode aluminum of active area
Pole A connects.
The groove of the embodiment of the present invention shown in Fig. 2-field limiting ring composite terminal structure and existing common field limiting ring shown in Fig. 1
Structure is compared, and adds one section of p main knot end (adjacent with termination environment)+Resistance area and a groove；Groove and p+Resistance area
Interval, side is arranged, with p+Edge, resistance area distance is 4～6 μm, and gash depth is 8～12 μm；Beneath trenches is provided with 8 p+
Field limiting ring and 1 n+Cut-off ring, its diffusion window width is the most identical；Further, p+Resistance area, p+Field limiting ring and p+Anode region three
The degree of depth identical.
The preparation method of the groove of the present invention-field limiting ring composite terminal structure, is embodied as according to following steps:
Step 1, select in original high resistance zone-melting according to monocrystalline silicon piece as n-District；
Step 2, by thinning for Wafer Cleaning post-etching, film is sheltered in the growth of dry oxygen-wet oxygen-dry oxygen alternating oxidation, removes n-District
Lower surface oxide layer, utilizes phosphorus oxychloride source two step to be diffused in n-The lower surface in district forms n field stop layer, then removes chip whole
The surface oxide layer on individual surface；
Step 3, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, lithographic terminal district upper surface groove window
Mouthful, corrosion forms the groove of termination environment, then removes the surface oxide layer on the whole surface of chip；
Step 4, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, at fluted n-District
Upper surface forms boron ion (B+) inject window；
Step 5, by boron ion (B+) inject and advance, at n-District's upper surface concurrently forms p+Anode region, p+Resistance area and
The p of termination environment+Field limiting ring, then removes the oxide layer on the whole surface of chip；
Step 6, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, at termination environment upper surface
Form n+The diffusion window of cut-off ring, removes the oxide layer of n field stop layer lower surface simultaneously；
Step 7, phosphorus pre-deposition, form the negative electrode n of chip lower surface+District and the n of termination environment upper surface+Cut-off ring；
Step 8, use chemical vapor deposition phosphorosilicate glass (PSG), and photoetching at chip upper surface, form positive contact
Hole, then carries out phosphorosilicate glass backflow；
Step 9, on the upper and lower surface of chip respectively AM aluminum metallization (Al) film, the most under the die metallic aluminium (Al) film on surface
Upper sputtered titanium/nickel silver (Ti/Ni/Ag) three-layered metal film, then anti-carves the aluminium film of chip upper surface, and alloying, is formed
Al metallization anode and Al/Ti/Ni/Ag tetra-layers metallization negative electrode；
Step 10, utilize high-density plasma chemical vapour-phase deposition (HDP-CVD), formed at chip surface fine and close many
Polycrystal silicon film, and make anode by lithography, form the passivating film of termination environment；
Step 11, utilize high energy hydrion (H+) carry out proton irradiation at anode surface, it is achieved locally minority carrier life time controls, and
Annealing；
Step 12, carry out scribing, encapsulation,.
The device property evaluation of terminal structure of the present invention is:
Shown in Fig. 2, as a example by 3.3kV FSRD, utilize the Sentaurus-TCAD software reverse breakdown characteristics to FSRD
Emulate respectively with reverse recovery characteristic, and compare with the characteristic of common field limiting ring FSRD.
1, reverse blocking voltage
Fig. 3 is high-voltage high-speed soft-recovery diode body breakdown characteristics under room temperature (300K) with high temperature (400K) and employing
Terminal structure of the present invention compares with terminal breakdown characteristic during common field limiting ring structure.When 300K, high-voltage high-speed is soft extensive
The bulk breakdown voltage of multiple diode is about 4040V, uses common field limiting ring structure, and its terminal breakdown voltage is about 3335V, reaches
The 82.5% of bulk breakdown voltage；Using trench termination structure of the present invention, its terminal breakdown voltage is 3700V, reaches body breakdown potential
The 91.6% of pressure, improves 9.1% than common field limiting ring structure.When high temperature 400K, the breakdown potential of terminal structure of the present invention
Pressure is also above common field limiting ring terminal structure, and the leakage current of terminal structure of the present invention and common field limiting ring terminal structure phase
With.
Fig. 4 and Fig. 5 respectively uses common field limiting ring terminal structure soft with high-voltage high-speed during terminal structure of the present invention extensive
The space-charge region extension distribution when reverse breakdown of the multiple diode.The size of common field limiting ring terminal and terminal of the present invention is respectively
It is about 1360 μm and 1450 μm.Compared with common field limiting ring structure, terminal structure of the present invention, due to the p formed after grooving+Field limit
Ring increases p+n-The radius of curvature of knot, reduces surface peak electric field, in the case of keeping terminal size to be basically unchanged (only
The resistance area that about 100 μm are wide need to be increased), terminal breakdown voltage can be improved 9.1%.
2, electric-field intensity distribution during reverse breakdown
Fig. 6 is to use terminal structure of the present invention reversely hitting with the high-voltage high-speed soft-recovery diode of common field limiting ring structure
Longitudinal electric field intensity distributions when wearing compares.Common field limiting ring terminal structure is at main knot p+n-The peak electric field strength of knot knee
It is about 2.27 × 105V/cm, terminal structure of the present invention is at resistance area p+n-The peak electric field strength of knot knee is about 2.19 ×
105V/cm, and in whole base, terminal structure electric field intensity of the present invention is above common field limiting ring terminal structure, therefore
Terminal structure of the present invention has higher terminal breakdown voltage.
Fig. 7 is that the high-voltage high-speed soft-recovery diode using terminal structure of the present invention is when reverse breakdown at trench corner
Longitudinal electric field intensity distributions, its peak value is only 1.7 × 105V/cm, far below the p shown in Fig. 6+n-Knot knee peak electricity field intensity
Degree, the peak value electric field at this explanation trench corner is relatively low, and device will not puncture at trench corner.
3, the electric current distribution during Reverse recovery
Fig. 8 is the high-voltage high-speed soft-recovery diode sun during Reverse recovery using terminal of the present invention with common field limiting ring
(test condition is V to the electric current distribution on surface, poled=1.8kV, JF=100A/cm2, L=1.2 μ H, di/dt=1500A/ μ
S), at active area and the termination environment intersection of common field limiting ring terminal structure, electric current density creates the highest spike, its peak value
Reach 6566A/cm2, and terminal structure of the present invention is at whole p+Electric current distribution in resistance area is more uniform, and surface
Electric current density substantially reduces, and peak value is about 5640A/cm2, thus, the terminal structure of the present invention can be avoided because local current is close
Spend height, cause temperature rise to cause component failure.
4, the longitudinal electric field intensity distributions during Reverse recovery
Fig. 9 is to use the terminal structure of the present invention high-voltage high-speed soft-recovery diode with common field limiting ring structure the most extensive
Multiple period termination environment p+n-The longitudinal electric field intensity distributions of knot knee compares, and in common field limiting ring structure, peak value electric field occurs
In surface, termination environment (y=0 μm), its value reaches 2.56 × 105V/cm；And in terminal structure of the present invention, peak value electric field occurs
(y=9.3 μm) and close p in vivo+n-Knot knee, its peak value is about 2.5 × 105V/cm.Visible, terminal structure of the present invention
In groove the peak value electric field of break-through easy during Reverse recovery to terminal end surface can be transferred to internal p+n-Knot bending
Place, it is to avoid the punch-through breakdown of terminal end surface, improves the reliability that terminal is pressure.Further, even if sending out during Reverse recovery
Give birth to dynamic avalanche, away from terminal end surface when this electric-field intensity distribution can make hole be extracted, it is to avoid hole is via end
The punch-through breakdown caused during end surfaces extraction.Additionally, due to the terminal structure cathode side n of the present invention-At n knot, electric field intensity is relatively
Low, be conducive to suppressing the generation of dynamic avalanche, therefore the terminal structure of the present invention can also improve the anti-dynamic avalanche of diode
Ability, thus improve the reliability of its Reverse recovery.
Claims (4)
1. groove-field limiting ring composite terminal structure, it is characterised in that: include source region and termination environment, active area and terminal
The n that district is common-District connects downwards n field stop layer, and connecting below n field stop layer has n+Cathode chamber and negative electrode aluminum electrode thereof；
In active area, n-District has connected up p+Anode region and anode aluminum electrode；In the termination region, n-District upwards with active area
One section of p that the region of contact is to increase+Resistance area, with this p+Resistance area is arranged at intervals with a groove, and this beneath trenches is provided with
The p that multiple ring spacings do not wait, ring width is equal+Field limiting ring, is provided with a n in this beneath trenches outermost+Cut-off ring, at groove
Inside it is filled with passivation layer and extends to p+The top of resistance area, this passivation layer connects with the anode aluminum electrode of active area.
Groove the most according to claim 1-field limiting ring composite terminal structure, it is characterised in that: described groove and p+Resistance
The interval, side in district is arranged, with p+Edge, resistance area distance is 4～6 μm, and gash depth is 8～12 μm；Beneath trenches is provided with 8
Individual p+Field limiting ring and 1 n+Cut-off ring, its diffusion window width is the most identical.
Groove the most according to claim 1-field limiting ring composite terminal structure, it is characterised in that: described p+Resistance area, p+
Field limiting ring and p+The degree of depth of anode region three is identical.
4. the preparation method of the groove described in a claim 1,2 or 3-field limiting ring composite terminal structure, it is characterised in that press
It is embodied as according to following steps:
Step 1, select in original high resistance zone-melting according to monocrystalline silicon piece as n-District；
Step 2, by thinning for Wafer Cleaning post-etching, film is sheltered in the growth of dry oxygen-wet oxygen-dry oxygen alternating oxidation, removes n-District's lower surface
Oxide layer, utilizes phosphorus oxychloride source two step to be diffused in n-The lower surface in district forms n field stop layer, then removes the whole surface of chip
Surface oxide layer；
Step 3, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, lithographic terminal district upper surface trench openings,
Corrosion forms the groove of termination environment, then removes the surface oxide layer on the whole surface of chip；
Step 4, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, at fluted n-District's upper surface
Form boron ion implanting window；
Step 5, by boron ion implanting and advance, at n-District's upper surface concurrently forms p+Anode region, p+Resistance area and termination environment
p+Field limiting ring, then removes the oxide layer on the whole surface of chip；
Step 6, dry oxygen-wet oxygen-dry oxygen alternating oxidation is used to regrow and shelter film, and photoetching, form n at termination environment upper surface+
The diffusion window of cut-off ring, removes the oxide layer of n field stop layer lower surface simultaneously；
Step 7, phosphorus pre-deposition, form the negative electrode n of chip lower surface+District and the n of termination environment upper surface+Cut-off ring；
Step 8, use chemical vapor deposition phosphorosilicate glass, and photoetching at chip upper surface, form positive contact hole, then carry out
Phosphorosilicate glass refluxes；
Step 9, on the upper and lower surface of chip respectively AM aluminum metallization film, the most under the die sputtered titanium/nickel on the aluminium film on surface/
Silver three-layered metal film, then anti-carves the aluminium film of chip upper surface, and alloying, forms Al metallization anode and Al/Ti/
Ni/Ag tetra-layers metallizes negative electrode；
Step 10, utilize high-density plasma chemical vapour-phase deposition, form the polysilicon membrane of densification, and light at chip surface
Carve anode, form the passivating film of termination environment；
Step 11, high energy hydrion is utilized to carry out proton irradiation at anode surface, it is achieved locally minority carrier life time controls, and anneals；
Step 12, carry out scribing, encapsulation,.
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| CN110931360A (en) * | 2019-10-25 | 2020-03-27 | 江苏东晨电子科技有限公司 | Preparation method of power device with terminal protection structure |
| CN113314599A (en) * | 2021-06-22 | 2021-08-27 | 珠海市浩辰半导体有限公司 | Composite terminal structure and preparation method thereof |
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