CN101582456B - Fast-recovery commutation diode used for high frequency electroplating and production method thereof - Google Patents
Fast-recovery commutation diode used for high frequency electroplating and production method thereof Download PDFInfo
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- CN101582456B CN101582456B CN2009103039587A CN200910303958A CN101582456B CN 101582456 B CN101582456 B CN 101582456B CN 2009103039587 A CN2009103039587 A CN 2009103039587A CN 200910303958 A CN200910303958 A CN 200910303958A CN 101582456 B CN101582456 B CN 101582456B
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Abstract
The invention relates to a fast-recovery commutation diode used for high frequency electroplating and a production method thereof, wherein the fast-recovery commutation diode has the high frequency property and is suitable for 30KHz/2-5KA/(200-400)V high frequency electroplating with both high voltage and high current density. An N-type (100) radial single crystal silicon piece, which has specificresistance Rho n of 5-9 Ohm-cm, diameter of 48-70 mm and thickness of 175-185 microns, is adopted; silicon piece diffusion is conducted, and double-surface once diffusion is carried out at temperatur e of 1250 DEG C; the diffusion piece detection is carried out; phosphorosilicate glass and borosilicate glass are used for absorption, the temperature is slowly lowered from 1250 DEG C to 1050 DEG C, the speed rate is 1 DEG C per minute, and isothermal absorption is carried out for 2-3 h; slow temperature reduction is continued till furnace temperature is reduced to 600 DEG C, then furnace delivery is carried out, and minority carrier lifetime Tao p is caused to reach 12-16 Mu S; platinum diffusion is carried out at low temperature so that the minority carrier lifetime Tao p is controlled to be 4-6 Mu S; 12 Mev electron irradiation is carried out so that the minority carrier lifetime Tao p of a base region is 0.9-1.1 Mu S; the two surfaces of the silicon piece are plated with titanium-nickel-gold by means of vapor deposition and then undergo table-board spray sand molding, desanding, cleaning, corrosion, passivation protection, intermediate test, shell arrangement and packaging, and after tests testify qualification, the finished product is produced.
Description
Technical field
The operating frequency that the present invention relates to the Schottky diode in a kind of alternative flash plate is that 30KHz, electric current are that 2～5KA, voltage are fast-recovery commutation diode used for high frequency electroplating and the manufacture method thereof of 200～400V.
Background technology
The Schottky power diode is the majority carrier conductive devices because do not inject with few son, the extraction of excess carrier and the phenomenon that is associated such as compound, be suitable for making the high frequency power application device.For the low pressure high-frequency element, all be that the Schottky power diode is in successful Application for a long time.But there is following shortcoming in the Schottky power diode:
1) blocking voltage is lower, generally with regard to tens volts, adopts a terminal structure such as voltages such as field ring, field plate also can only reach two hectovolts.
2) though under low current density (as JF=10A/cm
2Below), the forward voltage drop of Schottky power diode is lower than the common power diode, but as JF＞10A/cm
2The time, the former will be much higher than the latter.And the working current density of common power diode is greatly about 200A/cm
2＞JF＞50A/cm
2Between, when surge current took place, its current density will be up to several thousand A/cm
2, this moment is if adopt the Schottky power diode then to be burnt already.
The large current characteristic of Schottky diode, especially the surge current characteristic is very poor, so the application of Schottky power diode must strictly limit current density, this uses for big electric current and brings great inconvenience.
Common PiN power diode both had been fit to high voltage, was fit to high current density again, owing to be few electronic conduction device, it is difficult to improve frequency.Though voltage is very low (as 200V, 400V), can adopt the thin silicon sheet to reach the purpose that lowers forward and reverse recovery time, but because the deformation in diffusion of major diameter thin silicon sheet is serious, therefore present common PiN power diode must be done innovation transformation just can reach application under ground the same with the Schottky diode high frequency.
Summary of the invention
The objective of the invention is to solve the problem that prior art exists, a kind of high-frequency characteristic that has is provided, both be fit to high voltage, be fit to fast-recovery commutation diode used for high frequency electroplating and the manufacture method thereof of 30KHz/ (2～5) KA/ (200～400) V of high current density again.
Technical solution of the present invention is:
This fast-recovery commutation diode used for high frequency electroplating is to be made of shell, chip, and described chip comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact, its special character is: described chip adopts radially low-resistance monocrystalline silicon piece of N type (100), described monocrystalline silicon piece electricalresistivity n is that 5～9 Ω-cm, diameter are 48～70mm, thickness 175～185 μ m, and pipe thickness is 7.5～8.5mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, the cathode and anode ohmic contact is titanium-nickel-Jin or titanium-nickel-Yin.
The manufacture method of this fast-recovery commutation diode used for high frequency electroplating is:
Adopt radially monocrystalline silicon piece of N type (100), electricalresistivity n is 5～9 Ω-cm, and diameter is 48～70mm, and thickness is the monocrystalline silicon piece of 175～185 μ m;
Two-sided once diffusion is carried out in the silicon chip diffusion under 1250 ℃;
Diffusion sheet detects, P
+District surface concentration 0.09～0.11mV/mA, boron aluminum extension junction depth X
JPBe 73～77 μ m; Phosphorus expands N
+District surface concentration 0.06～0.08mV/mA, phosphorus expands junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 12～16 μ S;
Phosphorus silicon, Pyrex absorb, and slowly cool to 1050 ℃ from 1250 ℃, and speed is 1 ℃/minute, and constant temperature absorbs 2～3 hours; Continue cooling slowly according to 1 ℃ of/minute speed, after furnace temperature drops to 600 ℃, come out of the stove; Make silica-based district minority carrier life time τ p reach 12～16 μ S by the glass absorption with lowering the temperature slowly.
The low temperature platinum expansion, 942～948 ℃ of temperature, are controlled at 4～6 μ S with minority carrier life time τ p at 40～50 minutes time; Use the 12Mev electron irradiation again, reduce the base minority carrier life time, making base minority carrier life time τ p is 0.9～1.1 μ s;
At the two sides of silicon chip evaporation titanium-nickel-Jin or titanium-nickel-Yin; through table surface undergoes spray sand molding; shakeout, cleaning, burn into passivation protection, middle test, dress shell, inflated with nitrogen cold welding encapsulated moulding; pipe thickness 7.5～8.5mm after the moulding; qualified through electric heating parameter, dynamic parametric test again, make used for high frequency electroplating at last and recover the power rectification diode soon.
The manufacture method of above-mentioned fast-recovery commutation diode used for high frequency electroplating is being carried out two-sidedly when once spreading, and earlier the monocrystalline silicon piece that cleans up is placed on the silicon boat, alternately places N between adjacent monocrystalline silicon piece
+, P
+Paper source sheet is placed the silicon liner at silicon boat two ends, push in the diffusion furnace after spring that silicon boat one end is put compresses monocrystalline silicon piece and paper source sheet; When silicon boat temperature to 390～410 ℃, sheet burning in paper source also makes silicon chip be pressed tightlyer, moves the silicon boat to fire door from diffusion furnace, carefully takes off spring, the silicon boat is pushed once more the flat-temperature zone carries out High temperature diffusion in the diffusion furnace under 1250 ℃.
The manufacture method of above-mentioned fast-recovery commutation diode used for high frequency electroplating, evaporation layer titanium: nickel: gold or titanium: nickel: silver-colored thickness is respectively 0.2 μ m: 0.5 μ m: 0.1 μ m.
Advantage of the present invention is:
1, owing to adopt radially low-resistance monocrystalline silicon piece of N type (100), silicon chip resistivity is 5～9 Ω-cm, and thickness is 180 ± 5 μ m, and the current expansion ability improves 30%, and then has improved the ability of anti-forward and reverse surge current;
2, adopted the silicon chip of diameter 48～70mm, thickness 180 ± 5 μ m,, guaranteed that diffusion back silicon chip is indeformable, thereby satisfied high-frequency requirement by two-sided once diffusion and silicon liner and spring compression measure.
3, take phosphorosilicate glass, Pyrex absorption and slow cooling measure after the diffusion, improved the base minority carrier life time, make τ p=12～16 μ S, life-span in order to ensure the non equilibrium carrier electronics is higher, the minority carrier life time τ n=0.1 τ p of common power taking, so the order of magnitude of τ n＞1 μ S is arranged, it is not obvious to guarantee that peak on state voltage increases under high frequency (being the situation that τ p reduces greatly).
4, for making device can be operated in the frequency of 30KHz, τ p must be dropped to the level of τ p=0.9～1.1 μ s.Elder generation's platinum expansion, utilize the cathode plane high concentration phosphorus to absorb again, guarantee long term device electric heating parameter constantization (being that the deep energy level complex centre that platinum expansion causes will be stablized manyly with respect to electron irradiation), minority carrier life time is controlled at τ p=4～6 μ S after the platinum expansion, and a desirable distribution is arranged in the base, promptly place, base platinum concentration height, low, the reverse recovery of minority carrier life time near PN junction is fast.And along with the increase from the position, base of PN junction, platinum concentration is more and more lower, and minority carrier life time is then more and more higher, and the pressure drop when making on-state increases seldom; Carry out the 12Mev electron irradiation then, accurately control last τ p value, guarantee τ p=0.9～1.1 μ S, thereby satisfy the requirement of frequency.
5, forward recovery time, be 0.7-0.8 μ s reverse recovery time less than 0.1 μ s, and on-state voltage drop is less than 1.55V; Adopt the light wall pipe shell, stray inductance is little; Adopt radially low-resistance monocrystalline silicon piece of N type (100), the low and cross section uniform resistivity of silicon chip resistivity, space charge region electric capacity is little, thereby guarantees the successful Application under the high frequency.
Rectifier diode by this technology manufacturing has the high-frequency characteristic, both be fit to high voltage, be fit to high current density again, operating frequency is that 30KHz, electric current are that 2～5KA, voltage are (200～400) V, is suitable as high frequency electroplating DC power supply fast-recovery commutation diode.
Attached explanation
Fig. 1 is that medium-high frequency of the present invention is electroplated the structural representation with fast-recovery commutation diode;
Fig. 2 is that the diffusion sheet among the present invention is put structural representation;
Fig. 3 is the quartz boat structural representation among the present invention.
Embodiment
Embodiment 1
As shown in the figure, this fast-recovery commutation diode used for high frequency electroplating is to be made of shell 2, chip 1, and described chip 1 comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact 3,4, described chip 1 adopts radially low-resistance monocrystalline silicon piece of N type (100), and described monocrystalline silicon piece electricalresistivity n is that 5～9 Ω-cm, diameter are 48mm, thickness 180 ± 5 μ m, and pipe thickness is 8 ± 0.5mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, cathode and anode ohmic contact 3,4 is titanium-nickel-Jin or titanium-nickel-Yin.
During manufacturing, adopt radially monocrystalline silicon piece 101 of N type (100), electricalresistivity n is that 5～9 Ω-cm, diameter are 48mm, and thickness is 180 ± 5 μ m; After cleaning up, monocrystalline silicon piece 101 is placed on the silicon boat 6, between adjacent monocrystalline silicon piece 101, alternately places N
+, P
+Paper source sheet 5, place silicon liner 7 at silicon boat 6 two ends, push in the diffusion furnace after spring 8 that silicon boat 6 one ends are put compresses monocrystalline silicon piece 101 and paper source sheet 5, the silicon liner 7 that is positioned at silicon boat 6 one ends that are placed with spring 8 has two, and described spring 8 is between two silicon liners 7; When silicon boat 6 temperature to 390～410 ℃, sheet 5 burnings in paper source also make monocrystalline silicon piece 101 be pressed tightlyer, from diffusion furnace, move silicon boat 6 to fire door, carefully take off spring 8, silicon boat 6 is pushed in the diffusion furnace flat-temperature zone once more under 1250 ℃, carry out two-sided once diffusion.
Diffusion sheet detects, P
+District surface concentration 0.09～0.11mV/mA, boron aluminum extension junction depth X
JPBe 73～77 μ m; Phosphorus expands N
+District surface concentration 0.06～0.08mV/mA, phosphorus expands junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 12～16 μ S.
Phosphorus silicon, Pyrex absorb, and slowly cool to 1050 ℃ from 1250 ℃, and speed is 1 ℃/minute, and constant temperature absorbs 3 hours; Continue cooling slowly according to 1 ℃ of/minute speed, after furnace temperature drops to 600 ℃, come out of the stove; Absorb and cooling slowly by glass, making silica-based district minority carrier life time τ p is 12～16 μ S.
The low temperature platinum expansion, 943～948 ℃ of temperature, are controlled at 4～6 μ S with minority carrier life time τ p at 40 minutes time; Use the 12Mev electron irradiation again, reduce the base minority carrier life time, making base minority carrier life time τ p is 0.9～1.1 μ s.
At the two sides of silicon chip evaporation titanium-nickel-Jin (or titanium-nickel-Yin); evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m; through table surface undergoes spray sand molding; shakeout; clean; corrosion; the polyimide passivation protection; middle test; with chip 1 shell 2 of packing into; inflated with nitrogen cold welding encapsulated moulding; pipe thickness 8 ± 0.5mm after the moulding; again through the electric heating parameter; dynamic parameter (comprises service time; forward recovery time and reverse recovery time; ceiling voltage during the forward recovery;) test passes, make the special-purpose fast-recovery commutation diode of high frequency electroplating DC power supply at last.
As shown in the figure, this fast-recovery commutation diode used for high frequency electroplating is to be made of shell 2, chip 1, and described chip 1 comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact 3,4, described chip 1 adopts radially low-resistance monocrystalline silicon piece of N type (100), and described monocrystalline silicon piece electricalresistivity n is that 5～9 Ω-cm, diameter are 70mm, thickness 180 ± 5 μ m, and pipe thickness is 8 ± 0.5mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, cathode and anode ohmic contact 3,4 is titanium-nickel-Jin or titanium-nickel-Yin.
During manufacturing, adopt radially monocrystalline silicon piece 101 of N type (100), electricalresistivity n is that 5～9 Ω-cm, diameter are that 70mm, thickness are 180 ± 5 μ m; After cleaning up, monocrystalline silicon piece 101 is placed on the silicon boat 6, between adjacent monocrystalline silicon piece 101, alternately places N
+, P
+Paper source sheet 5, place silicon liner 7 at silicon boat 6 two ends, push in the diffusion furnace after spring 8 that silicon boat 6 one ends are put compresses monocrystalline silicon piece 101 and paper source sheet 5, the silicon liner 7 that is positioned at silicon boat 6 one ends that are placed with spring 8 has two, and described spring 8 is between two silicon liners 7; When silicon boat 6 temperature to 390～410 ℃, sheet 5 burnings in paper source also make monocrystalline silicon piece 101 be pressed tightlyer, from diffusion furnace, move silicon boat 6 to fire door, carefully take off spring 8, silicon boat 6 is pushed in the diffusion furnace flat-temperature zone once more under 1250 ℃, carry out two-sided once diffusion.
Diffusion sheet detects, P
+District surface concentration 0.09～0.11mV/mA, boron aluminum extension junction depth X
JPBe 73～77 μ m; Phosphorus expands N
+District surface concentration 0.06～0.08mV/mA, phosphorus expands junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 12～16 μ S.
Phosphorus silicon, Pyrex absorb, and slowly cool to 1050 ℃ from 1250 ℃, and speed is 1 ℃/minute, and constant temperature absorbs 2 hours; Continue cooling slowly according to 1 ℃ of/minute speed, after furnace temperature drops to 600 ℃, come out of the stove; Absorb and cooling slowly by phosphorus silicon, Pyrex, making silica-based district minority carrier life time τ p is 12～16 μ S.
The low temperature platinum expansion, 943～948 ℃ of temperature, 50 minutes time, minority carrier life time τ p is controlled at 4～6 μ S, phosphorus silicon, Pyrex absorb; Use the 12Mev electron irradiation again, reduce the base minority carrier life time, making base minority carrier life time τ p is 0.9～1.1 μ s.
At the two sides of silicon chip evaporation titanium-nickel-Jin (or titanium-nickel-Yin); evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m; through table surface undergoes spray sand molding; shakeout; clean; corrosion; the polyimide passivation protection; middle test; with chip 1 shell 2 of packing into; inflated with nitrogen cold welding encapsulated moulding; pipe thickness 8 ± 0.5mm after the moulding; again through the electric heating parameter; dynamic parameter (comprises service time; forward recovery time; ceiling voltage and reverse recovery time during the forward recovery; the soft factor etc.) test passes is made the special-purpose fast-recovery commutation diode of high frequency electroplating DC power supply at last.
As shown in the figure, this fast-recovery commutation diode used for high frequency electroplating is to be made of shell 2, chip 1, and described chip 1 comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact 3,4, described chip 1 adopts radially low-resistance monocrystalline silicon piece of N type (100), and described monocrystalline silicon piece electricalresistivity n is that 5～9 Ω-cm, diameter are 60mm, thickness 180 ± 5 μ m, and pipe thickness is 8 ± 0.5mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, cathode and anode ohmic contact 3,4 is titanium-nickel-Jin or titanium-nickel-Yin.
During manufacturing, adopt radially monocrystalline silicon piece 101 of N type (100), electricalresistivity n is that 5～9 Ω-cm, diameter are 60mm, and thickness is 180 ± 5 μ m; After cleaning up, monocrystalline silicon piece 101 is placed on the silicon boat 6, between adjacent monocrystalline silicon piece 101, alternately places N
+, P
+Paper source sheet 5, place silicon liner 7 at silicon boat 6 two ends, push in the diffusion furnace after spring 8 that silicon boat 6 one ends are put compresses monocrystalline silicon piece 101 and paper source sheet 5, the silicon liner 7 that is positioned at silicon boat 6 one ends that are placed with spring 8 has two, and described spring 8 is between two silicon liners 7; When silicon boat 6 temperature to 390～410 ℃, sheet 5 burnings in paper source also make monocrystalline silicon piece 101 be pressed tightlyer, from diffusion furnace, move silicon boat 6 to fire door, carefully take off spring 8, silicon boat 6 is pushed in the diffusion furnace flat-temperature zone once more under 1250 ℃, carry out two-sided once diffusion.
Diffusion sheet detects, P
+District surface concentration 0.09～0.11mV/mA, boron aluminum extension junction depth X
JPBe 73～77 μ m; Phosphorus expands N
+District surface concentration 0.06～0.08mV/mA, phosphorus expands junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 12～16 μ S;
Phosphorus silicon, Pyrex absorb, and slowly cool to 1050 ℃ from 1250 ℃, and speed is 1 ℃/minute, and constant temperature absorbs 2.5 hours; Continue cooling slowly according to 1 ℃ of/minute speed, after furnace temperature drops to 600 ℃, come out of the stove; Absorb and cooling slowly by glass, make silica-based district minority carrier life time τ p reach 12～16 μ S.
The low temperature platinum expansion, 943～948 ℃ of temperature, are controlled at 4～6 μ S with minority carrier life time τ p at 45 minutes time; Use the 12Mev electron irradiation again, reduce the base minority carrier life time, making base minority carrier life time τ p is 0.9～1.1 μ s.
At the two sides of silicon chip evaporation titanium-nickel-Jin (or titanium-nickel-Yin); evaporation layer titanium: nickel: (or titanium: nickel: silver) thickness is respectively 0.2 μ m to gold: 0.5 μ m: 0.1 μ m; through table surface undergoes spray sand molding; shakeout, cleaning, the protection of burn into polyimide passivation, middle test; with chip 1 pack into shell 2, inflated with nitrogen cold welding encapsulated moulding, pipe thickness 8 ± 0.5mm after the moulding.Through conventional off-state, on-state electric heating parameter, dynamic parameter (ceiling voltage and reverse recovery time, the soft factor during comprising forward recovery time, forward recovery) test passes, make the special-purpose fast-recovery commutation diode of high frequency electroplating DC power supply at last.
Claims (4)
1. a fast-recovery commutation diode used for high frequency electroplating is to be made of shell, chip, and described chip comprises base N, expands phosphorus district N
+With expansion boron district P
+And cathode and anode ohmic contact, it is characterized in that: described chip adopts radially low-resistance monocrystalline silicon piece of N type (100), described monocrystalline silicon piece electricalresistivity n is that 5～9 Ω-cm, diameter are 48～70 ㎜, thickness 175～185 μ m, and pipe thickness is 7.5～8.5mm, expands phosphorus district N
+With expansion boron district P
+Once diffuse to form for two-sided, the cathode and anode ohmic contact is titanium-nickel-Jin or titanium-nickel-Yin.
2. the manufacture method of a fast-recovery commutation diode used for high frequency electroplating is characterized in that:
Adopt radially monocrystalline silicon piece of N type (100), electricalresistivity n is 5～9 Ω-cm, and diameter is 48～70 ㎜, and thickness is the monocrystalline silicon piece of 175～185 μ m;
Two-sided once diffusion is carried out in the silicon chip diffusion under 1250 ℃;
Diffusion sheet detects, P
+District surface concentration 0.09～0.11mV/mA, boron aluminum extension junction depth X
JPBe 73～77 μ m; Phosphorus expands N
+District surface concentration 0.06～0.08mV/mA, phosphorus expands junction depth X
JNBe 58～62 μ m; Base remaining minority carrier life time τ p is 12～16 μ S;
Phosphorus silicon, Pyrex absorb, and slowly cool to 1050 ℃ from 1250 ℃, and speed is 1 ℃/minute, and constant temperature absorbs 2～3 hours; Continue cooling slowly according to 1 ℃ of/minute speed, after furnace temperature drops to 600 ℃, come out of the stove; Make silica-based district minority carrier life time τ p reach 12～16 μ S by the glass absorption with lowering the temperature slowly;
The low temperature platinum expansion, 942～948 ℃ of temperature, are controlled at 4～6 μ S with minority carrier life time τ p at 40～50 minutes time; Use the 12Mev electron irradiation again, reduce the base minority carrier life time, making base minority carrier life time τ p is 0.9～1.1 μ s;
At the two sides of silicon chip evaporation titanium-nickel-Jin or titanium-nickel-Yin; through table surface undergoes spray sand molding; shakeout, cleaning, burn into passivation protection, middle test, dress shell, inflated with nitrogen cold welding encapsulated moulding; pipe thickness 7.5～8.5mm after the moulding; qualified through electric heating parameter, dynamic parametric test again, make the high frequency electroplating DC power supply at last with the fast power rectification diode that recovers.
3. the manufacture method of fast-recovery commutation diode used for high frequency electroplating according to claim 2 is characterized in that: carrying out two-sidedly when once spreading, earlier the monocrystalline silicon piece that cleans up is being placed on the silicon boat, alternately place N between adjacent monocrystalline silicon piece
+, P
+Paper source sheet is placed the silicon liner at silicon boat two ends, push in the diffusion furnace after spring that silicon boat one end is put compresses monocrystalline silicon piece and paper source sheet; When silicon boat temperature to 390～410 ℃, sheet burning in paper source also makes silicon chip be pressed tightlyer, moves the silicon boat to fire door from diffusion furnace, carefully takes off spring, the silicon boat is pushed once more the flat-temperature zone carries out High temperature diffusion in the diffusion furnace under 1250 ℃.
4. the manufacture method of fast-recovery commutation diode used for high frequency electroplating according to claim 2, it is characterized in that: evaporation layer titanium: nickel: gold or titanium: nickel: silver-colored thickness is respectively 0.2 μ m:0.5 μ m:0.1 μ m.
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| CN101866854A (en) * | 2010-05-11 | 2010-10-20 | 襄樊三瑞达电力半导体有限公司 | Production method of ultrafast soft recovery diode chip |
| CN102064107A (en) * | 2010-12-10 | 2011-05-18 | 天津中环半导体股份有限公司 | High-voltage diode for frequency-variable microwave oven and production process thereof |
| CN102683429B (en) * | 2012-06-06 | 2015-01-14 | 锦州市圣合科技电子有限责任公司 | Ultra-high-current high-frequency FRD chip and manufacturing method thereof |
| CN103578978B (en) * | 2013-10-17 | 2016-05-18 | 北京时代民芯科技有限公司 | A kind of high pressure fast recovery diode manufacture method based on Bonded on Silicon Substrates material |
| CN105895707B (en) * | 2015-01-26 | 2020-02-07 | 三垦电气株式会社 | Semiconductor device and method for manufacturing the same |
| CN105977309B (en) * | 2016-07-23 | 2019-11-08 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of highly reliable Flouride-resistani acid phesphatase glassivation fast-recovery commutation diode manufacturing method |
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| US3710203A (en) * | 1971-11-05 | 1973-01-09 | Fmc Corp | High power storage diode |
| US4165517A (en) * | 1977-02-28 | 1979-08-21 | Electric Power Research Institute, Inc. | Self-protection against breakover turn-on failure in thyristors through selective base lifetime control |
| US4165515A (en) * | 1977-12-28 | 1979-08-21 | Bell Telephone Laboratories, Incorporated | Light emitting tunnel junctions which are stable at room temperature |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3710203A (en) * | 1971-11-05 | 1973-01-09 | Fmc Corp | High power storage diode |
| US4165517A (en) * | 1977-02-28 | 1979-08-21 | Electric Power Research Institute, Inc. | Self-protection against breakover turn-on failure in thyristors through selective base lifetime control |
| US4165515A (en) * | 1977-12-28 | 1979-08-21 | Bell Telephone Laboratories, Incorporated | Light emitting tunnel junctions which are stable at room temperature |
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