CN101582435B - 一种影像感测晶片封装结构及其应用的相机模组 - Google Patents
一种影像感测晶片封装结构及其应用的相机模组 Download PDFInfo
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- CN101582435B CN101582435B CN2008103016152A CN200810301615A CN101582435B CN 101582435 B CN101582435 B CN 101582435B CN 2008103016152 A CN2008103016152 A CN 2008103016152A CN 200810301615 A CN200810301615 A CN 200810301615A CN 101582435 B CN101582435 B CN 101582435B
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Abstract
Description
Claims (6)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008103016152A CN101582435B (zh) | 2008-05-16 | 2008-05-16 | 一种影像感测晶片封装结构及其应用的相机模组 |
US12/210,534 US7916212B2 (en) | 2008-05-16 | 2008-09-15 | Image sensor package and camera module utilizing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008103016152A CN101582435B (zh) | 2008-05-16 | 2008-05-16 | 一种影像感测晶片封装结构及其应用的相机模组 |
Publications (2)
Publication Number | Publication Date |
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CN101582435A CN101582435A (zh) | 2009-11-18 |
CN101582435B true CN101582435B (zh) | 2012-03-14 |
Family
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Application Number | Title | Priority Date | Filing Date |
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CN2008103016152A Expired - Fee Related CN101582435B (zh) | 2008-05-16 | 2008-05-16 | 一种影像感测晶片封装结构及其应用的相机模组 |
Country Status (2)
Country | Link |
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US (1) | US7916212B2 (zh) |
CN (1) | CN101582435B (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202120913U (zh) * | 2011-06-08 | 2012-01-18 | 旭丽电子(广州)有限公司 | 薄型化图像撷取模块 |
CN102231384B (zh) * | 2011-06-22 | 2013-05-01 | 格科微电子(上海)有限公司 | 图像传感器及其形成方法 |
CN102646660B (zh) * | 2012-04-27 | 2014-11-26 | 苏州晶方半导体科技股份有限公司 | 半导体封装方法 |
CN102699466B (zh) * | 2012-06-19 | 2015-08-19 | 中国振华集团永光电子有限公司 | 半导体电极组件的钎焊方法 |
CN103579258B (zh) * | 2012-07-18 | 2016-09-07 | 光宝电子(广州)有限公司 | 基板内嵌式模块结构 |
JP2014191146A (ja) * | 2013-03-27 | 2014-10-06 | Panasonic Corp | 撮像装置 |
CN103389610B (zh) * | 2013-07-24 | 2016-04-13 | 南昌欧菲光电技术有限公司 | 相机模组及其制造方法、采用该相机模组的手持通讯装置 |
US9530818B2 (en) * | 2013-08-27 | 2016-12-27 | Semiconductor Components Industries, Llc | Image sensor integrated circuit package with reduced thickness |
CN103956367B (zh) * | 2014-05-20 | 2017-03-29 | 苏州科阳光电科技有限公司 | 新型封装结构的半导体器件 |
CN103956366B (zh) * | 2014-05-20 | 2017-03-29 | 苏州科阳光电科技有限公司 | 晶圆级芯片封装结构 |
US11310402B2 (en) * | 2015-08-25 | 2022-04-19 | Gingy Technology Inc. | Image capturing device and fingerprint image capturing device |
CN104580856A (zh) * | 2014-12-25 | 2015-04-29 | 南昌欧菲光电技术有限公司 | 摄像头模组及具有所述摄像头模组的摄像设备 |
CN106298712B (zh) * | 2015-05-18 | 2019-09-20 | 成都艾德沃传感技术有限公司 | 一种传感器及传感器的制备方法 |
WO2017059777A1 (zh) * | 2015-10-10 | 2017-04-13 | 苏州晶方半导体科技股份有限公司 | 影像传感芯片的封装方法以及封装结构 |
JP6629440B2 (ja) * | 2015-10-10 | 2020-01-15 | 蘇州晶方半導体科技股▲分▼有限公司China Wafer Level Csp Co., Ltd. | イメージセンシングチップのためのパッケージング方法およびパッケージ構造 |
KR20170085833A (ko) * | 2016-01-15 | 2017-07-25 | 삼성전기주식회사 | 전자 부품 패키지 및 그 제조방법 |
CN106505073A (zh) * | 2016-09-23 | 2017-03-15 | 江西盛泰光学有限公司 | 一种晶圆级玻璃上芯片封装结构 |
US10312276B2 (en) * | 2017-08-02 | 2019-06-04 | Omnivision Technologies, Inc. | Image sensor package to limit package height and reduce edge flare |
CN108447880B (zh) * | 2018-03-16 | 2020-10-20 | 隋浩智 | 一种图像传感器及其制造方法 |
TWI678570B (zh) * | 2018-06-06 | 2019-12-01 | 鴻海精密工業股份有限公司 | 接合結構及具有該接合結構之相機模組 |
CN111665640B (zh) * | 2019-03-08 | 2022-07-26 | 三赢科技(深圳)有限公司 | 结构光投射模组及其电子装置 |
CN109905584A (zh) * | 2019-03-28 | 2019-06-18 | 昆山丘钛微电子科技有限公司 | 摄像头模组及终端 |
CN112118373B (zh) * | 2019-06-21 | 2021-08-06 | 致伸科技股份有限公司 | 微型化影像采集模块及其制作方法 |
CN112770019B (zh) * | 2019-10-21 | 2022-07-12 | 宁波舜宇光电信息有限公司 | 感光组件及其制备方法和摄像模组 |
WO2021078138A1 (zh) * | 2019-10-21 | 2021-04-29 | 宁波舜宇光电信息有限公司 | 线路板组件、感光组件、摄像模组以及线路板组件和感光组件的制备方法 |
TWI746082B (zh) * | 2020-07-24 | 2021-11-11 | 海華科技股份有限公司 | 可攜式電子裝置及其影像擷取模組 |
TWI799943B (zh) * | 2021-08-12 | 2023-04-21 | 致伸科技股份有限公司 | 鏡頭模組與應用於其中之製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7074638B2 (en) | 2002-04-22 | 2006-07-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and method of manufacturing said solid-state imaging device |
US7173231B2 (en) * | 2003-09-16 | 2007-02-06 | Wen Ching Chen | Chip scale package structure for an image sensor |
TWI234884B (en) | 2003-12-31 | 2005-06-21 | Advanced Semiconductor Eng | Image sensor package and method for manufacturing the same |
US7646075B2 (en) * | 2004-08-31 | 2010-01-12 | Micron Technology, Inc. | Microelectronic imagers having front side contacts |
TWM264652U (en) * | 2004-10-21 | 2005-05-11 | Chipmos Technologies Inc | Structure of image sensor package |
TWM264651U (en) * | 2004-10-21 | 2005-05-11 | Chipmos Technologies Inc | Package structure of image sensor device |
KR100687069B1 (ko) * | 2005-01-07 | 2007-02-27 | 삼성전자주식회사 | 보호판이 부착된 이미지 센서 칩과 그의 제조 방법 |
KR20060087273A (ko) * | 2005-01-28 | 2006-08-02 | 삼성전기주식회사 | 반도체 패키지및 그 제조방법 |
KR100616670B1 (ko) * | 2005-02-01 | 2006-08-28 | 삼성전기주식회사 | 웨이퍼 레벨의 이미지 센서 모듈 및 그 제조방법 |
US20060219862A1 (en) | 2005-03-31 | 2006-10-05 | Kai-Kuang Ho | Compact camera module with reduced thickness |
TW200637017A (en) * | 2005-04-14 | 2006-10-16 | Chipmos Technologies Inc | Image sensor module package |
JP4486005B2 (ja) * | 2005-08-03 | 2010-06-23 | パナソニック株式会社 | 半導体撮像装置およびその製造方法 |
-
2008
- 2008-05-16 CN CN2008103016152A patent/CN101582435B/zh not_active Expired - Fee Related
- 2008-09-15 US US12/210,534 patent/US7916212B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20090284628A1 (en) | 2009-11-19 |
CN101582435A (zh) | 2009-11-18 |
US7916212B2 (en) | 2011-03-29 |
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