CN101553877A - Nand快闪存储器单元阵列及使用自适应存储器状态分割的方法 - Google Patents
Nand快闪存储器单元阵列及使用自适应存储器状态分割的方法 Download PDFInfo
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- CN101553877A CN101553877A CNA200780038344XA CN200780038344A CN101553877A CN 101553877 A CN101553877 A CN 101553877A CN A200780038344X A CNA200780038344X A CN A200780038344XA CN 200780038344 A CN200780038344 A CN 200780038344A CN 101553877 A CN101553877 A CN 101553877A
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- memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (44)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/618,498 US7489548B2 (en) | 2006-12-29 | 2006-12-29 | NAND flash memory cell array with adaptive memory state partitioning |
US11/618,498 | 2006-12-29 | ||
US11/618,482 US7489547B2 (en) | 2006-12-29 | 2006-12-29 | Method of NAND flash memory cell array with adaptive memory state partitioning |
US11/618,482 | 2006-12-29 | ||
PCT/US2007/087262 WO2008082888A1 (en) | 2006-12-29 | 2007-12-12 | Nand flash memory cell array and method with adaptive memory state partitioning |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101553877A true CN101553877A (zh) | 2009-10-07 |
CN101553877B CN101553877B (zh) | 2013-03-13 |
Family
ID=39583692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780038344.XA Active CN101553877B (zh) | 2006-12-29 | 2007-12-12 | Nand快闪存储器单元阵列及使用自适应存储器状态分割的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7489547B2 (zh) |
CN (1) | CN101553877B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065678A (zh) * | 2011-10-21 | 2013-04-24 | 点序科技股份有限公司 | 闪速存储器装置及其数据储存方法 |
CN105280228A (zh) * | 2014-07-08 | 2016-01-27 | 爱思开海力士有限公司 | 半导体存储器件、半导体系统和操作方法 |
US10650896B1 (en) | 2018-12-10 | 2020-05-12 | Yangtze Memory Technologies Co., Ltd. | Pre-read technique for multi-pass programming of flash memory |
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US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
US7474560B2 (en) * | 2006-08-21 | 2009-01-06 | Micron Technology, Inc. | Non-volatile memory with both single and multiple level cells |
US7606966B2 (en) * | 2006-09-08 | 2009-10-20 | Sandisk Corporation | Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory |
US7885112B2 (en) * | 2007-09-07 | 2011-02-08 | Sandisk Corporation | Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages |
US7734861B2 (en) * | 2006-09-08 | 2010-06-08 | Sandisk Corporation | Pseudo random and command driven bit compensation for the cycling effects in flash memory |
US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
KR100902008B1 (ko) * | 2007-02-09 | 2009-06-12 | 삼성전자주식회사 | 메모리 셀에 멀티 비트 데이터를 저장하는 플래시 메모리를 포함한 메모리 시스템 |
KR101468432B1 (ko) | 2007-03-28 | 2014-12-04 | 샌디스크 테크놀로지스, 인코포레이티드 | 제어된 스크럽 데이터 판독에 의해 트리거되는 플래시 메모리 리프레시 기술 |
US7477547B2 (en) | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
KR100836800B1 (ko) * | 2007-05-30 | 2008-06-10 | 삼성전자주식회사 | 메모리 데이터 독출 장치 및 이를 이용한 메모리 데이터독출 방법 |
JP4534211B2 (ja) * | 2007-12-26 | 2010-09-01 | マイクロン テクノロジー, インク. | 信頼性が改善された多値セルメモリデバイス |
KR20110102735A (ko) * | 2010-03-11 | 2011-09-19 | 삼성전자주식회사 | 워드 라인들 사이의 간섭을 줄이기 위한 불휘발성 메모리 장치 및 그것의 동작 방법 |
KR101798013B1 (ko) | 2010-12-30 | 2017-11-16 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
US8843693B2 (en) | 2011-05-17 | 2014-09-23 | SanDisk Technologies, Inc. | Non-volatile memory and method with improved data scrambling |
US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
CN104115231B (zh) * | 2011-12-23 | 2017-12-26 | 英特尔公司 | 用于确定对存储器阵列的访问的方法、装置和系统 |
JP2013254537A (ja) | 2012-06-06 | 2013-12-19 | Toshiba Corp | 半導体記憶装置及びコントローラ |
US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
US10354723B2 (en) * | 2017-06-29 | 2019-07-16 | SK Hynix Inc. | Memory device and method for programming the same |
US10553298B1 (en) * | 2018-07-27 | 2020-02-04 | Sandisk Technologies Llc | Non-volatile memory with countermeasure for select gate disturb |
KR20220087655A (ko) * | 2020-12-17 | 2022-06-27 | 삼성전자주식회사 | 스토리지 장치 및 그의 동작 방법 |
Family Cites Families (11)
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US5555204A (en) * | 1993-06-29 | 1996-09-10 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device |
KR0169267B1 (ko) * | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
US5903495A (en) * | 1996-03-18 | 1999-05-11 | Kabushiki Kaisha Toshiba | Semiconductor device and memory system |
JP3679970B2 (ja) | 2000-03-28 | 2005-08-03 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2002133885A (ja) * | 2000-10-30 | 2002-05-10 | Toshiba Corp | 不揮発性半導体記憶装置 |
US6522580B2 (en) * | 2001-06-27 | 2003-02-18 | Sandisk Corporation | Operating techniques for reducing effects of coupling between storage elements of a non-volatile memory operated in multiple data states |
US6456528B1 (en) * | 2001-09-17 | 2002-09-24 | Sandisk Corporation | Selective operation of a multi-state non-volatile memory system in a binary mode |
US7023739B2 (en) | 2003-12-05 | 2006-04-04 | Matrix Semiconductor, Inc. | NAND memory array incorporating multiple write pulse programming of individual memory cells and method for operation of same |
US7466590B2 (en) | 2004-02-06 | 2008-12-16 | Sandisk Corporation | Self-boosting method for flash memory cells |
KR100739946B1 (ko) * | 2004-12-27 | 2007-07-16 | 주식회사 하이닉스반도체 | 더미 워드라인을 구비한 낸드 플래시 메모리 장치 |
US7440322B2 (en) * | 2006-04-20 | 2008-10-21 | Sandisk Corporation | Method and system for flash memory devices |
-
2006
- 2006-12-29 US US11/618,482 patent/US7489547B2/en active Active
-
2007
- 2007-12-12 CN CN200780038344.XA patent/CN101553877B/zh active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065678A (zh) * | 2011-10-21 | 2013-04-24 | 点序科技股份有限公司 | 闪速存储器装置及其数据储存方法 |
CN105280228A (zh) * | 2014-07-08 | 2016-01-27 | 爱思开海力士有限公司 | 半导体存储器件、半导体系统和操作方法 |
US10650896B1 (en) | 2018-12-10 | 2020-05-12 | Yangtze Memory Technologies Co., Ltd. | Pre-read technique for multi-pass programming of flash memory |
WO2020118481A1 (en) * | 2018-12-10 | 2020-06-18 | Yangtze Memory Technologies Co., Ltd. | Pre-read technique for multi-pass programming of flash memory |
Also Published As
Publication number | Publication date |
---|---|
US20080158968A1 (en) | 2008-07-03 |
CN101553877B (zh) | 2013-03-13 |
US7489547B2 (en) | 2009-02-10 |
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Owner name: SANDISK TECHNOLOGIES, INC. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20121011 |
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Effective date of registration: 20121011 Address after: American Texas Applicant after: Sandisk Corp. Address before: American California Applicant before: Sandisk Corp. |
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Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |