CN101525738A - Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel - Google Patents
Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel Download PDFInfo
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- CN101525738A CN101525738A CN200910071869A CN200910071869A CN101525738A CN 101525738 A CN101525738 A CN 101525738A CN 200910071869 A CN200910071869 A CN 200910071869A CN 200910071869 A CN200910071869 A CN 200910071869A CN 101525738 A CN101525738 A CN 101525738A
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Abstract
An internal surface ion implantation modification device and method of inductively coupled plasmatube barrel relate to a surface treatment device and a treatment method. The invention solves the problem that the internal surface of a thin pipe is difficult to treat due to the large discharge interval in the process of performing ion injection treatment for the internal surface of tube barrel by capacitive coupled plasma. A solenoid is arranged in the tube barrel, one end thereof is connected with a match box and the other end thereof is connected with an earth pole. The method comprises a first step of pumping vacuum of a vacuum chamber; a second step of infusing gas in the vacuum chamber; a third step of generating uniform axial inductively coupled plasma outside and inside the solenoid; a fourth step of exerting negative pulsed high voltage on the tube barrel to form an radial electric field in the tube barrel; and a fifth step of turning off the negative pulsed high voltage electric source and radio frequency electric source, and accomplishing the internal surface ion injection of inductively coupled plasmatube barrel. The invention has the characteristics that the plasma source discharges uniformly and the solenoid acts as an earth pole for suppressing electric potential. The invention can perform ion injection treatment on the tube barrel internal surface with smaller diameter.
Description
Technical field
The present invention relates to a kind of surface processing device and treatment process.
Background technology
The plasma immersion ion implantttion technique is one and is suitable for complex-shaped workpiece is carried out ion implantation surface-treated technology.In this technology, workpiece is soaked in the plasma body, applies the negative high voltage pulse on the workpiece, at the negative high voltage impulse duration, form the ion sheath layer around the workpiece, ion to workpiece surface accelerated motion, finally injects workpiece surface and obtains ion implantation effect under the effect of sheath layer internal electric field.
Though the plasma immersion ion implantttion technique is applicable to complex-shaped workpiece is carried out ion implantation processing, but the internal surface that is to use the plasma immersion ion implantttion technique to handle the socket workpiece exists two very serious problems, first ion implantation energy problem, it two is plasma source and homogeneity question.China Patent No. is 96201360.9, the utility model patent that open day is on April 15th, 1998 discloses a kind of plasma body source material internal surface ion implantation apparatus, this patent has proposed in socket coaxial placement ground electrode and has clamped down on injecting voltage and inject energy to improve, this patent ionic medium body is entered from the pipe external diffusion by the mouth of pipe, so this method does not solve the problem that plasma body exhausts very soon in the socket.In order to address this problem, China Patent No. is 01115523.X, the patent of invention that open day is on December 4th, 2004 discloses a kind of method of modifying inner surface of tubular workpiece, China Patent No. is 03105058.1, open day be that to disclose a kind of method of modifying inner surface of tubular workpiece and isolated plant and China Patent No. thereof be 200310113092.6 for the patent of invention on September 8th, 2004, the patent of invention that open day is on December 4th, 2004 discloses the device of the ion implantation modifying inner surface of a kind of plasma source, the core of above-mentioned three patents is: insert radio-frequency electrode and aperture plate ground electrode in the socket coaxially, produce capacitance coupling plasma by between radio-frequency electrode and aperture plate (or thread) ground electrode, applying radio frequency power, by applying the radial electric field of setting up between pulse negative high voltage and aperture plate (or thread) ground electrode in order to speeding-up ion on the socket, ion is by diffusing into the zone between aperture plate (or thread) ground electrode and the socket inwall, then under effect of electric field to the accelerated motion of socket inwall, be injected into the socket inwall at last, this patent had both solved the acquisition problem of internal plasma, can improve the injection energy by command potential again, but also there is weak point in this method: owing to there is aperture plate, the socket inwall exists shade influence, air pressure during injection is very high, between 10-30Pa, thereby can reduce the ionic free path causes the injection power loss on the one hand, also can induce the surface of electrion and sparking damage material on the other hand, what main weak point was this method employing is the condenser coupling radio frequency discharge, belong to two utmost points discharges (radially), electronics is done radially concussion between two electrodes, when interelectrode distance is very big could enough collisions take place with neutral gas in the electron motion process, owing to be subjected to Paschen (Paschen) the law restriction of two utmost points discharge, central radio-frequency electrode and netted (or thread) ground electrode spacing just can not be too little, otherwise the radio frequency discharge difficulty.Want to discharge successfully, can only adopt bigger arcing distance to satisfy, also need the space between netted in addition (or thread) ground electrode and the processed pipe, this just makes that the socket diameter of handling naturally can not be too little.
Summary of the invention
The objective of the invention is to inject when handling because of adopting capacitance coupling plasma to make the discharge spacing be difficult to the problem that the tubule internal surface is handled greatly, provide a kind of inductively coupled plasma socket internal surface ion to inject reforming apparatus and method for solving existing socket internal surface ion.
The inventive system comprises at least one solenoid coil, at least one socket, the first insulated enclosure joint, vacuum chamber, radio-frequency power supply, the pulse negative high voltage power source, the pump group system, match box, the second insulated enclosure joint, the 3rd insulated enclosure joint, first insulating support, high-tension cable, first cable and second cable, the output terminal of radio-frequency power supply is connected with the match box input terminus, the first insulated enclosure joint, the second insulated enclosure joint and the 3rd insulated enclosure joint are separately positioned on the sidewall of vacuum chamber, first insulating support is arranged on the interior bottom surface of vacuum chamber, at least one socket is arranged on first insulating support, vacuum chamber is connected with the pump group system, at least one socket that one end of high-tension cable passes in the 3rd insulated enclosure joint and the vacuum chamber is connected, the other end of high-tension cable is connected with vacuum chamber pulse negative high voltage power source outward, at least one solenoid coil be arranged in the socket and with the coaxial setting of socket, a solenoidal end is connected by the match box of first cable with the vacuum chamber outside, and first cable passes the first insulated enclosure joint, the solenoidal the other end is connected with the earth polar of radio-frequency power supply by second cable, and second cable passes the second insulated enclosure joint.
Method of the present invention is to realize by following steps: one, utilize the pump group system that the air pressure in the vacuum chamber is evacuated to base vacuum degree 5～10
-3Pa; Two, in vacuum chamber, charge into gas, make the air pressure in the vacuum chamber reach operating air pressure 0.1～15Pa; Three, open radio-frequency power supply, be arranged on the solenoid coil discharge in the socket, produce axially inductively coupled plasma uniformly inside and outside solenoid coil, plasma body will be full of the internal space of socket, and along the axial uniform distribution of socket; Four, unbalanced pulse negative high voltage power source, the pulse negative high voltage is applied on the socket by high-tension cable, between socket internal surface and solenoid coil, form radial electric field, radial electric field makes the ion between socket internal surface and the solenoid coil be accelerated to the socket inwall and flies to, promptly the inwall to socket carries out injecting 0.5～5 hour from injection; Five, close pulse negative high voltage power source and radio-frequency power supply, close the pump group system, stop vacuum in the vacuum chamber, promptly finish inductively coupled plasma socket internal surface ion and inject.
The invention has the beneficial effects as follows: because reforming apparatus of the present invention is provided with solenoid coil in socket, make and produce an axial equally distributed inductively coupled plasma in the socket therefore have plasma source discharge advantage of uniform by on solenoid coil, applying radio frequency power along socket.Because a solenoidal wherein termination radio frequency ground electrode adopts method of modifying of the present invention, makes solenoid coil play the effect of ground electrode command potential in ion implantation process.Because what the present invention adopted is inductively-coupled plasma sources, electronics is done the spire motion around symmetry axis during discharge, the electronic motion distance is just prolonged significantly in very little space, increased in the electron motion process collision with neutral gas, promoted plasma discharge, less to the requirement of socket radial dimension, thus can carry out ion implantation processing to the more tiny socket internal surface of diameter.
Description of drawings
Fig. 1 is a device one-piece construction synoptic diagram of the present invention, and Fig. 2 is the structural representation of embodiment four, and Fig. 3 is the structural representation of embodiment five.
Embodiment
Embodiment one: present embodiment is described in conjunction with Fig. 1, present embodiment comprises at least one solenoid coil 1, at least one socket 2, the first insulated enclosure joint 3, vacuum chamber 4, radio-frequency power supply 5, pulse negative high voltage power source 6, pump group system 7, match box 16, the second insulated enclosure joint 17, the 3rd insulated enclosure joint 18, first insulating support 19, high-tension cable 20, first cable 22 and second cable 23, the output terminal of radio-frequency power supply 5 is connected with match box 16 input terminuss, the first insulated enclosure joint 3, the second insulated enclosure joint 17 and the 3rd insulated enclosure joint 18 are separately positioned on the sidewall of vacuum chamber 4, first insulating support 19 is arranged on the bottom surface in the vacuum chamber 4, at least one socket 2 is arranged on first insulating support 19, vacuum chamber 4 is connected with pump group system 7, at least one socket 2 that one end of high-tension cable 20 passes in the 3rd insulated enclosure joint 18 and the vacuum chamber 4 is connected, the other end of high-tension cable 20 is connected with vacuum chamber 4 pulse negative high voltage power source 6 outward, at least one solenoid coil 1 be arranged in the socket 2 and with socket 2 coaxial settings, one end of solenoid coil 1 is connected with the match box 16 of vacuum chamber 4 outsides by first cable 22, and first cable 22 passes the first insulated enclosure joint 3, the other end of solenoid coil 1 is connected with the earth polar 15 of radio-frequency power supply 5 by second cable 23, and second cable 23 passes the second insulated enclosure joint 17.One end of solenoid coil 1 is connected to earth polar 15, utilizes earth polar 15 to come command potential to improve ion implantation energy.Solenoid coil 1 has been realized two functions simultaneously, has both realized applying the function that produces plasma body behind the radio frequency power, and the function of ground electrode command potential also is provided.
Embodiment two: the difference of present embodiment and embodiment one is: the quantity of socket 2 is 2～5, the quantity of solenoid coil 1 is identical with the quantity of socket 2,2～5 sockets 2 are set in parallel on first insulating support 19, connect by lead between 2～5 sockets 2, pass through the lead parallel connection between each solenoid coil 1.Other is identical with embodiment one.
Embodiment three: the difference of present embodiment and embodiment one is: the shape of cross section of socket 2 is circular, square, rectangle or trilateral, and the shape of cross section of solenoid coil 1 is identical with the shape of cross section of socket 2.Carry out internal surface ion with the socket that adapts to special shape and inject processing.Other is identical with embodiment one.
Embodiment four: present embodiment is described in conjunction with Fig. 2, present embodiment and embodiment one are different is that it also increases rotating mechanism is arranged, rotating mechanism is by second insulating support 24, clutch shaft bearing 25, the 3rd insulating support 26, second bearing 27, shaft coupling 28 and motor 29 are formed, second insulating support 24 and the 3rd insulating support 26 are packed on the bottom surface in the vacuum chamber 4 respectively and lay respectively at the two ends of socket 2, clutch shaft bearing 25 is packed on second insulating support 24, solenoid coil 1 and clutch shaft bearing 25 relative ends are arranged in the centre hole of clutch shaft bearing 25, second bearing 27 is packed on the 3rd insulating support 26, the centre hole that an end relative with second bearing 27 passes second bearing 27 on the solenoid coil 1 is connected with shaft coupling 28, the other end of shaft coupling 28 is connected with the output terminal of motor 29, and motor 29 is packed on the 3rd insulating support 26.Make by rotating mechanism to produce relative rotation between solenoid coil 1 and the socket 2, thereby eliminate the shade influence that on inside pipe wall, produces in the ion implantation process.Other is identical with embodiment one.
Embodiment five: present embodiment is described in conjunction with Fig. 3, present embodiment and embodiment one are different is that it also increases travel mechanism is arranged, travel mechanism is by second insulating support 24, the 3rd insulating support 26, shaft coupling 28, motor 29, first guide rail 31, first slide block 32, second slide block 33, second guide rail 34, screw rod 35 and nut 36 are formed, second insulating support 24 and the 3rd insulating support 26 are packed on the bottom surface in the vacuum chamber 4 respectively and lay respectively at the two ends of socket 2, first guide rail 31 is packed on second insulating support 24, first slide block 32 is packed on first guide rail 31, the end that solenoid coil 1 is relative with first slide block 32 is arranged in the centre hole of first slide block 32, second guide rail 34 is packed on the 3rd insulating support 26, second slide block 33 is packed on second guide rail 34, the centre hole that the end that solenoid coil 1 is relative with second slide block 33 passes second slide block 33 is connected with nut 36, nut 36 is threaded with screw rod 35, screw rod 35 is connected with shaft coupling 28, the other end of shaft coupling 28 is connected with the output terminal of motor 29, and motor 29 is packed on the 3rd insulating support 26.Make to produce between solenoid coil 1 and the socket 2 by travel mechanism to relatively move, thereby realize very long socket 2 is carried out inner surface treatment.Other is identical with embodiment one.
Embodiment six: in conjunction with Fig. 1 present embodiment is described, the following steps of passing through of present embodiment realize: one, utilize pump group system 7 that the air pressure in the vacuum chamber 4 is evacuated to base vacuum degree 5～10
-3Pa; Two, in vacuum chamber 4, charge into gas, make the air pressure in the vacuum chamber 4 reach 0.1～15Pa; Three, open radio-frequency power supply 5, be arranged on solenoid coil 1 discharge in the socket 2, at the solenoid coil 1 inside and outside inductively coupled plasma uniformly that produces axially, plasma body will be full of the internal space of socket 2, and along socket 2 axial uniform distribution; Four, the unbalanced pulse negative high voltage power source 6, the pulse negative high voltage is applied on the socket 2 by high-tension cable 20, between socket 2 internal surfaces and solenoid coil 1, form radial electric field, radial electric field makes the ion between socket 2 internal surfaces and the solenoid coil 1 be accelerated to socket 2 inwalls and flies to, promptly the inwall of socket 2 is carried out ion implantationly, injected 0.5～5 hour; Five, close pulse negative high voltage power source 6 and radio-frequency power supply 5, close pump group system 7, stop vacuum in the vacuum chamber 4, promptly finish inductively coupled plasma socket internal surface ion and inject.Gas in the step 2 is provided by oxygen cylinder 8, nitrogengas cylinder 9, acetylene cylinder 10 or argon bottle 11, oxygen cylinder 8, nitrogengas cylinder 9, acetylene cylinder 10 or argon bottle 11 are connected with under meter 13 by needle-valve 12 respectively, under meter 13 is connected with vacuum chamber 4, comes air pressure in pilot-gas flow and the vacuum chamber by needle-valve 12 and fine setting under meter 13.Form plasma sheath at socket 2 internal surfaces in the step 4, ion under the effect of sheath layer internal electric field to socket 2 internal surface accelerated motions, be injected on the inwall of socket 2, because it is ion implantation, make the ion populations in the sheath layer reduce, the ion sheath layer weakens the shielding effect of negative bias, and then causes the further repulsion of socket 2 internal surfaces to electronics, make the electronics at sheath layer edge move, end at solenoid coil 1 place at last to solenoid coil 1 direction.Plasma body all can produce in the inboard and the outside of solenoid coil 1.The present invention can also be implemented in the socket internal surface and carry out thin film deposition process, depositing carbon film (DLC) for example, by in vacuum chamber 4, charging into gases such as acetylene, can produce in the socket 2 and contain C ionic inductively coupled plasma, the C ion injects under the pulse negative high voltage effect on the socket 2 and deposits to socket 2 internal surfaces, realizes the thin film deposition of socket 2 internal surfaces.
Embodiment seven: in conjunction with Fig. 1 present embodiment is described, the gas in the step 2 of present embodiment is oxygen, nitrogen, acetylene gas or argon gas, can also be the mixing of two or more gas arbitrarily in the aforementioned gas.
Claims (7)
1, a kind of inductively coupled plasma socket internal surface ion is injected reforming apparatus, it comprises at least one socket (2), the first insulated enclosure joint (3), vacuum chamber (4), radio-frequency power supply (5), pulse negative high voltage power source (6), pump group system (7), match box (16), the second insulated enclosure joint (17), the 3rd insulated enclosure joint (18), first insulating support (19) and high-tension cable (20), the output terminal of radio-frequency power supply (5) is connected with match box (16) input terminus, the first insulated enclosure joint (3), the second insulated enclosure joint (17) and the 3rd insulated enclosure joint (18) are separately positioned on the sidewall of vacuum chamber (4), first insulating support (19) is arranged on the interior bottom surface of vacuum chamber (4), at least one socket (2) is arranged on first insulating support (19), vacuum chamber (4) is connected with pump group system (7), at least one socket (2) that one end of high-tension cable (20) passes in the 3rd insulated enclosure joint (18) and the vacuum chamber (4) is connected, the other end of high-tension cable (20) is connected with vacuum chamber (4) pulse negative high voltage power source (6) outward, it is characterized in that: it also comprises at least one solenoid coil (1), first cable (22) and second cable (23), at least one solenoid coil (1) be arranged in the socket (2) and with the coaxial setting of socket (2), one end of solenoid coil (1) is connected by the match box (16) of first cable (22) with vacuum chamber (4) outside, and first cable (22) passes the first insulated enclosure joint (3), the other end of solenoid coil (1) is connected with the ground electrode (15) of radio-frequency power supply (5) by second cable (23), and second cable (23) passes the second insulated enclosure joint (17).
2, inductively coupled plasma socket internal surface ion according to claim 1 is injected reforming apparatus, it is characterized in that: the quantity of socket (2) is 2～5, the quantity of solenoid coil (1) is identical with the quantity of socket (2), 2～5 sockets (2) are set in parallel on first insulating support (19), connect by lead between 2～5 sockets (2), pass through the lead parallel connection between each solenoid coil (1).
3, inductively coupled plasma socket internal surface ion according to claim 1 and 2 is injected reforming apparatus, it is characterized in that: the shape of cross section of socket (2) is circular, square, rectangle or trilateral, and the shape of cross section of solenoid coil (1) is identical with the shape of cross section of socket (2).
4, inductively coupled plasma socket internal surface ion according to claim 3 is injected reforming apparatus, it is characterized in that: it also comprises rotating mechanism, rotating mechanism is by second insulating support (24), clutch shaft bearing (25), the 3rd insulating support (26), second bearing (27), shaft coupling (28) and motor (29) are formed, second insulating support (24) and the 3rd insulating support (26) are packed on the interior bottom surface of vacuum chamber (4) respectively and lay respectively at the two ends of socket (2), clutch shaft bearing (25) is packed on second insulating support (24), the end that solenoid coil (1) is relative with clutch shaft bearing (25) is arranged in the centre hole of clutch shaft bearing (25), second bearing (27) is packed on the 3rd insulating support (26), the centre hole that the last end relative with second bearing (27) of solenoid coil (1) passes second bearing (27) is connected with shaft coupling (28), the other end of shaft coupling (28) is connected with the output terminal of motor (29), and motor (29) is packed on the 3rd insulating support (26).
5, inductively coupled plasma socket internal surface ion according to claim 3 is injected reforming apparatus, it is characterized in that: it also comprises travel mechanism, travel mechanism is by second insulating support (24), the 3rd insulating support (26), shaft coupling (28), motor (29), first guide rail (31), first slide block (32), second slide block (33), second guide rail (34), screw rod (35) and nut (36) are formed, second insulating support (24) and the 3rd insulating support (26) are packed on the interior bottom surface of vacuum chamber (4) respectively and lay respectively at the two ends of socket (2), first guide rail (31) is packed on second insulating support (24), first slide block (32) is packed on first guide rail (31), the end that solenoid coil (1) is relative with first slide block (32) is arranged in the centre hole of first slide block (32), second guide rail (34) is packed on the 3rd insulating support (26), second slide block (33) is packed on second guide rail (34), the centre hole that the end that solenoid coil (1) is relative with second slide block (33) passes second slide block (33) is connected with nut (36), nut (36) is threaded with screw rod (35), screw rod (35) is connected with shaft coupling (28), the other end of shaft coupling (28) is connected with the output terminal of motor (29), and motor (29) is packed on the 3rd insulating support (26).
6, a kind of inductively coupled plasma socket internal surface ion of utilizing the described device of claim 1 to carry out is injected method of modifying, and it is characterized in that: described method realizes by following steps: one, utilize pump group system (7) that the air pressure in the vacuum chamber (4) is evacuated to base vacuum degree 5～10
-3Pa; Two, in vacuum chamber (4), charge into gas, make the air pressure in the vacuum chamber (4) reach 0.1～15Pa; Three, open radio-frequency power supply (5), be arranged on solenoid coil (1) discharge in the socket (2), at the inside and outside inductively coupled plasma uniformly that produces axially of solenoid coil (1), plasma body will be full of the internal space of socket (2), and along the axial uniform distribution of socket (2); Four, unbalanced pulse negative high voltage power source (6),-300V～-the pulse negative high voltage of 30000V is applied on the socket (2) by high-tension cable (20), between socket (2) internal surface and solenoid coil (1), form radial electric field, radial electric field makes the ion between socket (2) internal surface and the solenoid coil (1) be accelerated to socket (2) inwall and flies to, promptly the inwall of socket (2) is carried out ion implantationly, injected 0.5～5 hour; Five, close pulse negative high voltage power source (6) and radio-frequency power supply (5), close pump group system (7), vacuum chamber stops vacuum in (4), promptly finishes inductively coupled plasma socket internal surface ion and injects.
7, inductively coupled plasma socket internal surface ion according to claim 6 is injected method of modifying, it is characterized in that: the gas in the step 2 is oxygen, nitrogen, acetylene gas or argon gas, can also be the mixing of two or more gas arbitrarily in the aforementioned gas.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2009100718694A CN101525738B (en) | 2009-04-23 | 2009-04-23 | Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel |
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| CN2009100718694A CN101525738B (en) | 2009-04-23 | 2009-04-23 | Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel |
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| CN101525738A true CN101525738A (en) | 2009-09-09 |
| CN101525738B CN101525738B (en) | 2011-05-11 |
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| CN103122808A (en) * | 2011-11-17 | 2013-05-29 | 株式会社三国 | Vaporizer |
| CN105088164A (en) * | 2015-08-13 | 2015-11-25 | 黄山迈瑞机械设备科技有限公司 | Bearing outer ring roller path reinforcing treatment device and treatment method |
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| CN105112883A (en) * | 2015-08-05 | 2015-12-02 | 哈尔滨工业大学 | Bias voltage regulation and control aperture plate plasma immersion ionic deposition DLC method |
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| CN100368590C (en) * | 2003-12-26 | 2008-02-13 | 中国科学院物理研究所 | Apparatus for inner surface modification by plasma source ion implantation |
| CN100543171C (en) * | 2007-08-24 | 2009-09-23 | 哈尔滨工业大学 | Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna |
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| CN103122808A (en) * | 2011-11-17 | 2013-05-29 | 株式会社三国 | Vaporizer |
| CN105112883A (en) * | 2015-08-05 | 2015-12-02 | 哈尔滨工业大学 | Bias voltage regulation and control aperture plate plasma immersion ionic deposition DLC method |
| CN105088164A (en) * | 2015-08-13 | 2015-11-25 | 黄山迈瑞机械设备科技有限公司 | Bearing outer ring roller path reinforcing treatment device and treatment method |
| CN105088165A (en) * | 2015-08-13 | 2015-11-25 | 黄山迈瑞机械设备科技有限公司 | Bearing inner ring rolling way reinforcement treatment device and treatment method |
| CN105088165B (en) * | 2015-08-13 | 2017-12-22 | 黄山明明德轴承有限公司 | A kind of bearing inner race raceway strengthening and processing device and processing method |
| CN105088164B (en) * | 2015-08-13 | 2018-01-26 | 黄山明明德轴承有限公司 | A kind of bearing outer ring ball track strengthening and processing device and processing method |
| CN106409405A (en) * | 2016-10-27 | 2017-02-15 | 施永妹 | Power device applied to wet environment |
| CN115505908A (en) * | 2022-10-08 | 2022-12-23 | 松山湖材料实验室 | DLC layer preparation device and preparation method |
| CN115505908B (en) * | 2022-10-08 | 2023-09-05 | 松山湖材料实验室 | DLC layer preparation device and preparation method |
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