CN100543171C - Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna - Google Patents
Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna Download PDFInfo
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- CN100543171C CN100543171C CNB2007100727016A CN200710072701A CN100543171C CN 100543171 C CN100543171 C CN 100543171C CN B2007100727016 A CNB2007100727016 A CN B2007100727016A CN 200710072701 A CN200710072701 A CN 200710072701A CN 100543171 C CN100543171 C CN 100543171C
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Abstract
Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna the present invention relates to the ion implanting surface modifying method for internal surface of elongated tubular.It has overcome prior art is provided with the net metal ground electrode between socket and radio-frequency antenna structure and has brought this technology can not to be applied to the defective of socket diameter details condition.It need to comprise the steps: the socket of surface modification to place in the encloses container and socket ground connection, and an end of radio-frequency antenna inserts in the encloses container and is positioned at the centerline of socket; By radio-frequency antenna intermittent emission radio frequency electromagnetic in socket, the gas generation ionization in the socket, thus in socket, produce plasma body; Emission off period at radio frequency electromagnetic passes to the positive high voltage pulse to radio-frequency antenna, forms high-voltage electric field between the socket of radio-frequency antenna and ground connection, and the positive ion in the socket is subjected to the effect of high-voltage electric field, fly to the socket inwall, finish ion implantation.
Description
Technical field
The present invention relates to the ion implanting surface modifying method for internal surface of elongated tubular.
Background technology
Internal surface of elongated tube is ion implantation to be a comparatively stubborn problem always.Adopt traditional beamline ion implanters to inject, because ion can't turn round in pipe, the elongated tubular inwall injects hardly may.A kind of plasma immersion ion injection surface modification method had been proposed in recent years.Ultimate principle is: socket is placed in the vacuum chamber, produces plasma body in the vacuum chamber, and plasma body applies negative bias then by diffusing in the socket on pipe, and ion just is accelerated and is injected into workpiece surface like this.Because plasma body is by diffusing in the pipe, density gradient (sparing property of density unevenness) is inevitable.If manage very longly, very thin, the pipe deep inside may can not get plasma body, injects and also just not to know where to begin.The someone had proposed the method for internal radio frequency plasma source afterwards, disclosed cartridge type surface plasma ion implantation and deposition method (Methodfor plasma source ion implantation and deposition for cylindrical surfaces) as United States Patent (USP) 5693376.As shown in Figure 2, utilize central electrode coupling radio frequency power to obtain to manage inner plasma body, apply negative bias on the simultaneously processed pipe and carry out ion implantation or deposition.Do not have clamped ground electrode because pipe is inner when applying negative bias on pipe, ion implantation energy can not be very high.Chinese patent ZL01115523.X discloses a kind of new structure (a kind of method of modifying inner surface of tubular workpiece) for this reason.As shown in Figure 3, add a radio-frequency antenna, overcoat net metal ground electrode in the socket inside center.Injecting high pressure is applied between netted ground electrode and the socket workpiece.Plasma body produces between central radio-frequency electrode and ground electrode, and plasma diffusion is come out, and is attracted to obtain the ion implantation effect of socket inwall by negative high voltage.Inner plasma source is arranged like this, have ground electrode clamped again simultaneously, can effectively realize ion implantation.But this patent makes that the socket diameter of handling can not be less owing to added central radio-frequency electrode and ground electrode in pipe.
Summary of the invention
The purpose of this invention is to provide a kind of ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna, brought this technology can not be applied to the defective of socket diameter details condition to overcome prior art is provided with the net metal ground electrode between socket and radio-frequency antenna structure.Method of the present invention comprises the steps: one, needs the socket 1 of surface modification to place in the encloses container 2 and socket 1 ground connection, and an end of radio-frequency antenna 3 inserts in the encloses container 2 and is positioned at the centerline of socket 1; Two, by radio-frequency antenna 3 intermittent emission radio frequency electromagnetic in socket 1, the gas generation ionization in the socket 1, thus in socket 1, produce plasma body; Three, pass to the positive high voltage pulse for radio-frequency antenna 3 at the emission off period of radio frequency electromagnetic, 1 of the socket of radio-frequency antenna 3 and ground connection forms high-voltage electric field, and socket 1 interior positive ion is subjected to the effect of high-voltage electric field, fly to socket 1 inwall, finish ion implantation.
Description of drawings
Fig. 1 is a structural representation of the present invention, Fig. 2 is the synoptic diagram of United States Patent (USP) 5693376 disclosed cartridge type surface plasma ion implantation and deposition methods, Fig. 3 is the synoptic diagram of the method for the disclosed modifying inner surface of tubular workpiece of Chinese patent ZL01115523.X, Fig. 4 is a radio frequency electromagnetic of the present invention and a kind of synoptic diagram of order relation mutually of positive high voltage pulse, Fig. 5 is a radio frequency electromagnetic and the another kind of synoptic diagram of order relation mutually of positive high voltage pulse, Fig. 6 is the synoptic diagram along the relative distribution of socket length direction plasma density that the inventive method obtains, wherein transverse axis is the socket length direction, and the longitudinal axis is the plasma density value.
Embodiment
Embodiment one: specify present embodiment below in conjunction with Fig. 1.Present embodiment is made up of following step: one, need the socket 1 of surface modification to place in the encloses container 2 and socket 1 ground connection, an end of radio-frequency antenna 3 inserts in the encloses container 2 and is positioned at the centerline of socket 1; Two, by radio-frequency antenna 3 intermittent emission radio frequency electromagnetic in socket 1, the gas generation ionization in the socket 1, thus in socket 1, produce plasma body; Three, pass to the positive high voltage pulse for radio-frequency antenna 3 at the emission off period of radio frequency electromagnetic, 1 of the socket of radio-frequency antenna 3 and ground connection forms high-voltage electric field, and socket 1 interior positive ion is subjected to the effect of high-voltage electric field, fly to the socket inwall, finish ion implantation.
Adoptable high-voltage pulse is 1-50kV in the step 3, and pulse-repetition 1-500Hz fills multiple gases such as oxygen, nitrogen, argon gas, methane or acetylene as ionized gas takes place in the encloses container 2.The power of radio frequency electromagnetic is 20W-2000W in the step 2.In socket 1 inside of length 200mm, diameter 50mm, be to measure plasma density under the 7Pa condition to distribute as shown in Figure 6 relatively at air pressure.Plasma density is that plasma body slightly raises at the two ends of socket 1 length direction uniformly at length direction, because fringing effect causes.
Embodiment two: the difference of present embodiment and embodiment one is: the carrying out in the process of step 2 and step 3, socket 1 are in the state that rotates around self axial line.So operation can improve the homogeneity that ion radially injects socket 1, thus the radial position offset of compensation socket 1 or radially inhomogeneous cause ion implantation inhomogeneous of discharge.Make the socket swivel arrangement of socket 1 rotation comprise motor 11, shaft coupling 9, pinion(gear) 7, master wheel 14, body 15, thrust bearing 12 and support 13, the axle of motor 11 is fixed on the gear shaft 8 of pinion(gear) 7 by shaft coupling 9, gear shaft 8 is an insulating material, pinion(gear) 7 is meshed with master wheel 14, the gear ring of master wheel 14 is enclosed within on the outer round surface of body 15 and with it and fixes, body 15 is fixed on the outer round surface of socket 1 lower end, and body 15 is located on the support 13 by thrust bearing 12.The transmission chain that present embodiment is formed by motor 11 and each parts drives socket 1 rotation.Radio-frequency antenna 3 penetrates encloses container 2 parts and is provided with isolator 16, the axle of motor 11 penetrates encloses container 2 parts and is provided with isolator 17 and dynamic seal 10, dynamic seal 10 is arranged between the axle of isolator 17 and motor 11, and isolator 17 is arranged between the wall of dynamic seal 10 and encloses container 2.
Embodiment three: the difference of present embodiment and embodiment one is: charge into methane or acetylene gas in the encloses container 2.Charge into gases such as methane, acetylene, can realize the diamond like carbon film deposition of socket 1 internal surface.
Embodiment four: the difference of present embodiment and embodiment one is: socket 1 adopts cathode materials such as Cr, Ti, Zr, Fe, Cu, fills argon gas in the encloses container 2.Can obtain the coating of pure metal at socket 1 internal surface by the self-bias splash effect.
Embodiment five: the difference of present embodiment and embodiment four is: fill reactant gasess such as methane, oxygen, nitrogen or acetylene in the encloses container 2, socket 1 internal surface can obtain thin film depositions such as TiN, CrN, ZrN, TiCN.
Embodiment six: the difference of present embodiment and embodiment one is: the other end of radio-frequency antenna 3 is connected with high-voltage pulse circuit 4 and radio circuit 5, high-voltage pulse circuit 4 is made up of high-voltage pulse power source 4-1 and low-pass filter 4-2, and high-voltage pulse power source 4-1 is connected on the radio-frequency antenna 3 to export high-voltage pulse signal to it by low-pass filter 4-2; Radio circuit 5 is made up of radio frequency generators 5-1, variable capacity C1, inductance L, resistance R and No. two capacitor C 2, the output terminal of radio frequency generators 5-1 connects an end, an end of No. two capacitor C 2 and an end of inductance L of resistance R, the other end of resistance R connects the other end and the ground connection of No. two capacitor C 2, the other end of inductance L connects the end of variable capacity C1, and the other end of variable capacity C1 is connected on the radio-frequency antenna 3.
In general do not allow to seal in radio circuit in the high-voltage circuit system, in order to avoid breakdown device and hurting sb.'s feelings; Can not seal in high-tension circuit in the radio circuit simultaneously, in order to avoid cause device breakdown, inefficacy.As shown in Figure 1, the coupling by C1, L and C2 and low-pass filter makes and does not disturb mutually between high-tension circuit and the radio circuit; The key here is to make C2 go up by C1 and C2 series connection dividing potential drop to obtain less dividing potential drop, thereby avoids the influence of high pressure to radio circuit.Low-pass filter mainly is made up of inductance, and this wave filter leads to low frequency, resistance high frequency.The signal impulse frequency that produces at real work mesohigh pulse power 4-1 generally only has the hundreds of hertz, well below rf frequency, thereby can effectively avoid the influence of radio frequency to high-tension circuit by this low-pass filter.The sequential relationship of high voltage pulse S2 and wave packet S1 can replace by high-voltage pulse of a radio frequency shown in Figure 4 and 5, also a plurality of pulses can be arranged in the middle of wave packet.
Claims (7)
1, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna, it is characterized in that it comprises the steps: one, needs the socket (1) of surface modification to place in the encloses container (2) and socket (1) ground connection, an end of radio-frequency antenna (3) inserts in the encloses container (2) and is positioned at the centerline of socket (1); Two, by radio-frequency antenna (3) intermittent emission radio frequency electromagnetic in socket (1), the gas generation ionization in the socket (1), thus in socket (1), produce plasma body; Three, pass to the positive high voltage pulse for radio-frequency antenna (3) at the emission off period of radio frequency electromagnetic, form high-voltage electric field between the socket (1) of radio-frequency antenna (3) and ground connection, positive ion in the socket (1) is subjected to the effect of high-voltage electric field, fly to socket (1) inwall, finish ion implantation.
2, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 1 is characterized in that filling in the encloses container (2) oxygen, nitrogen or argon gas as ionized gas takes place.
3, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 1 is characterized in that carrying out in the process of step 2 and step 3, and socket (1) is in the state that rotates around self axial line.
4, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 3, it is characterized in that making the socket swivel arrangement of socket 1 rotation to comprise motor (11), shaft coupling (9), pinion(gear) (7), master wheel (14), body (15), thrust bearing (12) and support (13), the axle of motor (11) is fixed on the gear shaft (8) of pinion(gear) (7) by shaft coupling (9), gear shaft (8) is an insulating material, pinion(gear) (7) is meshed with master wheel (14), the gear ring of master wheel (14) is enclosed within on the outer round surface of body (15) and with it and fixes, body (15) is fixed on the outer round surface of socket (1) lower end, and body (15) is located on the support (13) by thrust bearing (12).
5, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 1 is characterized in that charging into methane or acetylene gas in the encloses container (2).
6, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 1 is characterized in that socket (1) adopts Cr, Ti, Fe, Cu or Zr as cathode material, fills argon gas in the encloses container (2).
7, ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna according to claim 1, the other end that it is characterized in that radio-frequency antenna (3) is connected with high-voltage pulse circuit (4) and radio circuit (5), high-voltage pulse circuit (4) is made up of high-voltage pulse power source (4-1) and low-pass filter (4-2), and high-voltage pulse power source (4-1) is connected radio-frequency antenna (3) by low-pass filter (4-2) and goes up to export high-voltage pulse signal to it; Radio circuit (5) is made up of radio frequency generators (5-1), variable capacity (C1), inductance (L), resistance (R) and No. two electric capacity (C2), the output terminal of radio frequency generators (5-1) connects an end, an end of No. two electric capacity (C2) and an end of inductance (L) of resistance (R), the other end of resistance (R) connects the other end and the ground connection of No. two electric capacity (C2), the other end of inductance (L) connects an end of variable capacity (C1), and the other end of variable capacity (C1) is connected on the radio-frequency antenna (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100727016A CN100543171C (en) | 2007-08-24 | 2007-08-24 | Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2007100727016A CN100543171C (en) | 2007-08-24 | 2007-08-24 | Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101130855A CN101130855A (en) | 2008-02-27 |
| CN100543171C true CN100543171C (en) | 2009-09-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2007100727016A Expired - Fee Related CN100543171C (en) | 2007-08-24 | 2007-08-24 | Ion implanting surface modifying method for internal surface of elongated tube coupling with radio antenna |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101365289B (en) * | 2008-09-28 | 2011-05-11 | 哈尔滨工业大学 | Device and method for injecting ion on inner surface of hollow cathode coupling positive voltage bias voltage tube |
| CN101525738B (en) * | 2009-04-23 | 2011-05-11 | 哈尔滨工业大学 | Internal surface ion implantation modification device and method of inductively coupled plasmatube barrel |
| CN104485511B (en) * | 2014-12-04 | 2017-03-29 | 西安电子工程研究所 | A kind of grade is adjustable hyperbar antenna house |
| CN113293357B (en) * | 2021-05-25 | 2022-10-18 | 哈尔滨工业大学 | Method for depositing diamond-like coating on inner wall of pulse composite radio frequency enhanced hollow cathode long tube |
| CN113543443A (en) * | 2021-06-29 | 2021-10-22 | 徐子一 | Plasma generating device and method for processing object |
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- 2007-08-24 CN CNB2007100727016A patent/CN100543171C/en not_active Expired - Fee Related
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| Publication number | Publication date |
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| CN101130855A (en) | 2008-02-27 |
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Granted publication date: 20090923 Termination date: 20120824 |