CN102413627B - Method for changing parameter of plasma - Google Patents
Method for changing parameter of plasma Download PDFInfo
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- CN102413627B CN102413627B CN 201110207454 CN201110207454A CN102413627B CN 102413627 B CN102413627 B CN 102413627B CN 201110207454 CN201110207454 CN 201110207454 CN 201110207454 A CN201110207454 A CN 201110207454A CN 102413627 B CN102413627 B CN 102413627B
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- plasma
- outer conductor
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- inner wire
- ion
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- 238000000034 method Methods 0.000 title claims abstract description 41
- 150000002500 ions Chemical class 0.000 claims abstract description 50
- 239000004020 conductor Substances 0.000 claims abstract description 41
- 239000007789 gas Substances 0.000 claims description 45
- 150000001768 cations Chemical class 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 7
- 238000006386 neutralization reaction Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910001423 beryllium ion Inorganic materials 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000003723 Smelting Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- Plasma Technology (AREA)
Abstract
The invention relates to a method for changing a parameter of a plasma. According to the method, an ion generation device is used for generating positive ions, and the positive ions are introduced into the plasma to be neutralized with electrons in the plasma so as to change the parameter of the plasma. The ion generation device comprises a working gas storage tank (1), a plasma torch (2), a microwave source (3) and a coil (4), wherein the plasma torch (2) comprises an outer conductor (5), an inner conductor (6), a short-circuiting piston (7) and a nozzle (8) which are arranged coaxially; and the short-circuiting piston (7) is arranged between the outer conductor (5) and the inner conductor (6), the microwave source (3) is arranged on an energy feed-in point at the front end of the outer conductor (5), a covering coil (4) is wrapped outside the front part of the outer conductor (5) and is used for generating a spiral magnetic field after being electrified. The method is not performed only in a closed cavity, and simultaneously the problem that the parameter of the plasma generated in the nature cannot be controlled is solved.
Description
Technical field
The present invention relates to low temperature plasma and produce and control field, particularly, the present invention relates to a kind of method that changes plasma parameter.
Background technology
The ionized gas shape material that the positron-electron that atom after plasma is deprived of by portions of electronics and atom are ionized rear generation forms, often be considered to be and remove outside the solid, liquid, gas, the 4th attitude that material exists is widely used in plasma smelting, plasma spray coating and the plasma welding field.Have widely and use, the ion generation method of its applying plasma comprises: 1. radio frequency electrical is used high-temperature plasma, plasma wave research etc. from plasma source.2. Ecr plasma source.3. microwave plasma source, application of cold temperature plasma, space environment simulation, plasma antenna etc.4. bundle-plasma ion source, utilization be electron beam or the discharge of straight line direct-current arc between negative electrode and anode.Electron beam interacts with the gas that comprises useful component and produces plasma, and ion is drawn from plasma, then accelerates to the energy of hope with the electrode handle ion that separates.Their common feature is exactly all to be to produce in confined space.
Existing Artificial Control changes the plasma parameter technology, all is by gas density in the control chamber, or changes interelectrode electric field strength, reaches the purpose that changes plasma parameter.But the method for the density by changing intracavity gas requires and must carry out in closed container, change also be plasma density in the container; In addition, can also be by changing the parameter of interelectrode electric field strength and then change plasma, but the method only is confined to change the parameter of artificial produced plasma, for spontaneous plasma (producing high temperature such as lightning, arc discharge, high-speed motion friction), also there is not at present good method to solve.
Therefore, the means that at present plasma carries out parameter control in airtight container only are to change the density in the cavity and change interelectrode electric field strength, its application is restricted, can't regulates and control for the plasma that produces in the non-enclosed environment of occurring in nature simultaneously.
Summary of the invention
The object of the invention is to provides a kind of method that changes plasma parameter in order to overcome the problems referred to above.
To achieve these goals, the method for change plasma parameter provided by the invention may further comprise the steps:
Adopt ion generating apparatus to produce cation, then cation is passed into and with plasma in the electronics neutralization, to change the parameter of plasma.
Described ion generating apparatus comprises working gas holding vessel 1, plasma torch 2, microwave source 3 and coil 4;
Described plasma torch 2 comprises outer conductor 5, inner wire 6, short-circuit plunger 7 and the spout 8 of coaxial setting, and described short-circuit plunger 7 is between outer conductor 5 and inner wire 6;
Described microwave source 3 is arranged on the energy load point of outer conductor 5 front ends, is used for the energy feed-in, forms microwave cavity 9 between outer conductor 5 and inner wire 6 and the short-circuit plunger 7;
Described outer conductor 5 anterior outside voluble wrapping coils 4 are used for producing helical magnetic field after the energising, and the effect of helical magnetic field is to control ion by certain direction and speed motion, simultaneously the ion that produces is separated with electronics.
The method of the invention specifically may further comprise the steps:
1) working gas enters after Flow-rate adjustment in the inner wire 6, and microwave source 3 provides energy for described working gas by inner wire 6 and outer conductor 5, ionizes behind the working gas absorbed energy, ionizes to be ion and electronics with positive charge;
2) described ion and electronics with positive charge deflects in the magnetic field that the solenoid that outer conductor 5 coats produces, and electron mass is little, radius of gyration is absorbed by cavity inner wall greatly, and positively charged ion then overflows from spout 8;
3) the positively charged ion that separation is obtained is passed in the plasma of high electron density, neutralizes with ion and the electronegative electronics of positive charge, to change the parameter of plasma.
According to the method for change plasma parameter of the present invention, described step 1) further comprising the steps of in:
By regulating and outer conductor 5, inner wire 6 coaxial sheathed adjusting short-circuit plungers 7 and the position between the outer conductor 5, making and regulating short-circuit plunger 7 is 3/4 of microwave wavelength with inner wire 6 and outer conductor 5 formed resonant cavity 9 length, to guarantee that microwave energy fully absorbs.
Described working gas is inert gas.
Be used for realizing that the present invention changes the ion generating apparatus of the method for plasma parameter:
Described working gas holding vessel 1 is provided with flow controller 10.
All adopt between described short-circuit plunger 7 and outer conductor 5 and the inner wire 6 and be threaded, and be provided with locking device, with the method adjusting short-circuit plunger of screw thread precession, back-out and the relative position between outer conductor and the inner wire, lock by locking device after namely regulating correct position, prevent from moving, inner wire also can by the rotation adjusting position, can make adjusting more accurate in this way, and after adjusting is finished, fixing easier.
The working gas that described working gas holding vessel 1 adopts is inert gas, comprises argon gas or helium.
" short-circuit plunger ", refer at the piston end surface place, form the short circuit face of electricity, when regulating short-circuit plunger, the absorbed situation of observation microwave power, can be absorbed to greatest extent near certain a bit (cavity length is 3/4 wavelength) microwave power, microwave power be reached to greatest extent absorb, in the spout ejection, produce ion at gas.
Method according to change plasma parameter of the present invention, described method based on device be to utilize plasma torch, under the acting in conjunction of working gas, microwave power source, helical magnetic field, produce ion and make ion eject according to a certain direction (being ejected on the plasma) with speed, reach the effect that changes plasma density
According to one embodiment of the invention, its concrete implementation is: working gas enters in the inner wire 6 after the adjusting of flow controller 10, regulate short-circuit plunger 7 and outer conductor 5 between the position, make and regulate short-circuit plunger 7 and inner wire 6 and outer conductor 5 formed cavity lengths about 3/4 wavelength, described gas ionizes at the energy that absorbing microwave source 3 provides, ionization is ion and electronics with positive charge, described with positive charge ion and electronics after the solenoid energising, produce along deflecting in the magnetic field of cavity direction, wherein electron mass is less, radius of gyration is larger, the relative electronics of cation quality is very large, radius of gyration is less, pass through in the process of inner wire 6 at charged particle, electronics is absorbed at cavity inner wall because radius of gyration is large, positively charged ion is similar to the maintenance rectilinear motion and overflows from the mouth of pipe in traveling process, thereby realized separating of positively charged ion and electronics, separating the positively charged ion obtain accelerates out to enter afterwards the plasma of the high electron density that the needs of quasi-neutrality are neutralized from inner wire 6, carry out the neutralization of positive and negative charge by normal cation and electronegative electronics, reach the effect that reduces plasma density.Simultaneously in the present invention by the control gas flow, microwave power, the ion concentration that control produces, wherein gas flow is large, and microwave power is higher, and the ion concentration of generation is larger, and after plasma neutralized, plasma density was just low.Concrete data can be passed through the probe test plasma density.
Therefore during device work of the present invention, working gas flows out in gas cylinder with certain flow, through the endoporus of gas conduit, spray from gas spout, simultaneously, helical magnetic field is started working, and microwave source provides energy, regulate at short-circuit plunger in the situation of coupling, microwave energy is produced ion, under the effect of helical magnetic field by GAS ABSORPTION, ion spraying reaches the purpose that changes plasma parameter to plasma.
The invention has the advantages that:
No longer be confined to carry out in the airtight cavity when 1) carrying out the control of parameter by method plasma of the present invention, solved the out of contior problem of plasma parameter that occurring in nature produces, use more extensive.
2) can control the plasma parameter at specific region (position), adopt the parameter of the method change plasma of ejected ion of the present invention, effective for the fricative plasma of high-speed motion, after declaring the quasi-friction position, ionization can be located in this, change plasma density, by the plasma density at Artificial Control specific region (position), therefore control is more flexible in other words.
3) apparatus structure of realization the inventive method is small and exquisite under limited size condition, has finished the energy feed-in flexibly, ionization excitation process, and this is that other ionization devices institutes are inaccessiable; By changing microwave energy size and working gas flow, can change ion energy and the density of ionization, carry out meticulous adjusting thereby treat neutralization part plasma parameter; Thereby the plasma particular location that nozzle exit area can accurately be controlled the needs neutralization carries out the parameter adjusting.
4) in the method for the present invention, can regulate the helical magnetic field in the device of realizing the method, and then adjust nozzle and go out to flow the positive and negative charge ratio, magnetic field increases can be with electronics all absorption and cavity inner wall, make to draw the stream particle beams and formed by cation, and then farthest and electronics; Magnetic field reduces to make and draws the stream particle beams and contain portions of electronics, and then in reducing and the electronics dynamics.
Description of drawings
Fig. 1 is the structural representation of the ion generating apparatus for plasma parameter control of the present invention.
The accompanying drawing sign
1, working gas holding vessel 2, plasma torch 3, microwave source
4, coil 5, outer conductor 6, inner wire
7, short-circuit plunger 8, spout 9, microwave cavity
10, flow controller 11, gas conduit 12, microwave cable
Embodiment
Be further described below in conjunction with the method for accompanying drawing to the ion generating apparatus for plasma parameter control of the present invention and change plasma.
As shown in Figure 1, the present invention is used for realizing that the device of plasma parameter control method comprises working gas holding vessel 1, plasma torch 2, microwave source 3, coil 4 and flow controller 10;
Described plasma torch 2 comprises outer conductor 5, inner wire 6, short-circuit plunger 7 and the spout 8 of coaxial setting, and described short-circuit plunger 7 is between outer conductor 5 and inner wire 6; Described microwave source 3 is arranged on the energy load point of outer conductor 5 front ends, is used for the energy feed-in, forms microwave cavity 9 between outer conductor 5 and inner wire 6 and the short-circuit plunger 7; Described outer conductor 5 anterior outside voluble wrapping coils 4 are used for producing helical magnetic field after the energising, and the effect of helical magnetic field is to control ion by certain direction and speed motion, simultaneously the ion that produces is separated with electronics.
Described working gas holding vessel 1 is provided with flow controller 10, all adopt between described short-circuit plunger 7 and outer conductor 5 and the inner wire 6 and be threaded, and be provided with locking device, regulate relative position between short-circuit plunger and outer conductor and the inner wire with the method for screw thread precession, back-out, namely regulate behind the correct position by locking device locking, prevent movement, inner wire also can be by the rotation adjusting position, can make in this way adjusting more accurate, and regulate finish after, fixing easier.
The working gas that described working gas holding vessel 1 adopts is inert gas, " short-circuit plunger ", refer at the piston end surface place, form the short circuit face of electricity, when regulating short-circuit plunger, the absorbed situation of observation microwave power can be absorbed to greatest extent near certain a bit (cavity length is 3/4 wavelength) microwave power, microwave power is reached to greatest extent absorb, in the spout ejection, produce ion at gas.
Method according to change gas ions parameter of the present invention, it specifically comprises: working gas enters in the inner wire 6 after the adjusting of flow controller 10, regulate short-circuit plunger 7 and outer conductor 5 between the position, make and regulate short-circuit plunger 7 and inner wire 6 and outer conductor 5 formed cavity lengths about 3/4 wavelength, described gas ionizes at the energy that absorbing microwave source 3 provides, ionization is ion and electronics with positive charge, described with positive charge ion and electronics after the solenoid energising, produce along deflecting in the magnetic field of cavity direction, wherein electron mass is less, radius of gyration is larger, the relative electronics of cation quality is very large, radius of gyration is less, pass through in the process of inner wire 6 at charged particle, electronics is absorbed at cavity inner wall because radius of gyration is large, positively charged ion is similar to the maintenance rectilinear motion and overflows from the mouth of pipe in traveling process, thereby realized separating of positively charged ion and electronics, separating the positively charged ion obtain accelerates out to enter afterwards the plasma of the high electron density that the needs of quasi-neutrality are neutralized from inner wire 6, carry out the neutralization of positive and negative charge by normal cation and electronegative electronics, reach the effect that reduces plasma density.Simultaneously in the present invention by the control gas flow, microwave power, the ion concentration that control produces, wherein gas flow is large, and microwave power is higher, and the ion concentration of generation is larger, and after plasma neutralized, plasma density was just low.Concrete data can be passed through the probe test plasma density.
It should be noted last that above embodiment is only unrestricted in order to technical scheme of the present invention to be described.Although with reference to embodiment the present invention is had been described in detail, those of ordinary skill in the art is to be understood that, technical scheme of the present invention is made amendment or is equal to replacement, do not break away from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of the claim scope of the present invention.
Claims (7)
1. a method that changes plasma parameter is characterized in that, described method produces cation by ion generating apparatus, with cation pass in the plasma with plasma in the electronics neutralization, to change the parameter of plasma;
Described ion generating apparatus comprises working gas holding vessel (1), plasma torch (2), microwave source (3) and coil (4);
Described plasma torch (2) comprises outer conductor (5), inner wire (6), short-circuit plunger (7) and the spout (8) of coaxial setting, and described short-circuit plunger (7) is arranged between outer conductor (5) and the inner wire (6); Described microwave source (3) is arranged on the energy load point of outer conductor (5) front end, is used for the energy feed-in, forms microwave cavity (9) between outer conductor (5) and inner wire (6) and the short-circuit plunger (7);
The anterior outside of described outer conductor (5) voluble wrapping coil (4) is used for producing helical magnetic field after the energising.
2. the method for change plasma parameter according to claim 1 is characterized in that, described working gas holding vessel (1) is provided with flow controller (10).
3. the method for change plasma parameter according to claim 1, it is characterized in that, all adopt between described short-circuit plunger (7) and outer conductor (5) and the inner wire (6) to be threaded, and be provided with locking device, be used for moving and fix this short-circuit plunger (7).
4. the method for change plasma parameter according to claim 1 is characterized in that, said method comprising the steps of:
1) working gas enters after Flow-rate adjustment in the inner wire (6), microwave source (3) provides energy for described working gas by inner wire (6) and outer conductor (5), ionize behind the working gas absorbed energy, ionize and be ion and electronics with positive charge;
2) described ion and electronics with positive charge deflects in the magnetic field that the solenoid that outer conductor (5) coats produces, and electron mass is little, radius of gyration is absorbed by cavity inner wall greatly, and positively charged ion then overflows from spout (8);
3) the positively charged ion that separation is obtained is passed in the plasma of high electron density, neutralizes with ion and the electronegative electronics of positive charge, to change the parameter of plasma.
5. the method for change plasma parameter according to claim 1 is characterized in that, and is further comprising the steps of in the described step 1):
By regulating and outer conductor (5), the coaxial sheathed adjusting short-circuit plunger (7) of inner wire (6) and the position between the outer conductor (5), making and regulating short-circuit plunger (7) is 3/4 of microwave wavelength with inner wire (6) and the formed resonant cavity of outer conductor (5) (9) length, to guarantee that microwave energy fully absorbs.
6. the method for change plasma parameter according to claim 4 is characterized in that, controls the flow of working gas in the described step 1) by flow controller (10).
7. the method for change plasma parameter according to claim 4 is characterized in that, working gas is inert gas in the described step 1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110207454 CN102413627B (en) | 2011-07-22 | 2011-07-22 | Method for changing parameter of plasma |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110207454 CN102413627B (en) | 2011-07-22 | 2011-07-22 | Method for changing parameter of plasma |
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| CN102413627A CN102413627A (en) | 2012-04-11 |
| CN102413627B true CN102413627B (en) | 2013-03-20 |
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| KR101677005B1 (en) * | 2016-04-05 | 2016-11-17 | (주)화인솔루션 | Plasma Processing Appratus of Controlling Electric Charge |
| EP4216679A4 (en) * | 2020-09-15 | 2024-03-06 | Shimadzu Corporation | Radical generation device and ion analysis device |
| CN112853738B (en) * | 2021-01-05 | 2022-01-18 | 西南交通大学 | Plasma modification device based on electromagnetic field regulation and control |
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| US5911832A (en) * | 1996-10-10 | 1999-06-15 | Eaton Corporation | Plasma immersion implantation with pulsed anode |
| CN1256462C (en) * | 2003-12-31 | 2006-05-17 | 北京工业大学 | Hot wire auxiliary microwave electron rotating resonance chamical gas phase settling method and device |
| CN2735710Y (en) * | 2004-09-11 | 2005-10-19 | 石家庄钢铁股份有限公司 | A plasma driving device |
| CN1800441B (en) * | 2005-01-05 | 2010-09-01 | 鸿富锦精密工业（深圳）有限公司 | Precipitation method and device for plasma reinforced film |
| CN100562207C (en) * | 2006-04-06 | 2009-11-18 | 中芯国际集成电路制造(上海)有限公司 | The method that suppresses plasma unstable |
| CN101378616A (en) * | 2008-10-13 | 2009-03-04 | 电子科技大学 | Atmosphere plasma cylindrical microwave excitation cavity |
| CN101713065B (en) * | 2009-12-13 | 2012-03-21 | 大连理工大学 | Device for microwave plasma based low-energy ion implantation on internal surface of metal round pipe with small pipe diameter |
| CN102129950B (en) * | 2011-01-28 | 2012-05-30 | 浙江大学 | Microwave plasma ordinary-pressure desorption ionization source and application thereof in mass spectrum analysis |
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Address after: 100190 No. two south of Zhongguancun, Haidian District, Beijing 1 Patentee after: NATIONAL SPACE SCIENCE CENTER, CAS Address before: 100190 No. two south of Zhongguancun, Haidian District, Beijing 1 Patentee before: NATIONAL SPACE SCIENCE CENTER, CHINESE ACADEMY OF SCIENCES |
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Granted publication date: 20130320 |