CN114900938B - Ion velocity vector controllable high-density plasma source - Google Patents
Ion velocity vector controllable high-density plasma source Download PDFInfo
- Publication number
- CN114900938B CN114900938B CN202210622397.2A CN202210622397A CN114900938B CN 114900938 B CN114900938 B CN 114900938B CN 202210622397 A CN202210622397 A CN 202210622397A CN 114900938 B CN114900938 B CN 114900938B
- Authority
- CN
- China
- Prior art keywords
- plasma
- density
- energy
- icr
- antenna
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 48
- 239000007921 spray Substances 0.000 claims abstract description 15
- 150000002500 ions Chemical class 0.000 claims description 63
- 230000005684 electric field Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 230000001276 controlling effect Effects 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 8
- 230000002776 aggregation Effects 0.000 claims description 4
- 238000004220 aggregation Methods 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 230000009471 action Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 230000001939 inductive effect Effects 0.000 claims description 3
- 230000008859 change Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000003628 erosive effect Effects 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 120
- 239000002245 particle Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000007935 neutral effect Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/02—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma
- H05H1/10—Arrangements for confining plasma by electric or magnetic fields; Arrangements for heating plasma using externally-applied magnetic fields only, e.g. Q-machines, Yin-Yang, base-ball
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/54—Plasma accelerators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optics & Photonics (AREA)
- Plasma Technology (AREA)
Abstract
The invention relates to the technical field of plasma sources, and provides a high-density plasma source with controllable ion velocity vector, wherein working medium gas is distributed by a flow controller and then enters an MPDA module through a pipeline for preliminary ionization, and the obtained low-density plasma enters a ceramic discharge cavity through an inlet end; under the constraint of the magnetic field of the magnetic mirror array, seed electrons in the ceramic discharge cavity continuously ionize the low-density plasma; adjusting the ion speed direction and the ion size of the high-density high-energy plasma; the high-density high-energy plasma breaks through the constraint of the magnetic mirror array, converges towards the plasma leading-out end of the ceramic discharge cavity, and is accelerated to be sprayed out from the magnetic spray pipe of the plasma leading-out end. The scheme of the invention realizes the purposes of high plasma energy, high ionization rate and strong controllability.
Description
Technical Field
The invention relates to the technical field of plasma sources, in particular to a high-density plasma source with controllable ion velocity vector.
Background
The fourth state of the plasma, called a substance, is a mixed gas which is composed of charged particles such as electrons and ions and neutral particles (atoms, molecules, particles, etc.), macroscopically shows quasi-neutrality, and has a collective effect.
The plasma is typically generated by heating a gas, and discharging the gas. The gas may be partially ionized or fully ionized during heating, i.e., the outer electrons of the atoms may break away from the confinement of the nuclei into free electrons, while the atoms losing the outer electrons become charged ions. When the proportion of charged particles exceeds a certain level, the ionized gas exhibits significant electromagnetic properties.
Plasma sources, as the name implies, are devices that produce plasma, typically using electrode discharge to ionize a working fluid gas to produce plasma or by wave heating electrons to strike a neutral working fluid gas to produce a discharge. The low-temperature plasma sources commonly used in laboratories are rich in variety, and the action mechanisms of different plasma sources are different. Common low temperature plasma sources are the following: (1) And D.C. discharging, in which two metal electrodes are inserted into the low-pressure gas and a DC voltage is applied, and when the voltage is increased to a certain value, the gas is found to conduct electricity and emit light. (2) Alternating current discharge, when an alternating current electric field is applied to two electrodes of a discharge tube, each electrode alternately becomes an anode or a cathode. If the voltage applied in the half period exceeds the breakdown voltage, an ac discharge is obtained. (3) An electron cyclotron resonance plasma source (ECR: electron Cyclotron Resonance) operates in the microwave band and heats the plasma by microwaves. (4) A Helicon wave plasma source (HWP: helicon-WAVE PLASMA) couples energy to Helicon wave through an antenna by an external radio frequency power supply, and the Helicon wave propagates the energy to electrons by Lang damping, thereby generating a stable discharge phenomenon. (5) A radio frequency capacitively coupled plasma source (CCP: CAPATIVELY COUPLED PLASMA) is provided with a radio frequency power supply connected to two capacitor plates, an oscillating electric field is generated between the two plates, electrons are accelerated in the oscillating electric field, and the electrons continuously strike neutral particles to form an electron avalanche effect, so that discharge is stabilized.
The ion speed in the plasmas generated by the common plasma source is not controllable, the generated plasmas are low in density, and the research requirements of high density and controllable ion speed cannot be met.
Disclosure of Invention
In view of this, the invention provides a high-density plasma source with controllable ion velocity vector, so as to solve the problems that in the prior art, the ion velocity in the plasma generated by the plasma source is uncontrollable, the generated plasma density is lower, and the research requirements of high density and controllable ion velocity cannot be met.
In a first aspect of the present invention, there is provided a high density plasma source with controllable ion velocity vector, comprising two sets of: the MPDA module 5, the magnetic mirror power supply 6, the electromagnetic coil 7, the ICR antenna 11, the ICR power source 8, the working medium storage tank 1, the flow controller 2 and the pipeline 3, and further comprises the pulse electromagnetic valve antenna 12, the pulse electromagnetic control unit 14, the magnetic spray pipe 15 and the ceramic discharge cavity 16, wherein the two sets of equipment are symmetrically arranged on two sides of the ceramic discharge cavity 16;
The MPDA module 5 comprises an MPDA power supply 4 and a magnetic plasma arc plasma source (MPDA), wherein working medium gas in the working medium storage tank 1 enters the flow controller 2 through a pipeline 3, then enters the MPDA module 5 through the pipeline 3, the working medium gas is primarily ionized, and generated seed electrons and low-density plasma enter the ceramic discharge cavity 16;
the electromagnetic coil 7 is positioned at the outer side of the ceramic discharge cavity 16, the magnetic mirror power supply 6 and the electromagnetic coil 7 form a magnetic mirror array, the low-density plasma is restrained and gathered under the control of the electromagnetic coil 7, the seed electrons continuously ionize the low-density plasma, and the ionization rate of the plasma is improved;
The ICR antenna 11 is wound on the outer side of the ceramic discharge cavity 16, the ICR antenna 11 and the ICR power source 8 form an ICR discharge module, and the ICR discharge module is used for injecting energy into the low-density plasma to obtain high-density high-energy plasma;
The pulse electromagnetic valve antenna 12 is wound on a magnetic core 13 to form a coil and is connected with the pulse electromagnetic control unit 14, the pulse electromagnetic valve antenna 12 is introduced with high-frequency variable current to obtain a magnetic field generated by alternating current, the direction and the size of the induced magnetic field are changed by controlling the inclination angle, the pulse duty ratio and the current size of the coil, the ion speed direction and the size of the high-density high-energy plasma are regulated, and the high-density high-energy plasma is accelerated and led out after being focused;
the magnetic nozzle 15 forms an electromagnetic accelerating structure for further accelerating the high-density high-energy plasma, so that the high-density high-energy plasma is accelerated and ejected at the plasma outlet end of the ceramic discharge cavity 16.
Further, the seed electrons include high energy electrons.
Furthermore, the ICR discharge module is of an electrodeless structure so as to reduce corrosion to electrodes and realize a high-power working mode.
Further, the magnetic mirror array is to restrict the low-density plasma under a set energy threshold value by adjusting a magnetic mirror power supply 6, and obtain high-density plasma through multiple energy injections.
Further, the ICR antenna 11 is located near the magnetic mirror array, and cooling water 9 is introduced into the ICR antenna to achieve the purpose of reducing the working temperature of the antenna;
the ICR power source 8 is used for feeding power into the ceramic discharge cavity 16 through the ICR antenna 11 to heat ions in plasma and improve the density and ion energy of the low-density plasma.
Further, the outer surface of the ICR antenna 11 is wrapped with a soft iron metal layer with a set thickness, and is insulated from the ICR antenna 11, so that electromagnetic waves radiated outwards by the ICR antenna 11 are reflected back.
Further, the pulsed electromagnetic control unit 14 is also used to vary the confinement of the plasma in the ceramic discharge chamber 16 by adjusting the current.
In a second aspect of the present invention, there is provided a method of generating high density plasma, comprising the steps of:
s1, distributing working medium gas through a flow controller 2, then enabling the working medium gas to enter an MPDA module 5 through a pipeline 3 for preliminary ionization, and enabling the obtained low-density plasma to enter a ceramic discharge cavity 16;
S2, under the constraint of a magnetic mirror array magnetic field, the seed electrons in the ceramic discharge cavity 16 continuously ionize the low-density plasma to improve the plasma ionization rate;
S3, the ICR power source 8 transmits electromagnetic energy to plasma in the ceramic discharge cavity 16 through the ICR antenna 11, cooling water 9 is used for cooling the ICR antenna 11 in the transmission process, so that power loss is reduced, and high-density high-energy plasma is formed under the action of magnetic field energy and input power;
S4, the pulse electromagnetic control unit 14 controls the inclination angle, the pulse duty ratio and the current of a coil formed by the pulse electromagnetic valve antenna 12 and the magnetic core 13 to change the direction and the size of an induced magnetic field by controlling a power supply, and adjusts the ion speed direction and the size of the high-density high-energy plasma;
S5, inducing an angular orientation current to generate a Hall electric field which is crossed and perpendicular to the axial direction of the ceramic discharge cavity 16 by the induced magnetic field near the wall surface of the ceramic discharge cavity 16, so that ions of the high-density high-energy plasma are accelerated, the ion aggregation density of the high-density high-energy plasma is increased in the Hall electric field direction, and the ions of the high-density high-energy plasma are further accelerated in the radial direction by the directional electric field generated by the high-density region and the low-density region;
S6, the high-density high-energy plasma breaks through the constraint of the magnetic mirror array, converges towards the plasma leading-out end of the ceramic discharge cavity 16, and the magnetic spray pipe 15 fixedly connected with the plasma leading-out end converts the axial velocity component of ions of the high-density high-energy plasma into radial direction, indirectly accelerates the ions of the high-density high-energy plasma, improves the energy of the generated ions and accelerates and sprays the high-density high-energy plasma.
Compared with the prior art, the invention has the following beneficial effects:
1. The invention discloses a high-density plasma source with controllable ion velocity vector, which uses a pulse electromagnetic control device formed by a wire wound on a magnetic core and a control power supply, can gather ions and accelerate the ions directionally, and improves the ion velocity. Meanwhile, the direction and the size of the induced magnetic field are changed by controlling the inclination angle, the pulse duty ratio and the current of the coil, so that the direction and the size of the ion speed are adjusted.
2. The invention discloses an ion velocity vector controllable high-density plasma source, which uses a wire wound antenna, and an ICR power source can couple energy into plasma through the antenna to realize a high-power working mode.
3. The invention discloses a high-density plasma source with controllable ion velocity vector, which uses two MPDA as a first-stage plasma generating device, has the characteristics of high electron energy, high ionization rate, strong controllability and the like for generating plasma, and is a mode for generating the plasma by the device.
4. The invention discloses an ion velocity vector controllable high-density plasma source, which uses a magnetic mirror controlled by an electromagnetic coil to restrict plasma and generate high-density and high-ionization-rate plasma. The ion ejection speed is improved by further acceleration of the magnetic nozzle.
Drawings
In order to more clearly illustrate the technical solutions of the present invention, the following description will briefly explain the drawings used in the embodiments or the description of the prior art, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of an ion velocity vector controlled high density plasma source provided by the present invention;
Fig. 2 is a flow chart of a method for generating high-density plasma with controllable ion velocity vector.
The meaning of each symbol in the drawings is as follows:
1-working medium storage tank, 2-flow controller, 3-pipeline, 4-MPDA power supply, 5-MPDA, 6-magnetic mirror power supply, 7-electromagnetic coil, 8-ICR power supply, 9-cooling water, 11-Faraday shielding layer, 11-ICR antenna, 12-pulse electromagnetic valve antenna, 13-magnetic core, 14-pulse electromagnetic unit control power supply, 15-magnetic spray pipe and 16-ceramic discharge cavity;
Detailed Description
In the following description, for purposes of explanation and not limitation, specific details are set forth such as the particular system architecture, techniques, etc., in order to provide a thorough understanding of the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced in other embodiments that depart from these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.
An ion velocity vector-controllable high-density plasma source according to the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a schematic view of an ion velocity vector controlled high density plasma source according to the present invention.
As shown in fig. 1, the high density plasma source includes:
Two MPDA modules 5, two magnetic mirror power supplies 6, two electromagnetic coils 7, two ICR antennas 11, two ICR power sources 8, two pipelines 3, a pulse electromagnetic valve antenna 12, a pulse electromagnetic control unit 14, a magnetic spray pipe 15 and a ceramic discharge cavity 16,
The MPDA module 5 is positioned at two sides of the ceramic discharge cavity 16 and comprises an MPDA power supply and an MPDA, and is used for enabling working medium gas in the working medium storage tank 1 to enter the flow controller 2 through a pipeline, then enter the MPDA module 5 through the pipeline 3, enabling neutral working medium gas to be primarily ionized, and enabling generated seed electrons and low-density plasma to enter the ceramic discharge cavity; the seed electrons include high energy electrons.
Wherein the low density plasma is a plasma in the range of 1×10 13-1×1015/cm3.
The high-energy electrons generated by the MPDA are used as seed electrons, the low-density plasma is continuously ionized under the constraint of the magnetic mirror, the ionization rate of the plasma can be improved, the ions are filled with energy through the ICR antenna, and the requirement of a high-power working mode can be met.
The ICR antenna 11 and the ICR power source 8 form an ICR discharge module, and the ICR discharge module is used for injecting energy into the low-density plasma to obtain high-density high-energy plasma;
The ICR discharge module is of an electrodeless structure so as to reduce corrosion to electrodes and realize a high-power working mode.
The ceramic discharge chamber 16 has a cylindrical structure with openings at both ends and a center, and mainly has two parts, namely a plasma inlet end at both sides and a plasma outlet end at the center. The plasma inlet ends at two sides are respectively fixed with an MPDA device, and are connected with an MPDA power supply 4, a flow controller 2, a pipeline 3 and a working medium storage tank 1, wherein the flow controller can adjust the flow of working medium, so that the plasma source can be adjusted.
The magnetic mirror arrays formed by electromagnetic coils are fixed on two sides of the ceramic discharge cavity 16, plasma can be restrained under a set energy threshold value by adjusting the power supply of the magnetic mirror array, higher energy is obtained under multiple energy injection, and the ionization rate of the plasma is improved.
The pulse electromagnetic control unit 14 is wound on a magnetic core by the 5-turn pulse electromagnetic valve antenna 12 and is used for obtaining a magnetic field generated by alternating current by introducing high-frequency variable current, changing the direction and the size of an induced magnetic field by controlling the inclination angle of a coil, the pulse duty ratio and the size of the current, adjusting the ion speed direction and the size of high-density plasma, and accelerating and leading out the high-density high-energy plasma after focusing by the magnetic field generated by the alternating current;
The induced magnetic field induces an angular orientation current near the wall of the discharge chamber to generate a crossed Hall electric field, the Hall electric field perpendicular to the axial direction of the ceramic discharge chamber accelerates ions, the ion aggregation density is increased in the direction, and the ions are further accelerated in the radial direction by the directional electric field generated by the high-density area and the low-density area. The high-energy plasma breaks through the constraint of the magnetic mirror and converges towards the plasma leading-out end of the ceramic discharge cavity. The magnetic spray pipe with the fixed plasma outlet end can restrict the plasma, convert the axial velocity component of the ions to radial direction, indirectly accelerate the ions and improve the ion energy generated by the device.
The pulsed electromagnetic control unit 14 is also used to vary the confinement of the plasma in the ceramic discharge chamber 16 by adjusting the current.
The pulse electromagnetic control unit 14 changes the restriction of the plasma in the ceramic discharge cavity 16 by adjusting the current, so as to adjust the quantity and the speed of ions, and realize the controllable speed of the ions generated by the plasma source.
The ICR antenna 11 is positioned close to the magnetic mirror array, and cooling water is introduced into the ICR antenna to achieve the purpose of reducing the working temperature of the antenna;
The magnetic mirror array is to restrain low-density plasma under a set energy threshold value by adjusting a magnetic mirror power supply 6, and obtain high-density plasma through multiple energy injections.
The ICR power source 8 is used for feeding power into the ceramic discharge cavity 16 through the ICR antenna 11 to heat ions in the plasma and improve the density and ion energy of the low-density plasma.
Since the ICR power source 8 is coupled with the plasma energy through the ICR antenna 11, there is a partial power loss on the antenna, resulting in an increase in the temperature of the antenna and a decrease in the power transmission capability, it is necessary to cool the antenna with cooling water.
The outer surface of the ICR antenna 11 is wrapped with a Faraday shielding layer with a set thickness, for example, a soft iron metal layer is used for insulation between the Faraday shielding layer and the ICR antenna 11, and electromagnetic waves radiated outwards by the ICR antenna 11 are reflected back.
Based on the same conception, the invention also provides a high-density plasma generation method with controllable ion velocity vector, which comprises the following steps:
s1, distributing working medium gas through a flow controller, then enabling the working medium gas to enter an MPDA module 5 through a pipeline 3 for preliminary ionization, and enabling obtained low-density plasma to enter a ceramic discharge cavity 16 through an inlet end of the ceramic discharge cavity 16;
s2, under the constraint of a magnetic mirror array magnetic field, seed electrons in the ceramic discharge cavity 16 ionize low-density plasma continuously to improve the plasma ionization rate;
S3, the ICR power source 8 transmits electromagnetic energy to plasma in the ceramic discharge cavity 16 through the ICR antenna 11, cooling water is used for cooling the ICR antenna 11 in the transmission process, so that power loss is reduced, and high-density high-energy plasma is formed under the effects of magnetic field energy and input power;
S4, the pulse electromagnetic control unit 14 changes the direction and the size of an induced magnetic field by controlling the adjustment of a power supply and controlling the inclination angle, the pulse duty ratio and the current size of a coil, and adjusts the ion speed direction and the size of high-density high-energy plasma;
S5, inducing an induced magnetic field to generate angular orientation current on the wall surface close to the ceramic discharge cavity, generating a cross Hall electric field perpendicular to the axial direction of the ceramic discharge cavity to accelerate ions of the high-density high-energy plasma, so that the ion aggregation density of the high-density high-energy plasma is increased in the Hall electric field direction, and the ions of the high-density high-energy plasma are further accelerated in the radial direction by the directional electric field generated by the high-density region and the low-density region;
S6, the high-density high-energy plasma breaks through the constraint of the magnetic mirror array, converges towards the plasma outlet end of the ceramic discharge cavity 16, the magnetic spray pipe fixed at the plasma outlet end converts the axial velocity component of ions of the high-density high-energy plasma into radial direction, indirectly accelerates the ions of the high-density high-energy plasma, improves the energy of the generated ions, and accelerates and sprays the high-density high-energy plasma at the magnetic spray pipe 15 of the plasma outlet end.
A magnetic spray pipe 15 structure formed by samarium cobalt permanent magnets is fixed at the plasma leading-out end, and the magnetic spray pipe has acceleration and focusing effects on plasma in the leading-out process.
Any combination of the above optional solutions may be adopted to form an optional embodiment of the present application, which is not described herein.
It should be understood that the sequence number of each step in the foregoing embodiment does not mean that the execution sequence of each process should be determined by the function and the internal logic, and should not limit the implementation process of the embodiment of the present invention.
The above embodiments are only for illustrating the technical solution of the present invention, and are not limiting; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (8)
1. An ion velocity vector controllable high density plasma source comprising two sets of: the device comprises an MPDA module (5), a magnetic mirror power supply (6), an electromagnetic coil (7), an ICR antenna (11), an ICR power source (8), a working medium storage tank (1), a flow controller (2) and a pipeline (3), and further comprises a pulse electromagnetic valve antenna (12), a pulse electromagnetic control unit (14), a magnetic spray pipe (15) and a ceramic discharge cavity (16), wherein the two sets of devices are symmetrically arranged on two sides of the ceramic discharge cavity (16);
The MPDA module (5) comprises an MPDA power supply (4) and a magnetic plasma arc plasma source (MPDA), working medium gas in the working medium storage tank (1) enters the flow controller (2) through a pipeline (3), then enters the MPDA module (5) through the pipeline (3), the working medium gas is primarily ionized, and generated seed electrons and low-density plasma enter the ceramic discharge cavity (16);
The electromagnetic coil (7) is positioned at the outer side of the ceramic discharge cavity (16), the magnetic mirror power supply (6) and the electromagnetic coil (7) form a magnetic mirror array, the low-density plasma is restrained and gathered under the control of the electromagnetic coil (7), the seed electrons continuously ionize the low-density plasma, and the ionization rate of the plasma is improved;
The ICR antenna (11) is wound on the outer side of the ceramic discharge cavity (16), the ICR antenna (11) and the ICR power source (8) form an ICR discharge module, and the ICR discharge module is used for injecting energy into the low-density plasma to obtain high-density high-energy plasma;
The pulse electromagnetic valve antenna (12) is wound on a magnetic core (13) to form a coil and is connected with the pulse electromagnetic control unit (14), a magnetic field generated by alternating current is obtained by introducing high-frequency-changing current into the pulse electromagnetic valve antenna (12), the direction and the size of an induced magnetic field are changed by controlling the inclination angle of the coil, the pulse duty ratio and the size of the current, the ion speed direction and the size of the high-density high-energy plasma are regulated, and the high-density high-energy plasma is accelerated and led out after being focused by the magnetic field generated by the alternating current;
The magnetic spray pipe (15) forms an electromagnetic accelerating structure and is used for further accelerating the high-density high-energy plasma, so that the high-density high-energy plasma is accelerated and sprayed out of a plasma leading-out end of the ceramic discharge cavity (16).
2. The high density plasma source of claim 1 wherein the seed electrons comprise high energy electrons.
3. The high density plasma source of claim 1, wherein the ICR discharge module is of an electrodeless configuration to reduce erosion of electrodes to achieve a high power mode of operation.
4. The high-density plasma source of claim 1, wherein the magnetic mirror array is configured to obtain the high-density plasma through multiple energy injections by adjusting a magnetic mirror power supply (6) to restrict the low-density plasma to a set energy threshold.
5. The high-density plasma source of claim 1, wherein the plasma source comprises a plasma source,
The ICR antenna (11) is positioned close to the magnetic mirror array, and cooling water (9) is introduced into the ICR antenna to achieve the purpose of reducing the working temperature of the antenna;
The ICR power source (8) is used for feeding power into the ceramic discharge cavity (16) through the ICR antenna (11), heating ions in plasma and improving the density and ion energy of the low-density plasma.
6. The high-density plasma source of claim 1, wherein the outer surface of the ICR antenna (11) is wrapped with a Faraday shield (10) of a set thickness and insulated from the ICR antenna (11) to reflect electromagnetic waves radiated outward from the ICR antenna (11) back.
7. The high density plasma source according to claim 1, characterized in that the pulsed electromagnetic control unit (14) is further adapted to vary the confinement of the plasma in the ceramic discharge chamber (16) by adjusting the current.
8. A high-density plasma generating method using the high-density plasma source according to any one of claims 1 to 7, characterized by comprising the steps of:
s1, distributing working medium gas through a flow controller (2), then enabling the working medium gas to enter an MPDA module (5) through a pipeline (3) for preliminary ionization, and enabling obtained low-density plasma to enter the ceramic discharge cavity (16);
S2, under the constraint of a magnetic mirror array magnetic field, the seed electrons in the ceramic discharge cavity (16) ionize the low-density plasma continuously to improve the plasma ionization rate;
s3, the ICR power source (8) transmits electromagnetic energy to plasma in the ceramic discharge cavity (16) through the ICR antenna (11), cooling water (9) is used for cooling the ICR antenna (11) in the transmission process, so that power loss is reduced, and high-density high-energy plasma is formed under the action of magnetic field energy and input power;
S4, the pulse electromagnetic control unit (14) controls the inclination angle, the pulse duty ratio and the current of a coil formed by the pulse electromagnetic valve antenna (12) and the magnetic core (13) to change the direction and the size of an induced magnetic field by controlling a power supply, and adjusts the ion speed direction and the size of the high-density high-energy plasma;
s5, inducing an angular orientation current to generate a Hall electric field which is crossed and perpendicular to the axial direction of the ceramic discharge cavity (16) by the induced magnetic field, so that the ion aggregation density of the high-density high-energy plasma is increased in the Hall electric field direction, and the ions of the high-density high-energy plasma are further accelerated in the radial direction by the directional electric field generated by the high-density region and the low-density region;
S6, the high-density high-energy plasma breaks through the constraint of the magnetic mirror array, converges towards a plasma leading-out end of the ceramic discharge cavity (16), and a magnetic spray pipe (15) fixedly connected with the plasma leading-out end converts the axial velocity component of ions of the high-density high-energy plasma into radial directions, so that the ions of the high-density high-energy plasma are indirectly accelerated, the energy of the generated ions is improved, and the high-density high-energy plasma is accelerated and sprayed out.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210622397.2A CN114900938B (en) | 2022-06-01 | 2022-06-01 | Ion velocity vector controllable high-density plasma source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210622397.2A CN114900938B (en) | 2022-06-01 | 2022-06-01 | Ion velocity vector controllable high-density plasma source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114900938A CN114900938A (en) | 2022-08-12 |
| CN114900938B true CN114900938B (en) | 2024-07-16 |
Family
ID=82726629
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210622397.2A Active CN114900938B (en) | 2022-06-01 | 2022-06-01 | Ion velocity vector controllable high-density plasma source |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114900938B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591783A (en) * | 2016-11-23 | 2017-04-26 | 中国科学院合肥物质科学研究院 | Magnetic confinement vacuum ion film plating device |
| CN110545612A (en) * | 2019-09-04 | 2019-12-06 | 北京航空航天大学 | Multi-stage ionization rotating magnetic field acceleration helicon plasma source |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10966310B1 (en) * | 2020-04-03 | 2021-03-30 | Wisconsin Alumni Research Foundation | High-energy plasma generator using radio-frequency and neutral beam power |
| CN111526653B (en) * | 2020-06-03 | 2024-04-26 | 吉林大学 | Microwave coupling plasma generating device with electromagnetic energy dual excitation function |
| CN111755317B (en) * | 2020-06-30 | 2023-03-14 | 中国科学院近代物理研究所 | Radio frequency negative ion source for secondary ion mass spectrometer |
| CN114352494A (en) * | 2021-12-15 | 2022-04-15 | 西安航天动力研究所 | Plasma generation device and method based on multi-stage magnetic field and multi-stage spray pipe |
-
2022
- 2022-06-01 CN CN202210622397.2A patent/CN114900938B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106591783A (en) * | 2016-11-23 | 2017-04-26 | 中国科学院合肥物质科学研究院 | Magnetic confinement vacuum ion film plating device |
| CN110545612A (en) * | 2019-09-04 | 2019-12-06 | 北京航空航天大学 | Multi-stage ionization rotating magnetic field acceleration helicon plasma source |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114900938A (en) | 2022-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5277751A (en) | Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window | |
| US10395903B2 (en) | Self-sustained non-ambipolar direct current (DC) plasma at low power | |
| US7663319B2 (en) | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities | |
| US7294969B2 (en) | Two-stage hall effect plasma accelerator including plasma source driven by high-frequency discharge | |
| JP2015072909A (en) | Improved plasma source | |
| CN101835334B (en) | Method for controlling crossed field discharge resonant coupling | |
| EP1976346A1 (en) | Apparatus for generating a plasma | |
| JP2006505128A (en) | Plasma treatment magnetically enhanced by high power pulses | |
| KR20110094346A (en) | Plasma processing equipment and plasma generation equipment | |
| EP1803142A1 (en) | Apparatus for generating high-current electrical discharges | |
| JP2000150194A (en) | Electron beam stimulated plasma generator | |
| US7777178B2 (en) | Plasma generating apparatus and method using neutral beam | |
| KR20100084108A (en) | Processing device and generating device for plasma | |
| CN113764252B (en) | Plasma source and starting method thereof | |
| US20240212994A1 (en) | Methods and systems for increasing energy output in z-pinch plasma confinement system | |
| CN114900938B (en) | Ion velocity vector controllable high-density plasma source | |
| CN114828382B (en) | Mixed superconductive ECR ion source device | |
| CN216391496U (en) | Plasma generating device and ion source | |
| CN114258182B (en) | Cusp field ion source and ion beam generating method | |
| TWI803098B (en) | Ion source device | |
| CN113133174B (en) | Helicon wave-ion cyclotron resonance coupling discharge system | |
| CN108566717B (en) | Plasma generator excited by microwave vertical injection | |
| CN115263702B (en) | Device for regulating and controlling wave-particle energy of helicon wave plasma | |
| Skalyga et al. | Status of new developments in the field of high-current gasdynamic ECR ion sources at the IAP RAS | |
| EP4297061A1 (en) | Ion source apparatus with adjustable plasma density |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |