CN100562207C - The method that suppresses plasma unstable - Google Patents
The method that suppresses plasma unstable Download PDFInfo
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- CN100562207C CN100562207C CNB2006100254906A CN200610025490A CN100562207C CN 100562207 C CN100562207 C CN 100562207C CN B2006100254906 A CNB2006100254906 A CN B2006100254906A CN 200610025490 A CN200610025490 A CN 200610025490A CN 100562207 C CN100562207 C CN 100562207C
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Abstract
A kind of method that suppresses plasma unstable, may further comprise the steps: by in being supplied to the unstrpped gas that comprises the elecrtonegativity plasma gas of plasma producing apparatus, adding the electropositive plasma gas, make the plasma electron density that produces in the described plasma producing apparatus increase, wherein the addition of electropositive plasma gas makes the plasma stability of described generation.
Description
Technical field
The present invention relates to plasma auxiliary material manufacture field, be specifically related to the stable method of control high-density plasma in the auxiliary integrated circuit manufacturing field of plasma.
Background technology
For example be usually used in low-pressure high-density plasma (the high density plasma that semiconductor integrated circuit is made in plasma auxiliary material system of processing, HDP) there is the plasma unstable phenomenon in the system, the unstable variation takes place in the characterisitic parameter that described plasma unstable is meant plasma under some special operating conditions for example VELOCITY DISTRIBUTION etc. of plasma ion and electron density, plasma ion and electronics, thereby usually causes semiconductor integrated circuit manufacture process ionic medium body process window narrow and processing quality is out of control.
The design size of making along with the large-scale semiconductive integrated circuit (design rule) is more and more littler, on the technology for control, etching anisotropic, etch-rate, the deposition rate of trickleer live width, select the requirement of plasma damage or the like when more and more stricter, therefore, above-mentioned plasma unstable phenomenon is increasing to the influence of semiconductor ic manufacturing process, must prevent plasma unstable in radio frequency induction coupled plasma (ICP) system that particularly uses in the following manufacturing process of 90nm.
According to the plasma physics principle, above-mentioned plasma unstable phenomenon be it is generally acknowledged and appeared in the elecrtonegativity plasma.Herein, described elecrtonegativity plasma is defined as the plasma that anion density wherein is higher than electron density.The mechanism of described plasma unstable is thought seriously to dilute electron density because anion density is excessive, causes due to the rapid decline of rate of ionization.
This unsettled plasma cognition causes processing uniformity and reaction rate in the plasma semiconductor-assisted ic processing undesired, for example etch rate instability, full-wafer etching/deposition are inhomogeneous etc., the yield that this often causes high-density plasma thrashing and has a strong impact on semiconductor element.
In order to suppress the phenomenon of this disadvantageous plasma unstable, many control devices have been developed.Japanese patent application No.1134569 discloses and has a kind ofly suppressed the unsettled method of ICP system ionic medium body by RF (radio frequency) power being carried out sequential modulation (pulse modulation), the major defect of this method is to introduce new radio-frequency apparatus, causes manufacturing cost to increase.U.S. Patent application No.6,399,507 disclose and a kind ofly have been applied to the radio-frequency power levels of inductively-coupled plasma sources and the method that the operating pressure in the plasma process chamber is guaranteed the plasma stability in the semiconductor processing chambers by adjusting, the major defect of this method is to exist between radio-frequency power and the operating pressure and influences each other, for example low more then to suppress the required radio-frequency power of plasma unstable just high more for pressure, therefore must regulate simultaneously above the two satisfy the plasma stability condition, this will increase Operating Complexity greatly and improve manufacturing cost.
Summary of the invention
The inventor furthers investigate at above-mentioned plasma unstable phenomenon, a kind of method that suppresses plasma unstable has been proposed, this method not only can the efficient stable plasma, and has overcome that above-mentioned cost of the prior art rises and the shortcoming of complicated operation.
Term used herein limits as follows: term " elecrtonegativity plasma " is meant that anion density is greater than the plasma of electron density in the plasma; Term " electropositive plasma " is meant that electron density is greater than the plasma of anion density in the plasma; Term " elecrtonegativity plasma gas " is meant the anion that produces when the being ionized into plasma gas more than electronics; Term " electropositive plasma gas " is meant the electronics that produces when the being ionized into plasma gas more than anion.
The purpose of this invention is to provide a kind of method that suppresses plasma unstable, this method may further comprise the steps:
By in being supplied to the unstrpped gas that comprises the elecrtonegativity plasma gas of plasma producing apparatus, adding the electropositive plasma gas, make the electron density in the plasma that described plasma producing apparatus produces increase, wherein the addition of electropositive plasma gas makes the plasma stability of described generation.
Wherein, ionization takes place and produces the elecrtonegativity plasma in the described unstrpped gas that comprises the elecrtonegativity plasma gas in described plasma producing apparatus.
Described plasma producing apparatus comprises the low-pressure high-density plasma device, is preferably selected from radio frequency induction coupling plasma body device, microwave plasma device or Ecr plasma device.
In according to the preferred embodiments of the invention, described elecrtonegativity plasma gas is preferably selected from oxygen, nitrogen, fluorine, chlorine and composition thereof.
In according to the preferred embodiments of the invention, described electropositive plasma gas preferably includes inert substance, its reaction that does not participate in various PLASMA PROCESSING also not with substrate generation chemical reaction.
In according to the preferred embodiments of the invention, described electropositive plasma gas is preferably selected from helium, neon, argon, krypton, xenon and composition thereof.
In according to a preferred embodiment of the invention, the electropositive plasma gas that is added and the volume ratio of described elecrtonegativity plasma gas are 0.5%-20%.
In according to another preferred embodiment of the present invention, the electropositive plasma gas that is added and the volume ratio of described elecrtonegativity plasma gas are 1%-5%.
In according to the preferred embodiments of the invention, the operating pressure of described plasma producing apparatus is 5mTorr-100mTorr.
In according to the preferred embodiments of the invention, the radio-frequency power of described radio frequency induction coupling plasma body device is 100-1000W.
Can be used for the purposes of PLASMA PROCESSING according to the method for inhibition plasma unstable of the present invention, wherein said PLASMA PROCESSING comprises plasma etch process and plasma-deposited process.
The invention has the advantages that providing a kind of very effectively and extremely makes things convenient for and the easy method that suppresses plasma unstable, this method can be implemented under quite wide processing conditions and need not to increase equipment cost, does not influence original course of processing simultaneously.
Embodiment
Hereinafter, will describe the preferred embodiments of the invention in detail.
Be not bound by any theory, the inventor thinks that the unsettled main cause of course of processing ionic medium body is that anion density is excessive in the plasma, and this often appears in the elecrtonegativity plasma.Because positive and negative charge equates in the plasma, so anion density is excessive just causes the electron density in the plasma diluted, thereby can't keep plasma stability.
According to above-mentioned cognition, the key that the inventor finds to suppress the plasma unstable phenomenon in the plasma process is to increase electron density.Disclose the method for electron density in many increase plasmas in the prior art, for example regulated radio-frequency power, operating pressure and reaction chamber wall temperature etc., but the problem that said method all exists complicated operation and cost to rise.
According to the present invention, effective and the most easy method that suppresses plasma unstable is exactly by adding electropositive plasma gas in the raw material that contains the elecrtonegativity plasma gas that produces the elecrtonegativity plasma, thereby introduces more electropositive plasma in described elecrtonegativity plasma system.Because the electric neutrality of plasma itself therefore along with the introducing of electropositive plasma, will guarantee that electron density increases in the plasma system, and the stable of electron density is the stable assurance of PLASMA PROCESSING.
In order not influence the operation and the effect of existing PLASMA PROCESSING, a small amount of electropositive plasma gas that adds according to the present invention is preferably selected from inert gas, for example argon gas, helium, neon, krypton gas, xenon and composition thereof.The plasma that above-mentioned inert gas produces not can with substrate generation chemical reaction, do not participate in simultaneously the various reactions of PLASMA PROCESSING yet, thereby guarantee to need not to change existing PLASMA PROCESSING, also can not influence the effect of existing PLASMA PROCESSING.
Preferably, the method according to this invention is applicable to the low-pressure high-density plasma device, is preferred for radio frequency induction coupling plasma body device, microwave plasma device or electron cyclotron resonace (ECR) plasma device.
In a preferred embodiment of the invention, the applicable elements of the method according to this invention is very extensive, and wherein the radio-frequency power scope can be 100-1000 watt (W), and working pressure range can be 5-100 millitorr (mTorr).Above condition has contained the condition of work of conventional low high-density plasma device substantially, thereby the applicability of the method according to this invention is very good.
In a preferred embodiment of the invention, the electropositive plasma gas that is added is 0.5-20% with the volume ratio of the elecrtonegativity plasma gas that is added, preferred 0.8-10%, more preferably 1-5%.If the addition of electropositive plasma gas is less than 0.5% of elecrtonegativity plasma gas volume, then can not effectively increases the electron density in the system, thereby can not suppress the instability of described plasma.If the addition of electropositive plasma gas greater than 20% of elecrtonegativity plasma gas volume, then can have a strong impact on the effect of described PLASMA PROCESSING.
Below further specify the present invention by specific embodiment and comparative example.
Embodiment
Embodiment 1
In the processing of radio frequency induction coupled plasma etching, the condition of work of the plasma device of employing is as follows:
Radio-frequency power 300W
Operating pressure 5-20mTorr
N
2Flow 100 standard ml/min (SCCM)
Ar flow 3SCCM.
The comparative example 1
Use with embodiment 1 in identical radio frequency induction coupling plasma body device, condition of work is as follows:
Radio-frequency power 300W
Operating pressure 5-20mTorr
N
2Flow 100SCCM.
In embodiment 1 and comparative example 1, reduce operating pressure gradually, by the plasmoid among Langmuir (Langmuir) probe measurement the foregoing description 1 and the comparative example 1, judge over time according to electron density and ionic current whether plasma is in stable state simultaneously.
The result shows that in comparative example 1, when gradually turning down to the 10mTorr left and right sides from 20mTorr operating pressure, this plasma takes place unstable, and electron density sharply descends.And in embodiment 1, equally operating pressure is turned down gradually from 20mTorr, to find to arrive 5mTorr until operating pressure, the plasma in the system still keeps stable, and unstable the variation do not take place in each characterisitic parameter.
Embodiment 2
Use with embodiment 1 in identical radio frequency induction coupling plasma body device, condition of work is as follows:
Radio-frequency power 100-1000W
Operating pressure 20mTorr
O
2Flow 100SCCM
Ar flow 5SCCM.
The comparative example 2
Use with embodiment 1 in identical radio frequency induction coupling plasma body device, condition of work is as follows:
Radio-frequency power 100-1000W
Operating pressure 20mTorr
O
2Flow 100SCCM.
In embodiment 2 and comparative example 2, reduce used radio-frequency power gradually, by the plasmoid among Langmuir probe measurement embodiment 2 and the comparative example 2, judge over time according to electron density and ionic current whether plasma is in stable state simultaneously.
The result shows, in comparative example 2, when with radio-frequency power when 1000W drops to about 200W, instability takes place in this plasma, electron density sharply descends.And in embodiment 2, equally radio-frequency power is turned down to 100W gradually from 1000W, during plasma in the system still keep stable, the unstable variation do not take place in each characterisitic parameter.
The present invention is not limited to above-mentioned embodiment, the scope that these embodiments do not limit the present invention in any way.Any change that those skilled in the art have done within the scope of the claims and adjust also should be thought and belongs to scope of the present invention.
Claims (9)
1. a method that suppresses plasma unstable is characterized in that, said method comprising the steps of:
By add the electropositive plasma gas in being supplied to the unstrpped gas that comprises the elecrtonegativity plasma gas of plasma producing apparatus, the plasma electron density that makes described plasma producing apparatus produce increases; Wherein, described plasma producing apparatus is the low-pressure high-density plasma device; Described elecrtonegativity plasma is the plasma of anion density greater than electron density; The described unstrpped gas that comprises the elecrtonegativity plasma gas produces electronegative plasma gas for ionization takes place in described plasma producing apparatus; Described electropositive plasma gas is the electronics that produces when the being ionized into plasma gas more than anion; The electropositive plasma gas of described adding and the volume ratio of described elecrtonegativity plasma gas are 0.5%-20%, make the plasma gas of described generation stable.
2. the process of claim 1 wherein that described plasma producing apparatus is selected from radio frequency induction coupling plasma body device, microwave plasma device or Ecr plasma device.
3. the method for claim 2, the radio-frequency power of wherein said radio frequency induction coupling plasma body device is 100-1000W.
4. the process of claim 1 wherein that described elecrtonegativity plasma gas is selected from oxygen, nitrogen, fluorine, chlorine and composition thereof.
5. the process of claim 1 wherein that described electropositive plasma gas comprises inert substance, its reaction that does not participate in various PLASMA PROCESSING also not with substrate generation chemical reaction.
6. the process of claim 1 wherein that described electropositive plasma gas is selected from helium, neon, argon, krypton, xenon and composition thereof.
7. the process of claim 1 wherein that the electropositive plasma gas that added and the volume ratio of described elecrtonegativity plasma species are 1%-5%.
8. the process of claim 1 wherein that the operating pressure of described plasma producing apparatus is 5mTorr-100mTorr.
9. the method for claim 1, described method is used for suppressing plasma unstable in PLASMA PROCESSING, and wherein said PLASMA PROCESSING comprises plasma etch process and plasma-deposited process.
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| CNB2006100254906A CN100562207C (en) | 2006-04-06 | 2006-04-06 | The method that suppresses plasma unstable |
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| CNB2006100254906A CN100562207C (en) | 2006-04-06 | 2006-04-06 | The method that suppresses plasma unstable |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111230 |
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Effective date of registration: 20111230 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |