CN101510768A - 膜体声波谐振器、滤波器、通信模块和通信设备 - Google Patents
膜体声波谐振器、滤波器、通信模块和通信设备 Download PDFInfo
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- CN101510768A CN101510768A CNA2009100030114A CN200910003011A CN101510768A CN 101510768 A CN101510768 A CN 101510768A CN A2009100030114 A CNA2009100030114 A CN A2009100030114A CN 200910003011 A CN200910003011 A CN 200910003011A CN 101510768 A CN101510768 A CN 101510768A
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- 238000004891 communication Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 239000012528 membrane Substances 0.000 claims description 85
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 22
- 229910017083 AlN Inorganic materials 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 7
- 239000010948 rhodium Substances 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052707 ruthenium Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 3
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- 229910004298 SiO 2 Inorganic materials 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0566—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers
- H03H9/0571—Constructional combinations of supports or holders with electromechanical or other electronic elements for duplexers including bulk acoustic wave [BAW] devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/703—Networks using bulk acoustic wave devices
- H03H9/706—Duplexers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
绝缘膜的材料 | 谐振因子Q | 抗谐振因子Q | 电机械耦合系数k2(%) |
SiO2 | 740 | 865 | 6.33 |
Si3N4 | 750 | 500 | 6.36 |
SiC | 750 | 500 | 6.36 |
Al2O3 | 750 | 490 | 6.36 |
AlN | 740 | 400 | 6.15 |
膜体声波谐振器的结构 | 谐振因子Q | 抗谐振因子Q | 电机械耦合系数k2(%) |
图4A中所示 | 740 | 396 | 6.16 |
图4B中所示 | 740 | 396 | 6.16 |
图4C中所示 | 715 | 337 | 6.21 |
图4D中所示 | 740 | 921 | 6.30 |
图4E中所示 | 740 | 729 | 6.21 |
Claims (17)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-034670 | 2008-02-15 | ||
JP2008034670A JP5279068B2 (ja) | 2008-02-15 | 2008-02-15 | 圧電薄膜共振子、フィルタ、通信モジュール、および通信装置 |
JP2008034670 | 2008-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101510768A true CN101510768A (zh) | 2009-08-19 |
CN101510768B CN101510768B (zh) | 2013-01-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN2009100030114A Expired - Fee Related CN101510768B (zh) | 2008-02-15 | 2009-01-08 | 膜体声波谐振器、滤波器、通信模块和通信设备 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7978025B2 (zh) |
JP (1) | JP5279068B2 (zh) |
CN (1) | CN101510768B (zh) |
Cited By (5)
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CN102695575A (zh) * | 2009-11-12 | 2012-09-26 | 萨基姆防务安全公司 | 焊接方法、陀螺仪和焊接部件 |
CN103444080A (zh) * | 2011-04-01 | 2013-12-11 | 瑞萨电子株式会社 | 半导体器件及其制造方法以及便携式电话机 |
CN107026632A (zh) * | 2015-12-25 | 2017-08-08 | 日本电波工业株式会社 | 压电振动片及压电装置 |
CN111279613A (zh) * | 2017-08-03 | 2020-06-12 | 阿库斯蒂斯有限公司 | 用于体声波谐振器的椭圆结构 |
CN111934640A (zh) * | 2020-06-28 | 2020-11-13 | 诺思(天津)微系统有限责任公司 | 设置插入层以提升功率的体声波谐振器、滤波器及电子设备 |
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US8248185B2 (en) * | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
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US8692631B2 (en) * | 2009-10-12 | 2014-04-08 | Hao Zhang | Bulk acoustic wave resonator and method of fabricating same |
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-
2008
- 2008-02-15 JP JP2008034670A patent/JP5279068B2/ja active Active
-
2009
- 2009-01-08 US US12/350,598 patent/US7978025B2/en not_active Expired - Fee Related
- 2009-01-08 CN CN2009100030114A patent/CN101510768B/zh not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102695575A (zh) * | 2009-11-12 | 2012-09-26 | 萨基姆防务安全公司 | 焊接方法、陀螺仪和焊接部件 |
CN103444080A (zh) * | 2011-04-01 | 2013-12-11 | 瑞萨电子株式会社 | 半导体器件及其制造方法以及便携式电话机 |
CN103444080B (zh) * | 2011-04-01 | 2016-07-27 | 瑞萨电子株式会社 | 半导体器件及其制造方法以及便携式电话机 |
CN107026632A (zh) * | 2015-12-25 | 2017-08-08 | 日本电波工业株式会社 | 压电振动片及压电装置 |
CN111279613A (zh) * | 2017-08-03 | 2020-06-12 | 阿库斯蒂斯有限公司 | 用于体声波谐振器的椭圆结构 |
CN111934640A (zh) * | 2020-06-28 | 2020-11-13 | 诺思(天津)微系统有限责任公司 | 设置插入层以提升功率的体声波谐振器、滤波器及电子设备 |
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JP5279068B2 (ja) | 2013-09-04 |
US7978025B2 (en) | 2011-07-12 |
JP2009194714A (ja) | 2009-08-27 |
CN101510768B (zh) | 2013-01-09 |
US20100019864A1 (en) | 2010-01-28 |
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