CN101501797B - 具有结构化的烧结-活性表面的半成品以及它们的制造方法 - Google Patents

具有结构化的烧结-活性表面的半成品以及它们的制造方法 Download PDF

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Publication number
CN101501797B
CN101501797B CN2007800301401A CN200780030140A CN101501797B CN 101501797 B CN101501797 B CN 101501797B CN 2007800301401 A CN2007800301401 A CN 2007800301401A CN 200780030140 A CN200780030140 A CN 200780030140A CN 101501797 B CN101501797 B CN 101501797B
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CN
China
Prior art keywords
anode conductor
capacitance
oxidation
sintering
semi
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Expired - Fee Related
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CN2007800301401A
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English (en)
Chinese (zh)
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CN101501797A (zh
Inventor
M·斯坦佐
A·沙夫
H·哈斯
H·布鲁姆
T·朗格特普
C·施尼特
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Tantalum Niobium Obisheng Innovative Materials Co ltd
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HC Starck GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/052—Sintered electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electric Double-Layer Capacitors Or The Like (AREA)
CN2007800301401A 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法 Expired - Fee Related CN101501797B (zh)

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CN201210273715.5A CN102832048B (zh) 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006038502.0 2006-08-16
DE102006038502 2006-08-16
PCT/EP2007/058293 WO2008019992A1 (en) 2006-08-16 2007-08-10 Semifinished products with a structured sinter-active surface and a process for their production

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CN101501797B true CN101501797B (zh) 2012-12-26

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CN201210273715.5A Expired - Fee Related CN102832048B (zh) 2006-08-16 2007-08-10 具有结构化的烧结-活性表面的半成品以及它们的制造方法

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US (1) US8999500B2 (enExample)
EP (1) EP2054901B1 (enExample)
JP (1) JP5124578B2 (enExample)
KR (1) KR101451443B1 (enExample)
CN (2) CN101501797B (enExample)
AU (1) AU2007286284A1 (enExample)
BR (1) BRPI0715961A2 (enExample)
CA (1) CA2658690A1 (enExample)
DK (1) DK2054901T3 (enExample)
IL (1) IL195932A (enExample)
MX (1) MX2009001523A (enExample)
PT (1) PT2054901T (enExample)
RU (1) RU2439731C2 (enExample)
TW (1) TWI447767B (enExample)
WO (1) WO2008019992A1 (enExample)
ZA (1) ZA200900660B (enExample)

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JP2816216B2 (ja) 1990-01-31 1998-10-27 明治製菓株式会社 ポップコーン膨張菓子の製造法
EP2046839B2 (de) * 2006-07-19 2019-04-10 Basf Se Verfahren zur herstellung wasserabsorbierender polymerpartikel mit hoher permeabilität durch polymerisation von tropfen einer monomerlösung
JP5861702B2 (ja) * 2011-05-13 2016-02-16 旭硝子株式会社 導電性マイエナイト化合物の製造方法
US20150340159A1 (en) * 2012-06-22 2015-11-26 Showa Denko K.K. Anode body for capacitor
CN103147036B (zh) * 2012-12-20 2015-04-22 浙江易锋机械有限公司 汽车空调压缩机配件的局部渗碳方法
JP5750200B1 (ja) * 2013-12-20 2015-07-15 昭和電工株式会社 タングステン粉、コンデンサの陽極体、及び電解コンデンサ
WO2015093155A1 (ja) * 2013-12-20 2015-06-25 昭和電工株式会社 タングステン粉、コンデンサの陽極体、及び電解コンデンサ
JP6011593B2 (ja) * 2014-10-22 2016-10-19 三菱マテリアル株式会社 銅多孔質焼結体の製造方法及び銅多孔質複合部材の製造方法
JP6107888B2 (ja) 2015-06-12 2017-04-05 三菱マテリアル株式会社 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6065059B2 (ja) 2015-06-12 2017-01-25 三菱マテリアル株式会社 銅多孔質体、銅多孔質複合部材、銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6733286B2 (ja) * 2016-04-27 2020-07-29 三菱マテリアル株式会社 銅多孔質体の製造方法、及び、銅多孔質複合部材の製造方法
JP6249060B2 (ja) * 2016-07-29 2017-12-20 三菱マテリアル株式会社 銅多孔質複合部材
CN109952626B (zh) * 2016-11-14 2021-10-26 株式会社村田制作所 固体电解电容器元件、固体电解电容器以及固体电解电容器元件的制造方法
WO2020075733A1 (ja) * 2018-10-12 2020-04-16 東洋アルミニウム株式会社 アルミニウム電解コンデンサ用電極材の製造方法
US11289276B2 (en) * 2018-10-30 2022-03-29 Global Advanced Metals Japan K.K. Porous metal foil and capacitor anodes made therefrom and methods of making same
JP2022530103A (ja) * 2019-04-29 2022-06-27 グローバル アドバンスト メタルズ ユー．エス．エー．，インコーポレイティド Ｔｉ－Ｚｒ合金粉末及びそれを含有するアノード
CN110648849B (zh) * 2019-09-26 2021-12-14 宇启材料科技南通有限公司 一种阀金属多孔体涂层电极箔及制作方法和电解电容器
CN111872401B (zh) * 2020-07-30 2022-11-08 合肥工业大学 一种odsw/tzm合金的放电等离子扩散连接方法

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IL141321A (en) 1998-09-10 2005-05-17 H C Starck Gmbh Co Kg Paste for producing sintered refractory metal layers, notably earth acid metal electrolytic capacitors or anodes
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Publication number Publication date
US8999500B2 (en) 2015-04-07
WO2008019992A1 (en) 2008-02-21
TW200834622A (en) 2008-08-16
DK2054901T3 (da) 2020-01-20
PT2054901T (pt) 2020-01-16
RU2439731C2 (ru) 2012-01-10
CN102832048A (zh) 2012-12-19
CN102832048B (zh) 2016-04-13
BRPI0715961A2 (pt) 2013-08-06
EP2054901B1 (en) 2019-11-06
HK1177811A1 (zh) 2013-08-30
MX2009001523A (es) 2009-02-18
KR101451443B1 (ko) 2014-10-15
JP5124578B2 (ja) 2013-01-23
JP2010500771A (ja) 2010-01-07
KR20090040301A (ko) 2009-04-23
CN101501797A (zh) 2009-08-05
CA2658690A1 (en) 2008-02-21
IL195932A (en) 2014-02-27
ZA200900660B (en) 2010-04-28
AU2007286284A1 (en) 2008-02-21
US20100068510A1 (en) 2010-03-18
RU2009109161A (ru) 2010-09-27
TWI447767B (zh) 2014-08-01
IL195932A0 (en) 2009-09-01
EP2054901A1 (en) 2009-05-06

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Address after: Goslar, Germany

Patentee after: Tantalum niobium obisheng innovative materials Co.,Ltd.

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