CN101500989B - 四脒基金属(iv)化合物及其在气相沉积中的用途 - Google Patents

四脒基金属(iv)化合物及其在气相沉积中的用途 Download PDF

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CN101500989B
CN101500989B CN2007800298108A CN200780029810A CN101500989B CN 101500989 B CN101500989 B CN 101500989B CN 2007800298108 A CN2007800298108 A CN 2007800298108A CN 200780029810 A CN200780029810 A CN 200780029810A CN 101500989 B CN101500989 B CN 101500989B
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compound
hafnium
oxidation state
zirconium
metal
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CN101500989A (zh
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R·G·戈登
J-S·莱恩
H·李
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Harvard University
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Harvard University
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
    • C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
    • C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/405—Oxides of refractory metals or yttrium

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Formation Of Insulating Films (AREA)
CN2007800298108A 2006-06-28 2007-06-26 四脒基金属(iv)化合物及其在气相沉积中的用途 Active CN101500989B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US81720906P 2006-06-28 2006-06-28
US60/817,209 2006-06-28
US11/581,986 US7264486B2 (en) 2005-10-17 2006-10-17 Electrical connector
US11/581,986 2006-10-17
PCT/US2007/014768 WO2008002546A1 (en) 2006-06-28 2007-06-26 Metal(iv) tetra-amidinate compounds and their use in vapor deposition

Related Child Applications (1)

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CN2012104614215A Division CN102993050A (zh) 2006-06-28 2007-06-26 四脒基金属(iv)化合物及其在气相沉积中的用途

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CN101500989A CN101500989A (zh) 2009-08-05
CN101500989B true CN101500989B (zh) 2012-12-19

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CN2012104614215A Pending CN102993050A (zh) 2006-06-28 2007-06-26 四脒基金属(iv)化合物及其在气相沉积中的用途
CN2007800298108A Active CN101500989B (zh) 2006-06-28 2007-06-26 四脒基金属(iv)化合物及其在气相沉积中的用途

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EP (1) EP2032529B1 (enExample)
JP (2) JP5555872B2 (enExample)
KR (1) KR101467587B1 (enExample)
CN (2) CN102993050A (enExample)
WO (1) WO2008002546A1 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8288198B2 (en) 2006-05-12 2012-10-16 Advanced Technology Materials, Inc. Low temperature deposition of phase change memory materials
KR101467587B1 (ko) * 2006-06-28 2014-12-01 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도
EP2511280A1 (en) 2006-11-02 2012-10-17 Advanced Technology Materials, Inc. Germanium amidinate complexes useful for CVD/ALD of metal thin films
US7973189B2 (en) * 2007-04-09 2011-07-05 President And Fellows Of Harvard College Cobalt nitride layers for copper interconnects and methods for forming them
TWI398541B (zh) * 2007-06-05 2013-06-11 羅門哈斯電子材料有限公司 有機金屬化合物
TWI471449B (zh) 2007-09-17 2015-02-01 Air Liquide 用於ｇｓｔ膜沈積之碲前驅物
KR101458953B1 (ko) 2007-10-11 2014-11-07 삼성전자주식회사 Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
SG178736A1 (en) 2007-10-31 2012-03-29 Advanced Tech Materials Amorphous ge/te deposition process
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8802194B2 (en) 2008-05-29 2014-08-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Tellurium precursors for film deposition
WO2010055423A2 (en) 2008-05-29 2010-05-20 L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Tellurium precursors for film deposition
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US8236381B2 (en) 2008-08-08 2012-08-07 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Metal piperidinate and metal pyridinate precursors for thin film deposition
WO2010065874A2 (en) 2008-12-05 2010-06-10 Atmi High concentration nitrogen-containing germanium telluride based memory devices and processes of making
JP2013503849A (ja) 2009-09-02 2013-02-04 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質
SE1000070A1 (sv) 2010-01-26 2011-06-07 Formox Ab Katalysator för framställning av aldehyd
KR20120123126A (ko) 2010-02-03 2012-11-07 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법
KR101706809B1 (ko) 2010-03-26 2017-02-15 엔테그리스, 아이엔씨. 게르마늄 안티몬 텔루라이드 물질 및 이를 포함하는 장치
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
KR101847953B1 (ko) * 2010-08-27 2018-04-11 메르크 파텐트 게엠베하 몰리브덴(ｉｖ) 아미드 전구체 및 원자층 증착용으로서의 그것의 용도
CN102418084A (zh) * 2011-12-14 2012-04-18 无锡迈纳德微纳技术有限公司 一种源气隔离的固态源原子层沉积装置和方法
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
CN104307572B (zh) * 2014-10-16 2016-06-22 山西大学 一种脒基铝金属催化剂及其制备方法
KR102430540B1 (ko) 2015-05-27 2022-08-08 에이에스엠 아이피 홀딩 비.브이. 몰리브덴 또는 텅스텐 함유 박막의 ald용 전구체의 합성 및 사용
KR101581314B1 (ko) 2015-07-20 2015-12-31 (주)마이크로켐 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
US10358407B2 (en) 2016-10-12 2019-07-23 Asm Ip Holding B.V. Synthesis and use of precursors for vapor deposition of tungsten containing thin films
US10643838B2 (en) * 2017-06-20 2020-05-05 Applied Materials, Inc. In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD
CN108641073B (zh) * 2018-04-17 2020-09-29 山西大学 一种三核有机亚锡金属催化剂及其制备方法和应用
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
CN110128373B (zh) * 2019-06-12 2023-03-24 鸿翌科技有限公司 哌嗪基锡配合物及其制备方法、薄膜、太阳能电池
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드
TWI865725B (zh) 2020-02-10 2024-12-11 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 高深寬比孔內的氧化鉿之沉積
KR20220167299A (ko) * 2020-04-10 2022-12-20 가부시키가이샤 아데카 아미디네이트 화합물, 그 2 량체 화합물, 박막 형성용 원료 및 박막의 제조 방법
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積
WO2022196491A1 (ja) 2021-03-18 2022-09-22 株式会社Adeka スズ化合物、薄膜形成用原料、薄膜、薄膜の製造方法及びハロゲン化合物
KR102806563B1 (ko) * 2022-05-11 2025-05-16 한국화학연구원 신규한 유기주석 화합물 및 이를 이용한 박막의 제조방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1726303A (zh) * 2002-11-15 2006-01-25 哈佛学院院长等 使用脒基金属的原子层沉积

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5139825A (en) * 1989-11-30 1992-08-18 President And Fellows Of Harvard College Process for chemical vapor deposition of transition metal nitrides
US6255414B1 (en) * 1998-09-01 2001-07-03 E. I. Du Pont De Nemours And Company Polymerization of olefins
CN1675402A (zh) * 2002-07-12 2005-09-28 哈佛学院院长等 氮化钨的汽相沉积
US7396949B2 (en) * 2003-08-19 2008-07-08 Denk Michael K Class of volatile compounds for the deposition of thin films of metals and metal compounds
JP4639686B2 (ja) * 2004-07-27 2011-02-23 Ｊｓｒ株式会社 化学気相成長材料及び化学気相成長方法
KR101467587B1 (ko) * 2006-06-28 2014-12-01 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1726303A (zh) * 2002-11-15 2006-01-25 哈佛学院院长等 使用脒基金属的原子层沉积

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Renaud Fix, et al.Chemical Vapor Deposition of Titanium, Zirconium, and Hafnium Nitride Thin Films.《Chem. Mater.》.1991,第3卷(第6期),1138-1148. *

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JP2009542654A (ja) 2009-12-03
JP5555872B2 (ja) 2014-07-23
KR101467587B1 (ko) 2014-12-01
KR20090024803A (ko) 2009-03-09
EP2032529B1 (en) 2012-10-17
WO2008002546A1 (en) 2008-01-03
JP2013209375A (ja) 2013-10-10
CN101500989A (zh) 2009-08-05
CN102993050A (zh) 2013-03-27
EP2032529A1 (en) 2009-03-11

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