CN101459176B - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN101459176B
CN101459176B CN200810187029XA CN200810187029A CN101459176B CN 101459176 B CN101459176 B CN 101459176B CN 200810187029X A CN200810187029X A CN 200810187029XA CN 200810187029 A CN200810187029 A CN 200810187029A CN 101459176 B CN101459176 B CN 101459176B
Authority
CN
China
Prior art keywords
drain region
region
semiconductor device
esd protection
pass transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200810187029XA
Other languages
English (en)
Chinese (zh)
Other versions
CN101459176A (zh
Inventor
鹰巢博昭
山本祐广
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Publication of CN101459176A publication Critical patent/CN101459176A/zh
Application granted granted Critical
Publication of CN101459176B publication Critical patent/CN101459176B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN200810187029XA 2007-12-12 2008-12-12 半导体器件 Expired - Fee Related CN101459176B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007-320973 2007-12-12
JP2007320973 2007-12-12
JP2007320973A JP2009147001A (ja) 2007-12-12 2007-12-12 半導体装置

Publications (2)

Publication Number Publication Date
CN101459176A CN101459176A (zh) 2009-06-17
CN101459176B true CN101459176B (zh) 2013-01-23

Family

ID=40752066

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200810187029XA Expired - Fee Related CN101459176B (zh) 2007-12-12 2008-12-12 半导体器件

Country Status (4)

Country Link
US (1) US7898035B2 (enExample)
JP (1) JP2009147001A (enExample)
KR (1) KR101489003B1 (enExample)
CN (1) CN101459176B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
US8378422B2 (en) * 2009-02-06 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. Electrostatic discharge protection device comprising a plurality of highly doped areas within a well
JP2011071329A (ja) * 2009-09-25 2011-04-07 Seiko Instruments Inc 半導体装置
JP5546191B2 (ja) * 2009-09-25 2014-07-09 セイコーインスツル株式会社 半導体装置
US12396267B2 (en) * 2023-02-02 2025-08-19 Vanguard International Semiconductor Corporation Semiconductor device
CN116169128A (zh) * 2023-03-27 2023-05-26 上海泰矽微电子有限公司 一种静电保护装置和芯片

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910675A (en) * 1995-12-14 1999-06-08 Nec Corporation Semiconductor device and method of making the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2642000B2 (ja) * 1991-05-21 1997-08-20 日本電気アイシーマイコンシステム株式会社 Ｍｏｓ集積回路装置
JP3203831B2 (ja) * 1992-10-23 2001-08-27 ソニー株式会社 静電破壊保護トランジスタ
JP2003289104A (ja) * 2002-03-28 2003-10-10 Ricoh Co Ltd 半導体装置の保護回路及び半導体装置
JP2005019452A (ja) * 2003-06-23 2005-01-20 Toshiba Corp 半導体装置
US6940131B2 (en) * 2003-06-30 2005-09-06 Texas Instruments Incorporated MOS ESD CDM clamp with integral substrate injection guardring and method for fabrication
JP4593094B2 (ja) * 2003-08-21 2010-12-08 日本電気株式会社 液晶表示装置及びその製造方法
US6943069B2 (en) * 2003-10-14 2005-09-13 Semiconductor Components Industries, L.L.C. Power system inhibit method and device and structure therefor
KR20050035687A (ko) * 2003-10-14 2005-04-19 삼성전자주식회사 정전기 방전 보호소자 및 그의 제조하는 방법
US20050224883A1 (en) * 2004-04-06 2005-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design for increasing charge device model immunity
US7397089B2 (en) * 2005-08-10 2008-07-08 Skyworks Solutions, Inc. ESD protection structure using contact-via chains as ballast resistors
JP5586819B2 (ja) * 2006-04-06 2014-09-10 ピーエスフォー ルクスコ エスエイアールエル 半導体装置
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910675A (en) * 1995-12-14 1999-06-08 Nec Corporation Semiconductor device and method of making the same

Also Published As

Publication number Publication date
CN101459176A (zh) 2009-06-17
KR20090063149A (ko) 2009-06-17
US7898035B2 (en) 2011-03-01
US20090152633A1 (en) 2009-06-18
JP2009147001A (ja) 2009-07-02
KR101489003B1 (ko) 2015-02-02

Similar Documents

Publication Publication Date Title
US11189611B2 (en) Electrostatic discharge protection semiconductor device
KR100731270B1 (ko) 테스트 가능한 정전기 방전 보호 회로
US10622348B2 (en) Protection device and method for fabricating the protection device
US8330254B2 (en) Semiconductor device
CN101221952B (zh) 用以保护一内部集成电路的半导体结构及其制造方法
KR910009355B1 (ko) Mos형 반도체장치의 입력보호회로
JPH11274404A (ja) 半導体装置
CN101373768A (zh) 半导体器件
JP5546191B2 (ja) 半導体装置
CN101459176A (zh) 半导体器件
CN105990334B (zh) 半导体装置及半导体装置的试验方法
KR20110081078A (ko) 반도체 장치
US8736022B2 (en) Semiconductor device with a diode-type ESD protection circuit
US9006831B2 (en) Semiconductor device
JP3792931B2 (ja) 半導体装置およびそのテスト方法
KR20210042246A (ko) 제너 다이오드를 사용하는 감지 igbt에 대한 정전기 방전 처리
CN204792800U (zh) 具有高效能的静电防护能力的功率晶体管
CN1324705C (zh) 可避免闩锁效应的集成电路
CN115084125A (zh) 静电保护电路及半导体器件
KR100638455B1 (ko) 고전압 소자용 ｅｓｄ 보호회로 및 이를 구비한 반도체 소자
CN113192952B (zh) 一种耐高压的esd保护器件、结构及制备方法
KR100861294B1 (ko) 반도체 회로용 정전기 보호소자
JP3214457B2 (ja) 半導体装置の製造方法
JP4006023B2 (ja) 集積回路
JP2011142189A (ja) 半導体装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C41 Transfer of patent application or patent right or utility model
TR01 Transfer of patent right

Effective date of registration: 20160323

Address after: Chiba County, Japan

Patentee after: SEIKO INSTR INC

Address before: Chiba, Chiba, Japan

Patentee before: Seiko Instruments Inc.

CP01 Change in the name or title of a patent holder

Address after: Chiba County, Japan

Patentee after: EPPs Lingke Co. Ltd.

Address before: Chiba County, Japan

Patentee before: SEIKO INSTR INC

CP01 Change in the name or title of a patent holder
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130123

Termination date: 20201212

CF01 Termination of patent right due to non-payment of annual fee