CN101450995B - 低介电常数的等离子聚合薄膜及其制造方法 - Google Patents

低介电常数的等离子聚合薄膜及其制造方法 Download PDF

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CN101450995B
CN101450995B CN2008101825701A CN200810182570A CN101450995B CN 101450995 B CN101450995 B CN 101450995B CN 2008101825701 A CN2008101825701 A CN 2008101825701A CN 200810182570 A CN200810182570 A CN 200810182570A CN 101450995 B CN101450995 B CN 101450995B
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thin film
plasma
film
substrate
plasma polymerized
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CN101450995A (zh
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郑东根
李晟宇
禹知亨
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Sungkyunkwan University Foundation for Corporate Collaboration
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/62—Plasma-deposition of organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C08J5/2206—Films, membranes or diaphragms based on organic and/or inorganic macromolecular compounds
    • C08J5/2218—Synthetic macromolecular compounds
    • C08J5/2256—Synthetic macromolecular compounds based on macromolecular compounds obtained by reactions other than those involving carbon-to-carbon bonds, e.g. obtained by polycondensation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C08J5/2287—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/01—Hydrocarbons
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/54—Silicon-containing compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
    • B05D3/0254—After-treatment
CN2008101825701A 2007-12-06 2008-12-05 低介电常数的等离子聚合薄膜及其制造方法 Active CN101450995B (zh)

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KR1020070126331 2007-12-06
KR10-2007-0126331 2007-12-06
KR1020070126331A KR100962044B1 (ko) 2007-12-06 2007-12-06 저유전 플라즈마 중합체 박막 및 그 제조 방법

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CN101450995A CN101450995A (zh) 2009-06-10
CN101450995B true CN101450995B (zh) 2012-05-09

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US (1) US7897521B2 (US07897521-20110301-C00006.png)
EP (1) EP2070601B1 (US07897521-20110301-C00006.png)
KR (1) KR100962044B1 (US07897521-20110301-C00006.png)
CN (1) CN101450995B (US07897521-20110301-C00006.png)
AT (1) ATE555859T1 (US07897521-20110301-C00006.png)

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WO2013025768A1 (en) 2011-08-15 2013-02-21 The Procter & Gamble Company Cosmetic applicators
US9371430B2 (en) 2013-08-19 2016-06-21 Research & Business Foundation Sungkyunkwan University Porous film with high hardness and a low dielectric constant and preparation method thereof
CN104356390A (zh) * 2014-11-07 2015-02-18 中国科学院上海有机化学研究所 含苯并环丁烯基团的有机硅氧烷及其制备和应用
US10351729B2 (en) * 2016-03-03 2019-07-16 Motorola Mobility Llc Polysiloxane films and methods of making polysiloxane films
CN108933088B (zh) * 2017-05-25 2020-05-29 上海稷以科技有限公司 一种封装的方法及封装结构
KR102578827B1 (ko) 2018-04-24 2023-09-15 삼성전자주식회사 유연한 유무기 보호막 및 그 제조방법
KR102138102B1 (ko) * 2018-09-05 2020-07-27 성균관대학교산학협력단 저유전 플라즈마 중합체 박막 및 이의 제조 방법

Citations (1)

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CN101435073A (zh) * 2007-04-23 2009-05-20 韩商奥拓股份有限公司 使用十字型烃类化合物形成无定形碳层和形成低k值介电层的方法

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Also Published As

Publication number Publication date
EP2070601B1 (en) 2012-05-02
ATE555859T1 (de) 2012-05-15
US7897521B2 (en) 2011-03-01
US20090054612A1 (en) 2009-02-26
CN101450995A (zh) 2009-06-10
EP2070601A2 (en) 2009-06-17
EP2070601A3 (en) 2010-02-24
KR100962044B1 (ko) 2010-06-08
KR20090059462A (ko) 2009-06-11

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