CN101437919A - 含铜基底的化学机械抛光方法 - Google Patents

含铜基底的化学机械抛光方法 Download PDF

Info

Publication number
CN101437919A
CN101437919A CNA2007800166556A CN200780016655A CN101437919A CN 101437919 A CN101437919 A CN 101437919A CN A2007800166556 A CNA2007800166556 A CN A2007800166556A CN 200780016655 A CN200780016655 A CN 200780016655A CN 101437919 A CN101437919 A CN 101437919A
Authority
CN
China
Prior art keywords
polishing composition
polishing
benzotriazole
oxidizing agent
copper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800166556A
Other languages
English (en)
Chinese (zh)
Inventor
张剑
菲利普·卡特
李守田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN101437919A publication Critical patent/CN101437919A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CNA2007800166556A 2006-04-21 2007-03-22 含铜基底的化学机械抛光方法 Pending CN101437919A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/408,334 US20070249167A1 (en) 2006-04-21 2006-04-21 CMP method for copper-containing substrates
US11/408,334 2006-04-21

Publications (1)

Publication Number Publication Date
CN101437919A true CN101437919A (zh) 2009-05-20

Family

ID=38620011

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800166556A Pending CN101437919A (zh) 2006-04-21 2007-03-22 含铜基底的化学机械抛光方法

Country Status (8)

Country Link
US (1) US20070249167A1 (https=)
EP (1) EP2013308A4 (https=)
JP (1) JP2009534834A (https=)
KR (1) KR20080111149A (https=)
CN (1) CN101437919A (https=)
IL (1) IL194462A0 (https=)
TW (1) TW200808946A (https=)
WO (1) WO2007126672A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102408834A (zh) * 2010-09-20 2012-04-11 安集微电子（上海）有限公司 一种化学机械抛光液
CN103265893A (zh) * 2013-06-04 2013-08-28 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
CN105378011A (zh) * 2013-07-11 2016-03-02 巴斯夫欧洲公司 包含苯并三唑衍生物作为缓蚀剂的化学机械抛光组合物
CN119331517A (zh) * 2024-12-11 2025-01-21 衡阳市美润达表面处理有限公司 一种铝钛复合材料用抛光液及其制备方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101451048A (zh) * 2007-11-30 2009-06-10 安集微电子（上海）有限公司 一种化学机械抛光液
JP5441362B2 (ja) * 2008-05-30 2014-03-12 富士フイルム株式会社 研磨液及び研磨方法
US8247326B2 (en) * 2008-07-10 2012-08-21 Cabot Microelectronics Corporation Method of polishing nickel-phosphorous
CN101724347A (zh) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 一种化学机械抛光液
WO2010052983A1 (ja) * 2008-11-10 2010-05-14 旭硝子株式会社 研磨用組成物および半導体集積回路装置の製造方法
JP2013077341A (ja) * 2011-09-29 2013-04-25 Alphana Technology Co Ltd 回転機器の製造方法およびその製造方法により製造される回転機器
US8999193B2 (en) * 2012-05-10 2015-04-07 Air Products And Chemicals, Inc. Chemical mechanical polishing composition having chemical additives and methods for using same
US20200102475A1 (en) * 2018-09-28 2020-04-02 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mecahnical polishing composition and method of polishing silcon dioxide over silicon nitiride

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230833A (en) * 1989-06-09 1993-07-27 Nalco Chemical Company Low sodium, low metals silica polishing slurries
US5196353A (en) * 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) * 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) * 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) * 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) * 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5838447A (en) * 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US6326293B1 (en) * 1997-12-19 2001-12-04 Texas Instruments Incorporated Formation of recessed polysilicon plugs using chemical-mechanical-polishing (CMP) and selective oxidation
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6217416B1 (en) * 1998-06-26 2001-04-17 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrates
SG99289A1 (en) * 1998-10-23 2003-10-27 Ibm Chemical-mechanical planarization of metallurgy
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6599836B1 (en) * 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
US6436302B1 (en) * 1999-08-23 2002-08-20 Applied Materials, Inc. Post CU CMP polishing for reduced defects
US6368955B1 (en) * 1999-11-22 2002-04-09 Lucent Technologies, Inc. Method of polishing semiconductor structures using a two-step chemical mechanical planarization with slurry particles having different particle bulk densities
JP3450247B2 (ja) * 1999-12-28 2003-09-22 Ｎｅｃエレクトロニクス株式会社 金属配線形成方法
TW572980B (en) * 2000-01-12 2004-01-21 Jsr Corp Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process
US6936541B2 (en) * 2000-09-20 2005-08-30 Rohn And Haas Electronic Materials Cmp Holdings, Inc. Method for planarizing metal interconnects
US6709316B1 (en) * 2000-10-27 2004-03-23 Applied Materials, Inc. Method and apparatus for two-step barrier layer polishing
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
US7012025B2 (en) * 2001-01-05 2006-03-14 Applied Materials Inc. Tantalum removal during chemical mechanical polishing
US20020104269A1 (en) * 2001-01-26 2002-08-08 Applied Materials, Inc. Photochemically enhanced chemical polish
US6638326B2 (en) * 2001-09-25 2003-10-28 Ekc Technology, Inc. Compositions for chemical mechanical planarization of tantalum and tantalum nitride
US7316603B2 (en) * 2002-01-22 2008-01-08 Cabot Microelectronics Corporation Compositions and methods for tantalum CMP
US6726535B2 (en) * 2002-04-25 2004-04-27 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing localized Cu corrosion during CMP
EP1517972A4 (en) * 2002-06-07 2009-12-16 Showa Denko Kk METAL POLISHING COMPOSITION, POLISHING METHOD USING THE COMPOSITION, AND METHOD FOR PRODUCING WELDING AFTER THE POLISHING METHOD
US7300603B2 (en) * 2003-08-05 2007-11-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical planarization compositions for reducing erosion in semiconductor wafers

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102408834A (zh) * 2010-09-20 2012-04-11 安集微电子（上海）有限公司 一种化学机械抛光液
CN102408834B (zh) * 2010-09-20 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
CN103265893A (zh) * 2013-06-04 2013-08-28 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
CN105378011A (zh) * 2013-07-11 2016-03-02 巴斯夫欧洲公司 包含苯并三唑衍生物作为缓蚀剂的化学机械抛光组合物
TWI656201B (zh) * 2013-07-11 2019-04-11 德商巴斯夫歐洲公司 包含苯并三唑衍生物作爲抗腐蝕劑之化學機械拋光組成物
CN119331517A (zh) * 2024-12-11 2025-01-21 衡阳市美润达表面处理有限公司 一种铝钛复合材料用抛光液及其制备方法
CN119331517B (zh) * 2024-12-11 2025-05-27 衡阳市美润达表面处理有限公司 一种铝钛复合材料用抛光液及其制备方法

Also Published As

Publication number Publication date
TW200808946A (en) 2008-02-16
EP2013308A1 (en) 2009-01-14
US20070249167A1 (en) 2007-10-25
IL194462A0 (en) 2009-08-03
JP2009534834A (ja) 2009-09-24
EP2013308A4 (en) 2011-12-14
WO2007126672A1 (en) 2007-11-08
KR20080111149A (ko) 2008-12-22

Similar Documents

Publication Publication Date Title
CN101437919A (zh) 含铜基底的化学机械抛光方法
CN1326199C (zh) 包括钨侵蚀抑制剂的抛光组合物
JP5327050B2 (ja) 金属用研磨液及び研磨方法
KR101099721B1 (ko) 모듈라 베리어 제거 연마 슬러리
JP6130380B2 (ja) アルミニウム半導体基材研摩用の組成物および研磨方法
JP4952584B2 (ja) 金属用研磨液及び被研磨膜の研磨方法
KR101372208B1 (ko) 요오드산염을 함유하는 화학적-기계적 연마 조성물 및 방법
KR20070105301A (ko) 메탈레이트 개질된 실리카 입자를 함유하는 수성 슬러리
IL198373A (en) Chemical-mechanical polishing method of copper / ruthenium / tantalum bedding
JP6734854B2 (ja) コバルト及び／又はコバルト合金含有の基板の研磨のための化学機械研磨（ｃｍｐ）組成物の使用
JP2011508423A (ja) 金属除去速度を制御するためのハロゲン化物アニオン
WO2009064365A2 (en) Compositions and methods for ruthenium and tantalum barrier cmp
JP2008160112A (ja) 銅の化学機械平坦化用組成物
JP2005175218A (ja) 銅配線研磨用スラリー
JP2010258418A (ja) 化学機械研磨用水系分散体調製用キットおよび化学機械研磨用水系分散体の調製方法
KR101279970B1 (ko) 금속 배선 연마용 ｃｍｐ 슬러리 조성물
KR100772929B1 (ko) 구리 다마신 공정용 화학-기계적 연마 슬러리 조성물
JP2007013059A (ja) Ｃｍｐ用研磨組成物
JP5413567B2 (ja) 化学機械研磨用水系分散体およびその製造方法、ならびに化学機械研磨方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Open date: 20090520