CN101395732A - 磁阻效应元件的制造方法以及制造设备 - Google Patents

磁阻效应元件的制造方法以及制造设备 Download PDF

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Publication number
CN101395732A
CN101395732A CNA2007800072332A CN200780007233A CN101395732A CN 101395732 A CN101395732 A CN 101395732A CN A2007800072332 A CNA2007800072332 A CN A2007800072332A CN 200780007233 A CN200780007233 A CN 200780007233A CN 101395732 A CN101395732 A CN 101395732A
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China
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film
forming
layer
mgo
effect element
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English (en)
Chinese (zh)
Inventor
永峰佳纪
恒川孝二
D·D·贾亚普拉维拉
前原大树
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Canon Anelva Corp
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Canon Anelva Corp
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Priority to CN201210345416.8A priority Critical patent/CN102867910B/zh
Publication of CN101395732A publication Critical patent/CN101395732A/zh
Pending legal-status Critical Current

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  • Mram Or Spin Memory Techniques (AREA)
  • Measuring Magnetic Variables (AREA)
  • Physical Vapour Deposition (AREA)
CNA2007800072332A 2006-03-03 2007-02-26 磁阻效应元件的制造方法以及制造设备 Pending CN101395732A (zh)

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CN201210345416.8A CN102867910B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法

Applications Claiming Priority (3)

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JP058748/2006 2006-03-03
JP2006058748 2006-03-03
JP034686/2007 2007-02-15

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CN201210345416.8A Division CN102867910B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法
CN2009101467886A Division CN101615653B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法以及制造设备

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CN101395732A true CN101395732A (zh) 2009-03-25

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CN2009101467886A Active CN101615653B (zh) 2006-03-03 2007-02-26 磁阻效应元件的制造方法以及制造设备

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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105531838A (zh) * 2013-09-13 2016-04-27 美光科技公司 存储器单元、制作方法、半导体装置、存储器系统及电子系统
TWI620232B (zh) * 2013-10-30 2018-04-01 東京威力科創股份有限公司 Film forming device and film forming method
US10014466B2 (en) 2013-09-18 2018-07-03 Micron Technology, Inc. Semiconductor devices with magnetic and attracter materials and methods of fabrication
US10026889B2 (en) 2014-04-09 2018-07-17 Micron Technology, Inc. Semiconductor structures and devices and methods of forming semiconductor structures and magnetic memory cells
US10134978B2 (en) 2014-12-02 2018-11-20 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10347689B2 (en) 2014-10-16 2019-07-09 Micron Technology, Inc. Magnetic devices with magnetic and getter regions and methods of formation
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
CN110565059A (zh) * 2019-09-10 2019-12-13 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5513529B2 (ja) 2010-01-26 2014-06-04 キヤノンアネルバ株式会社 成膜方法、成膜装置、および該成膜装置の制御装置
JP5998654B2 (ja) 2012-05-31 2016-09-28 東京エレクトロン株式会社 真空処理装置、真空処理方法及び記憶媒体
WO2014024358A1 (ja) * 2012-08-10 2014-02-13 キヤノンアネルバ株式会社 トンネル磁気抵抗素子の製造装置

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JPH0314227A (ja) * 1989-06-13 1991-01-22 Sharp Corp 半導体装置の製造方法
JPH0397855A (ja) * 1989-09-07 1991-04-23 Shimadzu Corp スパッタリング装置
JPH0499271A (ja) * 1990-08-10 1992-03-31 Olympus Optical Co Ltd 多層薄膜の作製方法およびその装置
JP3021601B2 (ja) * 1990-10-22 2000-03-15 神島化学工業株式会社 ＭｇＯターゲット
JPH07180047A (ja) * 1993-12-24 1995-07-18 Matsushita Electric Ind Co Ltd 強誘電体薄膜素子の製造方法及び製造装置
JPH0949075A (ja) * 1995-08-10 1997-02-18 Sony Corp スパッタ装置
JPH11152564A (ja) * 1997-11-17 1999-06-08 Murata Mfg Co Ltd プリスパッタ方法および装置
JP2003069112A (ja) * 2001-08-28 2003-03-07 Nec Corp 強磁性トンネル接合素子の製造方法
JP4082711B2 (ja) * 2004-03-12 2008-04-30 独立行政法人科学技術振興機構 磁気抵抗素子及びその製造方法
JP2005298894A (ja) * 2004-04-12 2005-10-27 Fujitsu Ltd ターゲットのクリーニング方法及び物理的堆積装置

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10020446B2 (en) 2013-09-13 2018-07-10 Micron Technology, Inc. Methods of forming magnetic memory cells and semiconductor devices
CN105531838B (zh) * 2013-09-13 2018-07-13 美光科技公司 存储器单元、制作方法、半导体装置、存储器系统及电子系统
CN105531838A (zh) * 2013-09-13 2016-04-27 美光科技公司 存储器单元、制作方法、半导体装置、存储器系统及电子系统
US11211554B2 (en) 2013-09-13 2021-12-28 Micron Technology, Inc. Electronic systems including magnetic regions
US10290799B2 (en) 2013-09-13 2019-05-14 Micron Technology, Inc. Magnetic memory cells and semiconductor devices
US10396278B2 (en) 2013-09-18 2019-08-27 Micron Technology, Inc. Electronic devices with magnetic and attractor materials and methods of fabrication
US10014466B2 (en) 2013-09-18 2018-07-03 Micron Technology, Inc. Semiconductor devices with magnetic and attracter materials and methods of fabrication
TWI620232B (zh) * 2013-10-30 2018-04-01 東京威力科創股份有限公司 Film forming device and film forming method
US10454024B2 (en) 2014-02-28 2019-10-22 Micron Technology, Inc. Memory cells, methods of fabrication, and memory devices
US10026889B2 (en) 2014-04-09 2018-07-17 Micron Technology, Inc. Semiconductor structures and devices and methods of forming semiconductor structures and magnetic memory cells
US10505104B2 (en) 2014-04-09 2019-12-10 Micron Technology, Inc. Electronic devices including magnetic cell core structures
US11251363B2 (en) 2014-04-09 2022-02-15 Micron Technology, Inc. Methods of forming electronic devices
US12052929B2 (en) 2014-04-09 2024-07-30 Micron Technology, Inc. Methods of forming electronic devices
US10355044B2 (en) 2014-10-16 2019-07-16 Micron Technology, Inc. Magnetic memory cells, semiconductor devices, and methods of formation
US10347689B2 (en) 2014-10-16 2019-07-09 Micron Technology, Inc. Magnetic devices with magnetic and getter regions and methods of formation
US10680036B2 (en) 2014-10-16 2020-06-09 Micron Technology, Inc. Magnetic devices with magnetic and getter regions
US10134978B2 (en) 2014-12-02 2018-11-20 Micron Technology, Inc. Magnetic cell structures, and methods of fabrication
US10439131B2 (en) 2015-01-15 2019-10-08 Micron Technology, Inc. Methods of forming semiconductor devices including tunnel barrier materials
CN110565059A (zh) * 2019-09-10 2019-12-13 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置
CN110565059B (zh) * 2019-09-10 2021-09-17 天津大学 一种具有室温隧道磁电阻效应的氧化钛基纳米颗粒复合薄膜的制备方法及装置

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Publication number Publication date
JP2009065181A (ja) 2009-03-26
CN101615653A (zh) 2009-12-30
CN101615653B (zh) 2012-07-18
JP5260225B2 (ja) 2013-08-14
JP4679595B2 (ja) 2011-04-27
JP2008172266A (ja) 2008-07-24

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Application publication date: 20090325