CN101389723B - 含碘酸盐的化学机械抛光组合物及方法 - Google Patents

含碘酸盐的化学机械抛光组合物及方法 Download PDF

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Publication number
CN101389723B
CN101389723B CN2007800066859A CN200780006685A CN101389723B CN 101389723 B CN101389723 B CN 101389723B CN 2007800066859 A CN2007800066859 A CN 2007800066859A CN 200780006685 A CN200780006685 A CN 200780006685A CN 101389723 B CN101389723 B CN 101389723B
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China
Prior art keywords
polishing
weight
polishing composition
substrate
iodate
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Expired - Fee Related
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CN2007800066859A
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English (en)
Chinese (zh)
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CN101389723A (zh
Inventor
李守田
菲利普·卡特
张剑
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CMC Materials LLC
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Cabot Microelectronics Corp
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Publication of CN101389723A publication Critical patent/CN101389723A/zh
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN2007800066859A 2006-03-23 2007-03-06 含碘酸盐的化学机械抛光组合物及方法 Expired - Fee Related CN101389723B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/387,558 2006-03-23
US11/387,558 US8551202B2 (en) 2006-03-23 2006-03-23 Iodate-containing chemical-mechanical polishing compositions and methods
PCT/US2007/005722 WO2007111813A2 (en) 2006-03-23 2007-03-06 Iodate-containing chemical-mechanical polishing compositions and methods

Publications (2)

Publication Number Publication Date
CN101389723A CN101389723A (zh) 2009-03-18
CN101389723B true CN101389723B (zh) 2012-05-30

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ID=38269104

Family Applications (1)

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CN2007800066859A Expired - Fee Related CN101389723B (zh) 2006-03-23 2007-03-06 含碘酸盐的化学机械抛光组合物及方法

Country Status (10)

Country Link
US (1) US8551202B2 (https=)
EP (1) EP1996663A2 (https=)
JP (1) JP5576112B2 (https=)
KR (1) KR101372208B1 (https=)
CN (1) CN101389723B (https=)
IL (1) IL192551A (https=)
MY (1) MY150410A (https=)
SG (1) SG170755A1 (https=)
TW (1) TWI358449B (https=)
WO (1) WO2007111813A2 (https=)

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US7922926B2 (en) * 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
CN101906270A (zh) * 2009-06-08 2010-12-08 安集微电子科技(上海)有限公司 一种化学机械抛光液
JP5141792B2 (ja) 2010-06-29 2013-02-13 日立化成工業株式会社 Ｃｍｐ研磨液及び研磨方法
CN102268225B (zh) * 2011-05-30 2014-03-26 上海百兰朵电子科技有限公司 永悬浮钻石研磨液
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN103265893B (zh) * 2013-06-04 2015-12-09 复旦大学 一种基于金属Mo的抛光工艺的抛光液、其制备方法及应用
SG11201600902WA (en) * 2013-09-10 2016-03-30 Hitachi Chemical Co Ltd Slurry, polishing-liquid set, polishing liquid, method for polishing substrate, and substrate
CN107491110B (zh) * 2017-09-20 2019-12-13 山东大学 pH稳定且具有酸碱缓冲的氧化铝分散液及其制备方法
TWI761921B (zh) * 2019-10-30 2022-04-21 南韓商Ｓｋｃ索密思股份有限公司 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法

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CN1556840A (zh) * 2001-09-24 2004-12-22 稀土盐/氧化剂为基础的化学-机械抛光方法

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US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
TWI244498B (en) * 2003-11-20 2005-12-01 Eternal Chemical Co Ltd Chemical mechanical abrasive slurry and method of using the same
JP4644434B2 (ja) * 2004-03-24 2011-03-02 株式会社フジミインコーポレーテッド 研磨用組成物
KR101332302B1 (ko) 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6375693B1 (en) * 1999-05-07 2002-04-23 International Business Machines Corporation Chemical-mechanical planarization of barriers or liners for copper metallurgy
CN1556840A (zh) * 2001-09-24 2004-12-22 稀土盐/氧化剂为基础的化学-机械抛光方法

Also Published As

Publication number Publication date
CN101389723A (zh) 2009-03-18
JP2009530849A (ja) 2009-08-27
EP1996663A2 (en) 2008-12-03
TWI358449B (en) 2012-02-21
WO2007111813A3 (en) 2008-03-13
JP5576112B2 (ja) 2014-08-20
WO2007111813A2 (en) 2007-10-04
TW200801166A (en) 2008-01-01
KR101372208B1 (ko) 2014-03-07
MY150410A (en) 2014-01-15
IL192551A (en) 2013-03-24
KR20080108561A (ko) 2008-12-15
US20070224919A1 (en) 2007-09-27
IL192551A0 (en) 2009-02-11
US8551202B2 (en) 2013-10-08
SG170755A1 (en) 2011-05-30

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