CN101388402A - 有机发光显示器及其制造方法 - Google Patents
有机发光显示器及其制造方法 Download PDFInfo
- Publication number
- CN101388402A CN101388402A CNA2008101462816A CN200810146281A CN101388402A CN 101388402 A CN101388402 A CN 101388402A CN A2008101462816 A CNA2008101462816 A CN A2008101462816A CN 200810146281 A CN200810146281 A CN 200810146281A CN 101388402 A CN101388402 A CN 101388402A
- Authority
- CN
- China
- Prior art keywords
- semiconductor layer
- light emitting
- organic light
- emitting display
- photodiode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 78
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000007547 defect Effects 0.000 claims abstract description 11
- 239000012212 insulator Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 26
- 239000010409 thin film Substances 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 2
- 230000011514 reflex Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 114
- 239000011241 protective layer Substances 0.000 description 11
- 230000008569 process Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000019771 cognition Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070093629A KR100884458B1 (ko) | 2007-09-14 | 2007-09-14 | 유기전계발광장치 및 그의 제조 방법 |
KR1020070093629 | 2007-09-14 | ||
KR10-2007-0093629 | 2007-09-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101388402A true CN101388402A (zh) | 2009-03-18 |
CN101388402B CN101388402B (zh) | 2010-09-29 |
Family
ID=39876401
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101462816A Active CN101388402B (zh) | 2007-09-14 | 2008-08-14 | 有机发光显示器及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8076669B2 (zh) |
EP (1) | EP2037503B1 (zh) |
JP (1) | JP4728309B2 (zh) |
KR (1) | KR100884458B1 (zh) |
CN (1) | CN101388402B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222681A (zh) * | 2011-07-05 | 2011-10-19 | 上海宏力半导体制造有限公司 | Cmos图像传感器及制作方法 |
CN104282678A (zh) * | 2013-07-09 | 2015-01-14 | 鸿富锦精密工业(深圳)有限公司 | 具有光感测功能的发光显示器 |
CN102222681B (zh) * | 2011-07-05 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | Cmos图像传感器及制作方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010041489A1 (ja) * | 2008-10-09 | 2010-04-15 | シャープ株式会社 | フォトダイオード、フォトダイオードを備えた表示装置及びそれらの製造方法 |
US9542892B2 (en) | 2014-06-25 | 2017-01-10 | Apple, Inc. | Organic light-emitting diode display with reduced lateral leakage |
KR102314655B1 (ko) | 2017-05-17 | 2021-10-20 | 애플 인크. | 측방향 누설이 감소된 유기 발광 다이오드 디스플레이 |
CN115188909A (zh) * | 2022-06-30 | 2022-10-14 | 厦门天马显示科技有限公司 | 发光面板和显示装置 |
Family Cites Families (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03232279A (ja) * | 1989-10-19 | 1991-10-16 | Hamamatsu Photonics Kk | 光センサ |
JPH10163517A (ja) | 1996-11-29 | 1998-06-19 | Fujitsu Ltd | 半導体装置及びその製造方法 |
EP0923067B1 (en) * | 1997-03-12 | 2004-08-04 | Seiko Epson Corporation | Pixel circuit, display device and electronic equipment having current-driven light-emitting device |
KR100636093B1 (ko) * | 1999-07-12 | 2006-10-19 | 삼성전자주식회사 | 광검출기 디바이스 및 그 제조방법 |
GB0219771D0 (en) * | 2002-08-24 | 2002-10-02 | Koninkl Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
US7400261B2 (en) * | 2003-04-11 | 2008-07-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device, and vehicle-mounted display device and electronic |
GB0313460D0 (en) | 2003-06-11 | 2003-07-16 | Koninkl Philips Electronics Nv | Colour electroluminescent display devices |
US7161185B2 (en) * | 2003-06-27 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
JP4219755B2 (ja) | 2003-07-16 | 2009-02-04 | ローム株式会社 | イメージセンサの製造方法およびイメージセンサ |
KR100669270B1 (ko) * | 2003-08-25 | 2007-01-16 | 도시바 마쯔시따 디스플레이 테크놀로지 컴퍼니, 리미티드 | 표시 장치 및 광전 변환 소자 |
JP4338490B2 (ja) | 2003-09-29 | 2009-10-07 | 三洋電機株式会社 | 光半導体集積回路装置の製造方法 |
JP2005116681A (ja) | 2003-10-06 | 2005-04-28 | Toshiba Corp | 光半導体受光素子およびその製造方法 |
US7514762B2 (en) * | 2003-12-15 | 2009-04-07 | Koninklijke Philips Electronics N.V. | Active matrix pixel device with photo sensor |
JP2007535728A (ja) | 2004-02-24 | 2007-12-06 | ニューライト・コーポレイション | フラットパネルディスプレイ用ペンライト・タッチスクリーン・データ入力システムおよび方法 |
GB0406540D0 (en) | 2004-03-24 | 2004-04-28 | Koninkl Philips Electronics Nv | Electroluminescent display devices |
KR20050121090A (ko) | 2004-06-21 | 2005-12-26 | (주)아이씨선 | 핑거형 확산층을 갖는 반도체장치와 그 제조방법 |
JP4335104B2 (ja) | 2004-09-09 | 2009-09-30 | 浜松ホトニクス株式会社 | ホトダイオードアレイおよび分光器 |
JP2006091462A (ja) * | 2004-09-24 | 2006-04-06 | Semiconductor Energy Lab Co Ltd | 表示装置 |
KR20060058573A (ko) | 2004-11-25 | 2006-05-30 | 한국전자통신연구원 | 시모스 이미지센서 |
KR20060077138A (ko) | 2004-12-30 | 2006-07-05 | 매그나칩 반도체 유한회사 | 저조도 특성을 향상시킬 수 있는 이미지센서 제조 방법 |
US7636078B2 (en) * | 2005-05-20 | 2009-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
KR100821070B1 (ko) | 2006-11-07 | 2008-04-08 | 삼성에스디아이 주식회사 | 포토 다이오드 및 이를 이용한 유기 전계 발광표시장치 |
US8477125B2 (en) * | 2005-12-21 | 2013-07-02 | Samsung Display Co., Ltd. | Photo sensor and organic light-emitting display using the same |
US7449697B2 (en) * | 2006-01-04 | 2008-11-11 | Tpo Displays Corp. | Organic electroluminescent devices and fabrication methods thereof |
US20070164293A1 (en) * | 2006-01-13 | 2007-07-19 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device and method for the production of light-emitting device |
JP4007390B2 (ja) * | 2006-03-01 | 2007-11-14 | エプソンイメージングデバイス株式会社 | 電気光学装置及び電子機器 |
KR100759681B1 (ko) * | 2006-03-29 | 2007-09-17 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
KR100759682B1 (ko) * | 2006-03-30 | 2007-09-17 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
KR100759689B1 (ko) | 2006-04-18 | 2007-09-17 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
KR100762682B1 (ko) * | 2006-05-03 | 2007-10-01 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 및 그의 제조방법 |
KR100722111B1 (ko) | 2006-05-09 | 2007-05-25 | 삼성에스디아이 주식회사 | 포토 다이오드를 구비하는 유기 발광 표시장치 |
KR100769444B1 (ko) * | 2006-06-09 | 2007-10-22 | 삼성에스디아이 주식회사 | 유기 전계 발광표시장치 |
KR100769432B1 (ko) | 2006-07-04 | 2007-10-22 | 삼성에스디아이 주식회사 | 유기전계발광 소자 및 그의 제조 방법 |
US8514165B2 (en) * | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20080185596A1 (en) * | 2007-02-02 | 2008-08-07 | Tpo Displays Corp. | System for displaying images |
US7619194B2 (en) * | 2007-02-26 | 2009-11-17 | Epson Imaging Devices Corporation | Electro-optical device, semiconductor device, display device, and electronic apparatus having the display device |
JP4488011B2 (ja) * | 2007-02-26 | 2010-06-23 | エプソンイメージングデバイス株式会社 | 電気光学装置、半導体装置、表示装置およびこれを備える電子機器 |
US8334536B2 (en) * | 2007-03-16 | 2012-12-18 | Samsung Display Co., Ltd. | Thin film transistor, organic light emitting diode display device having the same, flat panel display device, and semiconductor device, and methods of fabricating the same |
-
2007
- 2007-09-14 KR KR1020070093629A patent/KR100884458B1/ko not_active IP Right Cessation
- 2007-11-02 JP JP2007286521A patent/JP4728309B2/ja active Active
-
2008
- 2008-04-07 US US12/098,631 patent/US8076669B2/en active Active
- 2008-08-14 CN CN2008101462816A patent/CN101388402B/zh active Active
- 2008-09-12 EP EP08164244.9A patent/EP2037503B1/en active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102222681A (zh) * | 2011-07-05 | 2011-10-19 | 上海宏力半导体制造有限公司 | Cmos图像传感器及制作方法 |
CN102222681B (zh) * | 2011-07-05 | 2016-12-14 | 上海华虹宏力半导体制造有限公司 | Cmos图像传感器及制作方法 |
CN104282678A (zh) * | 2013-07-09 | 2015-01-14 | 鸿富锦精密工业(深圳)有限公司 | 具有光感测功能的发光显示器 |
Also Published As
Publication number | Publication date |
---|---|
US8076669B2 (en) | 2011-12-13 |
KR100884458B1 (ko) | 2009-02-20 |
EP2037503A2 (en) | 2009-03-18 |
CN101388402B (zh) | 2010-09-29 |
JP4728309B2 (ja) | 2011-07-20 |
EP2037503B1 (en) | 2014-11-19 |
EP2037503A3 (en) | 2009-05-06 |
US20090072258A1 (en) | 2009-03-19 |
JP2009071258A (ja) | 2009-04-02 |
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Legal Events
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C06 | Publication | ||
C41 | Transfer of patent application or patent right or utility model | ||
PB01 | Publication | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20090123 Address after: Gyeonggi Do, South Korea Applicant after: Samsung Mobile Display Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Samsung SDI Co., Ltd. |
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ASS | Succession or assignment of patent right |
Owner name: SAMSUNG MOBILE DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG SDI CO., LTD. Effective date: 20090123 |
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG DISPLAY CO., LTD. Free format text: FORMER OWNER: SAMSUNG MOBILE DISPLAY CO., LTD. Effective date: 20120928 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120928 Address after: Gyeonggi Do, South Korea Patentee after: Samsung Display Co., Ltd. Address before: Gyeonggi Do, South Korea Patentee before: Samsung Mobile Display Co., Ltd. |