CN101385329B - 使用斜变转移栅极时钟的a/d转换器 - Google Patents

使用斜变转移栅极时钟的a/d转换器 Download PDF

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CN101385329B
CN101385329B CN200780005721XA CN200780005721A CN101385329B CN 101385329 B CN101385329 B CN 101385329B CN 200780005721X A CN200780005721X A CN 200780005721XA CN 200780005721 A CN200780005721 A CN 200780005721A CN 101385329 B CN101385329 B CN 101385329B
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voltage
charge
comparator
electric charge
transfer gate
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CN101385329A (zh
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W·徐
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN200780005721XA 2006-02-15 2007-02-07 使用斜变转移栅极时钟的a/d转换器 Active CN101385329B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/354,444 2006-02-15
US11/354,444 US7652706B2 (en) 2006-02-15 2006-02-15 Pixel analog-to-digital converter using a ramped transfer gate clock
PCT/US2007/003332 WO2007097918A1 (en) 2006-02-15 2007-02-07 A/d converter using ramped transfer gate clocks

Publications (2)

Publication Number Publication Date
CN101385329A CN101385329A (zh) 2009-03-11
CN101385329B true CN101385329B (zh) 2011-11-30

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CN200780005721XA Active CN101385329B (zh) 2006-02-15 2007-02-07 使用斜变转移栅极时钟的a/d转换器

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US (1) US7652706B2 (enExample)
EP (1) EP2005731B1 (enExample)
JP (1) JP4916517B2 (enExample)
CN (1) CN101385329B (enExample)
TW (1) TWI403094B (enExample)
WO (1) WO2007097918A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8018514B1 (en) * 2006-05-04 2011-09-13 Thermo Fisher Scientific Inc Charge injection device camera system for radiation-hardened applications
JP2009081705A (ja) * 2007-09-26 2009-04-16 Panasonic Corp 固体撮像装置、受光強度測定装置、および受光強度測定方法
JP2009124514A (ja) 2007-11-15 2009-06-04 Sony Corp 固体撮像素子、およびカメラシステム
US20090206889A1 (en) * 2008-02-15 2009-08-20 Mathstar, Inc. Method and Apparatus for Controlling Power Surge in an Integrated Circuit
JP2010258827A (ja) * 2009-04-24 2010-11-11 Sony Corp 黒レベル補正回路および固体撮像装置
JP5893550B2 (ja) * 2012-04-12 2016-03-23 キヤノン株式会社 撮像装置及び撮像システム
KR102127587B1 (ko) 2016-01-15 2020-06-26 인비사지 테크놀로지스, 인크. 글로벌 전자 셔터를 포함하는 전자 디바이스
CN109155322B (zh) * 2016-06-08 2023-02-21 因维萨热技术公司 具有电子快门的图像传感器
KR101774779B1 (ko) * 2016-09-05 2017-09-06 한국표준과학연구원 거리 측정 장치 및 거리 측정 장치의 동작 방법
CN109067396A (zh) * 2018-07-06 2018-12-21 北京空间机电研究所 一种红外焦平面像元级电压分段计数型模数转换器

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067113A (en) * 1996-09-12 2000-05-23 Vsli Vision Limited Offset noise cancellation in array image sensors
US6529240B2 (en) * 1999-11-18 2003-03-04 Agilent Technologies, Inc. Random access memory integrated with CMOS sensors
US6667768B1 (en) * 1998-02-17 2003-12-23 Micron Technology, Inc. Photodiode-type pixel for global electronic shutter and reduced lag
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
CN1649165A (zh) * 2004-01-30 2005-08-03 索尼株式会社 固态图像拾取装置和模块型固态图像拾取装置
US6927796B2 (en) * 2001-09-24 2005-08-09 The Board Of Trustees Of The Leland Stanford Junior University CMOS image sensor system with self-reset digital pixel architecture for improving SNR and dynamic range
CN1689164A (zh) * 2002-08-23 2005-10-26 微米技术有限公司 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps
US6963373B2 (en) * 2000-06-20 2005-11-08 Canon Kabushiki Kaisha Image processing apparatus which reduces noise by adjusting the transition timing

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2500436B2 (ja) * 1993-05-10 1996-05-29 日本電気株式会社 信号処理装置
JP2879670B2 (ja) * 1997-03-28 1999-04-05 広島大学長 ２次元情報処理装置
US6344877B1 (en) * 1997-06-12 2002-02-05 International Business Machines Corporation Image sensor with dummy pixel or dummy pixel array
US6697114B1 (en) * 1999-08-13 2004-02-24 Foveon, Inc. Triple slope pixel sensor and arry
DE19959539A1 (de) * 1999-12-09 2001-06-13 Thomson Brandt Gmbh Bildaufnehmer
KR100399954B1 (ko) * 2000-12-14 2003-09-29 주식회사 하이닉스반도체 아날로그 상호 연관된 이중 샘플링 기능을 수행하는씨모스 이미지 센서용 비교 장치
KR100381026B1 (ko) * 2001-05-22 2003-04-23 주식회사 하이닉스반도체 펀치전압과 포토다이오드의 집전양을 증가시킬 수 있는씨모스 이미지 센서 및 그 제조 방법
US7095439B2 (en) 2002-04-04 2006-08-22 Motorola, Inc. Image sensor circuit and method
FR2846147B1 (fr) * 2002-10-16 2005-09-16 St Microelectronics Sa Commande d'une cellule photosensible
US7215369B2 (en) * 2003-04-02 2007-05-08 Micron Technology, Inc. Compact pixel reset circuits using reversed current readout
JP4053007B2 (ja) * 2004-01-09 2008-02-27 シャープ株式会社 固体撮像素子およびその信号読み出し方法
US7385636B2 (en) * 2004-04-30 2008-06-10 Eastman Kodak Company Low noise sample and hold circuit for image sensors
GB0412296D0 (en) * 2004-06-02 2004-07-07 Council Cent Lab Res Councils Imaging device
JP4347819B2 (ja) * 2005-02-15 2009-10-21 シャープ株式会社 固体撮像素子およびその駆動方法
US7382008B2 (en) * 2006-05-02 2008-06-03 Eastman Kodak Company Ultra-small CMOS image sensor pixel using a photodiode potential technique
JP2009081705A (ja) * 2007-09-26 2009-04-16 Panasonic Corp 固体撮像装置、受光強度測定装置、および受光強度測定方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6067113A (en) * 1996-09-12 2000-05-23 Vsli Vision Limited Offset noise cancellation in array image sensors
US6667768B1 (en) * 1998-02-17 2003-12-23 Micron Technology, Inc. Photodiode-type pixel for global electronic shutter and reduced lag
US6529240B2 (en) * 1999-11-18 2003-03-04 Agilent Technologies, Inc. Random access memory integrated with CMOS sensors
US6963373B2 (en) * 2000-06-20 2005-11-08 Canon Kabushiki Kaisha Image processing apparatus which reduces noise by adjusting the transition timing
US6927796B2 (en) * 2001-09-24 2005-08-09 The Board Of Trustees Of The Leland Stanford Junior University CMOS image sensor system with self-reset digital pixel architecture for improving SNR and dynamic range
CN1689164A (zh) * 2002-08-23 2005-10-26 微米技术有限公司 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps
US20050083421A1 (en) * 2003-10-16 2005-04-21 Vladimir Berezin Dynamic range enlargement in CMOS image sensors
CN1649165A (zh) * 2004-01-30 2005-08-03 索尼株式会社 固态图像拾取装置和模块型固态图像拾取装置

Also Published As

Publication number Publication date
EP2005731B1 (en) 2014-04-09
JP4916517B2 (ja) 2012-04-11
CN101385329A (zh) 2009-03-11
US7652706B2 (en) 2010-01-26
TW200740127A (en) 2007-10-16
WO2007097918A1 (en) 2007-08-30
JP2009527192A (ja) 2009-07-23
EP2005731A1 (en) 2008-12-24
US20070188640A1 (en) 2007-08-16
TWI403094B (zh) 2013-07-21

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