US6067113A - Offset noise cancellation in array image sensors - Google Patents

Offset noise cancellation in array image sensors Download PDF

Info

Publication number
US6067113A
US6067113A US08/749,056 US74905696A US6067113A US 6067113 A US6067113 A US 6067113A US 74905696 A US74905696 A US 74905696A US 6067113 A US6067113 A US 6067113A
Authority
US
United States
Prior art keywords
pixel
means
signal
column
offset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
US08/749,056
Inventor
Jonathan Ephriam David Hurwitz
Peter Brian Denyer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
VLSI Vision Ltd
Original Assignee
VLSI Vision Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GBGB9619088.9A priority Critical patent/GB9619088D0/en
Priority to GB9619088 priority
Application filed by VLSI Vision Ltd filed Critical VLSI Vision Ltd
Assigned to VLSI VISION LIMITED reassignment VLSI VISION LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: DENYER, PETER B., HURWITZ, JONATHAN E.D.
Application granted granted Critical
Publication of US6067113A publication Critical patent/US6067113A/en
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/374Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/357Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N5/365Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N5/3651Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection and correction
    • H04N5/3658Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection and correction for reducing the column or line fixed pattern noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/335Transforming light or analogous information into electric information using solid-state image sensors [SSIS]
    • H04N5/369SSIS architecture; Circuitry associated therewith
    • H04N5/378Readout circuits, e.g. correlated double sampling [CDS] circuits, output amplifiers or A/D converters

Abstract

An integrated circuit active pixel image sensor comprises an array of active pixels having associated therewith one capacitor in each pixel column for storing a combined pixel output signal comprising an image signal and a fixed offset signal and another capacitor in each column for capturing another signal produced when the pixel is reset. The array may be read row-by-row. Each column includes a comparator and a data latch via which a digitized fixed offset corrected pixel output signal is obtained using a ramp voltage source and a digital count broadcaster provided in the sensor.

Description

BACKGROUND OF THE INVENTION

This invention relates to the cancellation of fixed pattern noise in active pixel sensors arrays and, in particular, to a method and apparatus for cancelling voltage offset noise in active pixel image sensor arrays.

Active pixel sensor (APS) arrays are solid state image sensing structures, typically manufactured using CMOS technology. They are distinguished by integrating some form of active electronic circuitry within each pixel to produce a buffered or amplified representation of the small signal charge induced by photoelectric conversion in the pixel. Typically the pixel output takes the form of a low-impedance voltage signal.

Whilst the low impedance pixel output is useful in the pixel reading operation, each buffer or amplifier commonly exhibits a fixed voltage offset which varies randomly with pixel location. If these offsets are left uncorrected, the resulting images produced from the pixel outputs are marred by a fixed speckled pattern.

This has been recognised by others working in this field, and techniques have been developed to cancel these offsets.

One example of such a technique is described in U.S. Pat. No.4,942,474 (Akimoto et al.), who teach the use of two capacitors in each column of pixels in the pixel array. A row of pixels is first read into one row of capacitors, which then each hold one sample of a pixel output with combined signal and offset. The same row of pixels is then reset and the pixel outputs during reset are stored in the second row of capacitors. As the reset output from the pixels also contains the same offset, then the difference between the values stored on the two capacitors in each column represents solely the signal value that is to be detected. This differencing may occur in many ways all of which involve reading or "scanning out" from the pixel array the stored values from the pair of capacitors in each column and differencing each pair of scanned out values.

SUMMARY OF THE INVENTION

According to one broad aspect of the present invention, an integrated circuit active pixel image sensor comprises: an array of active pixels arranged in rows and columns; signal storage means associated with said active pixels for storing one of: a fixed offset signal, and a combined pixel output signal comprising an image signal and a fixed offset signal; pixel output signal capture means for capturing the other one of said fixed offset signal, and said combined fixed output signal; and fixed-offset-correction means provided in said image sensor and formed and arranged so as to apply said fixed offset signal to said combined pixel output signal so as to produce a fixed-offset-corrected pixel output signal which can be read directly from the image sensor.

According to a first, preferred, aspect of the present invention an integrated circuit active pixel image sensor comprises: an array of active pixels arranged in rows and columns; signal storage means associated with said active pixels for storing fixed offset output signals from said pixels; pixel output signal capture means for capturing combined pixel output signals each comprising an image signal and a fixed offset signal from a respective pixel; and fixed-offset-correction means provided in said image sensor and formed and arranged so as to apply the stored fixed-offset output signal from each pixel to said combined pixel output signals so as to produce fixed-offset-corrected pixel output signals which can be scanned out directly from the image sensor.

According to another preferred aspect of the present invention an integrated circuit active pixel image sensor comprises: an array of active pixels arranged in rows and columns; signal storage means associated with said active pixels for storing combined pixel output signals which each comprise an image signal and a fixed offset signal from a single pixel;and fixed-offset-correction means provided in said image sensor and formed and arranged so as to apply a respective offset signal correction to each said stored combined pixel output signal so as to produce respective fixed-offset-corrected pixel output signals which can be scanned out directly from the image sensor.

Preferably, in each column of the pixel array there is provided a said signal storage means for storing a said combined pixel output signal from any nominated one of the pixels in said column; and fixed-offset-correction means formed and arranged to apply a said fixed offset signal correction to a said combined pixel output signal stored in said storage means, so as to produce a said fixed-offset-corrected pixel output signal which can be scanned out directly from said column of the array.

Preferably said offset signal correction is derived from a pixel output signal from the respective active pixel in a reset condition thereof.

Said signal storage means preferably comprises capacitor means. Preferably, each column of the pixel array is provided with respective capacitor means. One or more capacitors may be provided in each said column. At least two capacitors arranged in series may be provided in each column.

The fixed-offset-correction means may be implemented in various different ways comprising one or more components selected from: at least one switch means, at least one capacitor, electronic buffer means, comparator means, latch means, one or more constant reference voltage sources, and one or more ramp voltage sources. Each column of the pixel array may be provided with respective fixed-offset-correction means.

According to another aspect of the invention, an integrated circuit active pixel image sensor comprises an array of active pixels arranged in rows and columns, and pixel read and reset means for reading and resetting said pixels row by row, wherein each of-said pixel columns is provided with: first capacitor means selectively connectable to each pixel in said column for storing a combined signal comprising an image signal and a fixed offset signal, from a nominated pixel in said column and a nominated one of said rows; second capacitor means in series with said first capacitor means; a reference voltage input means via which a constant reference voltage may be applied to said second capacitor means so as to hold said second capacitor means at a constant reference voltage while said combined pixel output signal is stored on said first capacitor means; and first switch means for isolating said second capacitor means from said reference voltage input means while said pixel is reset, whereby said first and second capacitor means are coupled so as to enable said first capacitor means to at least partially discharge through said second capacitor means; and second switch means for isolating said second capacitor means from said first capacitor means so as to allow a fixed-offset-corrected signal present on said second capacitor means to be read out; and said image sensor further comprises signal read out means connectable to each of said pixel columns for reading out said fixed-offset-corrected signal from each of said second capacitor means. It will be appreciated that in practice the first capacitor means may be physically connected all the time to all the pixels in each column but is only selectively connected to a pixel output signal producing portion thereof when "reading" or addressing a particular pixel.

The signal read out means may, for example, comprise an output bus and at least one charge detecting transducer. Each column of said pixel array may also be provided with a voltage buffer connected between said first capacitor means and said column of pixels. Alternatively, and preferably, each said column is provided with a voltage buffer connected between said first and second capacitor means. In the latter case, advantageously third capacitor means is also provided, in series with said first capacitor means, and in parallel with said second capacitor means, for storing a buffer offset signal.

According to a third aspect of the invention, an integrated circuit active pixel image sensor comprises an array of active pixels arranged in rows and columns, and pixel read and reset means for reading and resetting said pixels row by row, wherein each of said pixel columns is provided with: first capacitor means selectively connectable to each pixel in said column for storing a combined pixel output comprising an image signal and a fixed offset signal, from a nominated pixel in said column and a nominated one of said rows; second capacitor means in series with said first capacitor means and also selectively connectable to each pixel in said column, for storing a further signal obtained when said first and second capacitor means are both connected to said nominated pixel and said nominated pixel is reset; voltage reference input means via which a constant reference voltage may be applied to one terminal of said first capacitor means while said combined pixel output signal is stored on said first capacitor means; voltage reference input means via which a constant reference voltage may be applied to one terminal of said second capacitor means while said further signal is stored on said second capacitor means; and comparator means for comparing said signals stored on said first and second capacitor means so as to obtain a fixed-offset-corrected pixel output signal for said nominated pixel.

The first and second capacitor means are preferably each selectively connectable to said pixel by a respective switch means provided therefor.

The image sensor preferably includes at least one constant reference voltage source selectively connectable to said reference voltage input means of said pixel columns.

The image sensor may further comprise a ramp voltage source which is selectively connectable to one terminal of one of said first and second capacitor means and latch means connected to an output terminal of said comparator means for detecting a change in polarity in an output from said comparator means whereby said comparator means functions as a switch.

According to a yet further aspect of the invention, an integrated circuit active pixel image sensor comprises an array of active pixels arranged in rows and columns, and pixel read and reset means for reading and resetting said pixels row by row, wherein each of said pixel columns is provided with: capacitor means for storing a combined pixel output comprising an image signal and a fixed offset signal, from a nominated pixel in said column and a nominated one of said rows; comparator means having a negative input, a positive input and an output terminal, one terminal of said capacitor means being connected to said nominated pixel and the other terminal of said capacitor means being connected to said negative input of said comparator means; negative feedback means switchably connected between said first capacitor means and said negative input of the comparator means, for connection therebetween while said combined pixel output is stored on said capacitor means; and a voltage input means via which a constant reference voltage may be applied to the positive input of said comparator means while said combined pixel output signal is stored on said capacitor means, and via which a ramp voltage may be applied to said positive input of the comparator means while said pixel is reset so as to enable a fixed-offset-corrected signal discharged from said capacitor means to be detected by a matching ramp voltage signal value.

One or more constant reference voltage source(s) and, where necessary, ramp voltage means may preferably be provided in the integrated sensor. Alternatively, they may be provided externally of the image sensor.

Said ramp voltage means is preferably a monotonic voltage ramp.

A latch means is preferably connected to an output terminal of said comparator means for detecting a change in polarity in an output from said comparator means whereby said comparator means functions as a switch which switches when said ramp voltage signal value matches said fixed-offset-corrected signal discharged from said capacitor means.

Said image sensor according to said third and fourth aspects of the invention preferably further comprises digital count broadcasting means adapted to broadcast to each of said columns of the pixel array, simultaneously with said ramp voltage means, a digital count signal corresponding to a voltage produced by said ramp voltage means. The latch means is preferably adapted to latch said digital count signal at a switching point of said comparator output so as to obtain a digitised fixed-offset-corrected pixel output signal for said nominated pixel.

Said active pixels may be of photodiode type or, alternatively, of photogate type.

According to a still further aspect of the invention, a fixed-offset-cancellation method for an integrated circuit active pixel image sensor having an array of active pixels arranged in rows and columns, the method comprising the steps of:

(a) for each row of pixels, storing in said integrated circuit active pixel image sensor one of: a fixed offset signal read from a said pixel, and a combined pixel output signal read from each pixel in the row, said combined pixel output signals each comprising an image signal and a fixed offset signal read from a said pixel;

(b) capturing the other one of said fixed offset signal and said combined pixel output signal;

(c) applying a respective said fixed offset signal to each said combined pixel output signal, within said active pixel image sensor, so as to produce a fixed-offset-corrected pixel output signal; and

(d) scanning out said fixed-offset-corrected pixel output signals directly from the image sensor.

Preferably the method includes the step of deriving said offset signal correction from a pixel output signal from the respective active pixel in a reset condition thereof.

Preferably, the combined pixel output signals are stored on first capacitor means provided in the active pixel image sensor. Where this is the case, step (b) may be achieved by the following sub-steps: providing second capacitor means in series with said first capacitor means; connecting said second capacitor means to a constant reference voltage source, so as to hold said second capacitor means at a constant reference voltage, while the combined pixel output signals are stored on said first capacitor means; isolating said second capacitor means from said constant reference voltage source so as to couple said first and second capacitor means together, thereby allowing said first capacitor means to at least partially discharge onto said second capacitor means; and resetting said pixels, whereby said fixed-offset-corrected pixel output signals are stored on said second capacitor means.

Advantageously, said fixed-offset-corrected pixel outputs are read directly from the image sensor in digitised form. Preferably, the fixed-offset-corrected pixel outputs are produced in analog form in said image sensor and are converted to digital form prior to being read out from said image sensor. Said conversion may be performed by serial analog to digital (A/D) conversion, preferably using latching means and voltage ramp means.

Preferably, said pixels are read row-by-row and, preferably, said fixed-offset-corrected pixel output signals are read out row-by-row, directly from said image sensor. The fixed-offset-corrected pixel output signals may be read out using an output bus.

Respective first and second capacitor means are preferably provided for each column of the array. Alternatively, first and second capacitor means could be provided for each pixel in the array.

According to a sixth aspect of the invention, a fixed-offset-cancellation method for an integrated circuit active pixel image sensor having an array of active pixels arranged in rows and columns, the method comprising the steps of: reading each row of pixels twice, once when the pixels contain a first signal comprising both an image signal to be detected and an offset signal, and once in a reset condition of the pixels when the pixels each contain a second signal comprising said offset signal; for each pixel in a said row, forming within a respective column of the array the difference between said first and second signals, and reading said difference at an output of said image sensor.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the invention will now be described, by way of example only, and with reference to the accompanying drawings in which:

FIG. 1 is a schematic illustration of a known type of pixel array image sensor;

FIG. 2 shows schematically a portion of an active pixel image sensor according to a first embodiment of the invention;

FIG. 3 shows schematically a portion of an active pixel image sensor according to a second embodiment of the invention;

FIG. 4 shows schematically a portion of an active pixel image sensor according to a third embodiment of the invention; and

FIG. 5 shows schematically a portion of an active pixel image sensor according to a fourth embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 1 shows schematically an integrated image sensor 1 comprising an array of active pixels 2 arranged in rows 3 and columns 4. The image sensor 1 is integrated on a chip. The pixels 2 are preferably fabricated in CMOS technology and incorporate photosensitive solid state devices such as photodiodes or photogate structures.

FIG. 2 is an enlarged view of one active pixel 2 of the active pixel image sensor 1, according to a first embodiment of the present invention. The pixel 2 comprises a photodiode 5 and associated transistor circuitry 7 for amplifying or "buffering" the output from said photodiode (indicated in notational form). The pixel 2 is connected to a column 4 of the array. The column 4 comprises a signal line via which one pixel from each row of the array may be addressed and its output signal read or "scanned" out. A first capacitor C1 is provided in the column 4, so as to be in electronic connection with each pixel 2 in said column 4. An additional amplifier or "buffer" 10 may be connected between the first capacitor C1 (hereinafter referred to as "C1") and the pixels 2 in the column 4, although this is not essential. A second capacitor C2 (hereinafter referred to as "C2") is also provided in the column 4, in series with the first capacitor C1. A first terminal 11 of C1 is connected to the column 4 (via the buffer 10, where provided) and the second terminal 12 is connectable by a first switch S1 to a first terminal 13 of C2. The other, second terminal 14 of C2 is connected to electrical earth, as shown in FIG. 2.

A constant voltage reference Vref is provided by means of, for example, a buffered band-gap derived voltage reference and is connectable to the column 4 at a point 15, between the first and second capacitors C1, C2, by a second switch S2, so as to hold the first terminal 13 of C2 and the second terminal 12 of C1 at voltage Vref. The first switch S1 is located between the first terminal 13 of C2 and the connection 15 to the constant reference voltage Vref. The first terminal 13 of C2 is also connectable to an output bus 17 by a third switch S3, for reading a charge stored on C2 into an output charge detector 19 in the form of a charge transducer (preferably integrated on the same chip as the image sensor) which outputs the detected charge as a voltage output Vout.

An arrangement like that shown in FIG. 2 is provided in each column of the pixel array. The same reference voltage Vref is provided to all the columns 4 of the pixel array. In use, the pixel array is read row-by-row by means of sequential address means e.g. horizontal and vertical shift registers 20,22, indicated in block form in FIG. 1. For each pixel 2 in a nominated row 3 (nominated by the sequential address means) an arrangement as shown in FIG. 2 operates as follows. Switch S3 is open. An image signal (in the form a light signal) to be detected by the image sensor 1 is allowed to be incident upon the pixels 2 of the array. The image signal may be constantly incident upon the pixel array, or an optical shutter, for example, may be used for exposing the pixel array for a predetermined exposure period. While the image signal is incident on the array. The first switch S1 is closed, and the second switch S2 is closed so as to hold the first terminal 13 of C2 at voltage Vref. C2 is charged with the signal Vref. Node 50 of C1 charges to the combined output signal (Vreset-Vsig-Voff) from the active pixel, Vsig being the image signal to be detected, Vreset being a fixed pixel reset potential and Voff being a (fixed) voltage offset from the active electronic circuitry in the pixel 2. (Voff varies randomly from pixel to pixel in the array.)

Next, the second switch S2 is opened, thus removing the voltage clamp on C2, and the pixels in the chosen row are reset via MOS switch X. Now the pixel output 4 contains only the offset reset value, Vreset-Voff. As C2 is in series with C1, the potential on node 13 of C2 will change by:

Vsig.(C1/(C1+C2 ))

Therefore, it can be shown that the total signal V2 stored on C2 is:

V2=Alpha.Vsig+Vref

where Alpha is an attenuation factor, and Vref is common to all capacitors C2. By opening the first switch S1, V2 is stored on C2. V2 is subsequently read out from C2 by closing the third switch S3 to connect the first terminal 13 of C2 to the output bus 17. As the offset signal Voff has been cancelled in the total signal V2 on C2, a fixed-offset-corrected pixel output Vout=V2 for the pixel 2 can thus be read directly from C2. This is done for each pixel 2 in the nominated row of pixels. The fixed-offset-corrected pixel outputs Vout may be stored in an image frame store (not shown) provided externally of the image sensor 1. The process is then repeated for another row of pixels, and so on until a complete image can be compiled from the individual pixel outputs from all the pixels in the array.

Where a buffer 10 is provided between the pixel 2 and the first capacitor C1, as indicated in FIG. 2, any voltage offset produced by the buffer 10 is similarly cancelled by the arrangement of FIG. 2.

FIG. 3 shows an improvement to the implemented offset cancellation arrangement shown in FIG. 2. Like parts to those shown in FIG. 2 are indicated by like reference numerals. In FIG. 3 a voltage buffer B1 is added to each column 4 of the array, between C1 and the first switch S1. The purpose of the buffer B1 is to significantly reduce the attenuation facto, Alpha, caused by the C1, C2 potential divider arrangement when the capacitors C1 and C2 are coupled together by opening the second switch S2. The buffer B1 has a small input parasitic capacitance C 4, as shown in FIG. 3. C4 is much smaller than C2. This has the effect of reducing the attenuation factor,Alpha, due to the dominance of C1 over the smaller buffer input parasitic capacitance C4. It can be shown that the attenuation factor becomes:

Alpha 2=(C1/(C1+C4 )).Gbuff

where Gbuff is the gain factor of the buffer (typically 0.9) and C4 is very small compared with C1. Thus, in this configuration, not only is the gain high, but it also becomes very well matched between columns, as small deviations in C1 or C4 have little effect under these circumstances, and the gain of buffers, such as the simple source follower type, is also known to be very well matched between adjacent devices on the same chip.

Unfortunately, adding the buffer B1 introduces a new offset, Voff2 which will deviate per column due to threshold voltage mismatches. This is countered by the provision of a third capacitor C3 (hereinafter referred to as "C3 "), in series with C1 and in parallel to C2, as shown in FIG. 3. A first terminal 24 of C3 is connectable, by a fourth switch S4, to the buffer B1 output and to the first terminal 13 of C2, above the first switch S1. The second terminal 25 of C3 is connected to electrical earth. By closing fourth switch S4, C3 stores the condition at the buffer B1 output when the first and second switches S1,S2 are closed. The signal V3 stored on C3 is thus:

V3=(Vref-Voff 2)

where Voff2 is the buffer B1 offset measured at an input voltage of Vref. Fourth switch S4 is then closed to store V3 on C3.

The signal V2 stored on C2 when the second switch S2 is subsequently opened can be shown to be:

______________________________________       Alpha2.Vsig + Vref - Voff2  =    Vsig.Alpha.Beta + Vref - Voff2______________________________________

where Beta is the gain (Gbuff) of the buffer B1 stage to signals measured with respect to Vref.

A second output bus 30 is connectable by a fifth switch S5 to the first terminal 24 of C3 to enable the stored signal V3 to be read out from C3. The potential difference between C2 and C3 is obtained, for example using a comparator(not shown) provided in the image sensor 1 to obtain a resultant offset-corrected pixel output, Vout, where:

Vout=V2-V3=Vsig.Alpha.Beta

As mentioned above, good matching of both Alpha and Beta attenuation factors may be expected from similar circuits provided on the same chip.

FIG. 4 shows another embodiment of the invention applied to a digital sensor architecture. Again, like components to those shown in FIGS. 2 and 3 are referenced by like reference numerals. In the embodiment of FIG. 4, first and second capacitors C5, C6 are provided in each column of the pixel array, a first terminal 32,30 of each of C5 and C6 being switchably connectable by means of a respective switches S6, S7 to the pixels in the respective column for receiving signals from a pixel in a nominated row. A second terminal 36,34 of each of C5 and C6 is selectively connectable to a respective constant voltage source V6, V7. At least one ramp voltage source is also provided in the sensor 1 selectively connectable to a respective one of the second terminals 36,34 of C5 and C6. The first terminals 32,30 of C5 and C6 are also connected to respective inputs of a comparator 40 having one positive and one negative input, as shown in FIG. 4. A data latch 46 (indicated in block form only) is connected to the output of the comparator 40. The latch is configured to store the condition of data bus 42, when said output changes polarity. Data bus 42 communicates with a digital ramp generated in ramp counter 44. The condition of the data bus 42 is indicative of the digital ramp count. A separate data latch 46 is provided in each column of the array. Data bus 42 and ramp counter 44 are common to all columns.

In use, constant reference voltages V6 and V7 (which may be the same voltage or different voltages) are applied respectively to the second terminals 36,34 of the two capacitors C5, C6, switch S6 is closed and switch S7 is opened and the pixel array is exposed to an incoming image so that (once switch S6 is re-opened) a combined pixel output signal, comprising an image signal Vsig to be detected and an offset signal Voff-Vreset, stored in C5. Switch S7 is subsequently closed and the pixel 2 is reset. The signal stored on C5 is:

Vreset-Vsig-Voff

while the resultant signal stored on C6 is:

Vreset-Voff

The potential difference between the two capacitors is thus equal to Vsig, the signal to be detected. Vsig is obtained using the following method.

The constant voltage reference V6 applied to terminal 36 of C5 is replaced by a monotonic analog voltage ramp Vr, commencing at value V6. The signal output from the comparator 40 will switch when the ramp voltage is sufficient to equalise the potential at the top plates of the capacitors i.e. when the first terminals 32,30 of the capacitors C5 and C6 are at equal potential. It can be shown that this will be the case when Vr=Vsig.

The ramp counter 44 generates and broadcasts a digital ramp count corresponding to the analog voltage ramp Vr, across all the pixel columns 4. The ramp counter 44 may be provided integrally in the sensor, or externally of the sensor. The latch 46 communicates with the ramp counter 44 via the output bus 42, and with the ramp voltage source, so that the value of the digital count is latched at the switching point of the comparator 40 the instant that the ramp voltage Vr=Vsig. The latched digital count provides a digital fixed-offset-corrected pixel output which may be read directly at an output (not shown) of the image sensor 1 and stored in an image frame store 46 provided in, for example, a camera in which the integrated image sensor is incorporated.

A further embodiment of the invention is shown in FIG. 5 which also enables a digitised fixed-offset-corrected signal to be obtained. In this embodiment each pixel column 4 is provided with a capacitor C1 in series with the pixel 2, a first terminal 50 of C1 being connected to the pixels 2 in said column 4 and a second terminal 52 being connected to the negative input of a comparator 54 having one positive and one negative input as shown in FIG. 5. A negative feedback loop 56 is provided, containing a switch S8, so that when switch S8 is closed the second (lower) terminal 52 of C1 is biased at the switching point of the comparator 54.

In use, the pixel 2 is read first with the switch S8 closed and the pixel array is exposed to an incoming image while a constant reference voltage V9 is applied to the positive comparator input, thereby storing a signal (Vreset-Vsig-Voff) on C1. Switch S8 is subsequently opened and the pixel 2 is reset. C1 discharges by the amount of the signal to be detected i.e. Vsig. V9 is simultaneously replaced by a ramp voltage Vr commencing at value V9. A similar latch mechanism 46 and digital count generating and broadcasting means 42, are used to latch the digital count at the instant when the ramp voltage Vr=Vsig. The digital fixed-offset-corrected pixel output is read out to an image frame store as before.

The operation of the switches used in the various above described embodiments, and the reading and resetting of pixels rows may be controlled in a number of ways. For example, the sequential addressing means used to read and reset the pixels, and/or the switches and/or the output buses may be controlled by dedicated or suitably programmed hardware provided integrally in the image sensor 1, and/or externally of the sensor 1. Alternatively, or additionally, a microprocessor unit programmed with dedicated software could be used to control the components of the image sensor.

It will be appreciated that the present invention is also applicable for use with photogate type pixel arrays.

However, due to the inherently different natures of photodiode and photogate-type pixels the above described procedures for carrying out the fixed offset correction will be modified slightly for use with photogate pixel arrays. For example, in the embodiment of FIG. 2, instead of first storing on C1 the combined output signal from the pixel 2 and then opening switch S2 and resetting the pixel, the reverse procedure is applied i.e. the pixel is reset and the reset signal stored on C1, then switch S2 is opened and the combined output signal from the pixel flows to C1, so that the potential on mode 13 of C2 changes by:

Vsig.(C1/(C1+C2 )),

as before.

Similar modifications to the error-correction techniques applied using the circuits of FIGS. 3, 4 and 5 would allow these circuits to be applied with photogate-type pixel arrays.

Claims (5)

We claim:
1. An integrated circuit active pixel image sensor comprising an array of active pixels arranged in rows and columns, and pixel read and reset means for reading and resetting said pixels row by row, wherein in each said pixel column there is provided: first capacitor means having a pair of terminals and being selectively connectable to each pixel in said column for storing a combined pixel output comprising an image signal and a fixed offset signal, from a nominated pixel in said column and a nominated one of said rows; second capacitor means having a pair of terminals and also being selectively connectable to each pixel in said column, for storing a further signal obtained when said second capacitor means is connected to said nominated pixel and said nominated pixel is reset; first voltage reference input means via which a constant reference voltage may be applied to one terminal of said first capacitor means while said combined pixel output signal is stored on said first capacitor means; second voltage reference input means via which a constant reference voltage may be applied to one terminal of said second capacitor means while said further signal is stored on said second capacitor means; and comparator means for comparing said signals stored on said first and second capacitor means; and wherein the sensor further includes: a ramp voltage source which is selectively connectable to at least one of the terminals of said first and second capacitor means of each said pixel column; a latch means in each said column connected to an output terminal of the comparator means in said column, for detecting a change in polarity in an output from said comparator means; and digital count broadcasting means adapted to broadcast to each of said columns of the pixel array, simultaneously with said ramp voltage source, a digital count signal corresponding to an analog voltage produced by said ramp voltage source, each said latch means being adapted to latch said digital count signal at a switching point of the respective said comparator output so as to obtain a digitized fixed-offset-corrected pixel output signal for said nominated pixel in the respective column.
2. An integrated circuit active pixel image sensor according to claim 1, wherein said first and second capacitor means are each selectively connectable to said pixel by a respective switch means provided therefor.
3. An integrated circuit active pixel image sensor according to claim 1, further comprising at least one constant reference voltage source selectively connectable to said first and second voltage reference input means of said pixel columns.
4. An integrated circuit active pixel image sensor according to claim 1 wherein said active pixels are of photodiode type.
5. A fixed offset cancellation method for an integrated circuit active pixel image sensor having an array of active pixels arranged in rows and columns, the method comprising sequentially, for each row of pixels in the array, carrying out the steps of:
(a) storing, in each said column of the array, a combined pixel output signal comprising an image signal and a fixed offset signal read from said respective pixel in said row;
(b) storing, in each said column, a further signal obtained when each said respective pixel in said row is reset:
(c) using comparator means and latch means provided in each said column, together with a ramp voltage source and digital count broadcasting means provided in the integrated circuit active pixel image sensor, to obtain a digitized fixed-offset-corrected pixel output signal for each said pixel in the row; and
(d) scanning out said fixed-offset-corrected pixel output signals directly from the image sensor.
US08/749,056 1996-09-12 1996-11-14 Offset noise cancellation in array image sensors Expired - Lifetime US6067113A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB9619088.9A GB9619088D0 (en) 1996-09-12 1996-09-12 Ofset cancellation in array image sensors
GB9619088 1996-09-12

Publications (1)

Publication Number Publication Date
US6067113A true US6067113A (en) 2000-05-23

Family

ID=10799846

Family Applications (1)

Application Number Title Priority Date Filing Date
US08/749,056 Expired - Lifetime US6067113A (en) 1996-09-12 1996-11-14 Offset noise cancellation in array image sensors

Country Status (2)

Country Link
US (1) US6067113A (en)
GB (3) GB9619088D0 (en)

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010045580A1 (en) * 1998-07-28 2001-11-29 Pierrick Descure Image sensor with a photodiode array
US20020067415A1 (en) * 2000-06-28 2002-06-06 Stmicroelectronics Ltd Image sensors with multiple integration/read cycles
US6404854B1 (en) * 2000-06-26 2002-06-11 Afp Imaging Corporation Dental x-ray imaging system
US6417504B1 (en) * 2000-09-29 2002-07-09 Innovative Technology Licensing, Llc Compact ultra-low noise high-bandwidth pixel amplifier for single-photon readout of photodetectors
US6417882B1 (en) * 1997-05-06 2002-07-09 Texas Instruments Incorporated CMOS sensor camera with on-chip image compression
EP1221813A2 (en) * 2000-11-15 2002-07-10 Pixim, Inc. Sense amplifier having a precision analog reference level for use with image sensors
US20020100862A1 (en) * 2001-01-29 2002-08-01 Valley Oak Semiconductor, Inc. Multiplexed and pipelined column buffer for use with an array of photo sensors
US6449014B1 (en) * 1997-03-03 2002-09-10 Nissan Motor Co., Ltd. Image sensor having a low impedance reading block between pixel data lines and output line
US20020130273A1 (en) * 2001-03-19 2002-09-19 Gordon Gary B. Impedance sensing screen pointing device
US6473124B1 (en) * 1998-04-23 2002-10-29 Micron Technology, Inc. RAM line storage for fixed pattern noise correction
US20020166951A1 (en) * 2001-05-09 2002-11-14 Yvon Cazaux CMOS-type photodetector
US20020167611A1 (en) * 2001-03-26 2002-11-14 Photon Vision Systems, Inc. Image sensor ADC and CDS per column
US20030076740A1 (en) * 2001-09-07 2003-04-24 Calvert Rodney William Seismic imaging a subsurface formation
US20030106989A1 (en) * 2001-12-11 2003-06-12 Sick Ag Evaluation circuit and a signal processing method
US20030214597A1 (en) * 2002-05-14 2003-11-20 Jung-Hyun Nam Image sensors including offset adjustment and related methods
US6657662B1 (en) * 1999-09-03 2003-12-02 Xerox Corporation System for resetting the video offset from dark photosensors in an image sensor array
US6660989B2 (en) * 2001-07-11 2003-12-09 Texas Instruments Incorporated CMOS imager having asynchronous pixel readout in order of pixel illumination
US20030227040A1 (en) * 2002-04-02 2003-12-11 Stmicroelectronics Ltd Image sensor
US20030231252A1 (en) * 2001-12-19 2003-12-18 Stmicroelectronics Ltd Image sensor with improved noise cancellation
US6667767B1 (en) * 1998-07-29 2003-12-23 Nec Electronics Corporation Image sensor for offsetting threshold voltage of a transistor in a source follower
US6677656B2 (en) 2001-02-12 2004-01-13 Stmicroelectronics S.A. High-capacitance photodiode
US6781169B2 (en) 2001-02-12 2004-08-24 Stmicroelectronics S.A. Photodetector with three transistors
US20040165093A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
US6803952B1 (en) * 1999-03-31 2004-10-12 Sharp Kabushiki Kaisha Signal readout circuit of an amplification type solid-state imaging device
US20040263656A1 (en) * 2003-04-30 2004-12-30 Stmicroelectronics S.A. Process for sampling the signal delivered by an active pixel of an image sensor, and corresponding sensor
US20050032281A1 (en) * 2003-08-07 2005-02-10 Mcclure Brent A. Imager photo diode capacitor structure with reduced process variation sensitivity
US20050040318A1 (en) * 2003-08-19 2005-02-24 Atsushi Ooshima Solid-state imaging device
US20050116700A1 (en) * 2002-10-22 2005-06-02 Masami Yakabe Potential fixing device, potential fixing method, and capacitance mearuing instrument
US6903670B1 (en) 2002-10-04 2005-06-07 Smal Camera Technologies Circuit and method for cancellation of column pattern noise in CMOS imagers
US20050174454A1 (en) * 2004-02-11 2005-08-11 Jung-Chak Ahn Sub-sampling with higher display quality in image-sensing device
US20050195304A1 (en) * 2004-02-23 2005-09-08 Yoshikazu Nitta Solid-state image pickup device and method for driving the same
US20050206752A1 (en) * 2004-03-16 2005-09-22 Samsung Electronics Co., Ltd. Method and circuit for performing correlated double sub-sampling (CDSS) of pixels in an active pixel sensor (APS) array
US6950131B1 (en) * 2000-09-26 2005-09-27 Valley Oak Semiconductor Simultaneous access and reset system for an active pixel sensor
US20050253945A1 (en) * 2004-05-13 2005-11-17 Canon Kabushiki Kaisha Solid-state image pickup device and camera using the same solid-state image pickup device
US20060192870A1 (en) * 2005-02-15 2006-08-31 Sharp Kabushiki Kaisha Solid-state imaging device and driving method therefor
US20070188640A1 (en) * 2006-02-15 2007-08-16 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
US7286174B1 (en) 2001-06-05 2007-10-23 Dalsa, Inc. Dual storage node pixel for CMOS sensor
US20080074521A1 (en) * 2006-08-30 2008-03-27 Alf Olsen Amplifier offset cancellation devices, systems, and methods
US20080225140A1 (en) * 2007-03-16 2008-09-18 Stmicroelectronics (Research & Development) Limited Image sensors
US20090072699A1 (en) * 2007-09-13 2009-03-19 Youn Hae-Su Cathode ray tube with improved mask assembly
US20090273691A1 (en) * 2008-05-02 2009-11-05 Yaowu Mo Method and apparatus providing analog row noise correction and hot pixel filtering
US20090309991A1 (en) * 2008-06-11 2009-12-17 Yong Lim Pseudo-digital average sub sampling method and apparatus
CN100594709C (en) 2004-03-16 2010-03-17 三星电子株式会社 Method and circuit for performing correlated double sub-sampling (CDSS) of pixels in an active pixel sensor (APS) array
US7944020B1 (en) 2006-12-22 2011-05-17 Cypress Semiconductor Corporation Reverse MIM capacitor
WO2012000079A1 (en) * 2010-06-29 2012-01-05 Excelitas Canada Inc. Multiplexed sensor array
US20120049042A1 (en) * 2010-08-31 2012-03-01 Samsung Electronics Co., Ltd. Pixel Array, Read Out Circuit Therefor, Read Out Architecture Associated Therewith, Image Sensor And System Including The Same
US20120181589A1 (en) * 2009-10-20 2012-07-19 Semiconductor Manufacturing International (Shanghai) Corporation Cmos image sensor with non-contact structure
US8397992B2 (en) 1994-03-04 2013-03-19 Hand Held Products, Inc. Optical reader having image sensor for reading decodable indicia
KR101450718B1 (en) 2007-03-12 2014-10-16 소니 주식회사 Data processing method, data processing device, solid-state imaging device, imaging apparatus, and electronic device
US20150189203A1 (en) * 2013-12-26 2015-07-02 Canon Kabushiki Kaisha Solid state imaging device and method of driving solid state imaging device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4154268B2 (en) * 2003-03-27 2008-09-24 キヤノン株式会社 Imaging device

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942474A (en) * 1987-12-11 1990-07-17 Hitachi, Ltd. Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity
US4987321A (en) * 1989-09-25 1991-01-22 Eastman Kodak Company Processing circuit for image sensor
US5187583A (en) * 1990-10-17 1993-02-16 Sony Corporation Solid state imager which reduces the noise and improves the sensitivity
US5296696A (en) * 1992-01-29 1994-03-22 Olympus Optical Co., Ltd. Solid state image pickup apparatus and driving method
EP0617552A2 (en) * 1993-03-24 1994-09-28 Sony Corporation Solid-state imaging device
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5488415A (en) * 1993-07-09 1996-01-30 Olympus Optical Co., Ltd. Solid-state image pickup device having a photoelectric conversion detection cell with high sensitivity
US5698844A (en) * 1995-08-02 1997-12-16 Canon Kabushiki Kaisha Solid-state image sensing device and method of controlling the solid-state image sensing device
US5708471A (en) * 1993-03-25 1998-01-13 Nec Corporation Image sensors and driving method thereof
US5717458A (en) * 1994-02-21 1998-02-10 Sony Corporation Solid-state imager having capacitors connected to vertical signal lines and a charge detection circuit

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942474A (en) * 1987-12-11 1990-07-17 Hitachi, Ltd. Solid-state imaging device having photo-electric conversion elements and other circuit elements arranged to provide improved photo-sensitivity
US4987321A (en) * 1989-09-25 1991-01-22 Eastman Kodak Company Processing circuit for image sensor
US5187583A (en) * 1990-10-17 1993-02-16 Sony Corporation Solid state imager which reduces the noise and improves the sensitivity
US5296696A (en) * 1992-01-29 1994-03-22 Olympus Optical Co., Ltd. Solid state image pickup apparatus and driving method
EP0617552A2 (en) * 1993-03-24 1994-09-28 Sony Corporation Solid-state imaging device
US5434619A (en) * 1993-03-24 1995-07-18 Sony Corporation Solid-state imaging device imaging device having noise cancellation and an output pixel signal
US5708471A (en) * 1993-03-25 1998-01-13 Nec Corporation Image sensors and driving method thereof
US5488415A (en) * 1993-07-09 1996-01-30 Olympus Optical Co., Ltd. Solid-state image pickup device having a photoelectric conversion detection cell with high sensitivity
US5471515A (en) * 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5717458A (en) * 1994-02-21 1998-02-10 Sony Corporation Solid-state imager having capacitors connected to vertical signal lines and a charge detection circuit
US5698844A (en) * 1995-08-02 1997-12-16 Canon Kabushiki Kaisha Solid-state image sensing device and method of controlling the solid-state image sensing device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Garverick et al., A 32 Channel Charge readout IC for Programmable, Nonlinear Quantization of Multichannel Detector Data, IEEE Journal of Solid State circuits, vol. 30, No. 5, May 1995, pp. 533 541. *
Garverick et al., A 32-Channel Charge readout IC for Programmable, Nonlinear Quantization of Multichannel Detector Data, IEEE Journal of Solid-State circuits, vol. 30, No. 5, May 1995, pp. 533-541.

Cited By (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8602309B2 (en) 1994-03-04 2013-12-10 Hand Held Products, Inc. Bar code reading device for reading 1D or 2D bar code symbols
US8397992B2 (en) 1994-03-04 2013-03-19 Hand Held Products, Inc. Optical reader having image sensor for reading decodable indicia
US6449014B1 (en) * 1997-03-03 2002-09-10 Nissan Motor Co., Ltd. Image sensor having a low impedance reading block between pixel data lines and output line
US6417882B1 (en) * 1997-05-06 2002-07-09 Texas Instruments Incorporated CMOS sensor camera with on-chip image compression
US6473124B1 (en) * 1998-04-23 2002-10-29 Micron Technology, Inc. RAM line storage for fixed pattern noise correction
US6960799B2 (en) 1998-07-28 2005-11-01 Stmicroelectronics A.A. Image sensor with a photodiode array
US20010045580A1 (en) * 1998-07-28 2001-11-29 Pierrick Descure Image sensor with a photodiode array
US6667767B1 (en) * 1998-07-29 2003-12-23 Nec Electronics Corporation Image sensor for offsetting threshold voltage of a transistor in a source follower
US6803952B1 (en) * 1999-03-31 2004-10-12 Sharp Kabushiki Kaisha Signal readout circuit of an amplification type solid-state imaging device
US6657662B1 (en) * 1999-09-03 2003-12-02 Xerox Corporation System for resetting the video offset from dark photosensors in an image sensor array
US6404854B1 (en) * 2000-06-26 2002-06-11 Afp Imaging Corporation Dental x-ray imaging system
US20020067415A1 (en) * 2000-06-28 2002-06-06 Stmicroelectronics Ltd Image sensors with multiple integration/read cycles
US6950131B1 (en) * 2000-09-26 2005-09-27 Valley Oak Semiconductor Simultaneous access and reset system for an active pixel sensor
US6417504B1 (en) * 2000-09-29 2002-07-09 Innovative Technology Licensing, Llc Compact ultra-low noise high-bandwidth pixel amplifier for single-photon readout of photodetectors
EP1221813A3 (en) * 2000-11-15 2005-07-20 Pixim, Inc. Sense amplifier having a precision analog reference level for use with image sensors
EP1221813A2 (en) * 2000-11-15 2002-07-10 Pixim, Inc. Sense amplifier having a precision analog reference level for use with image sensors
US7154548B2 (en) * 2001-01-29 2006-12-26 Valley Oak Semiconductor Multiplexed and pipelined column buffer for use with an array of photo sensors
US20020100862A1 (en) * 2001-01-29 2002-08-01 Valley Oak Semiconductor, Inc. Multiplexed and pipelined column buffer for use with an array of photo sensors
US6781169B2 (en) 2001-02-12 2004-08-24 Stmicroelectronics S.A. Photodetector with three transistors
US6677656B2 (en) 2001-02-12 2004-01-13 Stmicroelectronics S.A. High-capacitance photodiode
US20020130273A1 (en) * 2001-03-19 2002-09-19 Gordon Gary B. Impedance sensing screen pointing device
US7184026B2 (en) * 2001-03-19 2007-02-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Impedance sensing screen pointing device
US6965407B2 (en) 2001-03-26 2005-11-15 Silicon Video, Inc. Image sensor ADC and CDS per column
US20020167611A1 (en) * 2001-03-26 2002-11-14 Photon Vision Systems, Inc. Image sensor ADC and CDS per column
US20020166951A1 (en) * 2001-05-09 2002-11-14 Yvon Cazaux CMOS-type photodetector
US6984817B2 (en) 2001-05-09 2006-01-10 Stmicroelectronic S.A. CMOS-type photodetector for improved charge transfer from the photodetector to a MOS transistor
US7286174B1 (en) 2001-06-05 2007-10-23 Dalsa, Inc. Dual storage node pixel for CMOS sensor
US20080231737A1 (en) * 2001-06-05 2008-09-25 Weale Gareth P Dual storage node pixel for CMOS sensor
US6660989B2 (en) * 2001-07-11 2003-12-09 Texas Instruments Incorporated CMOS imager having asynchronous pixel readout in order of pixel illumination
US20030076740A1 (en) * 2001-09-07 2003-04-24 Calvert Rodney William Seismic imaging a subsurface formation
US20030106989A1 (en) * 2001-12-11 2003-06-12 Sick Ag Evaluation circuit and a signal processing method
EP1319965A2 (en) * 2001-12-11 2003-06-18 Sick AG Evaluation circuit and signal processing method
EP1319965A3 (en) * 2001-12-11 2004-07-21 Sick AG Evaluation circuit and signal processing method
US6909081B2 (en) 2001-12-11 2005-06-21 Sick Ag Evaluation circuit for processing the output of a light detector
US20030231252A1 (en) * 2001-12-19 2003-12-18 Stmicroelectronics Ltd Image sensor with improved noise cancellation
US20030227040A1 (en) * 2002-04-02 2003-12-11 Stmicroelectronics Ltd Image sensor
US7280140B2 (en) * 2002-04-02 2007-10-09 Stmicroelectronics Ltd. Image sensor reading during reset and reading on release from reset
NL1023152C2 (en) * 2002-05-14 2005-06-16 Samsung Electronics Co Ltd Image sensors with offset adjustment, and related methods.
US20070229126A1 (en) * 2002-05-14 2007-10-04 Samsung Electronics Co., Ltd. Offset Adjustment Methods of Signal Converting Circuits
US20030214597A1 (en) * 2002-05-14 2003-11-20 Jung-Hyun Nam Image sensors including offset adjustment and related methods
US7310452B2 (en) 2002-05-14 2007-12-18 Samsung Electronics Co., Ltd. Offset adjustment methods of signal converting circuits
US7242820B2 (en) 2002-05-14 2007-07-10 Samsung Electronics Co., Ltd. Image sensors including offset adjustment and related methods
FR2839842A1 (en) * 2002-05-14 2003-11-21 Samsung Electronics Co Ltd image sensor, process for capturing an image signal conversion circuit and method for adjusting time lag of such a circuit
US6903670B1 (en) 2002-10-04 2005-06-07 Smal Camera Technologies Circuit and method for cancellation of column pattern noise in CMOS imagers
US20050116700A1 (en) * 2002-10-22 2005-06-02 Masami Yakabe Potential fixing device, potential fixing method, and capacitance mearuing instrument
US7046016B2 (en) * 2002-10-22 2006-05-16 Tokyo Electron Limited Potential fixing device, potential fixing method, and capacitance measuring instrument
US7317484B2 (en) 2003-02-26 2008-01-08 Digital Imaging Systems Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
US20040165093A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Gmbh CMOS APS readout scheme that combines reset drain current and the source follower output
EP1453301A1 (en) * 2003-02-26 2004-09-01 Dialog Semiconductor GmbH CMOS APS readout scheme that combines reset drain current and the source follower output
US20040263656A1 (en) * 2003-04-30 2004-12-30 Stmicroelectronics S.A. Process for sampling the signal delivered by an active pixel of an image sensor, and corresponding sensor
US7008816B2 (en) * 2003-08-07 2006-03-07 Micron Technology, Inc. Imager photo diode capacitor structure with reduced process variation sensitivity
US20050032281A1 (en) * 2003-08-07 2005-02-10 Mcclure Brent A. Imager photo diode capacitor structure with reduced process variation sensitivity
US20050040318A1 (en) * 2003-08-19 2005-02-24 Atsushi Ooshima Solid-state imaging device
US7432964B2 (en) * 2003-08-19 2008-10-07 Sony Corporation Solid-state imaging device with plural CDS circuits per column sharing a capacitor and/or clamping transistor
US7724294B2 (en) * 2004-02-11 2010-05-25 Samsung Electronics Co., Ltd. Sub-sampling with higher display quality in image-sensing device
US20050174454A1 (en) * 2004-02-11 2005-08-11 Jung-Chak Ahn Sub-sampling with higher display quality in image-sensing device
US9769411B2 (en) * 2004-02-23 2017-09-19 Sony Corporation Solid-state image pickup device and method for driving the same in solid-state imaging pickup device and method for driving the same in a number of modes
US8786746B2 (en) * 2004-02-23 2014-07-22 Sony Corporation Solid-state image pickup device and method for driving the same in solid-state imaging pickup device and method for driving the same in a number of modes
US20140285697A1 (en) * 2004-02-23 2014-09-25 Sony Corporation Solid-state image pickup device and method for driving the same
US20100245649A1 (en) * 2004-02-23 2010-09-30 Sony Corporation Solid-state image pickup device and method for driving the same in a number of modes
US20050195304A1 (en) * 2004-02-23 2005-09-08 Yoshikazu Nitta Solid-state image pickup device and method for driving the same
US20090190021A1 (en) * 2004-02-23 2009-07-30 Sony Corporation Solid-state Image Pickup Device Having Analog-Digital Converters Configured To Sum Values Of Multiple Pixels In The Array And Method For Driving The Same
US8553122B2 (en) 2004-02-23 2013-10-08 Sony Corporation Solid-state image pickup device
US20110199526A1 (en) * 2004-02-23 2011-08-18 Sony Corporation Solid-state image pickup device and method for driving the same
US7623173B2 (en) * 2004-02-23 2009-11-24 Sony Corporation Solid-state image pickup device having analog-digital converters configured to sum values of multiple pixels in the array and method for driving the same
US9313435B2 (en) * 2004-02-23 2016-04-12 Sony Corporation Solid-state image pickup device and method for driving the same
US7961238B2 (en) 2004-02-23 2011-06-14 Sony Corporation Solid-state image pickup device and method for driving the same in a number of modes
US7710479B2 (en) 2004-02-23 2010-05-04 Sony Corporation Solid-state image pickup device having analog-digital converters configured to sum values of multiple pixels in the array and method for driving the same
US7554584B2 (en) * 2004-03-16 2009-06-30 Samsung Electronics Co., Ltd. Method and circuit for performing correlated double sub-sampling (CDSS) of pixels in an active pixel sensor (APS) array
CN100594709C (en) 2004-03-16 2010-03-17 三星电子株式会社 Method and circuit for performing correlated double sub-sampling (CDSS) of pixels in an active pixel sensor (APS) array
US20050206752A1 (en) * 2004-03-16 2005-09-22 Samsung Electronics Co., Ltd. Method and circuit for performing correlated double sub-sampling (CDSS) of pixels in an active pixel sensor (APS) array
US7821551B2 (en) * 2004-05-13 2010-10-26 Canon Kabushiki Kaisha Solid-state image pickup device with an analog memory and an offset removing unit
US20050253945A1 (en) * 2004-05-13 2005-11-17 Canon Kabushiki Kaisha Solid-state image pickup device and camera using the same solid-state image pickup device
US20060192870A1 (en) * 2005-02-15 2006-08-31 Sharp Kabushiki Kaisha Solid-state imaging device and driving method therefor
US7652706B2 (en) * 2006-02-15 2010-01-26 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
US20070188640A1 (en) * 2006-02-15 2007-08-16 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
CN101385329B (en) 2006-02-15 2011-11-30 全视技术有限公司 Ramp using the transfer gate clock a / d converter
US7649559B2 (en) 2006-08-30 2010-01-19 Aptina Imaging Corporation Amplifier offset cancellation devices, systems, and methods
US20080074521A1 (en) * 2006-08-30 2008-03-27 Alf Olsen Amplifier offset cancellation devices, systems, and methods
US8607424B1 (en) 2006-12-22 2013-12-17 Cypress Semiconductor Corp. Reverse MIM capacitor
US7944020B1 (en) 2006-12-22 2011-05-17 Cypress Semiconductor Corporation Reverse MIM capacitor
KR101450718B1 (en) 2007-03-12 2014-10-16 소니 주식회사 Data processing method, data processing device, solid-state imaging device, imaging apparatus, and electronic device
US8228410B2 (en) 2007-03-16 2012-07-24 Stmicroelectronics (Research & Development) Limited Image sensors including a shielded photosensitive portion for noise cancellation and associated methods
US20080225140A1 (en) * 2007-03-16 2008-09-18 Stmicroelectronics (Research & Development) Limited Image sensors
US20090072699A1 (en) * 2007-09-13 2009-03-19 Youn Hae-Su Cathode ray tube with improved mask assembly
US8077227B2 (en) 2008-05-02 2011-12-13 Aptina Imaging Corporation Method and apparatus providing analog row noise correction and hot pixel filtering
US20090273691A1 (en) * 2008-05-02 2009-11-05 Yaowu Mo Method and apparatus providing analog row noise correction and hot pixel filtering
US8754956B2 (en) 2008-06-11 2014-06-17 Samsung Electronics Co., Ltd. Pseudo-digital average sub sampling method and apparatus
US8149289B2 (en) 2008-06-11 2012-04-03 Samsung Electronics Co., Ltd. Pseudo-digital average sub sampling method and apparatus
US20090309991A1 (en) * 2008-06-11 2009-12-17 Yong Lim Pseudo-digital average sub sampling method and apparatus
US20120181589A1 (en) * 2009-10-20 2012-07-19 Semiconductor Manufacturing International (Shanghai) Corporation Cmos image sensor with non-contact structure
US8513721B2 (en) * 2009-10-20 2013-08-20 Semiconductor Manufacturing International (Shanghai) Corporation CMOS image sensor with non-contact structure
EP2589034A1 (en) * 2010-06-29 2013-05-08 Excelitas Canada Inc. Multiplexed sensor array
CN102971773A (en) * 2010-06-29 2013-03-13 埃赛力达加拿大有限公司 Multiplexed sensor array
US8320403B2 (en) 2010-06-29 2012-11-27 Excelitas Canada, Inc. Multiplexed sensor array
EP2589034A4 (en) * 2010-06-29 2015-05-27 Excelitas Technologies Singapore Pte Ltd Multiplexed sensor array
WO2012000079A1 (en) * 2010-06-29 2012-01-05 Excelitas Canada Inc. Multiplexed sensor array
US20120049042A1 (en) * 2010-08-31 2012-03-01 Samsung Electronics Co., Ltd. Pixel Array, Read Out Circuit Therefor, Read Out Architecture Associated Therewith, Image Sensor And System Including The Same
US20150189203A1 (en) * 2013-12-26 2015-07-02 Canon Kabushiki Kaisha Solid state imaging device and method of driving solid state imaging device
US9838631B2 (en) * 2013-12-26 2017-12-05 Canon Kabushiki Kaisha Solid state imaging device and method of driving solid state imaging device

Also Published As

Publication number Publication date
GB2317526A (en) 1998-03-25
GB9719313D0 (en) 1997-11-12
GB9619088D0 (en) 1996-10-23
GB2317526B (en) 2000-10-04
GB9719539D0 (en) 1997-11-19

Similar Documents

Publication Publication Date Title
US6650369B2 (en) Image sensing apparatus, signal detection apparatus, and signal accumulation apparatus
US7315273B2 (en) Analog-to-digital conversion method, analog-to-digital converter, semiconductor device for detecting distribution of physical quantity, and electronic apparatus
US6483541B1 (en) Solid state imaging device, signal processing method and driving method therefor and camera
US6721008B2 (en) Integrated CMOS active pixel digital camera
US5965871A (en) Column readout multiplexer for CMOS image sensors with multiple readout and fixed pattern noise cancellation
EP0458030B1 (en) Defect correction for CCD and CID imagers
US6091449A (en) MOS-type solid-state imaging apparatus
US6552745B1 (en) CMOS active pixel with memory for imaging sensors
US8089530B2 (en) Solid-state image pickup apparatus, drive method for the solid-state image pickup apparatus, and image pickup apparatus
US5153421A (en) Architecture for analog and digital image sensor arrays
US4602291A (en) Pixel non-uniformity correction system
US6750437B2 (en) Image pickup apparatus that suitably adjusts a focus
US7999866B2 (en) Imaging apparatus and processing method thereof
KR100579685B1 (en) Solid-state image sensor and method of driving same
KR101000627B1 (en) Method of controlling semiconductor device, signal processing method, semiconductor device, and electronic apparatus
US9485447B2 (en) Reduced size image pickup apparatus retaining image quality
JP5105832B2 (en) Signal generator and a signal generating method for generating a signal for reducing the noise in the signal
EP0845900A1 (en) Image system, solid-state imaging device semiconductor integrated circuit, and differential output method used in the system
US5331421A (en) Solid state image pickup apparatus
KR100399954B1 (en) Comparator performing analog correlated double sample for cmos image sensor
EP1082849B1 (en) Extended dynamic range image sensor system
US20010026321A1 (en) Amplification type solid-state imaging device having a potential detecting circuit for each unit cell and high-speed readout method thereof
EP1187217A2 (en) Solid-state image sensing device
US6930722B1 (en) Amplification type image pickup apparatus and method of controlling the amplification type image pickup apparatus
DE69831071T2 (en) CMOS image sensor with improved fill factor

Legal Events

Date Code Title Description
AS Assignment

Owner name: VLSI VISION LIMITED, UNITED KINGDOM

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:HURWITZ, JONATHAN E.D.;DENYER, PETER B.;REEL/FRAME:008314/0689

Effective date: 19961104

STCF Information on status: patent grant

Free format text: PATENTED CASE

CC Certificate of correction
FPAY Fee payment

Year of fee payment: 4

SULP Surcharge for late payment
FPAY Fee payment

Year of fee payment: 8

FPAY Fee payment

Year of fee payment: 12