CN1689164A - 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps - Google Patents
具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps Download PDFInfo
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- CN1689164A CN1689164A CNA038246252A CN03824625A CN1689164A CN 1689164 A CN1689164 A CN 1689164A CN A038246252 A CNA038246252 A CN A038246252A CN 03824625 A CN03824625 A CN 03824625A CN 1689164 A CN1689164 A CN 1689164A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
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- H—ELECTRICITY
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- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
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- Signal Processing (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (65)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/226,326 | 2002-08-23 | ||
US10/226,326 US6821808B2 (en) | 2002-08-23 | 2002-08-23 | CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
US10/226,190 | 2002-08-23 | ||
US10/226,190 US7372495B2 (en) | 2002-08-23 | 2002-08-23 | CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101094617A Division CN101309351A (zh) | 2002-08-23 | 2003-08-22 | 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1689164A true CN1689164A (zh) | 2005-10-26 |
CN100499145C CN100499145C (zh) | 2009-06-10 |
Family
ID=31949786
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101094617A Pending CN101309351A (zh) | 2002-08-23 | 2003-08-22 | 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps |
CNB038246252A Expired - Fee Related CN100499145C (zh) | 2002-08-23 | 2003-08-22 | 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101094617A Pending CN101309351A (zh) | 2002-08-23 | 2003-08-22 | 具有层叠式雪崩倍增层和低电压读出电子电路的cmos aps |
Country Status (9)
Country | Link |
---|---|
US (5) | US7372495B2 (zh) |
EP (1) | EP1547152B1 (zh) |
JP (1) | JP2005536930A (zh) |
KR (1) | KR100681097B1 (zh) |
CN (2) | CN101309351A (zh) |
AT (1) | ATE428185T1 (zh) |
AU (1) | AU2003272232A1 (zh) |
DE (1) | DE60327087D1 (zh) |
WO (1) | WO2004019609A2 (zh) |
Cited By (7)
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CN101385329B (zh) * | 2006-02-15 | 2011-11-30 | 全视技术有限公司 | 使用斜变转移栅极时钟的a/d转换器 |
CN103686006A (zh) * | 2013-12-24 | 2014-03-26 | 北京交通大学 | 一种基于压缩传感的全局式曝光cmos图像传感器 |
CN104103655A (zh) * | 2013-04-01 | 2014-10-15 | 全视科技有限公司 | 具有经偏压深沟槽隔离的增强型光子检测装置 |
CN110160647A (zh) * | 2019-06-20 | 2019-08-23 | 京东方科技集团股份有限公司 | 光强检测电路、光强检测方法和显示装置 |
CN111263089A (zh) * | 2020-05-06 | 2020-06-09 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
CN114613328A (zh) * | 2016-04-15 | 2022-06-10 | 三星显示有限公司 | 像素电路 |
CN115280519A (zh) * | 2020-03-24 | 2022-11-01 | 索尼半导体解决方案公司 | 光接收装置和测距装置 |
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US6791378B2 (en) * | 2002-08-19 | 2004-09-14 | Micron Technology, Inc. | Charge recycling amplifier for a high dynamic range CMOS imager |
US7372495B2 (en) | 2002-08-23 | 2008-05-13 | Micron Technology, Inc. | CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics |
US6780666B1 (en) * | 2003-08-07 | 2004-08-24 | Micron Technology, Inc. | Imager photo diode capacitor structure with reduced process variation sensitivity |
JP2005183538A (ja) * | 2003-12-17 | 2005-07-07 | Sumitomo Electric Ind Ltd | 受光素子及び光受信器 |
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JP4556722B2 (ja) | 2004-05-31 | 2010-10-06 | コニカミノルタホールディングス株式会社 | 撮像装置 |
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-
2002
- 2002-08-23 US US10/226,190 patent/US7372495B2/en active Active
- 2002-08-23 US US10/226,326 patent/US6821808B2/en not_active Expired - Lifetime
-
2003
- 2003-08-22 JP JP2004529806A patent/JP2005536930A/ja active Pending
- 2003-08-22 CN CNA2008101094617A patent/CN101309351A/zh active Pending
- 2003-08-22 CN CNB038246252A patent/CN100499145C/zh not_active Expired - Fee Related
- 2003-08-22 EP EP03754405A patent/EP1547152B1/en not_active Expired - Lifetime
- 2003-08-22 WO PCT/US2003/026253 patent/WO2004019609A2/en active Application Filing
- 2003-08-22 AU AU2003272232A patent/AU2003272232A1/en not_active Abandoned
- 2003-08-22 KR KR1020057003103A patent/KR100681097B1/ko active IP Right Grant
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101385329B (zh) * | 2006-02-15 | 2011-11-30 | 全视技术有限公司 | 使用斜变转移栅极时钟的a/d转换器 |
CN104103655A (zh) * | 2013-04-01 | 2014-10-15 | 全视科技有限公司 | 具有经偏压深沟槽隔离的增强型光子检测装置 |
CN104103655B (zh) * | 2013-04-01 | 2017-04-12 | 豪威科技股份有限公司 | 具有经偏压深沟槽隔离的增强型光子检测装置 |
CN103686006A (zh) * | 2013-12-24 | 2014-03-26 | 北京交通大学 | 一种基于压缩传感的全局式曝光cmos图像传感器 |
CN114613328A (zh) * | 2016-04-15 | 2022-06-10 | 三星显示有限公司 | 像素电路 |
US11984077B2 (en) | 2016-04-15 | 2024-05-14 | Samsung Display Co., Ltd. | Pixel circuit and method of driving the same |
CN110160647A (zh) * | 2019-06-20 | 2019-08-23 | 京东方科技集团股份有限公司 | 光强检测电路、光强检测方法和显示装置 |
CN110160647B (zh) * | 2019-06-20 | 2022-07-05 | 京东方科技集团股份有限公司 | 光强检测电路、光强检测方法和显示装置 |
CN115280519A (zh) * | 2020-03-24 | 2022-11-01 | 索尼半导体解决方案公司 | 光接收装置和测距装置 |
CN111263089A (zh) * | 2020-05-06 | 2020-06-09 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
Also Published As
Publication number | Publication date |
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WO2004019609A2 (en) | 2004-03-04 |
US20040036786A1 (en) | 2004-02-26 |
US20080225133A1 (en) | 2008-09-18 |
AU2003272232A8 (en) | 2004-03-11 |
WO2004019609A3 (en) | 2004-05-13 |
JP2005536930A (ja) | 2005-12-02 |
DE60327087D1 (de) | 2009-05-20 |
US7880791B2 (en) | 2011-02-01 |
US20060187330A1 (en) | 2006-08-24 |
EP1547152B1 (en) | 2009-04-08 |
CN101309351A (zh) | 2008-11-19 |
ATE428185T1 (de) | 2009-04-15 |
US6821808B2 (en) | 2004-11-23 |
KR100681097B1 (ko) | 2007-02-08 |
US7372495B2 (en) | 2008-05-13 |
AU2003272232A1 (en) | 2004-03-11 |
US20040046101A1 (en) | 2004-03-11 |
EP1547152A2 (en) | 2005-06-29 |
KR20050083654A (ko) | 2005-08-26 |
US7365773B2 (en) | 2008-04-29 |
CN100499145C (zh) | 2009-06-10 |
US20090200455A1 (en) | 2009-08-13 |
US7525588B2 (en) | 2009-04-28 |
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