ATE428185T1 - Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung - Google Patents

Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung

Info

Publication number
ATE428185T1
ATE428185T1 AT03754405T AT03754405T ATE428185T1 AT E428185 T1 ATE428185 T1 AT E428185T1 AT 03754405 T AT03754405 T AT 03754405T AT 03754405 T AT03754405 T AT 03754405T AT E428185 T1 ATE428185 T1 AT E428185T1
Authority
AT
Austria
Prior art keywords
low voltage
readout circuit
avalanche layer
protection circuit
cmos aps
Prior art date
Application number
AT03754405T
Other languages
English (en)
Inventor
Isao Takayanagi
Junichi Makamura
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE428185T1 publication Critical patent/ATE428185T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT03754405T 2002-08-23 2003-08-22 Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung ATE428185T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/226,190 US7372495B2 (en) 2002-08-23 2002-08-23 CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics
US10/226,326 US6821808B2 (en) 2002-08-23 2002-08-23 CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics

Publications (1)

Publication Number Publication Date
ATE428185T1 true ATE428185T1 (de) 2009-04-15

Family

ID=31949786

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03754405T ATE428185T1 (de) 2002-08-23 2003-08-22 Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung

Country Status (9)

Country Link
US (5) US6821808B2 (de)
EP (1) EP1547152B1 (de)
JP (1) JP2005536930A (de)
KR (1) KR100681097B1 (de)
CN (2) CN100499145C (de)
AT (1) ATE428185T1 (de)
AU (1) AU2003272232A1 (de)
DE (1) DE60327087D1 (de)
WO (1) WO2004019609A2 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6791378B2 (en) * 2002-08-19 2004-09-14 Micron Technology, Inc. Charge recycling amplifier for a high dynamic range CMOS imager
US6821808B2 (en) * 2002-08-23 2004-11-23 Micron Technology, Inc. CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics
US6780666B1 (en) * 2003-08-07 2004-08-24 Micron Technology, Inc. Imager photo diode capacitor structure with reduced process variation sensitivity
JP2005183538A (ja) * 2003-12-17 2005-07-07 Sumitomo Electric Ind Ltd 受光素子及び光受信器
US7383307B2 (en) * 2004-01-07 2008-06-03 International Business Machines Corporation Instant messaging windowing for topic threads
JP4556722B2 (ja) * 2004-05-31 2010-10-06 コニカミノルタホールディングス株式会社 撮像装置
JP2005348005A (ja) * 2004-06-02 2005-12-15 Konica Minolta Holdings Inc 撮像装置、撮像システム及び撮像システム動作プログラム
US8035142B2 (en) * 2004-07-08 2011-10-11 Micron Technology, Inc. Deuterated structures for image sensors and methods for forming the same
US7309878B1 (en) * 2004-07-26 2007-12-18 U.S. Department Of Energy 3-D readout-electronics packaging for high-bandwidth massively paralleled imager
US7233051B2 (en) * 2005-06-28 2007-06-19 Intel Corporation Germanium/silicon avalanche photodetector with separate absorption and multiplication regions
US7508434B2 (en) * 2005-06-28 2009-03-24 Motorola, Inc. Image sensor architecture employing one or more floating gate devices
JP4212623B2 (ja) * 2006-01-31 2009-01-21 三洋電機株式会社 撮像装置
US7652706B2 (en) * 2006-02-15 2010-01-26 Eastman Kodak Company Pixel analog-to-digital converter using a ramped transfer gate clock
KR100789364B1 (ko) * 2006-08-07 2007-12-28 연세대학교 산학협력단 Ｃｍｏｓ 기반 광전 주파수 변환 장치
KR100879386B1 (ko) * 2006-11-13 2009-01-20 삼성전자주식회사 씨모스 이미지 센서 및 그것을 포함하는 디지털 카메라그리고 씨모스 이미지 센서의 영상 신호 검출 방법
US7923800B2 (en) * 2006-12-27 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US7547889B2 (en) * 2007-03-16 2009-06-16 Csem Centre Suisse D'electronique Et De Microtechnique Sa Photon detection device
US7755685B2 (en) * 2007-09-28 2010-07-13 Sarnoff Corporation Electron multiplication CMOS imager
FR2924862B1 (fr) 2007-12-10 2010-08-13 Commissariat Energie Atomique Dispositif microelectronique photosensible avec multiplicateurs par avalanche
US20110278435A1 (en) * 2009-01-09 2011-11-17 Pioneer Corporation Image sensor apparatus
JP4835710B2 (ja) * 2009-03-17 2011-12-14 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器
CN102804753B (zh) * 2009-06-22 2016-11-09 皇家飞利浦电子股份有限公司 用于x射线传感器的处理电路
KR101605831B1 (ko) * 2009-08-24 2016-03-24 삼성전자주식회사 씨모스 이미지 센서 및 그것의 영상 신호 검출 방법
JP2011071482A (ja) 2009-08-28 2011-04-07 Fujifilm Corp 固体撮像装置，固体撮像装置の製造方法，デジタルスチルカメラ，デジタルビデオカメラ，携帯電話，内視鏡
JP5409291B2 (ja) * 2009-11-19 2014-02-05 富士フイルム株式会社 固体撮像素子、撮像装置
US8817173B2 (en) * 2010-02-01 2014-08-26 Olympus Imaging Corp. Photographing apparatus capable of flash emission
US8203638B2 (en) * 2010-04-30 2012-06-19 Truesense Imaging, Inc. Electronic shutter control in image sensors
US8199238B2 (en) 2010-04-30 2012-06-12 Truesense Imaging, Inc. Electronic shutter control in image sensors
US8184187B2 (en) * 2010-04-30 2012-05-22 Truesense Imaging, Inc. Controlling electronic shutter in image sensors
US8184186B2 (en) * 2010-04-30 2012-05-22 Truesense Imaging, Inc. Electronic shutter control in image sensors
JP5542091B2 (ja) * 2010-05-18 2014-07-09 富士フイルム株式会社 固体撮像素子及び撮像装置
DE102010027128A1 (de) * 2010-07-14 2012-01-19 Pnsensor Gmbh Halbleiterbauelement, insbesondere Strahlungsdetektor, mit einem integrierten Überspannungsschutz
US8390712B2 (en) 2010-12-08 2013-03-05 Aptina Imaging Corporation Image sensing pixels with feedback loops for imaging systems
US9490385B2 (en) * 2012-05-29 2016-11-08 Hewlett Packard Enterprise Development Lp Devices including independently controllable absorption region and multiplication region electric fields
US9219449B2 (en) * 2012-07-24 2015-12-22 Forza Silicon Corporation CTIA for IR readout integrated circuits using single ended OPAMP with in-pixel voltage regulator
US10009565B2 (en) 2012-08-23 2018-06-26 Sony Corporation Current/voltage conversion circuit and imaging apparatus
US9160949B2 (en) * 2013-04-01 2015-10-13 Omnivision Technologies, Inc. Enhanced photon detection device with biased deep trench isolation
US11064142B1 (en) * 2013-09-11 2021-07-13 Varex Imaging Corporation Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method
CN103686006B (zh) * 2013-12-24 2017-04-05 北京交通大学 一种基于压缩传感的全局式曝光cmos图像传感器
US9380229B2 (en) * 2014-02-28 2016-06-28 Samsung Electronics Co., Ltd. Digital imaging systems including image sensors having logarithmic response ranges and methods of determining motion
WO2016145127A1 (en) * 2015-03-09 2016-09-15 California Institute Of Technology Mid-infrared hyperspectral spectroscopy systems and methods thereof
JP6587123B2 (ja) * 2015-06-08 2019-10-09 パナソニックＩｐマネジメント株式会社 撮像装置
US10677942B2 (en) * 2016-02-01 2020-06-09 Shenzhen Xpectvision Technology Co., Ltd. X-ray detectors capable of managing charge sharing
JP6922889B2 (ja) * 2016-03-04 2021-08-18 ソニーグループ株式会社 固体撮像素子、駆動方法、および電子機器
CN107195645B (zh) * 2016-03-14 2023-10-03 松下知识产权经营株式会社 摄像装置
KR102456297B1 (ko) * 2016-04-15 2022-10-20 삼성디스플레이 주식회사 화소 회로 및 이의 구동 방법
DE102016220492A1 (de) * 2016-10-19 2018-04-19 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Ladungslawinen-Photodetektor-System
EP3367562A1 (de) * 2017-02-22 2018-08-29 Comet AG Hochleistungsverstärkerschaltung mit einer rückkopplungsschaltung
CN106950775A (zh) * 2017-05-16 2017-07-14 京东方科技集团股份有限公司 一种阵列基板和显示装置
US10574913B2 (en) * 2017-09-07 2020-02-25 Teledyne Scientific & Imaging, Llc High dynamic range CTIA pixel
WO2020050362A1 (ja) * 2018-09-06 2020-03-12 パナソニックＩｐマネジメント株式会社 固体撮像素子、撮像システム、固体撮像素子の駆動方法、及び光検出器
US10739807B2 (en) 2018-09-11 2020-08-11 Stmicroelectronics (Crolles 2) Sas Body biasing for ultra-low voltage digital circuits
CN110160647B (zh) * 2019-06-20 2022-07-05 京东方科技集团股份有限公司 光强检测电路、光强检测方法和显示装置
US10892757B1 (en) 2019-11-25 2021-01-12 Stmicroelectronics (Research & Development) Limited Reverse body biasing of a transistor using a photovoltaic source
KR20220156541A (ko) * 2020-03-24 2022-11-25 소니 세미컨덕터 솔루션즈 가부시키가이샤 수광 장치 및 측거 장치
CN111263089B (zh) * 2020-05-06 2020-10-16 深圳市汇顶科技股份有限公司 像素、图像传感器及电子装置
US11570391B2 (en) * 2020-12-15 2023-01-31 Sony Semiconductor Solutions Corporation Digitally-calibrated CTIA image sensor pixel
WO2022179929A1 (en) * 2021-02-26 2022-09-01 Sony Semiconductor Solutions Corporation Pixel substrate and light receiving apparatus
JP7694207B2 (ja) * 2021-07-01 2025-06-18 富士通株式会社 アレイセンサ保護回路、及びアレイセンサ
US12520598B2 (en) * 2022-03-22 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Protection diode structure for stacked image sensor devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4973833A (en) 1988-09-28 1990-11-27 Minolta Camera Kabushiki Kaisha Image sensor including logarithmic converters
JPH03272180A (ja) * 1990-03-22 1991-12-03 Toshiba Corp 半導体集積回路
DE69229590T2 (de) * 1991-11-08 2000-03-30 Canon K.K., Tokio/Tokyo Schichtförmiger Festkörperbildsensor und Verfahren zu seiner Herstellung
JP3318774B2 (ja) 1992-06-29 2002-08-26 ソニー株式会社 半導体装置および固体撮像装置
US5619040A (en) * 1994-03-29 1997-04-08 Shapiro; Stephen L. Data acquisition system
GB2289983B (en) * 1994-06-01 1996-10-16 Simage Oy Imaging devices,systems and methods
JP2576433B2 (ja) * 1994-12-14 1997-01-29 日本電気株式会社 半導体装置用保護回路
US5892222A (en) * 1996-04-18 1999-04-06 Loral Fairchild Corporation Broadband multicolor photon counter for low light detection and imaging
US5818052A (en) * 1996-04-18 1998-10-06 Loral Fairchild Corp. Low light level solid state image sensor
US6518962B2 (en) * 1997-03-12 2003-02-11 Seiko Epson Corporation Pixel circuit display apparatus and electronic apparatus equipped with current driving type light-emitting device
US6369853B1 (en) * 1997-11-13 2002-04-09 Foveon, Inc. Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications
JP2001024209A (ja) 1999-07-07 2001-01-26 Toshiba Corp 放射線撮像装置
JP2001135851A (ja) * 1999-11-05 2001-05-18 Minolta Co Ltd 光電変換素子および固体撮像装置
US6437339B2 (en) * 2000-03-24 2002-08-20 Hologic, Inc. Flat panel x-ray imager with gain layer
US6492655B2 (en) 2000-04-05 2002-12-10 Fuji Photo Film Co., Ltd. Method and apparatus for reading image information
JP3493405B2 (ja) 2000-08-31 2004-02-03 ミノルタ株式会社 固体撮像装置
TW550944B (en) * 2001-03-09 2003-09-01 Honda Motor Co Ltd Photosensitive circuit
US6821808B2 (en) * 2002-08-23 2004-11-23 Micron Technology, Inc. CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics

Also Published As

Publication number Publication date
CN1689164A (zh) 2005-10-26
EP1547152B1 (de) 2009-04-08
AU2003272232A1 (en) 2004-03-11
US20060187330A1 (en) 2006-08-24
CN101309351A (zh) 2008-11-19
JP2005536930A (ja) 2005-12-02
WO2004019609A2 (en) 2004-03-04
AU2003272232A8 (en) 2004-03-11
KR20050083654A (ko) 2005-08-26
EP1547152A2 (de) 2005-06-29
KR100681097B1 (ko) 2007-02-08
US7880791B2 (en) 2011-02-01
US20090200455A1 (en) 2009-08-13
US7372495B2 (en) 2008-05-13
US20080225133A1 (en) 2008-09-18
WO2004019609A3 (en) 2004-05-13
US7365773B2 (en) 2008-04-29
US7525588B2 (en) 2009-04-28
CN100499145C (zh) 2009-06-10
US20040046101A1 (en) 2004-03-11
DE60327087D1 (de) 2009-05-20
US6821808B2 (en) 2004-11-23
US20040036786A1 (en) 2004-02-26

Similar Documents

Publication Publication Date Title
ATE428185T1 (de) Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung
KR100887887B1 (ko) 이미지센서
GB2465937A (en) Wide dynamic range cmos image sensor
US6730899B1 (en) Reduced dark current for CMOS image sensors
EP1617486A4 (de) Selbstleuchtende einrichtung
US20110025898A1 (en) Cmos active pixel with very high functional dynamics
WO2001065830A3 (en) High-sensitivity storage pixel sensor having auto-exposure detection
WO2004006354A3 (en) Polymeric charge transport compositions and electronic devices made with such compositions
CN108766341B (zh) 像素电路、显示面板、显示设备以及像素电路的控制方法
ATE470240T1 (de) Bildaufnahmevorrichtung mit unterdrückung des dunkelstromes
FR2631167A1 (fr) Circuit integre comportant une protection contre les decharges electrostatiques
DE602004032123D1 (de) Verbesserte abbildungsvorrichtungs-lichtabschirmung
WO2008090497A3 (en) Organic light emitting diode arrangement
JP2019213188A5 (de)
TWI256249B (en) Pumps for CMOS imagers
WO2008011064A3 (en) Ccd with improved substrate voltage setting circuit
TWI487097B (zh) Solid state camera device
DE60023537D1 (de) Aktivmatrix-bildsensor-pixel mit rücksetzelektrode, welche den photoempfindlichen bereich umgibt
FR2805902B1 (fr) Dispositif optoelectronique semiconducteur a fonction de transfert modulable electriquement
FI20045171A0 (fi) Puolijohdekomponentin ohjauskytkentä
ATE535051T1 (de) Integrierte schaltung mit gleichspannungswandler
CN111372015A (zh) 线性-对数响应像素电路和图像传感器
US20080135730A1 (en) Solid state imaging device and output circuit thereof
CN106331539B (zh) 一种图像传感单元电路和具有其的像元
DE60321135D1 (de) Gegenüber grossen spannungsauslenkungen beständige eingangsstufe

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties