ATE428185T1 - Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung - Google Patents
Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltungInfo
- Publication number
- ATE428185T1 ATE428185T1 AT03754405T AT03754405T ATE428185T1 AT E428185 T1 ATE428185 T1 AT E428185T1 AT 03754405 T AT03754405 T AT 03754405T AT 03754405 T AT03754405 T AT 03754405T AT E428185 T1 ATE428185 T1 AT E428185T1
- Authority
- AT
- Austria
- Prior art keywords
- low voltage
- readout circuit
- avalanche layer
- protection circuit
- cmos aps
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/571—Control of the dynamic range involving a non-linear response
- H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N3/00—Scanning details of television systems; Combination thereof with generation of supply voltages
- H04N3/10—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical
- H04N3/14—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices
- H04N3/15—Scanning details of television systems; Combination thereof with generation of supply voltages by means not exclusively optical-mechanical by means of electrically scanned solid-state devices for picture signal generation
- H04N3/155—Control of the image-sensor operation, e.g. image processing within the image-sensor
- H04N3/1568—Control of the image-sensor operation, e.g. image processing within the image-sensor for disturbance correction or prevention within the image-sensor, e.g. biasing, blooming, smearing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/226,326 US6821808B2 (en) | 2002-08-23 | 2002-08-23 | CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
US10/226,190 US7372495B2 (en) | 2002-08-23 | 2002-08-23 | CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE428185T1 true ATE428185T1 (de) | 2009-04-15 |
Family
ID=31949786
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03754405T ATE428185T1 (de) | 2002-08-23 | 2003-08-22 | Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung |
Country Status (9)
Country | Link |
---|---|
US (5) | US6821808B2 (de) |
EP (1) | EP1547152B1 (de) |
JP (1) | JP2005536930A (de) |
KR (1) | KR100681097B1 (de) |
CN (2) | CN101309351A (de) |
AT (1) | ATE428185T1 (de) |
AU (1) | AU2003272232A1 (de) |
DE (1) | DE60327087D1 (de) |
WO (1) | WO2004019609A2 (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6791378B2 (en) * | 2002-08-19 | 2004-09-14 | Micron Technology, Inc. | Charge recycling amplifier for a high dynamic range CMOS imager |
US6821808B2 (en) * | 2002-08-23 | 2004-11-23 | Micron Technology, Inc. | CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
US6780666B1 (en) * | 2003-08-07 | 2004-08-24 | Micron Technology, Inc. | Imager photo diode capacitor structure with reduced process variation sensitivity |
JP2005183538A (ja) * | 2003-12-17 | 2005-07-07 | Sumitomo Electric Ind Ltd | 受光素子及び光受信器 |
US7383307B2 (en) * | 2004-01-07 | 2008-06-03 | International Business Machines Corporation | Instant messaging windowing for topic threads |
JP4556722B2 (ja) | 2004-05-31 | 2010-10-06 | コニカミノルタホールディングス株式会社 | 撮像装置 |
JP2005348005A (ja) * | 2004-06-02 | 2005-12-15 | Konica Minolta Holdings Inc | 撮像装置、撮像システム及び撮像システム動作プログラム |
US8035142B2 (en) * | 2004-07-08 | 2011-10-11 | Micron Technology, Inc. | Deuterated structures for image sensors and methods for forming the same |
US7309878B1 (en) * | 2004-07-26 | 2007-12-18 | U.S. Department Of Energy | 3-D readout-electronics packaging for high-bandwidth massively paralleled imager |
US7233051B2 (en) * | 2005-06-28 | 2007-06-19 | Intel Corporation | Germanium/silicon avalanche photodetector with separate absorption and multiplication regions |
US7508434B2 (en) * | 2005-06-28 | 2009-03-24 | Motorola, Inc. | Image sensor architecture employing one or more floating gate devices |
JP4212623B2 (ja) * | 2006-01-31 | 2009-01-21 | 三洋電機株式会社 | 撮像装置 |
US7652706B2 (en) * | 2006-02-15 | 2010-01-26 | Eastman Kodak Company | Pixel analog-to-digital converter using a ramped transfer gate clock |
KR100789364B1 (ko) | 2006-08-07 | 2007-12-28 | 연세대학교 산학협력단 | Cmos 기반 광전 주파수 변환 장치 |
KR100879386B1 (ko) * | 2006-11-13 | 2009-01-20 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그것을 포함하는 디지털 카메라그리고 씨모스 이미지 센서의 영상 신호 검출 방법 |
US7923800B2 (en) * | 2006-12-27 | 2011-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
US7547889B2 (en) * | 2007-03-16 | 2009-06-16 | Csem Centre Suisse D'electronique Et De Microtechnique Sa | Photon detection device |
US7755685B2 (en) * | 2007-09-28 | 2010-07-13 | Sarnoff Corporation | Electron multiplication CMOS imager |
FR2924862B1 (fr) | 2007-12-10 | 2010-08-13 | Commissariat Energie Atomique | Dispositif microelectronique photosensible avec multiplicateurs par avalanche |
WO2010079613A1 (ja) * | 2009-01-09 | 2010-07-15 | パイオニア株式会社 | 撮像装置 |
JP4835710B2 (ja) * | 2009-03-17 | 2011-12-14 | ソニー株式会社 | 固体撮像装置、固体撮像装置の製造方法、固体撮像装置の駆動方法、及び電子機器 |
WO2010150141A2 (en) * | 2009-06-22 | 2010-12-29 | Koninklijke Philips Electronics N.V. | Processing circuit for an x-ray sensor |
KR101605831B1 (ko) * | 2009-08-24 | 2016-03-24 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그것의 영상 신호 검출 방법 |
JP2011071482A (ja) | 2009-08-28 | 2011-04-07 | Fujifilm Corp | 固体撮像装置,固体撮像装置の製造方法,デジタルスチルカメラ,デジタルビデオカメラ,携帯電話,内視鏡 |
JP5409291B2 (ja) * | 2009-11-19 | 2014-02-05 | 富士フイルム株式会社 | 固体撮像素子、撮像装置 |
US8817173B2 (en) * | 2010-02-01 | 2014-08-26 | Olympus Imaging Corp. | Photographing apparatus capable of flash emission |
US8184187B2 (en) * | 2010-04-30 | 2012-05-22 | Truesense Imaging, Inc. | Controlling electronic shutter in image sensors |
US8199238B2 (en) | 2010-04-30 | 2012-06-12 | Truesense Imaging, Inc. | Electronic shutter control in image sensors |
US8203638B2 (en) * | 2010-04-30 | 2012-06-19 | Truesense Imaging, Inc. | Electronic shutter control in image sensors |
US8184186B2 (en) * | 2010-04-30 | 2012-05-22 | Truesense Imaging, Inc. | Electronic shutter control in image sensors |
JP5542091B2 (ja) * | 2010-05-18 | 2014-07-09 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
DE102010027128A1 (de) * | 2010-07-14 | 2012-01-19 | Pnsensor Gmbh | Halbleiterbauelement, insbesondere Strahlungsdetektor, mit einem integrierten Überspannungsschutz |
US8390712B2 (en) | 2010-12-08 | 2013-03-05 | Aptina Imaging Corporation | Image sensing pixels with feedback loops for imaging systems |
EP2856505B1 (de) * | 2012-05-29 | 2020-11-18 | Hewlett-Packard Enterprise Development LP | Vorrichtungen mit unabhängig steuerbaren elektrischen feldern einer absorptionsregion und multiplikationsregion |
US9219449B2 (en) * | 2012-07-24 | 2015-12-22 | Forza Silicon Corporation | CTIA for IR readout integrated circuits using single ended OPAMP with in-pixel voltage regulator |
WO2014030551A1 (ja) * | 2012-08-23 | 2014-02-27 | ソニー株式会社 | 電流/電圧変換回路及び撮像装置 |
US9160949B2 (en) * | 2013-04-01 | 2015-10-13 | Omnivision Technologies, Inc. | Enhanced photon detection device with biased deep trench isolation |
US11064142B1 (en) * | 2013-09-11 | 2021-07-13 | Varex Imaging Corporation | Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method |
CN103686006B (zh) * | 2013-12-24 | 2017-04-05 | 北京交通大学 | 一种基于压缩传感的全局式曝光cmos图像传感器 |
US9380229B2 (en) * | 2014-02-28 | 2016-06-28 | Samsung Electronics Co., Ltd. | Digital imaging systems including image sensors having logarithmic response ranges and methods of determining motion |
KR20170125389A (ko) * | 2015-03-09 | 2017-11-14 | 캘리포니아 인스티튜트 오브 테크놀로지 | 중적외선 초분광 시스템 및 그 방법 |
JP6587123B2 (ja) * | 2015-06-08 | 2019-10-09 | パナソニックIpマネジメント株式会社 | 撮像装置 |
EP3411733A4 (de) * | 2016-02-01 | 2019-08-28 | Shenzhen Xpectvision Technology Co., Ltd. | Röntgendetektoren mit möglichkeit zur verwaltung von ladungsteilung |
WO2017150240A1 (ja) * | 2016-03-04 | 2017-09-08 | ソニー株式会社 | 固体撮像素子、駆動方法、および電子機器 |
CN107195645B (zh) * | 2016-03-14 | 2023-10-03 | 松下知识产权经营株式会社 | 摄像装置 |
KR102456297B1 (ko) | 2016-04-15 | 2022-10-20 | 삼성디스플레이 주식회사 | 화소 회로 및 이의 구동 방법 |
DE102016220492A1 (de) * | 2016-10-19 | 2018-04-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Ladungslawinen-Photodetektor-System |
EP3367562A1 (de) * | 2017-02-22 | 2018-08-29 | Comet AG | Hochleistungsverstärkerschaltung mit einer rückkopplungsschaltung |
CN106950775A (zh) * | 2017-05-16 | 2017-07-14 | 京东方科技集团股份有限公司 | 一种阵列基板和显示装置 |
US10574913B2 (en) * | 2017-09-07 | 2020-02-25 | Teledyne Scientific & Imaging, Llc | High dynamic range CTIA pixel |
US11290675B2 (en) * | 2018-09-06 | 2022-03-29 | Panasonic Intellectual Property Management Co., Ltd. | Solid-state image sensor and imaging system |
US10739807B2 (en) | 2018-09-11 | 2020-08-11 | Stmicroelectronics (Crolles 2) Sas | Body biasing for ultra-low voltage digital circuits |
CN110160647B (zh) * | 2019-06-20 | 2022-07-05 | 京东方科技集团股份有限公司 | 光强检测电路、光强检测方法和显示装置 |
US10892757B1 (en) | 2019-11-25 | 2021-01-12 | Stmicroelectronics (Research & Development) Limited | Reverse body biasing of a transistor using a photovoltaic source |
TW202141064A (zh) * | 2020-03-24 | 2021-11-01 | 日商索尼半導體解決方案公司 | 受光裝置及測距裝置 |
CN111263089B (zh) * | 2020-05-06 | 2020-10-16 | 深圳市汇顶科技股份有限公司 | 像素、图像传感器及电子装置 |
US11570391B2 (en) * | 2020-12-15 | 2023-01-31 | Sony Semiconductor Solutions Corporation | Digitally-calibrated CTIA image sensor pixel |
CN116868345A (zh) * | 2021-02-26 | 2023-10-10 | 索尼半导体解决方案公司 | 像素衬底和光接收设备 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4973833A (en) * | 1988-09-28 | 1990-11-27 | Minolta Camera Kabushiki Kaisha | Image sensor including logarithmic converters |
JPH03272180A (ja) * | 1990-03-22 | 1991-12-03 | Toshiba Corp | 半導体集積回路 |
JPH05198787A (ja) * | 1991-11-08 | 1993-08-06 | Canon Inc | 固体撮像装置及びその製造方法 |
JP3318774B2 (ja) * | 1992-06-29 | 2002-08-26 | ソニー株式会社 | 半導体装置および固体撮像装置 |
US5619040A (en) * | 1994-03-29 | 1997-04-08 | Shapiro; Stephen L. | Data acquisition system |
GB2289983B (en) | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
JP2576433B2 (ja) * | 1994-12-14 | 1997-01-29 | 日本電気株式会社 | 半導体装置用保護回路 |
US5892222A (en) * | 1996-04-18 | 1999-04-06 | Loral Fairchild Corporation | Broadband multicolor photon counter for low light detection and imaging |
US5818052A (en) | 1996-04-18 | 1998-10-06 | Loral Fairchild Corp. | Low light level solid state image sensor |
WO1998040871A1 (fr) * | 1997-03-12 | 1998-09-17 | Seiko Epson Corporation | Circuit pixel, afficheur, et equipement electronique a dispositif photoemetteur commande par courant |
US6369853B1 (en) * | 1997-11-13 | 2002-04-09 | Foveon, Inc. | Intra-pixel frame storage element, array, and electronic shutter method suitable for electronic still camera applications |
JP2001024209A (ja) | 1999-07-07 | 2001-01-26 | Toshiba Corp | 放射線撮像装置 |
JP2001135851A (ja) * | 1999-11-05 | 2001-05-18 | Minolta Co Ltd | 光電変換素子および固体撮像装置 |
US6437339B2 (en) * | 2000-03-24 | 2002-08-20 | Hologic, Inc. | Flat panel x-ray imager with gain layer |
US6492655B2 (en) * | 2000-04-05 | 2002-12-10 | Fuji Photo Film Co., Ltd. | Method and apparatus for reading image information |
JP3493405B2 (ja) | 2000-08-31 | 2004-02-03 | ミノルタ株式会社 | 固体撮像装置 |
TW550944B (en) * | 2001-03-09 | 2003-09-01 | Honda Motor Co Ltd | Photosensitive circuit |
US6821808B2 (en) * | 2002-08-23 | 2004-11-23 | Micron Technology, Inc. | CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics |
-
2002
- 2002-08-23 US US10/226,326 patent/US6821808B2/en not_active Expired - Lifetime
- 2002-08-23 US US10/226,190 patent/US7372495B2/en not_active Expired - Lifetime
-
2003
- 2003-08-22 CN CNA2008101094617A patent/CN101309351A/zh active Pending
- 2003-08-22 JP JP2004529806A patent/JP2005536930A/ja active Pending
- 2003-08-22 CN CNB038246252A patent/CN100499145C/zh not_active Expired - Fee Related
- 2003-08-22 DE DE60327087T patent/DE60327087D1/de not_active Expired - Lifetime
- 2003-08-22 KR KR1020057003103A patent/KR100681097B1/ko active IP Right Grant
- 2003-08-22 AU AU2003272232A patent/AU2003272232A1/en not_active Abandoned
- 2003-08-22 AT AT03754405T patent/ATE428185T1/de not_active IP Right Cessation
- 2003-08-22 WO PCT/US2003/026253 patent/WO2004019609A2/en active Application Filing
- 2003-08-22 EP EP03754405A patent/EP1547152B1/de not_active Expired - Lifetime
-
2006
- 2006-04-18 US US11/405,621 patent/US7365773B2/en not_active Expired - Lifetime
-
2008
- 2008-04-02 US US12/078,643 patent/US7525588B2/en not_active Expired - Lifetime
-
2009
- 2009-03-25 US US12/411,122 patent/US7880791B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20080225133A1 (en) | 2008-09-18 |
EP1547152A2 (de) | 2005-06-29 |
KR100681097B1 (ko) | 2007-02-08 |
WO2004019609A2 (en) | 2004-03-04 |
US6821808B2 (en) | 2004-11-23 |
US20040046101A1 (en) | 2004-03-11 |
CN100499145C (zh) | 2009-06-10 |
JP2005536930A (ja) | 2005-12-02 |
CN101309351A (zh) | 2008-11-19 |
AU2003272232A1 (en) | 2004-03-11 |
CN1689164A (zh) | 2005-10-26 |
AU2003272232A8 (en) | 2004-03-11 |
US20060187330A1 (en) | 2006-08-24 |
WO2004019609A3 (en) | 2004-05-13 |
KR20050083654A (ko) | 2005-08-26 |
US7365773B2 (en) | 2008-04-29 |
DE60327087D1 (de) | 2009-05-20 |
US7372495B2 (en) | 2008-05-13 |
US7525588B2 (en) | 2009-04-28 |
US20090200455A1 (en) | 2009-08-13 |
EP1547152B1 (de) | 2009-04-08 |
US20040036786A1 (en) | 2004-02-26 |
US7880791B2 (en) | 2011-02-01 |
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