ATE428185T1 - Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung - Google Patents

Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung

Info

Publication number
ATE428185T1
ATE428185T1 AT03754405T AT03754405T ATE428185T1 AT E428185 T1 ATE428185 T1 AT E428185T1 AT 03754405 T AT03754405 T AT 03754405T AT 03754405 T AT03754405 T AT 03754405T AT E428185 T1 ATE428185 T1 AT E428185T1
Authority
AT
Austria
Prior art keywords
low voltage
readout circuit
avalanche layer
protection circuit
cmos aps
Prior art date
Application number
AT03754405T
Other languages
English (en)
Inventor
Isao Takayanagi
Junichi Makamura
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE428185T1 publication Critical patent/ATE428185T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/626—Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Thin Film Transistor (AREA)
AT03754405T 2002-08-23 2003-08-22 Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung ATE428185T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/226,326 US6821808B2 (en) 2002-08-23 2002-08-23 CMOS APS with stacked avalanche multiplication layer which provides linear and logarithmic photo-conversion characteristics
US10/226,190 US7372495B2 (en) 2002-08-23 2002-08-23 CMOS aps with stacked avalanche multiplication layer and low voltage readout electronics

Publications (1)

Publication Number Publication Date
ATE428185T1 true ATE428185T1 (de) 2009-04-15

Family

ID=31949786

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03754405T ATE428185T1 (de) 2002-08-23 2003-08-22 Cmos aps mit gestapelter lawinenvermehrungsschicht und niederspannungsausleseschaltung

Country Status (9)

Country Link
US (5) US6821808B2 (de)
EP (1) EP1547152B1 (de)
JP (1) JP2005536930A (de)
KR (1) KR100681097B1 (de)
CN (2) CN101309351A (de)
AT (1) ATE428185T1 (de)
AU (1) AU2003272232A1 (de)
DE (1) DE60327087D1 (de)
WO (1) WO2004019609A2 (de)

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Also Published As

Publication number Publication date
US20040046101A1 (en) 2004-03-11
CN101309351A (zh) 2008-11-19
KR20050083654A (ko) 2005-08-26
WO2004019609A3 (en) 2004-05-13
US7372495B2 (en) 2008-05-13
JP2005536930A (ja) 2005-12-02
AU2003272232A8 (en) 2004-03-11
US20060187330A1 (en) 2006-08-24
EP1547152B1 (de) 2009-04-08
KR100681097B1 (ko) 2007-02-08
US7365773B2 (en) 2008-04-29
US7880791B2 (en) 2011-02-01
US20090200455A1 (en) 2009-08-13
US20080225133A1 (en) 2008-09-18
US20040036786A1 (en) 2004-02-26
CN1689164A (zh) 2005-10-26
AU2003272232A1 (en) 2004-03-11
US7525588B2 (en) 2009-04-28
DE60327087D1 (de) 2009-05-20
EP1547152A2 (de) 2005-06-29
US6821808B2 (en) 2004-11-23
WO2004019609A2 (en) 2004-03-04
CN100499145C (zh) 2009-06-10

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