DE60023537D1 - Aktivmatrix-bildsensor-pixel mit rücksetzelektrode, welche den photoempfindlichen bereich umgibt - Google Patents

Aktivmatrix-bildsensor-pixel mit rücksetzelektrode, welche den photoempfindlichen bereich umgibt

Info

Publication number
DE60023537D1
DE60023537D1 DE60023537T DE60023537T DE60023537D1 DE 60023537 D1 DE60023537 D1 DE 60023537D1 DE 60023537 T DE60023537 T DE 60023537T DE 60023537 T DE60023537 T DE 60023537T DE 60023537 D1 DE60023537 D1 DE 60023537D1
Authority
DE
Germany
Prior art keywords
image sensor
entries
active matrix
sensitive area
sensor pixel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60023537T
Other languages
English (en)
Other versions
DE60023537T2 (de
Inventor
Morteza Afghahi
Ramin Rajabian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Application granted granted Critical
Publication of DE60023537D1 publication Critical patent/DE60023537D1/de
Publication of DE60023537T2 publication Critical patent/DE60023537T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Facsimile Heads (AREA)
DE60023537T 1999-09-30 2000-08-30 Aktivmatrix-bildsensor-pixel mit rücksetzelektrode, welche den photoempfindlichen bereich umgibt Expired - Lifetime DE60023537T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US409162 1999-09-30
US09/409,162 US6486913B1 (en) 1999-09-30 1999-09-30 Pixel array with shared reset circuitry
PCT/US2000/040793 WO2001026157A1 (en) 1999-09-30 2000-08-30 Active matrix image sensor pixel with reset gate surrounding the photosensitive region

Publications (2)

Publication Number Publication Date
DE60023537D1 true DE60023537D1 (de) 2005-12-01
DE60023537T2 DE60023537T2 (de) 2006-07-20

Family

ID=23619303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60023537T Expired - Lifetime DE60023537T2 (de) 1999-09-30 2000-08-30 Aktivmatrix-bildsensor-pixel mit rücksetzelektrode, welche den photoempfindlichen bereich umgibt

Country Status (7)

Country Link
US (1) US6486913B1 (de)
EP (1) EP1228531B1 (de)
AT (1) ATE308117T1 (de)
AU (1) AU1960401A (de)
DE (1) DE60023537T2 (de)
TW (1) TW498681B (de)
WO (1) WO2001026157A1 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990084630A (ko) * 1998-05-08 1999-12-06 김영환 씨모스 이미지 센서 및 그 구동 방법
US6734906B1 (en) * 1998-09-02 2004-05-11 Canon Kabushiki Kaisha Image pickup apparatus with photoelectric conversion portions arranged two dimensionally
US6750912B1 (en) * 1999-09-30 2004-06-15 Ess Technology, Inc. Active-passive imager pixel array with small groups of pixels having short common bus lines
JP2007528116A (ja) * 2003-05-09 2007-10-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ フラットパネルｘ線検出器
US7443437B2 (en) * 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
US7542085B2 (en) * 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
US11282891B2 (en) 2003-11-26 2022-03-22 Samsung Electronics Co., Ltd. Image sensor with a gated storage node linked to transfer gate
US20050128327A1 (en) * 2003-12-10 2005-06-16 Bencuya Selim S. Device and method for image sensing
JP4971586B2 (ja) 2004-09-01 2012-07-11 キヤノン株式会社 固体撮像装置
US7830437B2 (en) * 2005-05-11 2010-11-09 Aptina Imaging Corp. High fill factor multi-way shared pixel
US7714917B2 (en) * 2005-08-30 2010-05-11 Aptina Imaging Corporation Method and apparatus providing a two-way shared storage gate on a four-way shared pixel
JP4486015B2 (ja) * 2005-09-13 2010-06-23 パナソニック株式会社 固体撮像装置
US7667183B2 (en) * 2006-03-10 2010-02-23 Samsung Electronics Co., Ltd. Image sensor with high fill factor pixels and method for forming an image sensor
US7924333B2 (en) 2007-08-17 2011-04-12 Aptina Imaging Corporation Method and apparatus providing shared pixel straight gate architecture
US7989749B2 (en) * 2007-10-05 2011-08-02 Aptina Imaging Corporation Method and apparatus providing shared pixel architecture
US8264377B2 (en) 2009-03-02 2012-09-11 Griffith Gregory M Aircraft collision avoidance system
WO2019164898A1 (en) 2018-02-20 2019-08-29 Intelligent Cleaning Equipment Holdings Co. Ltd. Tracking device, system for tracking objects, and associated method of use
US11682313B2 (en) 2021-03-17 2023-06-20 Gregory M. Griffith Sensor assembly for use in association with aircraft collision avoidance system and method of using the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841176A (en) * 1996-03-01 1998-11-24 Foveonics, Inc. Active pixel sensor cell that minimizes leakage current
DE19724392A1 (de) 1996-06-10 1997-12-11 Nat Semiconductor Corp Aktive Pixelsensorzelle
US6160281A (en) * 1997-02-28 2000-12-12 Eastman Kodak Company Active pixel sensor with inter-pixel function sharing
US6130713A (en) * 1997-06-27 2000-10-10 Foveonics, Inc. CMOS active pixel cell with self reset for improved dynamic range
US6130423A (en) * 1998-07-10 2000-10-10 Pixel Cam, Inc. Method and apparatus for a CMOS image sensor with a distributed amplifier

Also Published As

Publication number Publication date
ATE308117T1 (de) 2005-11-15
EP1228531B1 (de) 2005-10-26
WO2001026157A1 (en) 2001-04-12
DE60023537T2 (de) 2006-07-20
EP1228531A1 (de) 2002-08-07
US6486913B1 (en) 2002-11-26
TW498681B (en) 2002-08-11
AU1960401A (en) 2001-05-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806