CN101371196B - 抗反射涂料 - Google Patents

抗反射涂料 Download PDF

Info

Publication number
CN101371196B
CN101371196B CN2006800527193A CN200680052719A CN101371196B CN 101371196 B CN101371196 B CN 101371196B CN 2006800527193 A CN2006800527193 A CN 2006800527193A CN 200680052719 A CN200680052719 A CN 200680052719A CN 101371196 B CN101371196 B CN 101371196B
Authority
CN
China
Prior art keywords
value
electronic device
composition
solvent
general formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2006800527193A
Other languages
English (en)
Chinese (zh)
Other versions
CN101371196A (zh
Inventor
P-F·付
E·S·莫耶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of CN101371196A publication Critical patent/CN101371196A/zh
Application granted granted Critical
Publication of CN101371196B publication Critical patent/CN101371196B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/02Polysilicates
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0752Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Polymers (AREA)
  • Paints Or Removers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Formation Of Insulating Films (AREA)
CN2006800527193A 2006-02-13 2006-12-07 抗反射涂料 Expired - Fee Related CN101371196B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US77261906P 2006-02-13 2006-02-13
US60/772,619 2006-02-13
PCT/US2006/046810 WO2007094848A2 (en) 2006-02-13 2006-12-07 Antireflective coating material

Publications (2)

Publication Number Publication Date
CN101371196A CN101371196A (zh) 2009-02-18
CN101371196B true CN101371196B (zh) 2012-07-04

Family

ID=38371944

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2006800527193A Expired - Fee Related CN101371196B (zh) 2006-02-13 2006-12-07 抗反射涂料

Country Status (7)

Country Link
US (1) US8263312B2 (https=)
EP (1) EP1989593A2 (https=)
JP (1) JP4881396B2 (https=)
KR (1) KR101324052B1 (https=)
CN (1) CN101371196B (https=)
TW (1) TWI406099B (https=)
WO (1) WO2007094848A2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7756384B2 (en) * 2004-11-08 2010-07-13 Dow Corning Corporation Method for forming anti-reflective coating
US20070212886A1 (en) * 2006-03-13 2007-09-13 Dong Seon Uh Organosilane polymers, hardmask compositions including the same and methods of producing semiconductor devices using organosilane hardmask compositions
JP4945460B2 (ja) * 2008-01-04 2012-06-06 株式会社東芝 反射防止構造の形成方法および反射防止構造
WO2009088600A1 (en) * 2008-01-08 2009-07-16 Dow Corning Toray Co., Ltd. Silsesquioxane resins
KR20100114075A (ko) * 2008-01-15 2010-10-22 다우 코닝 코포레이션 실세스퀴옥산 수지
CN101990551B (zh) * 2008-03-04 2012-10-03 陶氏康宁公司 倍半硅氧烷树脂
KR101541939B1 (ko) * 2008-03-05 2015-08-04 다우 코닝 코포레이션 실세스퀴옥산 수지
US8293354B2 (en) * 2008-04-09 2012-10-23 The Regents Of The University Of Michigan UV curable silsesquioxane resins for nanoprint lithography
KR101690159B1 (ko) * 2008-12-10 2016-12-27 다우 코닝 코포레이션 변환가능한 반사방지 코팅
EP2373722A4 (en) 2008-12-10 2013-01-23 Dow Corning SILSESQUIOXAN RESINS
US20110236835A1 (en) * 2008-12-10 2011-09-29 Peng-Fei Fu Silsesquioxane Resins
US9353268B2 (en) 2009-04-30 2016-05-31 Enki Technology, Inc. Anti-reflective and anti-soiling coatings for self-cleaning properties
US9376593B2 (en) * 2009-04-30 2016-06-28 Enki Technology, Inc. Multi-layer coatings
US20110305787A1 (en) * 2010-06-11 2011-12-15 Satoshi Ishii Stamper for transfer of microscopic structure and transfer apparatus of microscopic structure
EP2588287A4 (en) * 2010-07-01 2018-01-17 Inmold Biosystems A/S Method and apparatus for producing a nanostructured or smooth polymer article
US9598586B2 (en) 2014-07-14 2017-03-21 Enki Technology, Inc. Coating materials and methods for enhanced reliability
US9376589B2 (en) 2014-07-14 2016-06-28 Enki Technology, Inc. High gain durable anti-reflective coating with oblate voids
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
US10597495B2 (en) * 2016-02-19 2020-03-24 Dow Silicones Corporation Aged polymeric silsesquioxanes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US20020065331A1 (en) * 2000-10-10 2002-05-30 Shipley Company, L.L.C. Antireflective porogens
WO2004044025A2 (en) * 2002-11-12 2004-05-27 Honeywell International Inc Anti-reflective coatings for photolithography and methods of preparation thereof
WO2004046224A1 (en) * 2002-11-18 2004-06-03 Honeywell International Inc. Organohydridosiloxane resins with high organic content

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587138A (en) 1984-11-09 1986-05-06 Intel Corporation MOS rear end processing
US5010159A (en) 1989-09-01 1991-04-23 Dow Corning Corporation Process for the synthesis of soluble, condensed hydridosilicon resins containing low levels of silanol
US5100503A (en) 1990-09-14 1992-03-31 Ncr Corporation Silica-based anti-reflective planarizing layer
US5210168A (en) 1992-04-02 1993-05-11 Dow Corning Corporation Process for forming siloxane bonds
EP0568476B1 (en) 1992-04-30 1995-10-11 International Business Machines Corporation Silicon-containing positive resist and method of using the same in thin film packaging technology
JPH0656560A (ja) 1992-08-10 1994-03-01 Sony Corp Sog組成物及びそれを用いた半導体装置の製造方法
US5441765A (en) 1993-09-22 1995-08-15 Dow Corning Corporation Method of forming Si-O containing coatings
JP3499032B2 (ja) 1995-02-02 2004-02-23 ダウ コーニング アジア株式会社 放射線硬化性組成物、その硬化方法及びパターン形成方法
JP3324360B2 (ja) 1995-09-25 2002-09-17 信越化学工業株式会社 ポリシロキサン化合物及びポジ型レジスト材料
JPH09124794A (ja) 1995-11-06 1997-05-13 Dow Corning Asia Ltd 有機光機能材を含有するポリシロキサン樹脂組成物及びそれから得られる透明な光機能素子
JP3192947B2 (ja) 1995-11-16 2001-07-30 東京応化工業株式会社 シリカ系被膜形成用塗布液の製造方法
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US6448331B1 (en) * 1997-07-15 2002-09-10 Asahi Kasei Kabushiki Kaisha Alkoxysilane/organic polymer composition for thin insulating film production and use thereof
JPH1184640A (ja) * 1997-09-05 1999-03-26 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液
US6057239A (en) 1997-12-17 2000-05-02 Advanced Micro Devices, Inc. Dual damascene process using sacrificial spin-on materials
US6344284B1 (en) 1998-04-10 2002-02-05 Organic Display Technology Organic electroluminescent materials and devices made from such materials
US6156640A (en) 1998-07-14 2000-12-05 United Microelectronics Corp. Damascene process with anti-reflection coating
US6087064A (en) 1998-09-03 2000-07-11 International Business Machines Corporation Silsesquioxane polymers, method of synthesis, photoresist composition, and multilayer lithographic method
US6461955B1 (en) 1999-04-29 2002-10-08 Texas Instruments Incorporated Yield improvement of dual damascene fabrication through oxide filling
US6281285B1 (en) 1999-06-09 2001-08-28 Dow Corning Corporation Silicone resins and process for synthesis
US6824879B2 (en) * 1999-06-10 2004-11-30 Honeywell International Inc. Spin-on-glass anti-reflective coatings for photolithography
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
JP2003502449A (ja) 1999-06-10 2003-01-21 ハネウエル・インターナシヨナル・インコーポレーテツド フォトリソグラフィ用スピンオンガラス反射防止コーティング
US6890448B2 (en) 1999-06-11 2005-05-10 Shipley Company, L.L.C. Antireflective hard mask compositions
US6329118B1 (en) 1999-06-21 2001-12-11 Intel Corporation Method for patterning dual damascene interconnects using a sacrificial light absorbing material
US6982006B1 (en) 1999-10-19 2006-01-03 Boyers David G Method and apparatus for treating a substrate with an ozone-solvent solution
US6359096B1 (en) 1999-10-25 2002-03-19 Dow Corning Corporation Silicone resin compositions having good solution solubility and stability
KR100355604B1 (ko) 1999-12-23 2002-10-12 주식회사 하이닉스반도체 난반사 방지막용 중합체와 그 제조방법
JP3795333B2 (ja) 2000-03-30 2006-07-12 東京応化工業株式会社 反射防止膜形成用組成物
US6420088B1 (en) 2000-06-23 2002-07-16 International Business Machines Corporation Antireflective silicon-containing compositions as hardmask layer
US6368400B1 (en) 2000-07-17 2002-04-09 Honeywell International Absorbing compounds for spin-on-glass anti-reflective coatings for photolithography
JP4141625B2 (ja) 2000-08-09 2008-08-27 東京応化工業株式会社 ポジ型レジスト組成物およびそのレジスト層を設けた基材
EP1197511A1 (en) 2000-10-10 2002-04-17 Shipley Company LLC Antireflective composition
US6589711B1 (en) 2001-04-04 2003-07-08 Advanced Micro Devices, Inc. Dual inlaid process using a bilayer resist
US6746530B2 (en) 2001-08-02 2004-06-08 Chunghwa Pictures Tubes, Ltd. High contrast, moisture resistant antistatic/antireflective coating for CRT display screen
US20030096090A1 (en) 2001-10-22 2003-05-22 Boisvert Ronald Paul Etch-stop resins
EP1478682A4 (en) 2001-11-15 2005-06-15 Honeywell Int Inc ANTIREFLECTIVE LAYERS FOR PHOTOLITHOGRAPHY AND METHODS OF PREPARATION THEREOF
WO2003044600A1 (en) 2001-11-15 2003-05-30 Honeywell International Inc. Spin-on anti-reflective coatings for photolithography
JP2005509710A (ja) 2001-11-16 2005-04-14 ハネウェル・インターナショナル・インコーポレーテッド フォトリソグラフィ用のスピンオングラス反射防止性コーティング
US6730454B2 (en) 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
JP4244315B2 (ja) * 2002-12-02 2009-03-25 東京応化工業株式会社 レジストパターン形成用材料
KR20050084283A (ko) 2002-12-02 2005-08-26 토쿄오오카코교 가부시기가이샤 래더형 실리콘 공중합체
TW200505966A (en) 2003-04-02 2005-02-16 Dow Global Technologies Inc Organosilicate resin formulation for use in microelectronic devices
ATE377036T1 (de) 2003-05-23 2007-11-15 Dow Corning Siloxan-harz basierte anti- reflektionsbeschichtung mit hoher nassätzgeschwindigkeit
CN101073039B (zh) 2004-12-17 2011-12-14 陶氏康宁公司 形成抗反射涂层的方法
DE602005008100D1 (de) 2004-12-17 2008-08-21 Dow Corning Verfahren zur ausbildung einer antireflexionsbeschichtung
ATE486098T1 (de) 2004-12-17 2010-11-15 Dow Corning Siloxanharzbeschichtung
WO2006065316A1 (en) 2004-12-17 2006-06-22 Dow Corning Corporation Method for forming anti-reflective coating

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6177143B1 (en) * 1999-01-06 2001-01-23 Allied Signal Inc Electron beam treatment of siloxane resins
US20020065331A1 (en) * 2000-10-10 2002-05-30 Shipley Company, L.L.C. Antireflective porogens
WO2004044025A2 (en) * 2002-11-12 2004-05-27 Honeywell International Inc Anti-reflective coatings for photolithography and methods of preparation thereof
WO2004046224A1 (en) * 2002-11-18 2004-06-03 Honeywell International Inc. Organohydridosiloxane resins with high organic content

Also Published As

Publication number Publication date
US20080318436A1 (en) 2008-12-25
TWI406099B (zh) 2013-08-21
KR20080094686A (ko) 2008-10-23
JP4881396B2 (ja) 2012-02-22
WO2007094848A3 (en) 2007-12-06
US8263312B2 (en) 2012-09-11
WO2007094848A2 (en) 2007-08-23
JP2009527021A (ja) 2009-07-23
TW200739270A (en) 2007-10-16
CN101371196A (zh) 2009-02-18
EP1989593A2 (en) 2008-11-12
KR101324052B1 (ko) 2013-11-01

Similar Documents

Publication Publication Date Title
CN101072896B (zh) 形成抗反射涂层的方法
TWI406099B (zh) 抗反射塗料材料
CN101990551B (zh) 倍半硅氧烷树脂
CN101910253B (zh) 倍半硅氧烷树脂
CN101073038B (zh) 形成抗反射涂层的方法
CN101910255B (zh) 倍半硅氧烷树脂
CN101073039B (zh) 形成抗反射涂层的方法
CN104136493A (zh) 作为硬掩膜抗反射涂层材料的基于二叔丁氧基二乙酰氧基硅烷的倍半硅氧烷树脂及其制备方法
US8653217B2 (en) Method for forming anti-reflective coating
WO2007094849A2 (en) Antireflective coating material

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120704

Termination date: 20151207

EXPY Termination of patent right or utility model