CN101369637A - 有机电致发光器件和其制造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000007789 sealing Methods 0.000 claims abstract description 94
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 238000000151 deposition Methods 0.000 claims description 38
- 230000008021 deposition Effects 0.000 claims description 37
- 238000005401 electroluminescence Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 34
- 229920001709 polysilazane Polymers 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 15
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 12
- 150000004767 nitrides Chemical class 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 20
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 14
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 44
- 239000007789 gas Substances 0.000 description 33
- 239000000463 material Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 230000035699 permeability Effects 0.000 description 14
- 238000005259 measurement Methods 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910002804 graphite Inorganic materials 0.000 description 4
- 239000010439 graphite Substances 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000428 dust Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- UHXOHPVVEHBKKT-UHFFFAOYSA-N 1-(2,2-diphenylethenyl)-4-[4-(2,2-diphenylethenyl)phenyl]benzene Chemical compound C=1C=C(C=2C=CC(C=C(C=3C=CC=CC=3)C=3C=CC=CC=3)=CC=2)C=CC=1C=C(C=1C=CC=CC=1)C1=CC=CC=C1 UHXOHPVVEHBKKT-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008045 Si-Si Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006411 Si—Si Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical compound [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- -1 metal complex compound Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000004451 qualitative analysis Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000002351 wastewater Substances 0.000 description 1
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- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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Abstract
在玻璃基片上形成包括阳极、有机光发射层及阴极的一种电致发光器件,在该电致发光元件表面上形成由Si及SiNx构成的覆盖该电致发光元件的密封薄膜,其中键合硅原子的硅原子数目对键合氮原子的硅原子数目的比等于或大于0.6但等于或小于2.0。
Description
本申请是申请号为2005100524690、申请日为2005年2月28日、发明名称为“有机
电致发光器件和其制造方法”的发明专利申请的分案申请。
技术领域
本发明一般涉及一种有机电致发光(EL)器件,更具体地说,涉及一种对有机电致发光器件所用密封薄膜特征的改进。
本发明也涉及制造这种有机电致发光器件的方法。
背景技术
迄今,由于有机电致发光器件可以实现自身光发射以获得一种高发光率的屏幕,有机电致发光器件的实际应用正广泛被发展用于薄又轻的便携式设备等的显示器或发光设备。这种有机电致发光器件具有一种其中在基片上形成电致发光元件的结构,此电致发光元件包括一对其中至少一层电极层是透明的电极层和一层夹在该电极层对之间的有机光发射层。
对于这种有机电致发光器件有一种担心,即由于水分和诸如氧的气体渗透而引起图像质量衰变和寿命缩短,可能会损害电致发光元件的有机光发射层和电极层。因此,有人建议,用密封薄膜覆盖电致发光元件的表面,以防止外部水分和气体的渗入。
例如,JP 2003-118030 A披露了一种电致发光器件,其中利用干燥方法,在有机基底材料的表面上形成一层气体阻挡层,利用湿法在该气体阻挡层的表面上形成由含聚硅氮烷组合物的固化过的物质制成的固化物质层,并将所得的基底材料作为密封薄膜布置于电致发光元件的表面上。
但是,按JP 2003-116030 A披露的技术,在有机基底材料表面上形成气体阻挡层及固化物质层,并将所得基底材料配置于电致发光元件表面上,也导致了使电致发光器件结构复杂,厚度增加,和使制造电致发光器件方法复杂化的问题。
发明内容
为解决上述与已有技术相关的问题完成了本发明,因此,本发明目的在于提供一种有机电致发光器件,它能有效地防止水分和气体渗入,而且结构简单。
本发明另一个目的在于,提供一种能获得这种有机电致发光器件的制造有机电致发光器件的方法。
按照本发明的有机电致发光器件包括:一层基片;在该基片表面上形成并至少有第一电极层、有机光发射层和第二电极层的一种电致发光元件;和在该电致发光元件表面上形成一层密封薄膜,以覆盖该电致发光元件,该密封薄膜由硅和硅的氮化物制成,其中键合硅原子的硅原子数目对键合氮原子的硅原子数目之比,等于或大于0.6、但等于或小于2.0。
本发明的发明人认真反复地进行了研究,结果很清楚,即使当键合硅原子的硅原子数目对键合氮原子的硅原子数目之比小于0.6或大于2.0时,所形成的密封薄膜的水蒸汽透过率表明其数值不可忽略不计,但当此比等于或大于0.6但等于或小于2.0时,所形成的密封薄膜的水蒸汽透过率等于或小于测量精度极限值。由于这个原因,可以断定,将适量的Si-Si键合链分散到Si-N键合链中,会增强密封性能。
注意,还可利用聚硅氮烷在此密封薄膜表面上形成由SiO2构成的第二密封薄膜。
按照本发明制造有机电致发光器件的方法包括:在基片上形成至少有第一电极层、有机光发射层和第二电极层的一种电致发光元件;和至少提供一种SiH4气体和N2气,并调节SiH4气体的流率和所提供的电能,以便利用等离子体CVD方法,以等于或高于300纳米/分钟但等于或低于600纳米/分钟的淀积速率,在此电致发光元件表面上形成由Si和硅的氮化物构成的密封薄膜,覆盖该电致发光元件。
由Si和硅的氮化物构成的密封薄膜的淀积速率,主要取决于SiH4气体的流率和所提供的电能量,而且,明显的是,当该淀积速率等于或高于300纳米/分钟但等于或低于600纳米/分钟时,其水蒸汽透过率等于或小于测量精度极限值。
注意,优选的是,通过等离子体CVD的方法,在设定NH3气流率对SiH4气体流率之比等于或高于0.0但等于或低于0.2的条件下,提供NH3气,形成密封薄膜。
此外,还可通过对该密封薄膜表面涂布聚硅氮烷的方法,形成由SiO2构成的薄膜,并使之受到烘烤处理。聚硅氮烷也可以是处于半干燥状态的。
附图说明
图1是说明按照本发明实施方案1的有机电致发光器件的结构横断面图;
图2图示说明密封薄膜的淀积速率和其水蒸汽透过率间的关联;
图3图示说明键合硅的硅原子数目对键合氮原子的硅原子数目之比与其水蒸汽透过率间的关联;
图4图示说明制造密封薄膜时NH3气流率对SiH4气体流率之比与所制造的密封薄膜应力变化量间的关联;
图5是说明按照本发明实施方案2的有机电致发光器件的结构横断面图;
图6是说明实施方案2在电致发光元件表面上存在异物时有机电致发光器件主要部分的放大横断面图。
具体实施方式
此后将参考附图详细描述本发明的优选实施方案。
实施方案1
图1是说明按照本发明实施方案1的有机电致发光(EL)器件的结构横断面图。在透明玻璃基片1上形成电致发光元件2。此电致发光元件2包括:在玻璃基片1表面上形成作为第一电极层的阳极3,在阳极3上形成的有机光发射层4,和在有机光发射层4上形成作为第二电极层的阴极5。在此电致发光元件2表面上形成一层密封薄膜6,覆盖电致发光元件2。
可用能够透射可见光的透明或半透明材料制成玻璃基片1。因此,除玻璃外,也可以采用满足这种条件的树脂作为基片材料。电致发光元件2的阳极3可有作为电极的功能,也可以是至少透明或半透明的,使之能够透射可见光。因此,例如,可以采用ITO作为阳极3的材料。用于有机光发射层4的材料至少包含一种已知的有机电致发光材料,诸如Alq3或DCM。此外,在阳极3和阴极5之间也可以适当地形成一层或多层那些在已知有机电致发光器件中所采用的诸如电子传递层和空穴传递层。各层均由已知材料适当地构成。阴极5可以具有作为电极的功能,并至少可有一种反射可见光的特性。因此,例如,对于阴极5,可以采用Al、Cr、Mo、铝合金或Al/Mo层压层等。可利用已知薄膜成型方法,诸如汽相淀积方法,形成各层。
密封薄膜6由Si和硅的氮化物构成。对于这种材料,键合硅原子的硅原子数目对键合氮原子的硅原子数目之比等于或大于0.6但等于或小于2.0。利用这种密封薄膜6,使有可能获得优异的密封能力,防止外部水分和气体渗入电致发光元件2中。
在这种有机电致发光器件中,在其上形成有电致发光元件2的反面,即玻璃基片1的主表面,是一种光发射表面。也就是说,使有机光发射层4发射的光线,直接入射至阳极3,或使之在通过阴极5反射后间接地入射至阳极3,而透射穿过玻璃基片1,从玻璃基片1的光发射表面放射至外部。
接着,此后将描述按照本发明实施方案1的制造有机电致发光器件的方法。首先,利用已知薄膜成型方法诸如汽相淀积法,将阳极3、有机光发射层4和阴极5依次层压在玻璃基片1的表面上,使形成电致发光元件2。
此后,将其上形成有电致发光元件的玻璃基片1传送至处于真空或非活性环境气氛中的等离子体CVD体系淀积室内的某个位置上,利用等离子体CVD方法,在阴极5表面上形成密封薄膜6。此时,对等离子体CVD体系淀积室至少提供SiH4气体和N2气。接着,通过调节SiH4气体的流率和所提供的电能,达到以等于或高于300纳米/分钟但等于或低于600纳米/分钟的淀积速率,在阴极5表面上形成密封薄膜6。
结果,制成该有机电致发光器件。
这里,将尺寸为100mm x 100mm x 0.4mm的聚碳酸酯系列薄膜,放进等离子体CVD体系淀积室内,然后排放淀积室内的空气至压力1 x 10-3Pa。在此状态之下,促使SiH4气体、NH3气和N2气流入淀积室内,以调节压力至100Pa。然后,在间隙20毫米的一对电极之间施加13.56MHZ的高频电,对气体放电,从而在聚碳酸酯系列薄膜表面上,淀积厚度0.5μm的密封薄膜。这时,NH3流率和N2流率分别被调节至50毫升/分钟和1000毫升/分钟,并分别调节SiH4流率和在电极对间施加的电能,各样地改变密封薄膜的淀积速率,从而形成各种密封薄膜,并对各样形成的密封薄膜测定键合硅原子的硅原子的数目对键合氮原子的硅原子的数目的比和其水蒸汽透过率,获得以下测量结果,如表1所示。注意水蒸汽透过率0.1g/m2·day(克/平方米·日)表示它等于或低于测量精度极限值。
表1
SiH4流率(ml/mm) | 电能(w) | 淀积速率(nm/min) | 键合Si原子的Si原子数对键合N原子的Si原子数的比 | 水蒸汽渗透率(g/m2·day) |
75 | 500 | 128.0 | 0.381 | 0.4 |
100 | 600 | 167.1 | 0.401 | 0.39 |
200 | 700 | 242.8 | 0.484 | 0.39 |
200 | 800 | 332.4 | 0.742 | 0.1 |
300 | 700 | 403.3 | 1.169 | 0.1 |
300 | 800 | 441.9 | 1.375 | 0.1 |
500 | 800 | 543.3 | 1.717 | 0.1 |
500 | 1000 | 622.5 | 2.333 | 0.17 |
注意,采用X射线光电子分光镜AXIS ULTRA(由英国KRATOS Co.,Ltd.公司制造),分析各样形成的密封薄膜,测定在各样形成的密封薄膜中键合硅原子的硅原子数目对键合氮原子的硅原子数目的比。也就是,在高真空下用X-射线照射该密封薄膜的表面,测定从该密封薄膜表面发射出的电子能量,从而对化学元素进行定性和定量分析。在这种测定中,预先用其键能接近于Si的轨道2p的Au的轨道4f(84.00eV)来标定X射线光电子分光镜。然后,将该密封薄膜作为样品放入淀积室中,排放该室内空气,使压力等于或低于1 x 10-7Pa,并进行Ar离子浸蚀5分钟,除去密封薄膜表面上的氧化物膜和污染。然后,获得所得样品键能97-100eV(电子伏特)的波形,此波形被分离成具有101.9eV峰位的波形(源于键合氮原子的硅原子)和具有99.7eV峰位的波形(源于键合硅原子的硅原子)。然后,将这两种波形间的面积比定义为键合硅原子的硅原子数目对键合氮原子的硅原子数目的比。
此外,利用一种mocon方法测定其水蒸汽透过率。
根据表1测量结果,获得如图2所示的淀积速率和水蒸汽透过率间的关联。根据图2可以看出,以等于或高于300纳米/分钟但等于或低于600纳米/分钟的淀积速率所形成的密封薄膜的水蒸汽透过率,是等于或低于测量精度极限值的,因此,在这种条件下制成的密封薄膜显示了优异的密封性能。
同样,根据表1测量结果,获得了如图3所示的键合硅原子的硅原子数目对键合氮原子的硅原子数目之比与水蒸汽透过率间的关联。根据图3可以看出,其中键合硅原子的硅原子数目对键合氮原子的硅原子数目的比等于或大于0.6但等于或小于2.0的密封薄膜的水蒸汽透过率,是等于或低于测量精度极限值的,因此,在这种条件下制成的密封显示优异密封性能。
此外,调节流入等离子体CVD体系淀积室中的SiH4气体流率至300毫升/分钟,并调节电极间所施加的供给电能至700瓦特(W),以达到该密封薄膜的淀积速率为约400纳米/分钟,在这种条件下,多样化地改变NH3气流率至0、25、50、100、150及300毫升/分钟,以分别形成厚度各2.0微米的各样密封薄膜。注意,N2流率被设定在1000毫升/分钟,供给电能频率被设定为13.56MHz。当所形成的密封薄膜保留在其温度保持60℃和相对湿度90%的高温及高湿度容器(由TABAIESPEC公司有限公司制造)中500小时后,测定所形成的各样密封薄膜的初始应力及其应力,获得了如表2所示的测量结果。
表2
SiO4流率(ml/min) | NH3流率(ml/min) | NH3对SiO4的流率比 | 初始应力(Mpa) | 500小时后应力(Mpa) | 应力变化量(Mpa) |
300 | 0 | 0.000 | -50.94 | -49.76 | 1.18 |
300 | 25 | 0.083 | -73.49 | -71.90 | 1.59 |
300 | 50 | 0.167 | -70.52 | -73.34 | -2.82 |
300 | 100 | 0.333 | -65.05 | -101.92 | -36.87 |
300 | 150 | 0.500 | -77.20 | -111.06 | -33.86 |
300 | 300 | 1.000 | -62.38 | -116.39 | -54.01 |
注意,在4英寸Si晶片上形成密封薄膜,提前测定其翘曲(warp)量,然后再测定该密封薄膜在刚形成时Si晶片的翘曲量和该密封薄膜在高温及高湿度容器中保留500小时之后Si晶片的翘曲量,然后分别比较这些Si晶片所得翘曲量与形成密封薄膜之前Si晶片翘曲量,从而计算该密封薄膜的初始应力及该密封薄膜在高温高湿度容器中保留500小时之后的应力。接着,将该密封薄膜的初始应力与在密封薄膜保留500小时后的密封薄膜应力之间的差值定义为应力变化量。
根据表2测量结果,获得NH3流率对SiH4流率的比与应力变化量间的关联,如图4所示。从图4看出,当NH3流率对SiH4流率的比等于或大于0.0但等于或小于0.2时,应力变化量明显地小。通过利用汽相淀积法等已知淀积方法获得电致发光元件的有机光发射层及电极层,其机械强度低。因此,为了防止破损该电致发光元件的有机光发射层及电极层,要求为覆盖该电致发光元件所形成的密封薄膜的应力长期变化量小。因此,当在NH3流率对SiH4流率的比等于或大于0.0但等于或小于0.2下形成该密封薄膜时,能够获得显示应力变化量小的密封薄膜,因此,有可能获得其可靠性优异的有机电致发光器件。
实施方案2
图5说明按照本发明实施方案2的有机电致发光器件的横断面图。这种有机电致发光器件是在图1所示实施方案1中的密封薄膜6表面上形成第二密封薄膜7。
采用由聚硅氮烷形成厚度0.01-2.0μm的SiO2薄膜作为第二密封薄膜7。这里,在本说明书中认为聚硅氮烷含有电介质,而且其中部分键合硅原子的氢原子也被烷基基团等取代。第二密封薄膜7含有烷基,尤其,分子量小的甲基基团,从而提高了作为基底的密封薄膜6的粘着性能并赋予SiO2薄膜以柔性,因此,即使当第二密封薄膜7的厚度增大时,也会抑制产生裂隙。至于烷基基团,优选的是具有1-4个碳原子的烷基。此外,聚硅氮烷可以是其中保留有未反应成分的半干燥状态的聚硅氮烷。
此后将描述按照本发明实施方案2制造有机电致发光器件的方法。如同按照本发明实施方案1制造有机电致发光器件的情况,利用已知薄膜成型方法诸如汽相淀积方法,在玻璃基片1的表面上依次层压阳极3、有机光发射层4及阴极5,以形成电致发光元件2。然后,将其上形成有电致发光元件2的玻璃基片传送到等离子体CVD体系淀积室内某个位置,以便通过对等离子体CVD体系的淀积室至少提供SiH4气体及N2气的方法,并也以通过调节SiH4气体流率及提供电能方法获得的等于或高于300纳米/分钟但等于或低于600纳米/分钟的淀积速率,在阴极5表面上形成密封薄膜6。
此后,将具有电致发光元件2的玻璃基片及其上形成的密封薄膜6置于对密封薄膜6表面涂布聚硅氮烷的气氛中。可能采用各种方法,诸如旋涂法、浸染法、流动法、辊式涂布法及丝网印法,作为其涂布方法。此外,也可以在形成密封薄膜6时的环境气氛中,将聚硅氮烷涂布在密封薄膜6的表面上,或在非活性的环境气氛中而不将其置于该气氛中。
按照这样,利用一种加热元件诸如烘箱或加热板,对具有电致发光元件2、密封薄膜6及其上形成的聚硅氮烷的玻璃基片进行烘烤处理,以使聚硅氮烷按照以下化学反应式进行反应,使在密封薄膜6表面上形成第二密封薄膜7:
[-SiH2NH-]n+2H2O→SiO2+NH3+2H2
结果制成按照本发明实施方案2的有机电致发光器件。
在图6所示情况下,电致发光元件2的表面上存在异物8诸如粉尘,会使人担心,即使在电致发光元件2表面上形成了密封薄膜6,异物8也不会被密封薄膜6完全覆盖,因此在密封薄膜6中可能形成未被粘着的部分9。但是,在实施方案2中,由于在密封薄膜6上涂布聚硅氮烷,以形成第二密封薄膜7,所得到的第二密封薄膜7覆盖了作为基底的密封薄膜6的未粘着部分9。因此,有可能防止外部水分及气体渗入电致发光元件2中。
此外,由于在电致发光元件2表面上形成密封薄膜6之后,在该密封薄膜6表面上涂布聚硅氮烷,形成了第二密封薄膜7,这使有可能防止电致发光元件2被破损。
除尘土外,玻璃粉、光致抗蚀剂薄膜附着物等也是可能的异物8。但是,在任何情况下,第二密封薄膜7都能覆盖未被粘着的部分9,防止了水分及气体渗入电致发光元件2中。
当在这种烘烤处理进程中所涂聚硅氮烷的未反应成分留下来时,这种未反应的聚硅氮烷与渗入的水分发生反应,阻止了所渗入的水分到达电致发光元件2。其结果,有可能防止电致发光元件2由于渗入水分而引起的衰变。
本发明上述实施方案1及2描述了关于底部发射型有机电致发光器件,其中透明阳极3、有机光发射层4及反射阴极5是依次被层压在基片1上的,因此,由有机光发射层4发射的光线透射穿过透明阳极3及玻璃基片1放射到外界。但是,本发明并不限于这种底部发射型有机电致发光器件。也就是说,本发明也可应用于顶发射型有机电致发光器件,其中将反射电极、有机光发射层及透明电极依次层压在基片上,并因此使该有机光发射层发射的光线透射穿过透明电极的反面至基片而放射到外界。在这种情况下,第一和第二密封薄膜是依次在透明电极上形成的。因此第一和第二密封薄膜每个均必须由适用于透射可见光的透明或半透明的材料构成。
按照本发明,由Si及硅的氮化物构成的密封薄膜是在电致发光元件表面上形成的,其中键合硅原子的硅原子数目对键合氮原子的硅原子数目的比,等于或大于0.6、但等于或小于2.0。因此,尽管该电致发光器件结构简单,但它可能防止水分及气体渗入该电致发光元件中。
实施例1
利用反应溅射方法,在透明玻璃基片上形成由ITO构成的厚度190纳米的阳极。接着,作为汽相淀积形成光发射层之前对基片的清洗,利用一种碱溶液清洗该基片,然后用净化水清洗,在进行干燥后,利用紫外光/臭氧清洁光源清洗该基片。
将其上形成有阳极的基片传送至汽相淀积体系中,接着利用石墨坩埚,以0.1纳米/秒淀积速率及在真空度约5.0 x 10-5Pa下,在这阳极表面上淀积10纳米厚度的铜酞菁。以形成空穴注入区。
然后,利用石墨坩埚,以0.1纳米/秒的淀积速率及在5.0 x 10-5Pa的真空度下,在该空穴注入区表面上淀积厚度30纳米的三苯胺的四聚物,以形成空穴传递区。
此外,以0.1纳米/秒的淀积速率及在5.0 x 10-5Pa的真空度下,在该空穴传递区的表面上,淀积厚度30纳米的DPVBi(发光色:蓝色),以形成光线发射区。
利用石墨坩埚,以0.1纳米/秒的淀积速率及在约5.0 x 10-5Pa的真空度下,在该光线发射区上淀积厚度20纳米的作为quinolinolato系列金属络合物的Alq3,以形成电子传递区。
然后,利用石墨坩埚,以0.03纳米/秒的淀积速率及在5.0 x 10-5Pa的真空度下,在该电子传递区上淀积厚度0.5纳米的LiF,以形成阴极界面区。此外,再利用钨板材,以1纳米/秒的淀积速率及在约5.0 x 10-5Pa的真空度下,在该阴极界面区上淀积厚度100纳米的铝,以形成阴极。
用这种方式在玻璃基片上形成电致发光元件之后,利用等离子体CVD体系,在该电致发光元件表面上形成由Si及硅的氮化物构成的薄膜作为密封薄膜。也就是,将该玻璃基片放进等离子体CVD体系的淀积室中,排放淀积室内的空气至压力1.0 x 10-3Pa。接着,促使SiN4气体、NH3气及N2气流入该室,其流率分别为300毫升/分钟、50毫升/分钟及1000毫升/分钟,以调节压力至100Pa。然后,对间隙20毫米的电极对,施加13.56MHz及700W的高频电能,对该混合气体放电,从而在该电致发光元件表面上淀积形成厚度1μm的密封薄膜。
由此制成的有机电致发光器件的密封薄膜,其键合硅原子的硅原子数目对键合氮原子的硅原子数目的比为1.169。此外,测定该密封薄膜的水蒸汽透过率,其水蒸汽透过率等于或低于测量精度极限值。在将所形成的密封薄膜温度保留于60℃及相对湿度90%的环境中500小时后,其应力变化量数值低,达到-2.82MPa。
实施例2
与实施例1的相同,在透明玻璃基片上形成电致发光元件及利用等离子体CVD体系,在该电致发光元件表面上形成由Si及硅的氮化物构成的密封薄膜之后,利用转速设定为500rpm的旋涂器,在该密封薄膜表面上涂布20重量%聚硅氮烷,即NL-120(由CLARIANT JAPAN CO.Ltd公司生产),利用加热板使之在90℃下干燥30分钟,从而形成厚度0.5μm的由SiO2构成的第二密封薄膜。
Claims (5)
1.一种制造有机电致发光器件的方法,该方法包括下述步骤:
在基片上形成至少具有第一电极层、有机光发射层和第二电极层的电致发光元件;和
提供至少SiH4气体和N2气,并调节SiH4气体的流率和所提供的电能,从而利用等离子体CVD方法,以等于或高于300纳米/分钟但等于或低于600纳米/分钟的淀积速率,在所述电致发光元件的表面上,形成由Si和硅的氮化物构成的密封薄膜以覆盖该电致发光元件。
2.如权利要求1所述的制造有机电致发光器件的方法,其中,按照NH3气流率与SiH4气流率之比设定为等于或高于0.0但等于或低于0.2的比率,提供NH3气体,以利用等离子体CVD方法形成密封薄膜。
3.如权利要求1所述的制造有机电致发光器件的方法,其中将聚硅氮烷施用于密封薄膜的表面,并使之经受烘烤处理,以形成由SiO2构成的第二密封薄膜。
4.如权利要求3所述的制造有机电致发光器件的方法,其中通过旋涂法、浸染法、流动法、辊式涂布法和丝网印法中的任何一种方法,施用聚硅氮烷。
5.如权利要求3所述的制造有机电致发光器件的方法,其中聚硅氮烷处于半干燥状态。
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CN104472012A (zh) * | 2012-07-24 | 2015-03-25 | 三井金属矿业株式会社 | 电极箔和有机发光器件 |
CN107385413A (zh) * | 2016-04-25 | 2017-11-24 | 丰田自动车株式会社 | 成膜方法及成膜装置 |
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JP2007184251A (ja) | 2005-12-07 | 2007-07-19 | Sony Corp | 表示装置 |
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CN104472012A (zh) * | 2012-07-24 | 2015-03-25 | 三井金属矿业株式会社 | 电极箔和有机发光器件 |
CN104472012B (zh) * | 2012-07-24 | 2016-06-29 | 三井金属矿业株式会社 | 电极箔和有机发光器件 |
CN107385413A (zh) * | 2016-04-25 | 2017-11-24 | 丰田自动车株式会社 | 成膜方法及成膜装置 |
CN107385413B (zh) * | 2016-04-25 | 2019-12-17 | 丰田自动车株式会社 | 成膜方法及成膜装置 |
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US20050218803A1 (en) | 2005-10-06 |
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CN100433403C (zh) | 2008-11-12 |
CN1678151A (zh) | 2005-10-05 |
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