CN101369538A - 低导通阻抗功率场效应管vdmos的制作方法 - Google Patents
低导通阻抗功率场效应管vdmos的制作方法 Download PDFInfo
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- CN101369538A CN101369538A CNA2007101203018A CN200710120301A CN101369538A CN 101369538 A CN101369538 A CN 101369538A CN A2007101203018 A CNA2007101203018 A CN A2007101203018A CN 200710120301 A CN200710120301 A CN 200710120301A CN 101369538 A CN101369538 A CN 101369538A
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- 230000005669 field effect Effects 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000009279 wet oxidation reaction Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- -1 boron ion Chemical class 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract 2
- 239000007924 injection Substances 0.000 abstract 2
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- CVXNLQMWLGJQMZ-UHFFFAOYSA-N arsenic zinc Chemical compound [Zn].[As] CVXNLQMWLGJQMZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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CNB2007101203018A CN100568469C (zh) | 2007-08-15 | 2007-08-15 | 低导通阻抗功率场效应管vdmos的制作方法 |
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CNB2007101203018A CN100568469C (zh) | 2007-08-15 | 2007-08-15 | 低导通阻抗功率场效应管vdmos的制作方法 |
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CN101369538A true CN101369538A (zh) | 2009-02-18 |
CN100568469C CN100568469C (zh) | 2009-12-09 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102543694A (zh) * | 2012-01-06 | 2012-07-04 | 上海先进半导体制造股份有限公司 | Bcd器件的高温推阱工艺 |
CN102709191A (zh) * | 2012-06-07 | 2012-10-03 | 无锡市晶源微电子有限公司 | 一种复合外延制作中压n型系列双扩散型场效应管的制作工艺 |
CN101673673B (zh) * | 2009-09-22 | 2013-02-27 | 上海宏力半导体制造有限公司 | 外延片形成方法及使用该方法形成的外延片 |
CN104112709A (zh) * | 2013-04-19 | 2014-10-22 | 哈尔滨工大华生电子有限公司 | 一种rc滤波器制造工艺 |
CN105097540A (zh) * | 2014-05-21 | 2015-11-25 | 北大方正集团有限公司 | 平面vdmos器件的制造方法 |
WO2016049992A1 (zh) * | 2014-09-29 | 2016-04-07 | 无锡华润华晶微电子有限公司 | 一种垂直双扩散金属氧化物半导体场效应管及其制作方法 |
-
2007
- 2007-08-15 CN CNB2007101203018A patent/CN100568469C/zh active Active
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101673673B (zh) * | 2009-09-22 | 2013-02-27 | 上海宏力半导体制造有限公司 | 外延片形成方法及使用该方法形成的外延片 |
CN102543694A (zh) * | 2012-01-06 | 2012-07-04 | 上海先进半导体制造股份有限公司 | Bcd器件的高温推阱工艺 |
CN102709191A (zh) * | 2012-06-07 | 2012-10-03 | 无锡市晶源微电子有限公司 | 一种复合外延制作中压n型系列双扩散型场效应管的制作工艺 |
CN104112709A (zh) * | 2013-04-19 | 2014-10-22 | 哈尔滨工大华生电子有限公司 | 一种rc滤波器制造工艺 |
CN105097540A (zh) * | 2014-05-21 | 2015-11-25 | 北大方正集团有限公司 | 平面vdmos器件的制造方法 |
CN105097540B (zh) * | 2014-05-21 | 2018-07-24 | 北大方正集团有限公司 | 平面vdmos器件的制造方法 |
WO2016049992A1 (zh) * | 2014-09-29 | 2016-04-07 | 无锡华润华晶微电子有限公司 | 一种垂直双扩散金属氧化物半导体场效应管及其制作方法 |
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