CN101360844A - Sputtering target, sputtering target material and process for producing these - Google Patents
Sputtering target, sputtering target material and process for producing these Download PDFInfo
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- CN101360844A CN101360844A CNA200680051021XA CN200680051021A CN101360844A CN 101360844 A CN101360844 A CN 101360844A CN A200680051021X A CNA200680051021X A CN A200680051021XA CN 200680051021 A CN200680051021 A CN 200680051021A CN 101360844 A CN101360844 A CN 101360844A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Provided is a sputtering target capable of reducing arcing with enhanced effectiveness, a sputtering target material suitable therefor, and a process for producing these. There is provided a sputtering target material having been cut machined in the presence of oil contents, characterized in that the thickness of oil film adhering to the surface of target material before sputtering is 1.5 nm or less. Further, there is provided a sputtering target characterized by including the above sputtering target material and a backing plate. Still further, there are provided a process for producing a sputtering target material, and process for producing a sputtering target, characterized by having the cleaning step of bringing steam into contact with a surface of target material, thereby cleaning the surface of target material.
Description
Technical field
The present invention relates to sputtering target, sputtering target material and manufacture method thereof.More specifically be to relate to the sputtering target that can reduce arc-over effectively, the sputtering target material that is applicable to described sputtering target and their manufacture method.
Background technology
People know, attached to the target material surface of sputtering target, produce the reason of arc-over when especially being sputter attached to the foreign matters such as grinding powder on the face that is used for sputter (sputter face).If arc-over often takes place, will cause the part of target to dissolve and to all the winds disperse, generation is called as the foam that disperses of splash (splash) attached to the phenomenon on substrate and the film forming film, and becomes and cause the one of the main reasons that film forming qualification rate reduces, cost is high.
So far people have attempted the method for multiple removal attached to the grinding powder on the target as sputter face.For example pasting method of peelling off again behind the adhesive tape and the method (with reference to patent documentation 1) of using multiple vibration ultrasonic cleaning target on the sputter face of target, and the method (with reference to patent documentation 2) etc. of spraying the water of specified pressure to target.
But from the viewpoint of the film forming qualification rate of further raising, the effect of the inhibition arc-over of realizing by these methods is also insufficient, and expectation exploitation always can more effectively reduce the method that arc-over takes place.
; in the inject process of using the grinding material; might cause on the sputter face of grinding material attached to target; perhaps even cause infringements such as fine crackle and damage; in addition; in making target and etch processes that etching reagent contacts, the surface composition of target can change, and might exert an influence to the rerum natura of film forming film.
But the machining on the surface of metal targets and alloy target material is normally undertaken by milling cutter and lathe.In this case since when cutting use cutting wet goods oil content, thereby can residual machining oil on the target material surface after the just machining.Therefore, usually after machining, take with the surface of organic solvent wiping target etc.
Patent documentation 1: Japanese kokai publication hei 11-117062 number
Patent documentation 2: TOHKEMY 2005-42169 number
Summary of the invention
The objective of the invention is to, provide and more effectively to reduce sputtering target, the sputtering target material that is applicable to described sputtering target and the manufacture method thereof that the arc-over phenomenon takes place.
The present inventor has found, after processing with organic solvent wiping target material surface, the micro-oil content that also remains on the target material surface after the machining is the one of the main reasons that arc-over takes place, if steam is contacted with target material surface to be cleaned, just can remove this oil content effectively and more effectively reduce the generation of arc-over, thereby finish the present invention.
That is, the present invention relates to following item.
Sputtering target material involved in the present invention is the sputtering target material that has carried out machining under the situation that oil content exists, it is characterized in that, attached to the oil film thickness on the target material surface before the sputter smaller or equal to 1.5nm.
Described target is preferably metal targets or alloy target material.
And sputtering target involved in the present invention is characterized in that, comprises described sputtering target material and backing plate.
In addition, the manufacture method of sputtering target material involved in the present invention and the manufacture method of sputtering target is characterized in that, have the surface that makes steam contact target, to clean the matting of this target material surface.
Described matting is preferably, the steam of temperature more than 40 ℃ contacted more than 3 seconds with the described target material surface of every 100mm * 100mm, thus the operation of cleaning this target material surface.
In addition, described steam is preferably, and comprises any in water, organic solvent and their mixture.
And described target is preferably, and has carried out the metal targets or the alloy target material of machining under the situation that oil content exists.
Sputtering target material of the present invention by removing as much as possible attached to its lip-deep oil content, thereby has reduced the thickness of oil film.Therefore, according to the sputtering target with this sputtering target material, the generation of the arc-over in the time of just can more effectively reducing sputter consequently can suppress the generation of splash, significantly improves film forming qualification rate.
In addition, according to the manufacture method of sputtering target material of the present invention, even the target that oil content adheres to also can be removed this oil content as much as possible and obtain clean sputtering target material.And, owing to be used to remove the clean of oil content, only need steam short-time contact target material surface is got final product, and do not need special equipment, so can make high-quality sputtering target material with low-cost and high efficiency.
In addition, manufacture method according to sputtering target of the present invention, even under the situation that oil content exists, have the sputtering target of the target that has carried out machining, also can remove oil content as much as possible attached to this target material surface, thereby can further reduce the generation of arc-over, outstanding sputtering target can be provided.And, owing to be used to remove the clean of oil content, only need steam short-time contact target material surface is got final product, and do not need special equipment, so can make high-quality sputtering target with low-cost and high efficiency.
Description of drawings
Fig. 1 is attached to the synoptic diagram that concerns between oil film thickness on the target and the arc-over frequency.
Embodiment
Below the present invention is specifically described.
At first sputtering target material of the present invention and sputtering target are described, then the manufacture method of sputtering target material of the present invention and the manufacture method of sputtering target are described.
＜sputtering target material and sputtering target 〉
Sputtering target material of the present invention is the sputtering target material that has carried out machining under the situation that oil content exists, it is characterized in that, attached to the oil film thickness on the target material surface before the sputter smaller or equal to 1.5nm.
Opinion according to the present inventor, on the surface of the sputtering target material that has carried out machining under the situation that oil content exists by milling cutter and lathe etc., even handle through wiping with organic solvent, oil content that also can residual minim, this oil content forms and adhered to thickness is the oil film of 3.5～4.5nm degree.
Though by removing this oil content as much as possible, make the thickness of oil film thin more, just can reduce the frequency of arc-over more, but in fact being difficult to make its thickness is 0nm, from suppressing the viewpoint of splash, the thickness of oil film is generally below the 1.5nm, is preferably that 1.0nm is following to get final product.In addition, though be not particularly limited the lower value of oil film thickness, can be greater than 0nm.
And the thickness of oil film is meant in the present invention, utilizes the detection peak position (maximum value) of the carbon of glow discharge luminescence analysis (GDS) device mensuration.
In the part that forms oil film, what especially become problem is actual in the sputter face of the target of sputter, and preferably the oil film thickness with this sputter face is reduced to below the above-mentioned numerical value.
As being implemented the target that under the situation that oil content exists, has carried out machining, comprise metal targets or alloy target material.Because these targets are carried out machining by milling cutter and lathe etc., thereby in its surface can residual oil content, and form oil film.
Specifically comprise as metal targets: for example Mo, Al, Ti, Ta, Cr, W, Ni, Cu, Ag, Au, Pt, Fe, Co, Mg etc.And, specifically comprise as alloy target material: for example Al-Mg, Al-Ti, Ni-Fe, Ni-Cr, Fe-Co, Fe-Ta, Co-Cr, Co-Cr-Pt, Co-Zr, Co-Pt, Pt-Mn, Ir-Mn, Ti-W etc.Wherein,, relatively be easy to generate splash, therefore can show effect of the present invention significantly because Al target fusing point is low.
In addition, sputtering target of the present invention except above-mentioned target, also comprises the backing plate as cooling plate, and then also can have welding material layer as required.
Backing plate can use the backing plate of common sputtering target, but from the good viewpoint of thermal conductivity, can use the backing plate of copper and copper alloy system.In addition, its shape can be known shape also, there is no particular restriction.
The welding material can suitably be selected from known welding material and use as required according to the combination of target and backing plate.As the welding material, specifically comprise the welding material that is called as In scolding tin, for example In such as In-Sn, In-Pb, In-Ag, In-Zn are alloy, In.Wherein, because of good operability is extensively utilized In, therefore preferred In.
In addition, utilize the manufacture method of sputtering target material and the manufacture method of sputtering target, can be fit to make above-mentioned sputtering target material and sputtering target with following specific matting.
The manufacture method of＜sputtering target material, the manufacture method of sputtering target 〉
The manufacture method of sputtering target material of the present invention and the manufacture method of sputtering target is characterized in that, have the surface that makes steam contact target, to clean the matting of this target material surface.Operation except this matting can adopt and the manufacture method of known sputtering target material or sputtering target and the identical operation of creating conditions, and it is not had particular restriction.
Particularly, for example can cast, after the plastic working vacuum dissolution method of carrying out mechanical mill again by behind air dissolves or the vacuum dissolving raw material; After raw material powder being passed through shapings such as HP method (pressure sintering), HIP method (hot isostatic pressing method) or CIP method (isostatic cool pressing method), the powder metallurgic method of carrying out sintering, plastic working again; And with raw materials melt, prepared after the precast body by reaction-injection moulding, carry out the method for plastic working, mechanical mill etc. again, thereby make target.
In the manufacture method of the manufacture method of sputtering target material of the present invention and sputtering target,, the various targets that utilize these currently known methods manufacturings are cleaned by above-mentioned matting.
More specifically, comprise ITO metal oxide target, metal targets or alloy target materials etc. such as (Indium-Tin Oxide) as above-mentioned target.In addition, the concrete example of metal targets, alloy target material is aforesaid example.
In these targets, if under the situation that oil content exists, carried out the target of machining, then can more clearly bring into play effect of the present invention, so preferred this target.From this viewpoint, preferred metal targets or the alloy target material that generally under the situation that oil content exists, often carries out machining that use.And, even in the middle of metal targets, also because Al target fusing point is low and relatively be easy to generate splash, thereby remarkable performance effect of the present invention easily, be fit to be applied to the present invention.
In the matting in the manufacture method of sputtering target material manufacture method of the present invention and sputtering target, contact any one target material surface by making steam, thereby clean this target material surface.Therefore, the manufacture method of sputtering target material of the present invention and the manufacture method of sputtering target also have the one side of the purging method that can be used as existing target or sputtering target.
The steam that uses in above-mentioned matting can produce by known method, and its method be there is no particular restriction.For example be included in the liquid of filling in the container as steam feed, under any one state of pressurization, normal pressure or decompression, the method by routine heats, thereby produces the method etc. of steam.And as the liquid of steam feed, require with the state of steam with after target contact, except can from the quick removal of target, also possessing easy handling,, preferably contain in water, organic solvent and their mixture any one from this viewpoint.Wherein, can dissolve oil content from self, and the viewpoint that can expect the removal efficient of raising oil content is seen, the liquid that more preferably contains organic solvent, if consider the easiness of security and operation, the more preferably mixing solutions of organic solvent and water then, the mixing solutions of especially preferred water miscible organic solvent and water.
Water preferably uses the water through refining steps such as distilled water, ion exchanged water, Purified Waters.Comprise as organic solvent: carbonatomss such as ethanol, propyl alcohol, Virahol are water miscible organic solvents such as 2～5 lower alcohol, acetone, vinyl acetic monomer; Non-water-soluble organic solvents such as toluene, hexane, sherwood oil, ethylene glycol.
The blending ratio of organic solvent and water according to the organic solvent that uses and different, but will be set as the following mixing solutions of Lower Explosive Limit.For example adopting under the situation of ethanol as organic solvent, can be set as the aqueous solution of 1～4.3vol% usually.
The pressure of steam when target material surface sprays that produces is not had particular restriction, take into account and be cleaned the distance of the target material surface of thing, can suitably adopt the currently known methods of the vapor temperature that can reach following.
Vapor temperature when arrival is cleaned the target material surface of thing, usually can be more than the room temperature (25 ℃), but from heating oil content to improve its removal effect, and further reduce the thickness of oil film, effectively suppressing the viewpoint of arc-over generation sees, be preferably more than 40 ℃, more preferably more than 60 ℃, most preferably be more than 70 ℃.The upper limit of the vapor temperature when arrival is cleaned the target material surface of thing does not have particular restriction, if consider the removal efficient of oil content then high temperature is better., if consider the removal efficient of oil content and the equilibrium between the cost, then be generally below 90 ℃.And the arrival temperature of this steam, be to obtain from the vapor temperature that vapor injection port arrives the place of each predetermined distance by thermometer measure in advance.
Distance between the jet orifice of the target material surface that is cleaned thing and steam is not had particular restriction, and the distance that can reach above-mentioned vapor temperature gets final product, and is generally about 20mm～200mm.
And the present invention is preferably, and the steam of said temperature is generally continued to contact more than 3 seconds with the above-mentioned target material surface of every 100mm * 100mm, preferably makes it continue contact more than 6 seconds.The time that makes steam continue contact there is not the upper limit, if but consider the removal efficient of oil content and the balance between the working efficiency, be generally just enough below 60 seconds.
In addition, be preferably, after above-mentioned matting, drying process be set from the viewpoint of production efficiency, will be by steam cooling and the agglomerative drop is removed from target material surface energetically.Drying means in drying process and condition thereof can not have particular restriction according to known method and condition.The preferred use for example blows to the pressurized air after room temperature or the heating gas blower, drying machine of the target that passes through matting etc.
And in the manufacture method of sputtering target of the present invention, the arbitrary time before and after target is engaged with backing plate can be carried out above-mentioned matting (be provided with under the situation of drying process and be matting and drying process).Wherein, when behind joint, carrying out matting, because of preventing that in the joint operation of target and backing plate new oil content and dust etc. are attached on the target material surface after cleaning, so preferred.
For the method for joining of target and backing plate, can suitably adopt known method.Backing plate can adopt the backing plate of common sputtering target, but from the good viewpoint of thermal conductivity, can use the backing plate of copper and copper alloy system.And its shape also can be known shape, not particular restriction.
Joint for target and backing plate does not have particular restriction, but from cost and productive viewpoint, the preferred method that engages by welding materials such as In scolding tin of using.Particularly, by the temperature more than the fusing point that the target before the machining or after the machining is heated to In scolding tin, and under the state that keeps this temperature, fused In scolding tin is coated on this target and junction surface backing plate, fit with backing plate then, place methods such as being cooled to room temperature while pressurizeing, thereby can engage target and backing plate.
Below, according to embodiment the present invention is carried out more specific description, but the present invention is not limited in these embodiment.
Embodiment
[embodiment 1～7]
Al target (5N (99.999%), 590 * 730 * 8tmm, the Al target of milling cutter processing will have been carried out; Sumitomo Chemical Co makes) be cut into after φ 152.4mm * 8mm size, on its sputter face, applied machining oil.To vapor generation jet apparatus (the steam cleaner JQ-25 of Toshiba; Nippon Electronics Shibaura Co., Ltd. makes) the supply ion exchanged water, make it produce steam, and the spray gun (steam hose 2mm monoblock type) and the injector head of fittings be installed to this device, the condition of being put down in writing with table 1, spray the steam that is generated from this injector head to the sputter face of above-mentioned Al target, clean.
Afterwards, utilize air gun (3kgf/cm
2) blow air from the distance of 20cm to target, removed the drop of target material surface.Then, with this target 80 ℃ of dryings 4 hours.
Utilize glow discharge luminescence analysis (GDS) device (JY-5000RF then; The hole field makes manufacturing), the oil film thickness on the sputter face that remains in dried above-mentioned Al target is measured.
In addition, with above-mentioned same method and condition, prepared and used the different Al target of Al target of GDS, this Al target is engaged with the copper backing plate by In scolding tin, thereby has made sputtering target.
Utilize this sputtering target, carry out sputter at following sputtering condition, by using μ arc-over watch-dog (manufacturing of LANDMARK TECHNOLOGY company), with the condition of arc-detection voltage 100V, big-and-middle arc energy boundary line 50mJ, medium and small arc energy boundary line 10mJ, estimated the frequency of the arc-over in the beginning sputter 30 minutes.
Its result is as shown in table 1.
＜sputtering condition 〉
Device: magnetically controlled DC sputtering device, exhaust system, cryopump, rotary pump
Attainable vacuum: 4 * 10
-4Pa
Sputtering pressure: 0.5Pa
Connect electric power: 2kW
[embodiment 8～9]
Except supply with the aqueous ethanolic solution of 3vol% to the vapor generation jet apparatus, spray outside the steam that produces to the sputter face of target with the condition shown in the table 1, carry out 1～7 identical operations, and carried out identical evaluation with embodiment.
Its result is as shown in table 1.
[reference example 1～2]
Except with the condition shown in the table 1 to the sputter face uperize of target, carry out the cleaning identical, and carried out identical evaluation with embodiment 1～7.
Its result is as shown in table 1.
[comparative example 1]
Except on the sputter face of Al target, applying after the machining oil, uperize not, and utilize outside the toluene wiping target, carry out 1～7 identical operations, and carried out identical evaluation with embodiment.
Its result is as shown in table 1.
[comparative example 2]
Except on the sputter face of Al target, applying after the machining oil, uperize not, and spray outside 60 seconds to the sputter face of target with the pressure of the 30MPa ion exchanged water with 15 ℃, carry out 1～7 identical operations, and carried out identical evaluation with embodiment.
Its result is as shown in table 1.
[comparative example 3]
After coating machining oil on the sputter face of Al target, uperize not, and with the pressure of 30MPa with 15 ℃ ion exchanged water from the distance of 50mm outside the sputter face of target is sprayed, carry out 1～7 identical operations, and carried out identical evaluation with embodiment.
Its result is as shown in table 1.
[comparative example 4]
Except on the sputter face of Al target, applying after the machining oil, uperize not, and Ultrasonic Cleaners (UT-205S by utilizing ion exchanged water; Sharp Corp makes, peak power output: 200W), and will export level set be 80%, carried out with 35kHz carrying out 1～7 identical operations with embodiment, and having carried out identical evaluation outside 30 minutes the ultrasonic cleaning processing.
Its result is as shown in table 1.
[comparative example 5]
Except on the sputter face of Al target, applying after the machining oil, uperize not, and Ultrasonic Cleaners (UT-205S by having utilized the 99.5vol% aqueous ethanolic solution; Sharp Corp's system, peak power output: 200W), and will to export level set be 80%, the ultrasonic cleaning of target having been carried out 10 minutes with 35kHz is carried out 1～7 identical operations with embodiment, and has been carried out identical evaluation outside handling.
Its result is as shown in table 1.
[comparative example 6]
Except on the sputter face of Al target, applying after the machining oil, uperize not, and Ultrasonic Cleaners (UT-205S by having utilized the 99.5vol% aqueous ethanolic solution; Sharp Corp's system, peak power output: 200W), and will to export level set be 80%, the ultrasonic cleaning of target having been carried out 5 minutes with 35kHz is carried out 1～7 identical operations with embodiment, and has been carried out identical evaluation outside handling.
Its result is as shown in table 1.
[table 1]
| The arc-over frequency | Oil film thickness (nm) | Purging method and condition | |
| Embodiment 1 | 10 | 1.2 | The pure water steam flushing time: 3 second distance: 75mm temperature: 55 ℃ |
| Embodiment 2 | 8 | 0.9 | The pure water steam flushing time: 6 second distance: 50mm temperature: 65 ℃ |
| Embodiment 3 | 9 | 0.8 | The pure water steam flushing time: 10 second distance: 50mm temperature: 65 ℃ |
| Embodiment 4 | 6 | 0.7 | The pure water steam flushing time: 15 second distance: 20mm temperature: 85 ℃ |
| Embodiment 5 | 8 | 0.6 | The pure water steam flushing time: 30 second distance: 50mm temperature: 65 ℃ |
| Embodiment 6 | 7 | 0.4 | The pure water steam flushing time: 60 second distance: 30mm temperature: 75 ℃ |
| Embodiment 7 | 11 | 1.1 | The pure water steam flushing time: 6 second distance: 100mm temperature: 45 ℃ |
| Embodiment 8 | 6 | 0.5 | The alcohol vapour scavenging period: 6 second distance: 20mm temperature: 85 ℃ |
| Embodiment 9 | 18 | 1.5 | The alcohol vapour scavenging period: 6 second distance: 120mm temperature: 40 ℃ |
| Reference example 1 | 25 | 2.0 | The pure water steam flushing time: 6 second distance: 150mm temperature: 35 ℃ |
| Reference example 2 | 60 | 3.0 | The pure water steam flushing time: 6 second distance: 200mm temperature: 25 ℃ |
| Comparative example 1 | 89 | 4.0 | Utilize the toluene wiping to clean |
| Comparative example 2 | 92 | 4.0 | Pure water flowing water scavenging period: 60 second water temperature: 15 ℃ of pressure 30MPa |
| Comparative example 3 | 58 | 3.0 | The pure water high pressure cleaning time: 60 second distance: 50mm water temperature: 15 ℃ of pressure: 30MPa |
| Comparative example 4 | 15 | 1.6 | The pure water ultrasonic cleaning time: 30 minutes |
| Comparative example 5 | 30 | 1.9 | The ethanol ultrasonic cleaning time: 10 minutes |
| Comparative example 6 | 34 | 2.5 | The ethanol ultrasonic cleaning time: 5 minutes |
*In the table 1, pure water is meant ion exchanged water, and the time of each steam flushing is meant the duration of contact of every 100mm * 100mm target, and temperature is meant the arrival temperature of steam.
Can be clear and definite according to table 1, under the situation of cleaning to the target uperize, the removal effect of oil content all is higher than the toluene wiping of comparative example 1 and cleans.In addition, can find out that if the arrival temperature of steam is more than 40 ℃, and when containing organic solvent in the steam, then the removal effect of oil content is higher, can significantly improve to suppress the effect that arc-over takes place by embodiment 1～9.
On the other hand, can found out in the utilization of comparative example 2 that the flowing water of ion exchanged water cleans and during the high pressure water of comparative example 3 cleaned, although carried out the processing in 60 seconds, but the removal effect of oil content was lower, can not suppress arc-over effectively.
In addition, in the ultrasonic cleaning of comparative example 4～6, though the inhibition effect that the removal effect of oil content and arc-over take place is approved that compare with steam flushing, its treatment time will be grown 5～10 minutes, production efficiency is lower.And, carry out the groove that ultrasonication need be flooded target, be difficult to large-scale target is cleaned, in addition, under situation with an organic solvent, owing to need supply with a large amount of organic solvents to groove, and not preferred from the viewpoint of safety and environment.To this, as long as steam flushing makes steam short-time contact target material surface, it is outstanding to have production efficiency, and has the advantage that gets final product on a small quantity under situation with an organic solvent.
And,, will as shown in Figure 1, have tangible dependency between the two attached to the oil film thickness on the target and arc-over frequency as diaxon and investigate its relation according to the data shown in the table 1.
Claims (13)
1, a kind of sputtering target material is the sputtering target material that has carried out machining under the situation that oil content exists, it is characterized in that, attached to the oil film thickness on this target material surface before the sputter smaller or equal to 1.5nm.
2, sputtering target material as claimed in claim 1 is characterized in that, described target is metal targets or alloy target material.
3, a kind of sputtering target is characterized in that, has claim 1 or 2 described sputtering target material and backing plates.
4, a kind of manufacture method of sputtering target material is characterized in that, has the matting that steam is contacted with the surface of target and cleans this target material surface.
5, the manufacture method of sputtering target material as claimed in claim 4 is characterized in that, described matting is, the steam of temperature more than 40 ℃ is contacted more than 3 seconds with the described target material surface of every 100mm * 100mm, thus the operation of cleaning this target material surface.
As the manufacture method of claim 4 or 5 described sputtering target materials, it is characterized in that 6, described steam pockets is moisture, any in organic solvent and their mixture.
As the manufacture method of claim 4 or 5 described sputtering target materials, it is characterized in that 7, described target is metal targets or the alloy target material that has carried out machining under the situation that oil content exists.
8, the manufacture method of sputtering target material as claimed in claim 6 is characterized in that, described target is metal targets or the alloy target material that has carried out machining under the situation that oil content exists.
9, a kind of manufacture method of sputtering target is characterized in that, has the matting that steam is contacted with the surface of target and cleans this target material surface.
10, the manufacture method of sputtering target as claimed in claim 9 is characterized in that, described matting is, the steam of temperature more than 40 ℃ is contacted more than 3 seconds with the described target material surface of every 100mm * 100mm, thus the operation of cleaning this target material surface.
As the manufacture method of claim 9 or 10 described sputtering targets, it is characterized in that 11, described steam pockets is moisture, any in organic solvent and their mixture.
As the manufacture method of claim 9 or 10 described sputtering targets, it is characterized in that 12, described target is metal targets or the alloy target material that has carried out machining under the situation that oil content exists.
13, the manufacture method of sputtering target as claimed in claim 11 is characterized in that, described target is metal targets or the alloy target material that has carried out machining under the situation that oil content exists.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006028881 | 2006-02-06 | ||
| JP028881/2006 | 2006-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101360844A true CN101360844A (en) | 2009-02-04 |
Family
ID=38344958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA200680051021XA Pending CN101360844A (en) | 2006-02-06 | 2006-10-18 | Sputtering target, sputtering target material and process for producing these |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5065915B2 (en) |
| KR (1) | KR101032049B1 (en) |
| CN (1) | CN101360844A (en) |
| TW (1) | TW200730653A (en) |
| WO (1) | WO2007091351A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104694887A (en) * | 2013-12-09 | 2015-06-10 | 财团法人金属工业研究发展中心 | Coating equipment |
| CN107761064A (en) * | 2016-08-15 | 2018-03-06 | 合肥江丰电子材料有限公司 | The processing method of copper target material |
| CN110885963A (en) * | 2019-10-09 | 2020-03-17 | 安泰天龙钨钼科技有限公司 | Tungsten-nickel alloy target material and preparation method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5611886B2 (en) * | 2011-04-19 | 2014-10-22 | Jx日鉱日石金属株式会社 | Laminated structure and manufacturing method thereof |
| JP5902333B1 (en) * | 2015-02-27 | 2016-04-13 | Ｊｘ金属株式会社 | Sputtering target and manufacturing method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6462463A (en) * | 1987-09-01 | 1989-03-08 | Seiko Epson Corp | Method for cleaning sputtering target |
| JPH06256984A (en) * | 1993-12-21 | 1994-09-13 | Mitsubishi Kasei Corp | Washing device for object stained with oil |
| JP4270971B2 (en) * | 2003-07-24 | 2009-06-03 | 三井金属鉱業株式会社 | Manufacturing method of sputtering target |
| JP4213611B2 (en) * | 2004-03-18 | 2009-01-21 | 日鉱金属株式会社 | ITO sputtering target |
-
2006
- 2006-10-18 JP JP2007557738A patent/JP5065915B2/en not_active Expired - Fee Related
- 2006-10-18 WO PCT/JP2006/320716 patent/WO2007091351A1/en active Application Filing
- 2006-10-18 KR KR1020087019208A patent/KR101032049B1/en not_active IP Right Cessation
- 2006-10-18 CN CNA200680051021XA patent/CN101360844A/en active Pending
- 2006-11-07 TW TW095141087A patent/TW200730653A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104694887A (en) * | 2013-12-09 | 2015-06-10 | 财团法人金属工业研究发展中心 | Coating equipment |
| CN107761064A (en) * | 2016-08-15 | 2018-03-06 | 合肥江丰电子材料有限公司 | The processing method of copper target material |
| CN110885963A (en) * | 2019-10-09 | 2020-03-17 | 安泰天龙钨钼科技有限公司 | Tungsten-nickel alloy target material and preparation method thereof |
| CN110885963B (en) * | 2019-10-09 | 2022-03-04 | 安泰天龙钨钼科技有限公司 | Tungsten-nickel alloy target material and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2007091351A1 (en) | 2007-08-16 |
| JPWO2007091351A1 (en) | 2009-07-02 |
| KR20080088627A (en) | 2008-10-02 |
| TW200730653A (en) | 2007-08-16 |
| JP5065915B2 (en) | 2012-11-07 |
| KR101032049B1 (en) | 2011-05-02 |
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