CN101246895A - 光电装置与互补式金属氧化物半导体影像感测器的芯片级封装 - Google Patents
光电装置与互补式金属氧化物半导体影像感测器的芯片级封装 Download PDFInfo
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Abstract
本发明提供一种光电装置与互补式金属氧化物半导体影像感测器的芯片级封装。该光电装置的芯片级封装包含:基板,该基板用于芯片级封装,作为支撑基板;具有导线的半导体装置,固定于该基板之上;玻璃封装盖,用以封装该半导体装置,其中该玻璃封装盖具有环绕开口的围堤结构;以及,封装层,配置于该围堤结构与该基板之间,以将该基板及该玻璃封装盖结合在一起。本发明能够减少工艺步骤,降低工艺复杂度及成本,并提升成品率,此外还可减少封装结构尺寸,增加工艺稳定性。
Description
技术领域
本发明涉及一种光电装置的芯片级封装,特别涉及一种CMOS影像感测器的芯片级封装。
背景技术
微电子成像元件被广泛应用在数字摄影机(相机)、具有影像储存能力的无线装置、或其他用途上。举例来说,像具有微电子成像功能的移动电话或个人数字助理(PDA),可用来获取或传送数字影像。随着高影像质量及小尺寸的影像显示装置的发展,市场对于具有微电子成像元件的电子装置的需求,也在稳定增加中。
微电子成像元件所包含的影像感测器,一般可分为电荷耦合元件(CCD)系统或互补式金属氧化物半导体(CMOS)系统。电荷耦合元件的影像感测器广泛的被使用在数字相机上,而互补式金属氧化物半导体影像感测器也由于其低成本、高成品率、小体积、与半导体工艺技术及装置的高相容性等优点,广为市场所接受。此外,互补式金属氧化物半导体影像感测器在制造的过程中可同时封装其易构成组件并提供额外的电性连接。
美国专利编号6,777,767的专利揭示一种半导体元件的封装方法,请参照图1a~1e。在图1a中,光阻层12形成于透明基板10之上。接着,请参照图1b,利用掩模图案化该光阻层12以形成多个间隔物14,该间隔物例如可为中空的四边形柱,如图2所示。此外,图1b为沿图2中A-A’虚线的剖面图。
请参照图1c,提供支撑基板20,该支撑基板20其上已形成有光电微结构单元19及接触垫(未图示),并将粘合剂16涂布至该间隔物14之间及其侧壁。接着,请参照图1d,将该透明基板10作为封装盖,置于该支撑基板20上。如图所示,由于该间隔物14的区隔,因此在该透明基板10及该支撑基板20之间构成了空腔18,而该光电微结构单元19配置于该空腔18中。最后,请参照图1e,利用背板研磨方式将该支撑基板20薄形化。
由上述可知,传统封装光电微结构单元的方法,不但工艺步骤繁复,且增加工艺成本。上述方法由于必需利用一道额外的光刻蚀刻步骤,才可将该光阻层12图案化成多个间隔物14,以定义出该空腔18。因此,若能直接形成间隔物14于基板10上,除了能大幅降少工艺步骤(省去形成光阻层及一道光刻蚀刻步骤),也能同时增加成品率及降低制造成本。
此外,传统光电微结构单元的封装结构的厚度,除了透明基板10及支撑基板20的厚度外,也必需考虑到间隔物14的厚度H。若封装结构的厚度增大,则会进一步限制到未来光电产品(移动电话或个人数字助理)的设计及实用性。因此,降低光电微结构单元的封装结构的厚度,也为目前光电装置的芯片级封装技术上急需研究的重点之一。
发明内容
有鉴于此,本发明的目的为提供一种光电装置的芯片级封装结构及一种互补式金属氧化物半导体影像感测器的芯片级封装结构,以符合芯片级封装技术市场的需求。
为达成本发明的目的,该光电装置的芯片级封装结构包含:基板,该基板用于芯片级封装,作为支撑基板;具有导线的半导体装置,固定于该基板之上;玻璃封装盖,用以封装该半导体装置,其中该玻璃封装盖具有环绕开口的围堤结构;以及封装层,配置于该围堤结构与该基板之间,以将该基板及该玻璃封装盖结合在一起。
上述光电装置的芯片级封装中,该围堤结构及该开口可用体型细微加工技术形成。
上述光电装置的芯片级封装中,该围堤结构的侧壁的剖面可为直线。
上述光电装置的芯片级封装中,该围堤结构的侧壁的剖面可为锯齿形。
上述光电装置的芯片级封装中,该开口可为四边形。
上述光电装置的芯片级封装中,该开口可为多边形。
上述光电装置的芯片级封装中,该封装层可为粘合剂层。
上述光电装置的芯片级封装中,该封装层可为含硅的膜层,而该基板与该围堤可用阳极接合方式结合。
上述光电装置的芯片级封装中,该封装层可为金属层,而该基板与该围堤结构可用共晶接合方式形成。
上述光电装置的芯片级封装中,该围堤结构、该基板及该封装盖构成空腔。
根据的本发明另一佳较实施例,本发明也提供一种互补式金属氧化物半导体影像感测器的芯片级封装结构,包含:基板,该基板用于芯片级封装,作为支撑基板;具有导线的互补式金属氧化物半导体影像感测器,固定于基板之上;玻璃封装盖,用以封装该互补式金属氧化物半导体影像感测器,其中该玻璃封装盖具有环绕开口的围堤结构;以及封装层,配置于该围堤结构与该基板之间,以将该基板及该玻璃封装盖结合在一起。
上述互补式金属氧化物半导体影像感测器的芯片级封装中,该围堤结构及该开口可用体型细微加工技术形成。
上述互补式金属氧化物半导体影像感测器的芯片级封装中,该开口可为四边形。
上述互补式金属氧化物半导体影像感测器的芯片级封装中,该开口可为多边形。
上述互补式金属氧化物半导体影像感测器的芯片级封装中,该围堤结构、该基板及该封装盖构成空腔。
本发明能够减少工艺步骤,降低工艺复杂度及成本,并提升成品率,此外还可减少封装结构尺寸,增加工艺稳定性。
为使本发明的上述目的、特征能更明显易懂,下文特举较佳实施例,并配合附图,作详细说明如下:
附图说明
图1a至图1e为一系列的剖面示意图,显示现有技术半导体元件封装方法的流程。
图2为图1b的示意图。
图3a至图3m为一系列的剖面示意图,显示本发明所述光电装置芯片级封装方法的流程。
图4为图3b的示意图
其中,附图标记说明如下:
10~透明基板;12~光阻层;14~间隔物;19~光电微结构单元;20~支撑基板;18~空腔;100~玻璃基板;101~围堤结构;102~开口;103~封装层;104~侧壁;110~支撑基板;111~半导体装置;112~空腔;110a~较薄的支撑基板;110b~各自分离的基板;113~环氧化物层;114~底封装层;113a~各自分离的环氧化物层;114a~各自分离的底封装层;115~电性接触垫;116~接触凸块;117~切割线;120~集成电路装置;150~玻璃封装盖;以及,H~厚度。
具体实施方式
以下,请参照显示符合本发明所述影像显示系统较佳实施例的附图。
请参照图3a-图3m,其为一系列剖面结构示意图,显示本发明所述的互补式金属氧化物半导体影像感测器的芯片级封装结构的制造方法的一较佳实施例。
首先,请参照图3a,提供玻璃基板100。接着,请参照图3b,对该玻璃基板100进行一体型细微加工,以形成具有开口102及围堤结构101的玻璃封装盖150,其中该围堤结构101环绕该开口102。请参照图4,为该玻璃封装盖150的示意图,此外,图3b为图4沿B-B’虚线的剖面图。由图中可知,该围堤结构101的侧壁104的剖面为直线,而该开口为四边形。在本发明另一较佳实施例中,该围堤结构101的侧壁104的剖面也可以为锯齿状,且该开口102可以为多边形。值得注意的是,该围堤结构101的高度可介于10μm至200μm之间。
请参照图3c,形成封装层于该围堤结构101上及支撑基板110间,其中该支撑基板110可为镜片等级玻璃或是石英。该支撑基板110有具有导线的半导体装置111固定于其上。举例来说,该半导体装置111例如可为互补式金属氧化物半导体影像感测装置,以倒装方式形成于支撑基板110上。该互补式金属氧化物半导体影像感测装置包含具有微透镜(作为影像平台)的感测器。
请参照图3d,利用该封装层103,将该玻璃封装盖150固定于该支撑基板110之上,以封合该互补式金属氧化物半导体影像感测器于空腔112中。该封装层可为粘合剂层。此外,该封装层也可为含硅的膜层,而该基板110与该围堤101使用阳极接合方式固合。再者,该封装层为例如金、锡或其合金制成的金属层,而该基板与该围堤结构使用共晶接合方式形成。
接着,将该支撑基板110以研磨方式薄形化,以形成较薄的支撑基板110a,请参照图3e。
接着,利用蚀刻方式定义出各自分离的基板110b,请参照图3f。接着,在蚀刻后,利用环氧化物层113将这些各自分离的基板110b固定在底封装层114,如图3g及图3h所示。
请参照图3i,利用机械方式刻出凹槽,以分割该环氧化物层113及底封装层114,从而得到各自分离的环氧化物层113a及底封装层114a。接着,请参照图3j,形成电性接触垫115于各自分离的环氧化物层113a及底封装层114a上,并将该电性接触垫115与该半导体装置111的导线电性连接。接着,请参照图3k,形成电性接触凸块116于该电性接触垫115之上。最后,将上述结构沿着切割线117切割,并进行分离处理,产生多个已封装完成的集成电路装置120,如图31及图3m所示。
综上所述,本发明以该玻璃封装盖的围堤结构,取代现有技术额外形成的间隔物,与该支撑基板形成空腔。由于该具有围堤结构的玻璃封装盖可事先以体型细微技术对玻璃基板进加工来获得,不需在制造过程额外形成一层光阻,也不需利用额外的光刻蚀刻步骤来图案化光阻层,以形成间隔物。如此一来,可减少工艺步骤,降低工艺复杂度及成本,并提升成品率。此外,由于本发明利用玻璃封装盖本身的围堤结构来取代间隔物,因此所得元件的封装结构厚度仅为玻璃封装盖及支撑基板的厚度之和,可节省掉间隔物的厚度。再者,该玻璃封装盖的围堤结构由于是由玻璃制成的,在加工上也比传统的高分子材料容易,因此也增加了工艺的稳定性。
虽然本发明已用较佳实施例揭示如上,然而其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,应可作各种改动与修改,因此本发明的保护范围应以所附权利要求范围为准。
Claims (15)
1. 一种光电装置的芯片级封装,包含:
基板,该基板用于芯片级封装,作为支撑基板;
具有导线的半导体装置,固定于该基板之上;
玻璃封装盖,用以封装该半导体装置,其中该玻璃封装盖具有环绕开口的围堤结构;以及
封装层,配置于该围堤结构与该基板之间,以将该基板及该玻璃封装盖结合在一起。
2. 如权利要求1所述的光电装置的芯片级封装,其中该围堤结构及该开口是用体型细微加工技术形成的。
3. 如权利要求1所述的光电装置的芯片级封装,其中该围堤结构的侧壁的剖面是直线。
4. 如权利要求1所述的光电装置的芯片级封装,其中该围堤结构的侧壁的剖面是锯齿形。
5. 如权利要求1所述的光电装置的芯片级封装,其中该开口为四边形。
6. 如权利要求1所述的光电装置的芯片级封装,其中该开口为多边形。
7. 如权利要求1所述的光电装置的芯片级封装,其中该封装层为粘合剂层。
8. 如权利要求1所述的光电装置的芯片级封装,其中该封装层为含硅的膜层,而该基板与该围堤使用阳极接合方式结合。
9. 如权利要求1所述的光电装置的芯片级封装,其中该封装层为金属层,而该基板与该围堤结构使用共晶接合方式形成。
10. 如权利要求1所述的光电装置的芯片级封装,其中该围堤结构、该基板及该封装盖构成空腔。
11. 一种互补式金属氧化物半导体影像感测器的芯片级封装,包含:
基板,该基板用于芯片级封装,作为支撑基板;
具有导线的互补式金属氧化物半导体影像感测器固定于基板之上;
玻璃封装盖,用以封装该互补式金属氧化物半导体影像感测器,其中该玻璃封装盖具有围堤结构,环绕开口;以及
封装层,配置于该围堤结构与该基板之间,以将该基板及该玻璃封装盖结合在一起。
12. 如权利要求11所述的互补式金属氧化物半导体影像感测器的芯片级封装,其中该围堤结构及该开口是用体型细微加工技术形成的。
13. 如权利要求11所述的互补式金属氧化物半导体影像感测器的芯片级封装,其中该开口为四边形。
14. 如权利要求11所述的互补式金属氧化物半导体影像感测器的芯片级封装,其中该开口为多边形。
15. 如权利要求11所述的互补式金属氧化物半导体影像感测器的芯片级封装,其中该围堤结构、该基板及该封装盖构成空腔。
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CN102444874A (zh) * | 2010-10-07 | 2012-05-09 | 台湾积体电路制造股份有限公司 | Led灯条模块的连接器与散热器的组装与其形成方法 |
CN103400807A (zh) * | 2013-08-23 | 2013-11-20 | 苏州晶方半导体科技股份有限公司 | 影像传感器的晶圆级封装结构及封装方法 |
US10574209B2 (en) | 2014-10-24 | 2020-02-25 | Semiconductor Manufacturing International (Shanghai) Corporation | Wafer level packaging approach for semiconductor devices |
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IL133453A0 (en) * | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
TWI480935B (zh) * | 2008-12-24 | 2015-04-11 | Nanchang O Film Optoelectronics Technology Ltd | 將玻璃黏著在影像感測器封裝體中之技術 |
US8138062B2 (en) * | 2009-12-15 | 2012-03-20 | Freescale Semiconductor, Inc. | Electrical coupling of wafer structures |
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JP6593669B2 (ja) * | 2013-09-12 | 2019-10-23 | 日本電気硝子株式会社 | 支持ガラス基板及びこれを用いた搬送体 |
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IL133453A0 (en) * | 1999-12-10 | 2001-04-30 | Shellcase Ltd | Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby |
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US7253397B2 (en) * | 2004-02-23 | 2007-08-07 | Micron Technology, Inc. | Packaged microelectronic imagers and methods of packaging microelectronic imagers |
JP4839747B2 (ja) * | 2005-09-20 | 2011-12-21 | 三菱電機株式会社 | 静電容量型加速度センサ |
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