CN101244945B - 基板处理装置用部件及其制造方法 - Google Patents

基板处理装置用部件及其制造方法 Download PDF

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Publication number
CN101244945B
CN101244945B CN2007101650261A CN200710165026A CN101244945B CN 101244945 B CN101244945 B CN 101244945B CN 2007101650261 A CN2007101650261 A CN 2007101650261A CN 200710165026 A CN200710165026 A CN 200710165026A CN 101244945 B CN101244945 B CN 101244945B
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CN
China
Prior art keywords
processing apparatus
substrate processing
silicon carbide
components
focusing ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007101650261A
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English (en)
Chinese (zh)
Other versions
CN101244945A (zh
Inventor
守屋刚
三桥康至
上殿明良
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of CN101244945A publication Critical patent/CN101244945A/zh
Application granted granted Critical
Publication of CN101244945B publication Critical patent/CN101244945B/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0054—Plasma-treatment, e.g. with gas-discharge plasma
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2007101650261A 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法 Expired - Fee Related CN101244945B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004-327077 2004-11-10
JP2004327077 2004-11-10
JP2004327077A JP2006140238A (ja) 2004-11-10 2004-11-10 基板処理装置用部品及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101177866A Division CN100388418C (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Publications (2)

Publication Number Publication Date
CN101244945A CN101244945A (zh) 2008-08-20
CN101244945B true CN101244945B (zh) 2013-05-29

Family

ID=36620872

Family Applications (2)

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CN2007101650261A Expired - Fee Related CN101244945B (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法
CNB2005101177866A Expired - Fee Related CN100388418C (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNB2005101177866A Expired - Fee Related CN100388418C (zh) 2004-11-10 2005-11-10 基板处理装置用部件及其制造方法

Country Status (4)

Country Link
JP (1) JP2006140238A (cg-RX-API-DMAC7.html)
KR (1) KR100735936B1 (cg-RX-API-DMAC7.html)
CN (2) CN101244945B (cg-RX-API-DMAC7.html)
TW (1) TW200634924A (cg-RX-API-DMAC7.html)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100577866C (zh) * 2007-02-27 2010-01-06 中微半导体设备(上海)有限公司 应用于等离子体反应室中的气体喷头组件、其制造方法及其翻新再利用的方法
CN101357854B (zh) * 2008-09-12 2012-07-25 西安交通大学 一种降低陶瓷热障涂层热导率的后处理方法
CN101748385B (zh) * 2008-12-22 2012-05-09 深超光电（深圳）有限公司 用于化学气相沉积(cvd)的基板处理设备
JP5415853B2 (ja) * 2009-07-10 2014-02-12 東京エレクトロン株式会社 表面処理方法
JP2012049220A (ja) * 2010-08-25 2012-03-08 Mitsui Eng & Shipbuild Co Ltd 耐プラズマ部材およびその再生方法
KR101671671B1 (ko) * 2016-05-25 2016-11-01 주식회사 티씨케이 반도체 제조용 부품의 재생방법과 그 재생장치 및 재생부품
JP6812264B2 (ja) * 2017-02-16 2021-01-13 東京エレクトロン株式会社 真空処理装置、及びメンテナンス装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
JP2004193354A (ja) * 2002-12-11 2004-07-08 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法及びシリコンウエーハ、並びにエピタキシャルウエーハ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07211700A (ja) * 1994-01-24 1995-08-11 Sumitomo Metal Ind Ltd プラズマ発生装置用電極及びその製造方法
KR0170907B1 (ko) * 1995-10-25 1999-03-30 김주용 반도체 소자의 무결함층 제조방법
KR100203129B1 (ko) 1995-12-15 1999-06-15 김영환 소오스/드레인 접합 잔류 결함 제거방법
JP3551867B2 (ja) * 1999-11-09 2004-08-11 信越化学工業株式会社 シリコンフォーカスリング及びその製造方法
US6890861B1 (en) * 2000-06-30 2005-05-10 Lam Research Corporation Semiconductor processing equipment having improved particle performance
JP2005520337A (ja) * 2002-03-12 2005-07-07 東京エレクトロン株式会社 プラズマ処理のための改良された基板ホルダ
TW200416208A (en) * 2002-11-12 2004-09-01 Bridgestone Corp Silicon carbide sintered product and method for production the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030198749A1 (en) * 2002-04-17 2003-10-23 Applied Materials, Inc. Coated silicon carbide cermet used in a plasma reactor
JP2004193354A (ja) * 2002-12-11 2004-07-08 Shin Etsu Handotai Co Ltd シリコンウエーハの熱処理方法及びシリコンウエーハ、並びにエピタキシャルウエーハ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
吴奕初等.正电子湮没技术在金属和合金研究中的应用进展.物理.2000,29(7),401-405. *

Also Published As

Publication number Publication date
CN1790615A (zh) 2006-06-21
TWI380360B (cg-RX-API-DMAC7.html) 2012-12-21
JP2006140238A (ja) 2006-06-01
CN101244945A (zh) 2008-08-20
KR20060052455A (ko) 2006-05-19
CN100388418C (zh) 2008-05-14
KR100735936B1 (ko) 2007-07-06
TW200634924A (en) 2006-10-01

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Granted publication date: 20130529

Termination date: 20201110