CN101232045A - Field effect transistor multilayer field plate device and manufacturing method thereof - Google Patents
Field effect transistor multilayer field plate device and manufacturing method thereof Download PDFInfo
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- CN101232045A CN101232045A CNA200710062987XA CN200710062987A CN101232045A CN 101232045 A CN101232045 A CN 101232045A CN A200710062987X A CNA200710062987X A CN A200710062987XA CN 200710062987 A CN200710062987 A CN 200710062987A CN 101232045 A CN101232045 A CN 101232045A
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- 230000005669 field effect Effects 0.000 title claims abstract description 6
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract 24
- 229910002601 GaN Inorganic materials 0.000 claims description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 47
- 239000002184 metal Substances 0.000 claims description 47
- 238000001704 evaporation Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 238000000206 photolithography Methods 0.000 claims description 18
- 230000008020 evaporation Effects 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 10
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 4
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 3
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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Abstract
The invention relates to the technical field of microwave power devices in semiconductor materials, and discloses a method for manufacturing an AlGaN/GaN high electron mobility field effect transistor (AlGaN/GaN HEMT) multilayer field plate device. The invention also discloses an AlGaN/GaN HEMT multilayer field plate device. The invention greatly improves the breakdown characteristic of the AlGaN/GaN HEMT device and effectively inhibits the current collapse phenomenon of the AlGaN/GaN HEMT device.
Description
Technical field
The present invention relates to microwave power device technical field in the semi-conducting material, relate in particular to a kind of aluminum-gallium-nitrogen/gallium nitride high electron mobility field-effect transistor (AlGaN/GaN HEMT) multilayer field plate device and preparation method thereof.
Background technology
Gallium nitride (GaN) is as third generation semiconductor material with wide forbidden band, with its energy gap big (3.4eV), puncture voltage height (3.3MV/cm), two-dimensional electron gas height (greater than 10
13Cm
2), saturated electrons speed is big by (2.8 * 10
7Cm/s) etc. characteristic is subjected to extensive concern in the world.
At present, the high frequency of AlGaN/GaN HEMT device, high pressure, high temperature and high-power characteristic make it that huge prospect is arranged aspect microwave power device.
For the AlGaN/GaN HEMT device of routine, common processing step as shown in Figure 1, Fig. 1 is a method flow diagram of making at present conventional AlGaN/GaN HEMT device, this method specifically may further comprise the steps:
Step 101: optical lithography forms alignment mark, evaporation mark metal;
Step 102: optical lithography source leakage graphic, and evaporating drain and source metals;
Step 103: annealing makes the source leak metal and backing material formation good Ohmic contact;
Step 104: active area isolation;
Step 105: optical lithography is made the grid line bar;
Step 106: evaporation grid metal;
Step 107: metal line;
Step 108: make air bridges;
Step 109: test analysis.
But, still have a lot of problems not solve in the AlGaN/GaN HEMT power device, two crucial problems are current collapse effect and excessive grid reverse leakage.Discover that these two phenomenons all have direct relation with the surface state of AlGaN.
In order to reduce the surface trap effect to reach the effect that suppresses current collapse, silicon nitride (SiN) is used as deielectric-coating device is carried out the passivation technology processing.The employing of passivation technology has suppressed the current collapse effect effectively, has increased the ability of device microwave power output.But, also reduced the puncture voltage of device simultaneously.
The relation of compromise current collapse and puncture voltage how is to make the major issue of AlGaN/GaN device application in the high-power field of high-frequency and high-voltage.For this reason, introduced the technology of grid connection field plate.The effect of the surface state trap between intensity grid-leakage has been played in the introducing of grid connection field plate, to play the effect that suppresses current collapse; Simultaneously, the introducing of field plate makes that the electric field between grid-leakage obtains redistribution.
Before not doing field plate, the electric field strength maximum point is positioned at the grid metal edge between grid-leakage, and the field plate between grid-leakage makes electric field strength maximum zone expand to drain terminal, and peak value reduces, and has improved the puncture voltage of device greatly.
But the adding of grid connection field plate has increased the electric capacity between grid leak, has also increased the length of depletion region simultaneously, has caused the decline of gain.In order to address this problem, the notion of source connection field plate has been proposed.In this structure, the electric capacity between field plate and raceway groove is leakage-source electric capacity, can be output matching network and absorb, and the Miller feedback capacity that grid field plate field plate structure brings has not existed yet.Therefore, the power output and the gain of device have been improved effectively simultaneously.
Summary of the invention
(1) technical problem that will solve
In view of this, one object of the present invention is to provide a kind of AlGaN/GaN HEMT multilayer field plate device, with the breakdown characteristics of raising AlGaN/GaN HEMT device, and the current collapse phenomenon of inhibition AlGaN/GaNHEMTs device.
Another object of the present invention is to provide a kind of method of the AlGaN/GaN of making HEMT multilayer field plate device, with the breakdown characteristics of raising AlGaN/GaN HEMTs device, and the current collapse phenomenon of inhibition AlGaN/GaN HEMTs device.
(2) technical scheme
For reaching an above-mentioned purpose, the invention provides a kind of AlGaN/GaN HEMT multilayer field plate device, this device comprises grid, is positioned at the source electrode and the drain electrode of grid both sides; Wherein,
Grid, source electrode and drain electrode are positioned on the backing material top layer AlGaN epitaxial loayer, form ohmic contact by annealed alloy between source electrode and AlGaN epitaxial loayer and drain electrode and the AlGaN epitaxial loayer;
Formed device surface deposit silicon nitride (SiN) deielectric-coating of grid, source electrode and drain electrode, the evaporation grid connect the figure of field plate on this layer dielectric; At the device surface that has formed deposit SiN deielectric-coating once more, evaporation source connects the figure of field plate on this layer dielectric subsequently.
Described backing material comprises Sapphire Substrate, gallium nitride GaN and AlGaN epitaxial loayer three-decker from the bottom to top successively; Wherein, Sapphire Substrate is used for the backing material as the growing GaN epitaxial loayer; The AlGaN/GaN epitaxial layer structure forms heterojunction between AlGaN epitaxial loayer and GaN epitaxial loayer, produces the two-dimensional electron gas of high concentration, and big current density and power output capacity is provided.
For reaching above-mentioned another purpose, the invention provides a kind of method of the AlGaN/GaN of making HEMT multilayer field plate device, this method is based on the AlGaN/GaN HEMT device making technics of routine, after forming the grid Metal Contact, make grid earlier and connect field plate, the making source connects field plate again, forms AlGaN/GaN HEMT multilayer field plate device.
This method specifically comprises:
A, on backing material, carry out optical lithography, form alignment mark, evaporation mark metal;
B, after evaporating the mark metal, optics photolithographic source leakage graphic on the AlGaN epitaxial loayer, and evaporating drain and source metals, high-temperature quick thermal annealing is then leaked between metal and the backing material in the source and to be formed ohmic contact, forms source electrode and drain electrode;
C, carry out ion and inject, active area is isolated;
D, the position optical lithography between source electrode on the backing material and drain electrode are made the grid line bar, and evaporation grid metal forms grid;
E, be manufactured with the substrate material surface deposit SiN deielectric-coating of source electrode, drain and gate;
F, optical lithography grid field plate figure, evaporated metal;
G, secondary deposit SiN deielectric-coating;
H, optical lithography source field plate figure, evaporated metal;
I, optical lithography metal wiring pattern, evaporated metal.
Described backing material is followed successively by AlGaN, GaN and sapphire from top to bottom.
Described backing material further comprises one deck AlN between AlGaN and GaN.
It is Ti/Al/Ti/Au that metal is leaked in the source of evaporating described in the step B, and the condition of described high-temperature quick thermal annealing is: annealing is 30 seconds in 750 ℃ to 800 ℃ nitrogen atmosphere.
The ion that carries out described in the step C injecting when ion injects is high energy He
+Ion;
The grid metal that evaporates described in the step D is Ni/Au, and the metal that evaporates described in the step F is Ni/Au, and the metal that evaporates described in the step H is Ni/Au, and the metal that evaporates described in the step I is Ti/Au.
The PECVD method is adopted in deposit described in the step e, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
The PECVD method is adopted in deposit described in the step G, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
This method further comprises: J, making air bridges and test analysis.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this AlGaN/GaN HEMT multilayer field plate device provided by the invention and preparation method thereof, because AlGaN/GaN HEMT device making technics based on routine, after forming the grid Metal Contact, make grid earlier and connect field plate, the making source connects field plate again, form AlGaN/GaN HEMT multilayer field plate device, thus the breakdown characteristics of AlGaN/GaN HEMT device improved greatly, and suppressed the current collapse phenomenon of AlGaN/GaN HEMT device effectively.
2, the AlGaN/GaN HEMT multilayer field plate device that utilizes the present invention to make, from the puncture voltage test as can be seen, the puncture voltage of this structure is big more than the puncture voltage that only adopts grid connection field plate or source connection field plate structure, this be because, the employing of two-layer field plate makes grid one electric field between leaking become the E type structure of three spikes by two spikes of one deck field plate, and peak value diminishes, just the maximum field value diminishes, so puncture voltage is improved.
3, the AlGaN/GaN HEMT multilayer field plate device that utilizes the present invention to make at the power output facet, has been eliminated the current collapse phenomenon substantially fully.And, what be different from conventional structure is, conventional structure HEMT device is depressed power twenties volts leakage and is just reached capacity, and presses and can add up even leak, and power output does not increase substantially, and adopt the HEMT device of two-layer field plate structure, when big voltage condition, press greater than 40 volts when leaking, along with the increase of leaking pressure, power output still increases, and proves that the HEMT structure of this structure has been given full play to the potentiality of AlGaN/GaN material system in power output.
Description of drawings
Fig. 1 is a method flow diagram of making conventional AlGaN/GaN HEMT device at present;
Fig. 2 is the structural representation of AlGaN/GaN HEMT multilayer field plate device provided by the invention;
Fig. 3 is the method flow diagram of making AlGaN/GaN HEMT multilayer field plate device provided by the invention;
Fig. 4 is the process chart of making AlGaN/GaN HEMT multilayer field plate device provided by the invention;
Fig. 5 is the breakdown characteristics schematic diagram of AlGaN/GaN HEMT multilayer field plate device provided by the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 2, Fig. 2 is the structural representation of AlGaN/GaN HEMT multilayer field plate device provided by the invention.This AlGaN/GaN HEMT multilayer field plate device comprises:
Grid is positioned at the source electrode and the drain electrode of grid both sides; Wherein,
Grid, source electrode and drain electrode are positioned on backing material top layer aluminum gallium nitride (AlGaN) epitaxial loayer, form ohmic contact by annealed alloy between source electrode and AlGaN epitaxial loayer and drain electrode and the AlGaN epitaxial loayer;
Formed the device surface deposit SiN deielectric-coating of grid, source electrode and drain electrode, the evaporation grid connect the figure of field plate on this layer dielectric; At the device surface that has formed deposit SiN deielectric-coating once more, evaporation source connects the figure of field plate on this layer dielectric subsequently.
Described backing material comprises Sapphire Substrate, gallium nitride (GaN) and AlGaN epitaxial loayer three-decker from the bottom to top successively; Wherein, Sapphire Substrate is used for the backing material as the growing GaN epitaxial loayer; The AlGaN/GaN epitaxial layer structure forms heterojunction between AlGaN epitaxial loayer and GaN epitaxial loayer, produces the two-dimensional electron gas of high concentration, and big current density and power output capacity is provided.
Based on AlGaN/GaN HEMT multilayer field plate device shown in Figure 2, Fig. 3 shows the method flow diagram of making AlGaN/GaN HEMT multilayer field plate device provided by the invention.This method, is made grid earlier and is connected field plate after forming the grid Metal Contact based on the GaN HEMT device making technics of routine, and the making source connects field plate again, forms AlGaN/GaN HEMT multilayer field plate structure.This method specifically may further comprise the steps:
Step 301: on backing material, carry out optical lithography, form alignment mark, evaporation mark metal;
In this step, described backing material is followed successively by AlGaN, GaN and sapphire from top to bottom, perhaps also can further comprise one deck AlN between AlGaN and GaN.
Step 302: after evaporating the mark metal, optics photolithographic source leakage graphic on the AlGaN epitaxial loayer, and evaporating drain and source metals (Ti/Al/Ti/Au), high-temperature quick thermal annealing then, between source leakage metal and backing material, form ohmic contact, form source electrode and drain electrode;
In this step, the condition of described high-temperature quick thermal annealing is: annealing is 30 seconds in 750 ℃ to 800 ℃ nitrogen atmosphere; The process chart corresponding with this step is shown in Fig. 4 (a).
Step 303: carry out ion and inject, active area is isolated;
In this step, use high energy He
+The ion pair isolated area is carried out the ion injection, and the process chart corresponding with this step is shown in Fig. 4 (b).
Step 304: the position optical lithography between source electrode on the backing material and drain electrode is made the grid line bar, and evaporation grid metal Ni/Au forms grid; The process chart corresponding with this step is shown in Fig. 4 (c).
Step 305: be manufactured with the substrate material surface deposit SiN deielectric-coating of source electrode, drain and gate;
In this step, the PECVD method is adopted in described deposit, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
The process chart corresponding with this step is shown in Fig. 4 (d).
Step 306: optical lithography grid field plate figure, evaporated metal Ni/Au;
Step 307: secondary deposit SiN deielectric-coating;
In this step, the PECVD method is adopted in described deposit, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
The process chart corresponding with this step is shown in Fig. 4 (f).
Step 308: optical lithography source field plate figure, evaporated metal Ni/Au; The process chart corresponding with this step is shown in Fig. 4 (g).
Step 309: optical lithography metal wiring pattern, evaporated metal Ti/Au.
Step 310: make air bridges;
Step 311: test analysis.In this step, as shown in Figure 5 to the breakdown characteristics schematic diagram of AlGaN/GaN HEMT multilayer field plate device provided by the invention.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. an aluminum-gallium-nitrogen/gallium nitride high electron mobility field-effect transistor multilayer field plate device is characterized in that this device comprises grid, is positioned at the source electrode and the drain electrode of grid both sides; Wherein,
Grid, source electrode and drain electrode are positioned on the backing material top layer aluminum gallium nitride AlGaN epitaxial loayer, form ohmic contact by annealed alloy between source electrode and AlGaN epitaxial loayer and drain electrode and the AlGaN epitaxial loayer;
Formed the device surface deposit silicon nitride SiN deielectric-coating of grid, source electrode and drain electrode, the evaporation grid connect the figure of field plate on this layer dielectric; At the device surface that has formed deposit SiN deielectric-coating once more, evaporation source connects the figure of field plate on this layer dielectric subsequently.
2. aluminum-gallium-nitrogen/gallium nitride high electron mobility field-effect transistor multilayer field plate device according to claim 1 is characterized in that, described backing material comprises Sapphire Substrate, gallium nitride GaN and AlGaN epitaxial loayer three-decker from the bottom to top successively;
Wherein, Sapphire Substrate is used for the backing material as the growing GaN epitaxial loayer; The AlGaN/GaN epitaxial layer structure forms heterojunction between AlGaN epitaxial loayer and GaN epitaxial loayer, produces the two-dimensional electron gas of high concentration, and big current density and power output capacity is provided.
3. method of making AlGaN/GaN HEMT multilayer field plate device, it is characterized in that, this method is based on the AlGaN/GaN HEMT device making technics of routine, after forming the grid Metal Contact, make grid earlier and connect field plate, the making source connects field plate again, forms AlGaN/GaN HEMT multilayer field plate device.
4. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 3 is characterized in that this method specifically comprises:
A, on backing material, carry out optical lithography, form alignment mark, evaporation mark metal;
B, after evaporating the mark metal, photolithographic source leakage graphic on the AlGaN epitaxial loayer, and evaporating drain and source metals, high-temperature quick thermal annealing is then leaked between metal and the backing material in the source and to be formed ohmic contact, forms source electrode and drain electrode;
C, carry out ion and inject, active area is isolated;
D, the position optical lithography between source electrode on the backing material and drain electrode are made the grid line bar, and evaporation grid metal forms grid;
E, be manufactured with the substrate material surface deposit SiN deielectric-coating of source electrode, drain and gate;
F, optical lithography grid field plate figure, evaporated metal;
G, secondary deposit SiN deielectric-coating;
H, optical lithography source field plate figure, evaporated metal;
I, optical lithography metal wiring pattern, evaporated metal.
5. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 4 is characterized in that described backing material is followed successively by AlGaN, GaN and sapphire from top to bottom.
6. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 5 is characterized in that described backing material further comprises one deck AlN between AlGaN and GaN.
7. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 4, it is characterized in that, it is Ti/Al/Ti/Au that metal is leaked in the source of evaporating described in the step B, and the condition of described high-temperature quick thermal annealing is: annealing is 30 seconds in 750 ℃ to 800 ℃ nitrogen atmosphere.
8. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 4 is characterized in that,
The ion that carries out described in the step C injecting when ion injects is high energy He
+Ion;
The grid metal that evaporates described in the step D is Ni/Au, and the metal that evaporates described in the step F is Ni/Au, and the metal that evaporates described in the step H is Ni/Au, and the metal that evaporates described in the step I is Ti/Au.
9. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 4 is characterized in that,
The PECVD method is adopted in deposit described in the step e, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
The PECVD method is adopted in deposit described in the step G, and the deposition dielectric film kind is Si
3N
4, the thickness of the deielectric-coating of deposit is
10. the method for making AlGaN/GaN HEMT multilayer field plate device according to claim 4 is characterized in that this method further comprises:
J, making air bridges and test analysis.
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