CN109346407A - The manufacturing method of gallium nitride HEMT - Google Patents
The manufacturing method of gallium nitride HEMT Download PDFInfo
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- CN109346407A CN109346407A CN201811108986.9A CN201811108986A CN109346407A CN 109346407 A CN109346407 A CN 109346407A CN 201811108986 A CN201811108986 A CN 201811108986A CN 109346407 A CN109346407 A CN 109346407A
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- gallium nitride
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- electron supply
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 46
- 239000000463 material Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910010271 silicon carbide Inorganic materials 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005533 two-dimensional electron gas Effects 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- DIMMBYOINZRKMD-UHFFFAOYSA-N vanadium(5+) Chemical group [V+5] DIMMBYOINZRKMD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Abstract
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of gallium nitride HEMT.A kind of manufacturing method of gallium nitride HEMT, wherein on gallium nitride base board, electronics mobile layer and electron supply layer AlXGa1‑XOn N (0 < x≤1) and the electron supply layer, source electrode, drain electrode, grid are set gradually in order, and are formed transversely arranged.As the compound semi-conductor device of feature.Remarkable result of the invention is: by the technique in the application present invention, electrode being arranged on AlXGa1-XN electron supply layer, is sequentially followed successively by source electrode, drain electrode, grid, and is transversely arranged.Available stable electric current-voltage characteristic.Meanwhile the pressure voltage of original part can be improved.The present invention further improves I-V characteristic while improving the ON pressure resistance of gaN series compound semi-conductor device.
Description
Technical field
The invention belongs to manufacturing methods, and in particular to a kind of manufacturing method of gallium nitride HEMT, the system of the gallium nitride HEMT
The stability of the high electron mobility transistor (HEMT) manufactured using nitride compound semiconductor can be improved in the method for making.
Background technique
In general, when we mention semiconductor, leave most deep image to people is mostly to manufacture through micro fabrication
Large scale integrated circuit (LSI), in order to allow LSI to realize function according to imagination, it is necessary to according to the certain voltage of required supply, electricity
Stream.It is, therefore, possible to provide the power supply of the voltage, electric current is essential.In order to realize " supplying electric power according to required form ", half
Conductor is wherein play important role.From control electric power (energy) this layer of meaning, central role is wherein being played
It is also just not at all surprising that semiconductor component is referred to as power semiconductor module or electric semiconductor.
In recent years, when being put into the market using the power semiconductor module that silicon carbide (SiC) material makes, and being considered as time
The power semiconductor module in generation and by expectation.In addition, gallium nitride (GaN) electrical power conversion transistor is again because of its higher speed
Switching speed, the electric power application scenarios having no precedent so far may be implemented.Related project is also in further discussion.
On the other hand, it is constantly progressive development with blue light diode (LED) and laser diode techniques, because good
Gallium nitride base board realizes sale in the market, although being to be formed on dissimilar substrate with the power semiconductor module gone to
Original part based on, but it is anticipated that GaN power semiconductor module will surmount silicon materials (Si), carbofrax material original part,
To realize the manufacture of large-capacity semiconductor module.
The application of power semiconductor module can be roughly divided into following three bulk: 1,30% use is (a towards PC
People's computer) and PC peripheral equipment in.2,15% use is in towards digital household appliances, vehicle electronic device.3,30% use exists
Towards life household electrical appliances, housework household electrical appliances and industry, the communications field.In the world of power semiconductor module, or even it may be said that have
How many how many kinds of power supply plant power semiconductor module with regard to.In order to complying with the market demand, various application circuits, easily are enriched
Package parts, composite component and realization of constant pressure and flow etc., it is necessary to lay in be related to multiple technology branches for we
Technical force.
Now, what is played a leading role in power semiconductor module field is Si material.Similarly, it is being leading role's building with Si
The world LSI in, when the size reduction of the transistor as basic original part is to 1/k, while being also required to voltage being contracted to 1/
K, complies with the low electrification requirement, and with the evolution of micro-processing technology, and high-speed switch and large-scale has been done step-by-step
It is integrated.
In power semiconductor module field, micrometer-nanometer processing technology is considered as long as having already fallen behind the several years, obtains better
The trigger voltage limit (pressure resistance) and to the improvement of mould electrical property increasingly it is necessary to.But it can be real by micrometer-nanometer processing technology
It is the low pressure-resistant field below 100V that the improvement of existing aspect of performance, which is limited in pressure-resistant range,.It and is more than 100V pressure resistance in demand
In the field of value, merely introducing micrometer-nanometer processing technology and cannot realizing to performance improves.This is because as semiconductor weight
It wants the low ON of characteristic to resist between grid electricity and pressure resistance, in general there is shifting relationship.
The means of this problem as solution, the promotion for realizing performance can be considered through change material in we, this
With regard to the electric semiconductor being fabricated using broad stopband (WideBandGap) material semiconductor as SiC and GaN that has been born
Module.The maximum of wide-band gap material is characterized in: breakdown field strength is high.Using this characteristic, even with original identical with Si
The raising of pressure voltage also may be implemented in part structure.
The difference of GaN material and Si and the original part of SiC material manufacture is embodied in basic " shape " of original part itself.It is brilliant
Three source, drain electrode and grid electrodes in body pipe, and Si and SiC power semiconductor module then uses referred to as " longitudinal type "
Construction.And " horizontal type " construction is used then to be desirable to will be present in the two-dimensional electron gas (2DEG) at the interface AlGaN/GaN as electricity
The access of stream uses.
In addition, gallium nitride is a kind of crystallization of included electric polarity (natural split pole), and in crystallization after application pressure, again
New electric polarity (askew split pole) can be generated, so being a kind of piezoelectric material again.In the research towards industrial application, adopt substantially
What is taken is all the structure of this horizontal type construction.
Although AlGaN and GaN there are natural polarity difference, because of the difference of lattice constant, when with AlGaN and
When GaN constructs isomers, in order to make lattice constant coincide, the distortion of crystallization will be generated, to generate askew split pole.Because this
The non-generation for deliberately making right distortion, the energy band of gallium nitride can be generated towards AlGa natural torsion downwards in the crooked position
2DEG.Because the 2DEG possesses very high mobility, so that the switching speed for allowing realization to be exceedingly fast is possibly realized.
What is formed on sapphire, GaAs (GaAs), SiC, Si substrate contains AlGaN layer/GaN layer HEMT.Citing
Illustrate, as recorded in Japanese patent application the 4663156th.In such situation, although HEMT can also play a role,
But because the difference of lattice constant and thermal expansion coefficient between GaN layer causes interface to generate distortion, in the pressure that distortion generates
Under effect, will lead to density is 1 × 109cm-2~1 × 1010cm-2Threading dislocation, lead to the increment of defect, be subsequently formed
AlGaN layer will inherit the state of the GaN layer as lower lining.It is easy to cause the generation of electric leakage in this way and reduces pressure, it is final bright
The aobvious performance for reducing finished product original part.
Summary of the invention
The present invention in view of the drawbacks of the prior art, provides a kind of manufacturing method of gallium nitride HEMT.
The present invention is implemented as follows: a kind of manufacturing method of gallium nitride HEMT, wherein on gallium nitride base board, electronics
Mobile layer and electron supply layer AlXGa1-XOn N (0 < x≤1) and the electron supply layer, source electrode, drain electrode, grid are set gradually in order
Pole, and form transversely arranged.As the compound semi-conductor device of feature.
A kind of manufacturing method of gallium nitride HEMT as described above, wherein in the electronics mobile layer, as miscellaneous
Matter, at least containing at least one atom selected from the group that C, Fe, Cr, V are formed.
A kind of manufacturing method of gallium nitride HEMT as described above, wherein in the electron supply layer, as impurity,
At least containing at least one atom selected from the group that O, Si are formed.
A kind of manufacturing method of gallium nitride HEMT as described above, wherein between the source electrode, drain electrode and grid
It is coated with one layer of silicon nitride film.
Remarkable result of the invention is: by the technique in the application present invention, being arranged on AlXGa1-XN electron supply layer
Electrode is sequentially followed successively by source electrode, drain electrode, grid, and is transversely arranged.Available stable electric current-voltage characteristic.Meanwhile
The pressure voltage of original part can be improved.The present invention further improves while improving the ON pressure resistance of gaN series compound semi-conductor device
I-V characteristic.
Detailed description of the invention
Fig. 1 is the schematic diagram that the principle in the present invention is constituted.
Fig. 2 is the sectional view of the HEMT of an example as the bright implementation form of this law.
Fig. 3 is I-V characteristic of the HEMT of an example as the bright implementation form of this law.
In figure: 1. substrates, 2. electronics mobile layers, 3. electron supply layers, 4. insulating films, 5. source electrodes, 6. drain electrodes, 7. grids,
11.GaN substrate, 12.i type GaN electronics mobile layer, 13.n type Al0.25Ga0.75N electron supply layer, 14.SiN film, 15. by
Ti/Au constitute source electrode, 16. be made of Ti/Au drain electrode, 17. grid, 18. two-dimensional electron gas being made of Ni/Au
(2DEG)。
Specific embodiment
The principle that Fig. 1 illustrates the invention is constituted.Illustrate to adopt to solve the project in the present invention referring to Fig. 1
The means taken.
In the present invention, first prepare one piece of GaN substrate 1, GaN electronics mobile layer 2 is constructed in the GaN substrate 1, in the electricity
AlxGa1-xN (0 < x≤1) electron supply layer 3 is constructed on sub- mobile layer 2, and source electrode 5, drain electrode 6 are configured on the electron supply layer 3
And grid 7.The above are the features of the invention.
So, three electrodes on electron supply layer 3 are configured in order according to the sequence of source electrode 5, drain electrode 6, grid 7,
Piezoelectric charge raises energy band, and tunnel current is decreased to realize the promotion of Schottky characteristic.The hole that interface nearby generates is mutual
It offsets, and because the influence of surface trap caused by aluminium (Al) can be excluded, so as to obtain stable I-V characteristic.
Especially by setting SiN film 4, the hole induced near interface can further be driven to inside, thus may be used
To prevent the generation of hysteresis, and the phase boundary potential raised by piezoelectric charge can be dragged down simultaneously.So, take
Rice energy level is opposite to be elevated, to increase the density of electric current.
Referring to shown in Fig. 2, the illustratively gaN series HEMT in first embodiment of the invention.It is being with the face Ga
In the GaN substrate 11 of interarea, using common HVPE method, such as one is manufactured with a thickness of 3 μm of i type GaN electronics mobile layer
12.Successively ulking thickness is 25nm on the layer, and Si doping concentration is 2 × 1018cm-3N-shaped Al0.25Ga0.75The supply of N electronics
Layer 13.Then, the SiN film 14 for being 20nm in whole surface ulking thickness with CVD method.At the position of building grid, opening is set
Portion constructs the grid 17 being made of Ni/Au in opening portion.Opening portion is set for source electrode and drain electrode simultaneously.Opening portion building by
The source electrode 15 of Ti/Au composition and drain electrode 16.After the completion of manufacture constructed above, just complete in 13 He of AlGaN electron supply layer
2DEG is formed on 12 interface 18 of GaN electronics mobile layer, and using the 2DEG as the essential structure of the gaN series HEMT of current path.
It, can also be from by iron (Fe), chromium (Cr), vanadium (V) group although i type GaN electronics mobile layer 12 is doped with carbon (C)
At group in selection include at least one of element and be doped.In addition, N-shaped Al0.25Ga0.75Although N electron supply layer 13 selects
It is doped with Si, but oxygen (O) can also be selected to adulterate.
Fig. 2 shows the schematic diagram of a monomer HEMT, but when carry out integrated, can by injection ion or
The separation of original part is realized using mesa etching.Fig. 3 is that electric current-voltage of GaN-HEMT in the present invention is special
Property.It can be seen that it is with excellent power transistor characteristic.
Specific implementation form of the invention is illustrated above.But implementation form of the invention is not limited to above
The composition and condition of description.There can be a variety of different variations.Such as electron supply layer mentioned above is by Al0.25Ga0.75N
What layer was constituted, wherein the suffix x of Al is not limited to 0.25, as long as value range between 0.10~0.40, can be expired
The effect of meaning.
In addition, in the implementation form, electron supply layer is to be made of N-shaped AlGaN layer, but might not have to use
Si doped layer.Because of the operation principles of gaN series HEMT are as follows: split pole is caused by crystal structure, piezoelectric charge is generated by split pole, the pressure
Charge induces two-dimensional electron gas, so also can choose using undoped layer.
In above-mentioned embodiment, in addition, electronics mobile layer is made of AlGaN layer, and protective layer is constituted by GaN layers.
But it might not have to use this constructive method.Can choose at least one party in electronics fluidized bed, electron supply layer or
Both sides add In.Such as when in electronics mobile layer add In after obtain InGa when, the movement speed of electronics can be improved.And
It is added in protective layer after In when obtaining InGa, then can reduce forbidden bandwidth (Bandgap), at this time compared with using GaN layer, electricity
The phase boundary potential of sub- supplying layer and electronics mobile layer can be further pulled low.
In above-mentioned embodiment, in addition, n-channel type HEMT is illustrated.Certainly, the program can equally be well applied to
P-channel type HEMT.When manufacturing p-channel type HEMT, the title of each layer is then changed to the hole GaN mobile layer, AlXGa1-XN(0<x
≤ 1) hole supplying layer, conduction type turned.
Claims (4)
1. a kind of manufacturing method of gallium nitride HEMT, it is characterised in that: on gallium nitride base board, electronics mobile layer and electronics supply
Layer AlXGa1-XOn N (0 < x≤1) and the electron supply layer, source electrode, drain electrode, grid are set gradually in order, and form lateral row
Column, as the compound semi-conductor device of feature.
2. a kind of manufacturing method of gallium nitride HEMT as described in claim 1, it is characterised in that: in the electronics mobile layer
In, as impurity, at least containing at least one atom selected from the group that C, Fe, Cr, V are formed.
3. a kind of manufacturing method of gallium nitride HEMT as claimed in claim 2, it is characterised in that: supplied in the electronics
Layer, as impurity, at least containing at least one atom selected from the group that O, Si are formed.
4. a kind of manufacturing method of gallium nitride HEMT as claimed in claim 3, it is characterised in that: in the source electrode, drain electrode
And one layer of silicon nitride film is coated between grid.
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