CN101221999A - Solar battery diffusion technology and equipment thereof - Google Patents
Solar battery diffusion technology and equipment thereof Download PDFInfo
- Publication number
- CN101221999A CN101221999A CNA2008100188458A CN200810018845A CN101221999A CN 101221999 A CN101221999 A CN 101221999A CN A2008100188458 A CNA2008100188458 A CN A2008100188458A CN 200810018845 A CN200810018845 A CN 200810018845A CN 101221999 A CN101221999 A CN 101221999A
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- CN
- China
- Prior art keywords
- air draft
- draft pressure
- solar battery
- bleeding
- discharge pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 28
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 9
- 239000011574 phosphorus Substances 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 230000000740 bleeding effect Effects 0.000 claims description 18
- 238000002513 implantation Methods 0.000 claims description 5
- 239000002912 waste gas Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
Abstract
The invention relates to the solar energy processing technical field, in particular to a solar battery diffusion process and the equipment thereof. The invention ensures that a parameter-air exhaust and discharge pressure is kept steady by controlling the air exhaust and discharge pressure in the solar battery diffusion process, the stability of the air exhaust and discharge pressure leads to the stability of injection concentration of the phosphorus in a silicon wafer and ensures that a square battery of the silicon wafer obtained after the processing is kept steady, and the high-efficient solar battery can be matched during the sintering in the next step. The air exhaust and discharge pressure is controlled through an air discharge control valve and an air discharge pressure controller arranged on the air discharge end of the machine. The square resistance can also be steady after the stability of the air exhaust and discharge pressure and the following stability of injection concentration of the phosphorus in the silicon wafer, thereby improving the final efficiency of the solar battery by 5 percent.
Description
Technical field
The present invention relates to a kind of solar cell processing technique field, particularly a kind of solar battery diffusion technology and equipment thereof.
Background technology
Silicon chip needs to form the P-N utmost point through diffusion technology in being made into the process of solar cell, through the silicon chip after the solar battery diffusion technology processing a very important parameters is arranged, this parameter is exactly a square resistance, and each specific square resistance all has the temperature curve an of the best to match to make it the battery efficiency that reaches maximum in the road sintering circuit of back.The solar battery efficiency that the fluctuation of square resistance will cause producing descends about 5%.
Summary of the invention
For the square resistance that overcomes the silicon chip that existing equipment produces can produce the defective of fluctuation, the invention provides a kind of by providing the stable air draft pressure of bleeding to come the solar cell diffusion facilities of the square resistance of the silicon chip that steady production comes out.
The technical solution adopted in the present invention is: a kind of solar battery diffusion technology, in solar battery diffusion technology by the control air draft pressure of bleeding, make this parameter of air draft pressure of bleeding keep stable, air draft pressure stable of bleeding causes the implantation concentration of phosphorus in silicon chip stable, make the square battery of the silicon chip that obtains after the processing keep stable, in the sintering in road, back, can match solar cell efficiently.The air draft pressure of bleeding is controlled by the air draft pressure-control valve and the air draft pressure controller that install additional at the board air outlet.
A kind of solar cell diffusion facilities comprises diffusion furnace and board air outlet, and the waste gas that produces in the diffusion furnace is discharged from the board air outlet by pipeline, and the board air outlet is installed air draft pressure-control valve and corresponding air draft pressure controller.
Entering the gas of diffusion furnace and chemicals by gas flow-control, is stable therefore.But air draft is directly actuated by factory's affair, and the air draft pressure of bleeding is exactly the pressure of factory's affair air draft, because factory's affair air draft connects a plurality of boards, so air draft pressure is not stable.The pressure range of general control is 1.5-5mbar.Found through experiments the air draft pressure of bleeding the square battery of silicon chip is had considerable influence equally.
| ?PES(mbar) | 1.5 | ?2 | ?2.5 | ?4 | ?5 |
| ?SR(ohm) | 54 | ?53 | ?51 | ?50 | ?49.5 |
Here SR is a square resistance, and PES is the suction pressure air draft.
The air draft pressure oscillation causes the concentration of the injection of phosphorus in silicon chip to change owing to bleed, because square resistance is relevant with the doping concentration of phosphorus.Square resistance will be in the interval of 49.5-54ohm respective change.
The invention has the beneficial effects as follows: after the air draft pressure stability of bleeding, after the implantation concentration of phosphorus in silicon chip was stable, square resistance was also stable thereupon, can promote the efficient 5% of final solar cell.
Description of drawings
The present invention is further described below in conjunction with drawings and Examples.
Fig. 1 is a structural representation of the present invention.
Among the figure: 1. diffusion furnace, 2. board air outlet, 3. air draft pressure-control valve, 4. the air draft pressure controller 5. expands pipe, 6. concentrates bottle.
Embodiment
A kind of solar battery diffusion technology, in solar battery diffusion technology by the control air draft pressure of bleeding, make this parameter of air draft pressure of bleeding keep stable, air draft pressure stable of bleeding causes the implantation concentration of phosphorus in silicon chip stable, it is stable that the square battery of the silicon chip that arrives that makes keeps, and can match solar cell efficiently in road, back sintering.The air draft pressure of bleeding is controlled by the air draft pressure-control valve 3 and the air draft pressure controller 4 that install additional at board air outlet 2.
A kind of solar cell diffusion facilities as shown in Figure 1, comprise diffusion furnace 1 and board air outlet 2, the gas of getting rid of from diffusion furnace 1 is got rid of from board air outlet 2 through expanding pipe 5 (expansion essel) and concentrating bottle 6 (congdensation bottle) back, board air outlet 2 is installed air draft pressure-control valve 3 and corresponding air draft pressure controller 4, makes this parameter of air draft pressure of bleeding keep stable by air draft pressure controller 4 control air draft pressure-control valves 3.The gas that enters diffusion furnace 1 is by gas flow-control, stability of flow.Gas and POCL3 react with silicon in diffusion furnace 1, and after the air draft of bleeding was pressed and stablized, the implantation concentration of phosphorus in silicon chip also can be stablized, and square resistance is also stable thereupon, can promote the efficient 5% of solar cell.
Claims (3)
1. solar battery diffusion technology, it is characterized in that: in solar battery diffusion technology by the control air draft pressure of bleeding, make this parameter of air draft pressure of bleeding keep stable, air draft pressure stable of bleeding causes the implantation concentration of phosphorus in silicon chip stable, make the square battery of the silicon chip that obtains after the processing keep stable, in road, back sintering, match solar cell efficiently.
2. solar battery diffusion technology according to claim 1 is characterized in that: the described air draft pressure of bleeding is controlled by the air draft pressure-control valve (3) and the air draft pressure controller (4) that install additional at board air outlet (2).
3. solar cell diffusion facilities, comprise diffusion furnace (1) and board air outlet (2), the waste gas that produces in the diffusion furnace (1) is discharged from board air outlet (2) by pipeline, it is characterized in that: described board air outlet (2) is installed air draft pressure-control valve (3) and corresponding air draft pressure controller (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100188458A CN101221999B (en) | 2008-01-28 | 2008-01-28 | Solar battery diffusion technology and equipment thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008100188458A CN101221999B (en) | 2008-01-28 | 2008-01-28 | Solar battery diffusion technology and equipment thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101221999A true CN101221999A (en) | 2008-07-16 |
| CN101221999B CN101221999B (en) | 2010-12-08 |
Family
ID=39631693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008100188458A Expired - Fee Related CN101221999B (en) | 2008-01-28 | 2008-01-28 | Solar battery diffusion technology and equipment thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101221999B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569507A (en) * | 2011-12-30 | 2012-07-11 | 绥中滨海经济区乐威科技发展有限公司 | Photovoltaic glass synthesizer |
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
| CN104404625A (en) * | 2014-11-18 | 2015-03-11 | 中国电子科技集团公司第四十八研究所 | Tail gas treating device for reduced-pressure diffusion system |
| CN110538620A (en) * | 2018-11-14 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Pressure control system and pressure control method of reaction chamber |
| CN111041560A (en) * | 2019-12-13 | 2020-04-21 | 阳光中科（福建）能源股份有限公司 | Improved phosphorus diffusion furnace and method for removing phosphorus oxychloride by using same |
-
2008
- 2008-01-28 CN CN2008100188458A patent/CN101221999B/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569507A (en) * | 2011-12-30 | 2012-07-11 | 绥中滨海经济区乐威科技发展有限公司 | Photovoltaic glass synthesizer |
| CN102569507B (en) * | 2011-12-30 | 2015-04-15 | 辽宁乐威科技发展有限公司 | Processing method of photovoltaic glass synthesizer |
| CN103409803A (en) * | 2013-08-22 | 2013-11-27 | 天威新能源控股有限公司 | Flow homogenizing plate used for crystalline silicon diffusion and crystalline silicon diffusion technology furnace comprising same |
| CN103409803B (en) * | 2013-08-22 | 2016-12-28 | 天威新能源控股有限公司 | Even flow plate and crystalline silicon diffusion technique stove thereof for crystalline silicon diffusion |
| CN104404625A (en) * | 2014-11-18 | 2015-03-11 | 中国电子科技集团公司第四十八研究所 | Tail gas treating device for reduced-pressure diffusion system |
| CN104404625B (en) * | 2014-11-18 | 2017-03-29 | 中国电子科技集团公司第四十八研究所 | A kind of exhaust gas processing device for the diffusion system that reduces pressure |
| CN110538620A (en) * | 2018-11-14 | 2019-12-06 | 北京北方华创微电子装备有限公司 | Pressure control system and pressure control method of reaction chamber |
| CN111041560A (en) * | 2019-12-13 | 2020-04-21 | 阳光中科（福建）能源股份有限公司 | Improved phosphorus diffusion furnace and method for removing phosphorus oxychloride by using same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101221999B (en) | 2010-12-08 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101208 Termination date: 20190128 |